Abstract: The present application provides an optical module comprising: a golden finger, a MAC chip, a switch circuit, a laser driver, and a laser. A first output terminal of the MAC chip is connected to a first input terminal of the laser driver for inputting burst controlling signal thereto; a second output terminal of the MAC chip is connected to a first input terminal of the switch circuit for inputting cut-off controlling signal thereto; a cut-off controlling pin of the golden finger is connected to a second input terminal of the switch circuit for inputting cut-off controlling signal thereto; and an output terminal of the switch circuit is connected to a second input terminal of the laser driver. The switch circuit is used to connect the first or the second input terminal of the switch circuit with the output terminal. The cut-off controlling signal controls the switch-off of the laser.

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: A laser component includes a housing in which a first carrier block is arranged. A first laser chip having an emission direction is arranged on a longitudinal side of the first carrier block. The first laser chip electrically conductively connects to a first contact region arranged on the first carrier block and a second contact region arranged on the first carrier block. There is a respective electrically conductive connection between the first contact region and a first contact pin of the housing and between the second contact region and a second contact pin of the housing.

Abstract: This image display apparatus includes a plurality of laser beam source portions outputting laser beams of a plurality of color components different from each other, a synthesized beam generation portion synthesizing the laser beams of the plurality of color components, a control portion controlling the outputs of the laser beam source portions, and a driving current correction portion estimating a variation in the threshold current of each of the laser beam source portions and correcting a driving current on the basis of the estimated variation in the threshold current.

Abstract: The laser cavity is of the unstable type and is provided with a passive Q-switch, the passive Q-switch comprising a saturable absorber that has an absorption gradient, so that the absorption profile of the saturable absorber is inhomogeneous over the cross section of the beam travelling in the laser cavity.

Abstract: In an embodiment, a process of forming an electronic device can include providing a semiconductor substrate having a first major side and an electronic component at least partly within the semiconductor substrate along the first major side; The process can further include thinning the semiconductor substrate to define a second major surface along a second major side opposite the first major side; and selectively removing a portion of the semiconductor substrate along the second major side to define a trench having a distal surface. The process can further include forming a feature adjacent to or within the trench. The feature can include a doped region, a conductive structure, or the like. In another embodiment, an electronic device can include the semiconductor substrate and a conductive structure within a trench. The conductive layer can laterally surround a pillar within the trench.

Abstract: Examples of robust self-starting passively mode locked fiber oscillators are described. In certain implementations, the oscillators are configured as Fabry-Perot cavities containing an optical loop mirror on one cavity end and a bulk mirror or saturable absorber on the other end. The loop mirror can be further configured with an adjustable line phase delay to optimize modelocking. All intra-cavity fiber(s) can be polarization maintaining. Dispersion compensation components such as, e.g., dispersion compensation fibers, bulk diffraction gratings or fiber Bragg gratings may be included. The oscillators may include a bandpass filter to obtain high pulse energies when operating in the similariton regime. The oscillator output can be amplified and used whenever high power short pulses are required. For example the oscillators can be configured as frequency comb sources or supercontinuum sources. In conjunction with repetition rate modulation, applications include dual scanning delay lines and trace gas detection.

Abstract: A method for production of an optoelectronic device includes fabricating a plurality of vertical emitters on a semiconductor substrate. Respective top surfaces of the emitters are bonded to a heat sink, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters. Both anode and cathode contacts are attached to the bottom surfaces so as to drive the emitters to emit light from the bottom surfaces. In another embodiment, the upper surface of a semiconductor substrate is bonded to a carrier substrate having through-holes that are aligned with respective top surfaces of the emitters, after which the semiconductor substrate is removed below respective bottom surfaces of the emitters, and the respective bottom surfaces of the emitters are bonded to a heat sink.

Abstract: An electronic package is provided, including: a circuit structure having opposite first and second surfaces, wherein first and second circuit layers are formed on the first and second surfaces of the circuit structure, respectively, the first circuit layer having a minimum trace width less than that of the second circuit layer; a separation layer formed on the first surface of the circuit structure; a metal layer formed on the separation layer and electrically connected to the first circuit layer; an electronic element disposed on the first surface of the circuit structure and electrically connected to the metal layer; and an encapsulant formed on the circuit structure to encapsulate the electronic element. By disposing the electronic element having high I/O function on the circuit structure, the invention eliminates the need of a packaging substrate having a core layer and thus reduces the thickness of the electronic package.

Abstract: A method and device for emitting electromagnetic radiation at high power using nonpolar or semipolar gallium containing substrates such as GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, is provided. In various embodiments, the laser device includes plural laser emitters emitting green or blue laser light, integrated a substrate.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A control apparatus for a laser oscillator includes an abnormality determining unit which determines an abnormality of a first assembly based on a first deviation between a first laser beam output command and a first laser beam output and which determines an abnormality of a second assembly based on a second deviation between a second laser beam output command and a second laser beam output, a command unit for issuing a predetermined current command to at least one of a first power unit and a second power unit when the abnormality determining unit determines that at least one of the first assembly and the second assembly has an abnormality, and an abnormality determination stopping unit for stopping the abnormality determining unit from determining an abnormality when the predetermined current command is issued.

Abstract: Generally, this disclosure provides systems, devices and methods for improved electrical coupling of multiple ground planes of a device. The device may include a plurality of ground planes and an electrically conductive ground clip. The ground clip may include a base portion configured to secure the ground clip to the device and a plurality of spring fingers. Each of the spring fingers may be configured to contact and electrically couple to one of the plurality of ground planes, wherein the ground clip is to provide a conduction path between each of the spring fingers. One of the spring fingers may pass through an opening or cut-through in a first ground plane to contact a second ground plane. The device may be a mobile communication or computing platform.

Abstract: A damping circuit having an input terminal and an output terminal is described. The damping circuit comprises a driver having an input and an output; an RC circuit coupled between the input terminal and the output; and a resistor coupled between the output and the output terminal, wherein the RC circuit delays passing a signal from the output terminal to the input terminal and a low impedance associated with the driver generally reduces ringing.

Abstract: A semiconductor light-emitting element includes a multilayer body including a first end surface and a second end surface which are opposed to each other, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are stacked; a pair of recesses that are formed on the second semiconductor layer, separated from the second end surface, and separated from each other in the direction parallel to the first and second end surfaces; a ridge portion that is a protrusion between the pair of recesses and extends along the direction perpendicular to the first and second end surfaces; a band-shaped electrode disposed on the ridge portion; and a light guide layer formed on the second semiconductor layer between the ridge portion and the second end surface and guides light from the light emitting layer.

Abstract: A semiconductor laser device comprises a base, a first conductive layer, a second conductive layer, a third conductive layer, and a semiconductor laser chip in this order, each of which has a respective emitting-side end portion. The emitting-side end portion of the first conductive layer is in a common plane with the emitting-side end portion of the base. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. The emitting-side end portion of the second conductive layer is disposed inward of the emitting-end portion of the first conductive layer. The emitting-side end portion of the third conductive layer is in a common plane with the emitting-side end portion of the second conductive layer. The emitting-side end portion of the semiconductor laser chip is disposed outward of the emitting-side end portion of the third conductive layer.

Abstract: A method and system for delivering laser pulses achieves the delivery of high quality laser pulses at the location of an application. The method includes the steps of: generating laser pulses, amplifying the laser pulses, temporally stretching the amplified laser pulses, and propagating the amplified laser pulses through an optical delivery fiber of desired length, wherein the laser pulses are temporally compressed in the optical delivery fiber and wherein the laser pulses undergo nonlinear spectral broadening in the optical delivery fiber.

Abstract: Variable repetition rate and wavelength optical pulse source, comprising a fixed or variable repetition rate source of supercontinuum pulses; a wavelength tunable optical bandpass filter to filter the supercontinuum pulses at two or more wavelengths, wherein said source of supercontinuum pulses and said wavelength tunable optical bandpass filter are configured such that the optical pulse source can provide variable repetition rate and variable wavelength optical pulses including a series of repetition rates with selected wavelength-varying pulse trains.

Abstract: A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.

Abstract: A method for processing a wafer having a device region and a peripheral surplus region surrounding the device region on a front surface thereof. The method includes: preparing a support plate including a base plate in which a recess is formed in a front surface region corresponding to the device region and an annular groove is formed in a region corresponding to the peripheral surplus region and a soft member is packed in the recess of the base plate; injecting an adhesive into the annular groove of the support plate; sticking the wafer onto the support plate with the adhesive such that the device region abuts against the soft member; holding the wafer with intermediary of the support plate and performing processing on the wafer; and making a cutting blade cut into a region corresponding to the annular groove of the support plate to remove the adhesive.