Abstract: A safety shutdown apparatus with self-driven control is coupled to a power-supplying path between a power supply apparatus and a load. The safety shutdown apparatus includes a detection unit, a controllable switch, and a drive circuit. The detection unit is coupled to the power-supplying path, and the controllable switch is coupled between a positive node and a negative node of the power-supplying path. The drive circuit is coupled to the detection unit, the power-supplying path, and the controllable switch. The drive circuit receives an output voltage of the power supply apparatus to turn on the controllable switch, and turn off the controllable switch according to whether the detection unit detects a current flowing through the power-supplying path.

Abstract: Techniques are described that enable automatic emergency braking (AEB) for a path-crossing target when a collision between a host vehicle and the target that is deemed imminent. Based on whether an acceleration of the host vehicle is above a threshold. Based on the acceleration, and, optionally, a location of the target relative to a crossing path (e.g., whether a portion of the target is within a suppression zone), an AEB system of the host vehicle is either activated or not activated, for example, suppressed. This suppression of the AEB system may include gating or nulling an AEB activation signal to prevent an emergency braking event. By managing the AEB system in a path-crossing scenario, many common false-positive AEB events (warnings, alerts, and/or braking) may be avoided. Furthermore, intentional vehicle maneuvers that comply with normal driving etiquette or rules can still be allowed for operator and passenger comfort, without risking safety.

Abstract: An estimation method suitable for a receiver and includes the following steps: calculating a relative signal-to-noise ratio, and determining whether the relative signal-to-noise ratio is higher than, lower than or within a threshold range; in response to determining that the relative signal-to-noise ratio is higher than the threshold range, estimating the signal quality indicator as a first preset value, wherein the first preset value represents a best signal quality; in response to determining that the relative signal-to-noise ratio is higher than the threshold range, estimating the signal quality indicator as a first preset value, wherein the first preset value represents a best signal quality; in response to determining that the relative signal-to-noise ratio is within the threshold range, estimating the signal quality indicator as an output value of a function according to a bit error rate, wherein an input value of the function is the relative signal-to-noise ratio.

Abstract: A MOS capacitor includes a substrate having a capacitor forming region thereon, an ion well having a first conductivity type in the substrate, a counter doping region having a second conductivity type in the ion well within the capacitor forming region, a capacitor dielectric layer on the ion well within the capacitor forming region, a gate electrode on the capacitor dielectric layer, a source doping region having the second conductivity type on a first side of the gate electrode within the capacitor forming region, and a drain doping region having the second conductivity type on a second side of the gate electrode within the capacitor forming region.

Abstract: A method of implementing autonomous emergency braking (AEB) for advanced driver-assistance systems (ADAS), the method includes receiving one or more first inputs and identifying one or more targets external to a host vehicle based on the one or more first inputs. The method further includes receiving one or more second inputs related to a turning status of the host vehicle and detecting a U-turn state associated with the host vehicle based on the one or more second inputs. The AEB algorithm may be modified in response to the detected U-turn state, wherein the AEB algorithm initiates an AEB event as necessary to avoid collisions with the one or more identified targets.

Abstract: A corneal storage composition is disclosed. The composition comprises a buffered, balanced, nutrient and electrolyte aqueous solution; ?-PGA; and ferulic acid, in amounts effective to maintain cell integrity and viability of the corneal tissue for a period of greater than 14 days.

Abstract: A shift register and a gate driver circuit are provided. The shift register includes an input unit, an output unit, an electrostatic discharge unit and a reset unit. The input unit provides an input signal. The output unit is coupled to the input unit and a gate output terminal. The output unit outputs an output signal through the gate output terminal according to the input signal. The electrostatic discharge unit is coupled to the output unit. After the gate output terminal outputs the output signal, the electrostatic discharge unit pulls down a voltage of the gate output terminal according to a low gate voltage. The reset unit is coupled to the input unit and the output unit. After the electrostatic discharge unit pulls down the voltage of the gate output terminal, the reset unit resets a voltage of a bootstrap node.

Abstract: A laser soldering system using dynamic light spot and a method thereof are provided. A laser module is controlled to radiate toward multi-lens to form a light spot on a soldering target for soldering, and a lens distance between the multi-lens is adjusted to adjust a light spot size. The disclosure may provide multiple heating densities respectively adequate to different soldering status via adjusting the light spot size when using same laser power, so as to improve the soldering quality.

Abstract: An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg1), a second energy bandgap (Eg2), and a third energy bandgap (Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer.

Abstract: A camera module includes an imaging lens assembly module and an image sensor. The image sensor is disposed on an image surface of the imaging lens assembly module and includes a photoelectric converting layer, a micro lens arrays layer, a light filtering layer and an anti-reflecting layer. The photoelectric converting layer is for converting a light signal to an electric signal. The micro lens arrays layer is for converging an energy of the imaging light into the photoelectric converting layer. The light filtering layer is for absorbing a light at a certain wavelength region of the imaging light. The anti-reflecting layer is disposed on a surface of at least one of the light filtering layer and the micro lens arrays layer and includes an irregular nano-crystallite structure layer and an optical connecting layer. The optical connecting layer is connected to the irregular nano-crystallite structure layer.

Abstract: A camera module includes an imaging lens assembly, an image sensor and an optical plate. The image sensor is disposed on an image surface of the imaging lens assembly. The optical plate is disposed between the imaging lens assembly and the image sensor, and includes a substrate and at least one anti-reflection layer. The substrate has an object-side surface and an image-side surface, the object-side surface faces towards an object side, the image-side surface faces towards an image side, and the object-side surface is parallel with the image-side surface. The at least one anti-reflection layer is disposed on the object-side surface or the image-side surface of the substrate, the anti-reflection layer includes a nanocrystal structure layer and an optical-connecting layer, wherein the nanocrystal structure layer includes a metal oxide crystal, the optical-connecting layer connects the substrate and the nanocrystal structure layer.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer and a titanium aluminide layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and a thickness of the titanium aluminide layer ranges from twice a thickness of the titanium nitride barrier layer to three times the thickness of the titanium nitride barrier layer.

Abstract: A semiconductor fabrication facility is provided. The semiconductor fabrication facility includes a processing tool and a transmission assembly. The transmission assembly is connected to the processing tool and comprises a number of transmission lines used to supply electric power or a fluid to the processing tool or remove the fluid or an exhaust gas from the processing tool. The transmission lines includes a first transmission line and a second transmission line. The first transmission line has a first temperature and the second transmission line has a second temperature. The second temperature is higher than the first temperature. The first transmission line and the second transmission line are arranged such that a thermal energy of the second transmission line is able to be transmitted to the first transmission line to change the first temperature of the first transmission line.

Abstract: The present disclosure provides a transformer module and a power module, wherein the transformer module comprises: a magnetic core, where a first insulating layer and a second wiring layer are sequentially disposed on the magnetic core from inside to outside; a first metal winding, wound around the magnetic core in a foil structure, and comprising a first winding segment formed in the first wiring layer and a second winding segment formed in the second wiring layer; and a second metal winding, wound around the magnetic core in a foil structure, comprising a third winding segment formed in the first wiring layer and a fourth winding segment formed in the second wiring.

Abstract: According to the present disclosure, an optical lens assembly includes at least two optical lens elements and at least one reflective element. The reflective element is made of a plastic material, the reflective element includes a reflective coating membrane, and the reflective coating membrane is disposed on a surface of the reflective element. The reflective coating membrane includes at least three coating layers of different materials, the at least three coating layers are respectively made of a first material, a second material and a third material, the first material mainly includes silver, the second material mainly includes titanium, the third material mainly includes chromium oxides, and the coating layer made of the first material and the coating layer made of the second material are disposed between the coating layer made of the third material and the reflective element.

Abstract: A plastic light-folding element includes an incident surface, an exit surface, a reflective surface and a reflective optical layer. The incident surface and the exit surface are configured to lead an imaging light enter and exit the plastic light-folding element, respectively. The reflective surface is configured to fold the imaging light. The reflective optical layer is disposed on the reflective surface, and includes an Ag layer, a bottom layer optical film and a top layer optical film. The bottom layer optical film is contacted with the Ag layer, and the bottom layer optical film is closer to the reflective surface than the Ag layer to the reflective surface. A refractive index of the top layer optical film is lower than a refractive index of the bottom layer optical film, and the top layer optical film is not contacted with the Ag layer.

Abstract: A common mode choke is provided, including a hollow ferrite core, a plurality of coils wound around the ferrite core, and a substrate. Each of the coils has a first end and a second end. The substrate is disposed on the side of the ferrite core and has a plurality of through holes. The first and second ends of the coils are engaged in the through holes. When viewed along the central axis of the ferrite core, the first and second ends of the coils are located on the outer side the ferrite core.

Abstract: The present application is suitable for use in the technical field of computers, and provides a smart diagnosis assistance method and terminal based on medical images, comprising: acquiring a medical image to be classified; pre-processing the medical image to be classified to obtain a pre-processed image; and inputting the pre-processed image into a trained classification model for classification processing to obtain a classification type corresponding to the pre-processed image, the classification model comprising tensorized network layers and a second-order pooling module. As the trained classification model comprises tensor decomposed network layers and a second-order pooling module, when processing images on the basis of the classification model, more discriminative features related to pathologies can be extracted, increasing the accuracy of medical image classification.