Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to waveguide structures with metamaterial structures and methods of manufacture. The structure includes: at least one waveguide structure; and metamaterial structures separated from the at least one waveguide structure by an insulator material, the metamaterial structures being structured to decouple the at least one waveguide structure to simultaneously reduce insertion loss and crosstalk of the at least one waveguide structure.

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

Abstract: Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

Abstract: The present disclosure relates to a structure including a non-fixed read-cell circuit configured to switch from a first state to a second state based on a state of a memory cell to generate a sensing margin.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

Abstract: One illustrative device disclosed herein includes a lower waveguide structure and an upper body structure positioned above at least a portion of the lower waveguide structure. In this example, the device also includes a grating structure positioned in the upper body structure, wherein the grating structure comprises a plurality of grating elements that comprise a tunable material whose index of refraction may be changed by application of energy to the tunable material.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to optical neuro-mimetic devices and methods of manufacture. The structure includes: a plurality of photodetectors and electrical circuitry that converts photocurrent generated from the photodetectors into electrical current and then sums up the electrical current to mimic neural functionality.

Abstract: Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

Abstract: The present disclosure generally relates to structures for use in optoelectronic/photonic applications and integrated circuit (IC) chips. The present disclosure also relates to semiconductor devices having a photodetector coupled with a waveguide, more particularly, a photodetector with a butt-end coupled waveguide. The present disclosure provides a structure having a substrate, a photodetector arranged above the substrate, the photodetector having a core body and a coupler that is adjacent to the core body, in which the core body is configured to absorb light received by the coupler, and the coupler including a plurality of grating structures having respective widths that vary as a function of position relative to the core body.

Abstract: Disclosed are embodiments of an integrated circuit structure (e.g., a processing chip), which includes an array of integrated pixel and memory cells configured for deep in-sensor, in-memory computing (e.g., of neural networks). Each cell incorporates a memory structure (e.g., DRAM structure or a ROM structure) with a storage node, which stores a first data value (e.g., a binary weight value), and a sensor connected to a sense node, which outputs a second data value (e.g., an analog input value). Each cell is selectively operable in a functional computing mode during which the voltage level on a bit line is adjusted as a function of both the first data value and the second data value. Each cell is further selectively operable in a storage node read mode. Furthermore, depending upon the type of memory structure (e.g., a DRAM structure), each cell is selectively operable in a storage node write mode.

Abstract: Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator has a layer stack arranged over a section of a waveguide core. The layer stack includes a first layer, a second layer, and a third layer. The first layer, the second layer, and the third layer are each composed of either copper or indium-tin oxide.

Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

Abstract: One illustrative device disclosed herein includes a layer of semiconductor material and a first Bragg reflector structure positioned in the layer of semiconductor material, wherein the first Bragg reflector structure comprises a plurality of dielectric elements and a first internal area defined by an innermost of the first plurality of dielectric elements. In this example, the device also includes an optical component positioned above the layer of semiconductor material, wherein at least a portion of the optical component is positioned within a vertical projection of the first internal area.

Abstract: Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a light-absorbing region having a side edge, an anode adjacent to the side edge of the light-absorbing region, and a cathode adjacent to the side edge of the light-absorbing region.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to photodiode structures and methods of manufacture. The structure includes: a charge region having a first doping concentration and a variable width; a multiplication region adjacent to the charge region; and an absorption region adjacent to the variable width charge region.

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A waveguide crossing includes a first arm and a second arm. A waveguide loop couples the first arm of the waveguide crossing to the second arm of the waveguide crossing. The waveguide crossing and the waveguide loop provide a structure for the polarizer.

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.