Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A first layer and a second layer are positioned in a layer stack on a surface of a waveguide core. The first layer is positioned in the layer stack between the second layer and the surface of the waveguide core. The waveguide core is composed of a first material having a first refractive index, the first layer is composed of a second material having a second refractive index that is less than the first refractive index of the first material, and the second layer is composed of a third material having a third refractive index that is less than the second refractive index of the second material.

Abstract: Structures including a waveguide core and methods of fabricating a structure that includes a waveguide core. A dielectric layer including a trench with a first sidewall and a second sidewall, and a waveguide core positioned inside the trench between the first and second sidewalls of the trench. The waveguide core has a first width, and the trench has a second width between the first and second sidewalls that is greater than the first width.

Abstract: Disclosed are embodiments of an on-chip polarizer and of methods of forming the polarizer. The polarizer includes first and second waveguides with different shapes at different design levels above a substrate. The first waveguide has a main body between an input end and an output end. The second waveguide is spiral in shape with an inner end and with an outer end that is evanescently coupled to the main body of the first waveguide. Light signals, including first light signals with a first type polarization and second light signals with a second type polarity, are received at the input end of the first waveguide. The first waveguide passes the first light signals to the output end and passes at least some second light signals out the main body and into the outer end of the second waveguide. The second waveguide attenuates the received second light signals.

Abstract: A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.

Abstract: One illustrative photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, the N-doped waveguide structure comprising a plurality of first fins, and a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. In this example, the photodetector also includes at least one N-doped contact region positioned in the semiconductor material and a P-doped contact region positioned in the detector structure.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to rib waveguide structures and methods of manufacture. The structure includes: a waveguide structure comprising one or more bends, an input end and an output end; and grating structures which are positioned adjacent to the one or more bends of the waveguide structure.

Abstract: Structures for a bitcell of a non-volatile memory and methods of fabricating and using such structures. Non-volatile memory elements are arranged in a Wheatstone bridge arrangement having a first terminal and a second terminal. A first field-effect transistor is coupled with the first terminal of the Wheatstone bridge arrangement, and a second field-effect transistor is coupled with the second terminal of the Wheatstone bridge arrangement.

Abstract: Structures for a polarizer and methods of fabricating a structure for a polarizer. A first waveguide core includes a section and a taper connected to the section. A second waveguide core is laterally positioned adjacent to the taper of the first waveguide core. An absorber is connected to the section of the first waveguide core. The absorber is composed of germanium.

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, an N-doped impact ionization region positioned above the N-doped anode region and at least one P-doped charge region positioned above the N-doped impact ionization region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and a P-doped cathode region positioned above the at least one P-doped charge region.

Abstract: One illustrative photodiode disclosed herein includes an N-doped anode region, a P-doped cathode region and at least one P-doped charge region positioned laterally between the N-doped anode region and the P-doped cathode region. In this example, the photodiode also includes a plurality of quantum dots embedded within the at least one P-doped charge region and an N-doped impact ionization region positioned laterally between the N-doped anode region and the at least one P-doped charge region.

Abstract: Embodiments of the disclosure provide a waveguide-confining layer, a photonic integrated circuit (PIC) die with embodiments of a waveguide-confining layer, and methods to form the same. The waveguide-confining layer may include an oxide layer over a buried insulator layer, a silicon-based optical confinement structure embedded within or positioned on the oxide layer, and first and second blocking layers over the oxide layer and separated from each other by a horizontal slot. The first and second blocking layers include a metal or an oxide. A gain medium is positioned on the oxide layer and within the horizontal slot between the first and second blocking layers, and has a lower refractive index than each of the first and second blocking layers. The gain medium is vertically aligned with the silicon-based optical confinement structure, and a portion of the oxide layer separates the gain medium from the silicon-based optical confinement structure.

Abstract: Optical coupler structures include a waveguide having waveguide metamaterial segments aligned along a first line. A second insulator is on the first insulator and the waveguide metamaterial segments. A coupler structure is in the second insulator and has coupler metamaterial segments aligned along a second line. The first line and the second line are parallel and within a plane. A portion of the waveguide overlaps a portion of the coupler structure. The waveguide metamaterial segments intersect the plane and have first widths perpendicular to the plane, and the first widths have a first taper along the first line. The coupler metamaterial segments intersect the plane and have second widths in the direction perpendicular to the plane. The second widths have a second taper along the second line that is different from the first taper of the first widths where the waveguide overlaps the coupler structure.

Abstract: One optical antenna coupler includes a base body having a first waveguide and a second waveguide and a plurality of antenna coupler elements positioned above an upper surface of the base body that are adapted to be irradiated by an incident light. The plurality of antenna coupler elements includes at least one variable optical characteristics (VOC) antenna coupler element that comprises a VOC material, wherein the at least one VOC antenna coupler element is operatively coupled to a first energy source. The VOC antenna coupler element is adapted to be transitioned from a metallic state to an insulator state and vice versa. In the metallic state, substantially all of the incident light is directed out of the optical antenna coupler via the first waveguide and, in the insulator state, substantially all of the incident light is directed out of the optical antenna coupler via the second waveguide.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to non-planar waveguide structures and methods of manufacture. The structure includes: a first waveguide structure; and a non-planar waveguide structure spatially shifted from the first waveguide structure and separated from the first waveguide structure by an insulator material.

Abstract: Structures for a waveguide coupler and methods of fabricating a structure for a waveguide coupler. A first waveguide core has a first width, a second waveguide core has a second width less than the first width, and a waveguide coupler includes first and second tapers that are positioned between the first waveguide core and the second waveguide core. The second taper is directly connected with the first taper, and the first and second tapers connect the first and second waveguide cores.

Abstract: Disclosed are embodiments of an integrated circuit structure (e.g., a processing chip), which includes an array of integrated pixel and memory cells configured for deep in-sensor, in-memory computing (e.g., of neural networks). Each cell incorporates a memory structure (e.g., DRAM structure or a ROM structure) with a storage node, which stores a first data value (e.g., a binary weight value), and a sensor connected to a sense node, which outputs a second data value (e.g., an analog input value). Each cell is selectively operable in a functional computing mode during which the voltage level on a bit line is adjusted as a function of both the first data value and the second data value. Each cell is further selectively operable in a storage node read mode. Furthermore, depending upon the type of memory structure (e.g., a DRAM structure), each cell is selectively operable in a storage node write mode.

Abstract: One illustrative device disclosed herein includes a micro-ring modulator that comprises an inner ring, an outer ring and a doped waveguide ring positioned between the inner ring and the outer ring. The device also includes an upper bus waveguide that is positioned vertically above at least a portion of the doped waveguide ring and at least a portion of the outer ring.

Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A first layer and a second layer are positioned in a layer stack on a surface of a waveguide core. The first layer is positioned in the layer stack between the second layer and the surface of the waveguide core. The waveguide core is composed of a first material having a first refractive index, the first layer is composed of a second material having a second refractive index that is less than the first refractive index of the first material, and the second layer is composed of a third material having a third refractive index that is less than the second refractive index of the second material.

Abstract: Structures including a grating coupler and methods of fabricating such structures. The structure includes a waveguide core, a bend, and a grating coupler coupled to the waveguide core by the bend. The grating coupler includes grating structures that are positioned with a spaced relationship in a layer stack above the bend.

Abstract: Structures including a grating coupler and methods of fabricating such structures. The structure includes a waveguide core, a bend, and a grating coupler coupled to the waveguide core by the bend. The grating coupler includes grating structures that are positioned with a spaced relationship in a layer stack above the bend.