Patents by Inventor Akira Mase

Akira Mase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4975145
    Abstract: An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the periphery portions of the substrates which are unnecessary for the pixcels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
    Type: Grant
    Filed: January 26, 1990
    Date of Patent: December 4, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4974939
    Abstract: An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the periphery portions of the substrates which are unnecessary for the pixels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
    Type: Grant
    Filed: December 13, 1988
    Date of Patent: December 4, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4954217
    Abstract: An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the peripery portions of the substrates which are unnecessary for the pixcels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: September 4, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4934045
    Abstract: A method of producing patterns consisting of buslines and two or more sets of lead lines. The lead lines are formed together with fragments of the buslines. Portions of the lead lines are coated with insulating films. The fragments of the buslines are coupled by forming compensatory buslines in alignment therewith.
    Type: Grant
    Filed: January 30, 1989
    Date of Patent: June 19, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Akira Mase
  • Patent number: 4927493
    Abstract: An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the periphery portions of the substrates which are unnecessary for the pixels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
    Type: Grant
    Filed: July 21, 1988
    Date of Patent: May 22, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4924243
    Abstract: An improved liquid crystal device and manufacturing method for same are described. In the device, a pair of substrates, between which a liquid crystal layer is disposed, is joined with pillars inbetween functioning as spacers which are provided of a resin by printing. With this structure, the spacers can be in surface contact with the inside surfaces of the substrates on which electrode arrangement and active devices are formed.
    Type: Grant
    Filed: May 23, 1988
    Date of Patent: May 8, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Masahiko Sato, Akira Mase, Hiroyuki Sakayori, Shunpei Yamazaki
  • Patent number: 4922972
    Abstract: A method of filling a liquid crystal device including a pair of parallel substrates having external surfaces with a liquid crystal material is set forth. The liquid crystal device is filled by disposing the liquid crystal device in a vacuum chamber between a pair of opposed parallel plates, evacuating the vacuum chamber, supplying the liquid crystal material to an inlet of the device, elevating the pressure in the chamber to allow the liquid crystal material to enter a space formed between the parallel substrates through the inlet by virtue of a differential pressure between the inside and the outside of the liquid crystal device, and applying opposed pressure with the parallel plates to the external surfaces of the parallel substrates respectively in order to form a uniform liquid crystal device. With the external pressure being applied to compensate for the expansion of the liquid crystal device during the elevation of the pressure within the vacuum chamber.
    Type: Grant
    Filed: March 25, 1988
    Date of Patent: May 8, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshio Watanabe, Akio Osabe, Akira Mase, Hiroyuki Sakayori, Masahiko Sato, Kaoru Tabata
  • Patent number: 4922974
    Abstract: A method of filling a liquid crystal device with a blended liquid crystal material is set forth. The liquid crystal device is filled by disposing the liquid crystal device having an inlet port, in a vacuum chamber, evacuating the vacuum chamber, supplying the inlet port with the blended liquid crystal material, and elevating the pressure in the chamber to allow the blended liquid crystal material to fill the liquid crystal device through the inlet port by virtue of the differential pressure between the inside and the outside of the liquid crystal device, with the temperature of the blended liquid crystal material being maintained, until the liquid crystal device is completely filled with the blended liquid crystal material, at a temperature higher than the transition temperature of any one of the constituents of the blended liquid crystal material so that the blended liquid crystal material is transformed in its isotropic phase.
    Type: Grant
    Filed: February 14, 1989
    Date of Patent: May 8, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshio Watanabe, Akio Osabe, Akira Mase, Hiroyuki Sakayori, Masahiko Sato, Kaoru Tabata
  • Patent number: 4917474
    Abstract: An optoelectronic panel is disclosed wherein the liquid crystal device and the photo detecting device are formed on a common transparent substrate. The liquid crystal display device includes at least one liquid crystal element which is supplied with a drive signal via a non-single-crystal semiconductor diode serving as a non-linear element and a photo diode of the same structure as the non-single-crystal semiconductor diode serving as the non-linear element of the liquid crystal display device. The liquid crystal display device and the photo detecting device are disposed side by side on the transparent substrate. The liquid crystal element, the non-linear element, the non-single-crystal element and the non-single-crystal semiconductor diode, as the non-linear element, of the liquid crystal display device are formed adjacent one another on the transparent substrate.
    Type: Grant
    Filed: May 23, 1988
    Date of Patent: April 17, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Toshimitsu Konuma
  • Patent number: 4875378
    Abstract: A new type of pressure sensor is disclosed here. The sensor is composed of a pair of glass substrates and a ferroelectric liquid crystal which is interposed between the substrates and exhibits piezoelectric effect. Because of crystalline property in liquid phase, the piezoelectric medium can be easily disposed and aligned between the substrates in light of the orientation of the surface contiguous to the liquid crystal layer.
    Type: Grant
    Filed: January 29, 1988
    Date of Patent: October 24, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase
  • Patent number: 4861143
    Abstract: A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.
    Type: Grant
    Filed: December 2, 1987
    Date of Patent: August 29, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima, Toshimitsu Konuma, Toshiji Hamatani, Akira Mase, Mitsunori Sakama, Minoru Miyazaki, Kaoru Koyanagi, Toshiharu Yamaguchi
  • Patent number: 4854675
    Abstract: An improved liquid crystal device for display is disclosed. The device is comprised of a pair of substrates on whose insides a number of electrode strips are formed in a matrix. The electrode strips are formed also near the periphery portions of the substrates which are unnecessary for the pixels of the display. By virtue of the excess electrode strips, joining the substrates can be done without special attention to the coincidence of the substrates.
    Type: Grant
    Filed: August 7, 1987
    Date of Patent: August 8, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4855805
    Abstract: The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
    Type: Grant
    Filed: June 3, 1988
    Date of Patent: August 8, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama, Takashi Inushima
  • Patent number: 4844588
    Abstract: A method for manufacturing a liquid crystal device including forming a semiconductor layer on a first substrate and an underlying conductive layer; separating the semiconductor layer and the underlying conductive layer into the elements of an array by removing the parts of the semiconductor and the conductive layer between the elements; insulating the side surfaces of the elements of said array; forming an overlying conductive layer on the first substrate over the array; removing the conductive layer other than at least one strip extending over a part of each surface of the elements arranged in a line, together with the underlying semiconductor layer whereby parts of the separated underlying conductors are exposed in the form of a plurality of first electrodes; and mating the first substrate to a second substrate having a plurality of second electrodes corresponding to the first electrodes, with a liquid crystal layer in between.
    Type: Grant
    Filed: January 25, 1988
    Date of Patent: July 4, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inushima, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama
  • Patent number: 4828967
    Abstract: A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photocurable resin and exposing the photocurable resin to light from the side of the transparent substrate, the photocurable resin being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.
    Type: Grant
    Filed: June 17, 1986
    Date of Patent: May 9, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
  • Patent number: 4820612
    Abstract: A method of forming an insulated, non-linear, multi-layered, electronic element on a transparent substrate by surrounding the element with a photosensitive organic resin layer and exposing the photosensitive layer to light from the side of the transparent substrate, the photosensitive layer being heat-hardened before and after the light exposure thereof so that the resulting insulating layer prevents electrical short circuits between the layers of the non-linear, multi-layered, electronic element.
    Type: Grant
    Filed: August 18, 1987
    Date of Patent: April 11, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
  • Patent number: 4799776
    Abstract: The liquid crystal display according to this invention comprises a liquid crystal cell having a pair of substrates with faced insides which are provided with electrodes, ferroelectric liquid crystal with a chiral smectic C phase in between said substrates and a polarizing plate on the light incidence side. One of said electrodes is a relfective electrode. The display is utilized with microcomputers, word processors, television or so on, and wherein, due to a small number of parts, the absorption loss of light is small and a reflective plate is prevented from being oxided and therefore degraded in reflection index, since it is not exposed to air.
    Type: Grant
    Filed: March 2, 1987
    Date of Patent: January 24, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Takashi Inujima, Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Toshiji Hamatani, Minoru Miyazaki, Kaoru Koyanagi, Toshiharu Yamaguchi
  • Patent number: 4786358
    Abstract: An improved method for forming a pattern on a substrate coated with a film is shown. The substrate is irradiated with a laser beam which is shaped through a mask, and a portion of the film is removed by the energy of the laser beam to produce the desired pattern. The laser beam is emitted from an exmer laser.
    Type: Grant
    Filed: August 7, 1987
    Date of Patent: November 22, 1988
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Hiroyuki Sakayori
  • Patent number: 4780794
    Abstract: A electronic multilayer device is formed within a photocured insulative layer using a transparent substrate thereby forming a surface contamination free device without shorts between the layers of the device.
    Type: Grant
    Filed: August 10, 1987
    Date of Patent: October 25, 1988
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Akira Mase, Toshimitsu Konuma, Mitsunori Sakama, Takashi Inushima, Shunpei Yamazaki
  • Patent number: 4744862
    Abstract: A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminat
    Type: Grant
    Filed: January 2, 1987
    Date of Patent: May 17, 1988
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akira Mase, Toshimitsu Konuma, Minoru Miyazaki, Mitsunori Sakama, Takashi Inushima