Abstract: A reflective-type liquid crystal device including a first substrate; a plurality of color layers formed on the substrate and arranged in the form of a matrix; a first electrode arrangement formed on the substrate; a light modulating layer including a dispersion-type liquid crystal adjacent the first electrode arrangement; a second electrode arrangement opposite to the first electrode arrangement with the light modulating layer therebetween; and a plurality of thin film transistors for switching the light modulating layer.

Abstract: An electro-optical device system and a method of driving a liquid crystal display panel thereof capable of constructing clear visual images with low power consumption are described. In the display panel, a plurality of conductive pads are opposed to a back electrode with a liquid crystal layer inbetween. Control signals are supplied to the conductive pads through complementary transistors comprising a p-channel field effect transistor and an n-channel field effect transistor connected between V.sub.DD and V.sub.SS lines of a control circuit. The information being displayed is simultaneously stored in a first memory. Information desired to be displayed is stored in a second memory and compared with the content of the first memory to produce exclusive ORs thereof. The display panel is driven only when and where the information desired to be displayed is dissimilar to the information being displayed.

Abstract: An insulated-gate field-effect transistor adapted to be used in an active-matrix liquid-crystal display. The channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

Abstract: An electro-optical device is disclosed. The electro-optical device comprises pixels arranged in rows and columns. Each pixel comprises at least one complementary TFT (thin film transistor) pair. Each complementary TFT pair consists of an n-channel TFT and a p-channel TFT. The gates of the complementary TFTs of each pixel are all connected to a signal line extending in the Y-direction. The input terminals of the TFTs of each pixel are connected to a pair of signal lines extending in the X-direction. Each pixel has at least one pixel electrode connected to the outputs of the TFTs thereof. In the operation of the electro-optical device, an electric signal is applied to the pair of signal lines extending in the X-direction and an electric signal is applied to the signal line extending in the Y-direction for the duration of the electric signal applied to the pair of signal lines extending in the X-direction.

Abstract: A grey tone display and a driving method are described. The display comprises a light influencing layer, and electrode pad located adjacent to the layer at one side of the layer in order to define a pixel in the layer, an n-channel field effect transistors connected to the electrode pad at its source terminal, a p-channel field effect transistors connected to the electrode pad at its source terminal, a first control line connected to the drain terminal of the n-channel field effect transistor, a second control line connected to the drain terminal of the p-channel field effect transistor, a third control line connected to the gate terminals of the n-channel field effect transistor and the p-channel field effect transistor, and a control circuit for supplying control signals to the first, second and third control lines. By this configuration, the voltage of the electrode pad can be arbitrarily controlled by adjusting the input level at the gate terminals.

Abstract: A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.

Abstract: A wiring formed on a substrate is oxidized and the oxide is used as a mask for forming source and drain impurity regions of a transistor, or as a material for insulating wirings from each other, or as a dielectric of a capacitor. Thickness of the oxide is determined depending on purpose of the oxide. In a transistor adapted to be used in an active-matrix liquid-crystal display, the channel length, or the distance between the source region and the drain region, is made larger than the length of the gate electrode taken in the longitudinal direction of the channel. Offset regions are formed in the channel region on the sides of the source and drain regions. No or very weak electric field is applied to these offset regions from the gate electrode.

Abstract: An electro-optical device includes a light amplifying portion comprising a first substrate having a transparent conductive film, a photoconductor whose electric resistance is lowered in accordance with light irradiation and a dielectric thin film, a second substrate having a transparent conductive film and uniaxially-orienting layer and a ferroelectric liquid crystal or antiferroelectric liquid crystal layer sandwiched between the first and second substrate, an image write-in portion comprising a display body, a mirror for splitting an image light into three color lights and light shutters for performing a switching operation between transmission and interception of the split lights, and serves to irradiate the image light through the first substrate of each light amplifying portion, an image read-out portion comprising a light source for irradiating light through the second substrate of each of the three light amplifying portions, and red, green and blue color filter portions, and an imaging portion for synt

Abstract: An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

Abstract: A method for manufacturing a liquid crystal device, particularly a dispersion-type liquid crystal electrooptical device, which comprises a pair of substrates having incorporated therebetween a light-control layer comprising a transparent solid and a liquid crystal material and spacers, said substrates having provided thereon electrode layers and at least one of the substrates being transparent, is disclosed. The method comprises:coating the electrode layer side of one of the substrates with a material which gives the light-control layer; and, laminating and fixing the pair of substrates to give a predetermined layered structure.The spacers are uniformly disposed between the substrates by dispersing spacers on one of the electrode layers or on the light-control layer or applying a mixture comprising spacers, a liquid crystal material and a material for providing a transparent solid on one of the electrode layers.

Abstract: A method of fine intermediate gradation display by an electro-optical device, with little difference in devices is disclosed. In case of driving each picture element of an active matrix electro-optical device, a visual intermediate gradation display can be carried out by using a modified transfer gate complementary field effect device, in a structure where one of input/output terminal thereof is connected with a picture element electrode, by applying a bipolar pulse to its control electrode in a cycle and by applying voltage to the other input/output terminal, or by cutting voltage at the same time, and whereby digitally controlling duration of voltage applied to the picture element.

Abstract: The method of fine gradation display by an electro-optical device with little influence by difference in elemental devices, is disclosed, which is an object of the present invention. In case of an active matrix electro-optical device, a visual gradation display can be carried out by digitizing an analog image signal externally supplied by means of binary notation, by temporarily storing the digital signal thus obtained, by outputting the digital signal to a circuit of next step in a proper order, and by controlling the output timing of the signal so as to output the signal to the active matrix electro-optical device, and whereby digitally controlling the time for applying voltage to a picture element.

Abstract: An electro-optical device is disclosed. The electro-optical device comprises pixels arranged in rows and columns. Each pixel comprises at least one complementary TFT (thin film transistor) pair. Each complementary TFT pair consists of an n-channel TFT and a p-channel TFT. The gates of the complementary TFTs of each pixel are all connected to a signal line extending in the Y-direction. The input terminals of the TFTs of each pixel are connected to a pair of signal lines extending in the X-direction. Each pixel has at least one pixel electrode connected to the outputs of the TFTs thereof. In the operation of the electro-optical device, an electric signal is applied to the pair of signal lines extending in the X-direction and an electric signal is applied to the signal line extending in the Y-direction for the duration of the electric signal applied to the pair of signal lines extending in the X-direction.

Abstract: A liquid crystal display of the chiral smectic type is caused to have grey scales, by applying a voltage of an intermediate level to the liquid crystal. Within each picture element of the display, there are a number of domains of the liquid crystal layer, some being transparent while the other being opaque rendering grey tone to the picture element.

Abstract: An electro-optical apparatus comprising a pair of first and second devices, which are provided in an optical path extending from a light source and a screen for outputting a picture image thereon, the first and second devices each including a pair of first and second substrates each having electrodes and leads formed thereon, which sandwich therebetween an electro-optical modulating layer (comprising for example a liquid crystal composition) and a means for orienting the liquid crystal composition at least in an initial stage. The light transmission factor of the second device changes with time rotationally in the ratios of approximately 2.sup.0 to 2.sup.1 to 2.sup.2 to . . . to 2.sup.n (n is an arbitrary natural number). Thus, it is possible to realize tonal display, reduce the overall weight of the apparatus and improve the yield.

Abstract: A method of manufacturing electro-optical devices is described. The method comprises steps of forming a first electrode arrangement on a substrate, coating an electro-optical modulating layer comprising a liquid crystal on the substrate over the first electrode arrangement and forming a second electrode arrangement on the electro-optical modulating layer. The electro-optical modulating layer is prepared by dispersing a liquid crystal in a pre-polymer which can be cured by UV light or other suitable procedures.

Abstract: An insulated gate field effect semiconductor device comprising a substrate having provided thereon a thin-film structured insulated gate field effect semiconductor device, said device being characterized by that it comprises a metal gate electrode and at least the side thereof is coated with an oxide of the metal. The insulated gate field effect semiconductor device according to the present invention is also characterized by that the contact holes for the extracting contacts of the source and drain regions are provided at about the same position of the end face of the anodically oxidized film established at the side of the gate. Furthermore, the present invention provides a method for forming insulated gate field effect semiconductor devices using less masks.

Abstract: A novel structure of an active electro-optical device is disclosed. The device is provided with complementary thin film insulated gate field effect transistors (TFTs) therein which comprise a P-TFT and an N-TFT. P-TFT and N-TFT are connected to a common signal line by the gate electrodes thereof, while the source (or drain) electrodes thereof are connected to a common signal line as well as to one of the picture element electrodes.In case of driving the active electro-optical device, a gradation display can be carried out in a driving method having a display timing determined in relation to a time F for writing one screen and a time (t) for writing in one picture element, by applying a reference signal in a cycle of the time (t), to the signal line used for a certain picture element driving selection, and by applying the select signal to the other signal line at a certain timing within the time (t), and whereby setting the value of the voltage to be applied to a liquid crystal.

Abstract: An integrated circuit is mounted on and electrically connected to an electric device with an adhesive therebetween. The adhesive comprises a photo-curable resin and a heat-curable resin. After mounted on the electric device, the integrated circuit is temporarily adhered to the device by exposing the adhesive to a ultraviolet light in order to cure only the photo-curable component of the adhesive. The operation of the electric device connected to the integrated circuit is then tested. If the integrated circuit is faulty, it is replaced. If faultless, the integrated circuit is permanently fixed to the electric device by heating to completely cure the adhesive.

Abstract: A liquid crystal device comprising a liquid crystal electro-optic layer supported between a pair of substrates furnished with electrodes, provided that at least one of said substrates is transparent, characterized by that said liquid crystal electro-optic layer comprises a liquid crystal material, a first transparent material, and a second transparent substance whose refractive index is different from those of the liquid crystal material and the first transparent material is disclosed. The liquid crystal electro-optic layer may otherwise comprise a liquid crystal material and a mixed transparent substances provided that the refractive index thereof is controlled to be about the same as that of the liquid crystal material. The device has improved display contrast and is capable of an increase light transmittance to 4 times as large as that of a conventional one.