Abstract: The invention relates to a communication system for automation and process engineering, having a controller (2) as a data receiver and a sensor (3) as a data source, which use a communication line to exchange digital data as voltage signals based on the IO-Link standard.

Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.

Abstract: The invention relates to a communication system for automation and process engineering, having a controller (2) as a data receiver and a sensor (3) as a data source, which use a communication line to exchange digital data as voltage signals based on the IO-Link standard.

Abstract: The disclosure relates to a communication system for automation and process engineering, having a controller as a signal receiver and a sensor as a signal source, which interchange voltage and/or current signals via a connection line, wherein the sensor is suitable for providing digital data according to the IO-Link standard, and the controller has only an analogue and/or switching signal input.

Abstract: The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic layered Deposition (ALD) Al2O3 on a photomask, subjecting said film of Al2O3 on the photomask to a plasma treatment and then irradiating the deposited film of ALD Al2O3 on the coated photomask at a wavelength of 193 nm.

Abstract: A laser apparatus for use in a surgical procedure is disclosed including a housing forming a part of a handpiece and including interior and exterior regions, a laser cavity extending within the interior region of the housing, at least a portion of an operating laser element positioned with the interior region of the housing for generating an operating beam, and a controller to control a focal position of the operating beam to a location above the plane of the tissue for ablation of the tissue by laser induced breakdown thereof.

Abstract: The invention relates to a method for the contactless tapping of communication signals that are exchanged between two communication units, in particular a sensor or actuator and a digital evaluating or control unit, wherein the communication signals are transmitted on a line (2) of a multi-core cable (1) as voltage signals.

Abstract: The invention relates to a method for the contactless tapping of communication signals that are exchanged between two communication units, in particular a sensor or actuator and a digital evaluating or control unit, wherein the communication signals are transmitted on a line (2) of a multi-core cable (1) as voltage signals.

Abstract: A laser apparatus for use in a surgical procedure including a housing forming a part of a handpiece and including interior and exterior regions. A laser cavity extending within the interior region of the housing. A cooling arrangement generating a stream of a first coolant. A precooling unit containing a second concentrated coolant. The cooling arrangement communicates with the precooling unit, so that a cooling stream having thermal calorific capacity higher than the thermal calorific capacity of the first coolant enters the laser cavity.

Abstract: A method of minimizing the deposition of debris onto a sample being ablated. The method comprises: 1) reducing a laser pulse energy to approximately a threshold level for ablation; 2) focusing the energy using an immersion object lens having a final element and 3) ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase.

Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Abstract: An image of a mask pattern is overlaid on an image of a mask blank annotated with the center location and dimensions of each measured mask defect. Design clips centered at the measured defects are generated with lateral dimensions less than allowable movement of the mask pattern over the mask blank. Each design clip is converted into a binary image including pixels corresponding to defect-activating regions and pixels corresponding to defect-hiding regions. Each pixel region representing the defect-activating region is expanded by laterally biasing peripheries by one half of the lateral extent of the defect located within the corresponding design clip. Biased design clips are logically compiled pixel by pixel to determine an optimal pattern shift vector representing the amount of pattern shift.

Abstract: Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Abstract: A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.

Abstract: An image of a mask pattern is overlaid on an image of a mask blank annotated with the center location and dimensions of each measured mask defect. Design clips centered at the measured defects are generated with lateral dimensions less than allowable movement of the mask pattern over the mask blank. Each design clip is converted into a binary image including pixels corresponding to defect-activating regions and pixels corresponding to defect-hiding regions. Each pixel region representing the defect-activating region is expanded by laterally biasing peripheries by one half of the lateral extent of the defect located within the corresponding design clip. Biased design clips are logically compiled pixel by pixel to determine an optimal pattern shift vector representing the amount of pattern shift.

Abstract: An image of a mask pattern is overlaid on an image of a mask blank annotated with the center location and dimensions of each measured mask defect. Design clips centered at the measured defects are generated with lateral dimensions less than allowable movement of the mask pattern over the mask blank. Each design clip is converted into a binary image including pixels corresponding to defect-activating regions and pixels corresponding to defect-hiding regions. Each pixel region representing the defect-activating region is expanded by laterally biasing peripheries by one half of the lateral extent of the defect located within the corresponding design clip. Biased design clips are logically compiled pixel by pixel to determine an optimal pattern shift vector representing the amount of pattern shift.

Abstract: One exemplary aspect of this invention pertains to a method to evaluate an image processing algorithm. The method includes varying a parameter of a model of an imaging system and, for each variation of the parameter, calculating with a data processor a corresponding image of a sample; applying an image processing algorithm to the calculated corresponding images of the sample; and determining an ability of the image processing algorithm to detect the variation in the parameter.

Abstract: In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (Fth) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused above the surface of a material where laser induced breakdown is desired.