Abstract: An element is deposited by flowing a gas through a solid donor compound that includes the element, and over a substrate. The flow of gas deposits a film of a few monolayers of donor compound on the substrate. An optical radiation source (e.g., a femtosecond laser) which produces optical radiation at an instantaneous intensity sufficient to cause non linear or otherwise enhanced interaction between optical radiation photons and the donor compound is used to decompose the donor compound and deposit the metal on the substrate. After an initial deposit of the donor compound is produced, optical radiation can be absorbed and heat the substrate in the localized area of the deposit in order to accelerate the deposition process by thermally decomposing the donor compound.

Abstract: A method and an apparatus of minimizing the deposition of debris onto a sample being ablated. The method comprising the steps of: 1) reducing a laser pulse energy to approximately a threshold level for ablation; and 2) ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase. An apparatus for ablating a region of a sample with a laser beam. The apparatus comprises: 1) a source providing a pulsed laser beam of a certain energy, the source focusing the laser beam on the sample to ablate a region of the sample; and 2) a device for providing a flowing fluid over the region being ablated to remove the ablation products.

Abstract: A system and method for repairing defects in semiconductor wafers utilizing a repair tool including a device for applying energy to obliterate defects at locations on the wafer, the method being a graphical approach implementing a graphical user interface (GUI) comprising a pixel screen display and comprising the steps of: via the interface, identifying a wafer defect to repair and enclosing the defect within a polygonal repair outline drawn using a default line thickness; graphically adjusting the line thickness to modify the enclosed polygonal repair outline area; automatically detecting one or more areas within an interior region of the modified polygonal repair outline area; and, scanning the modified polygonal repair outline, and for each pixel location inside the one or more detected areas, applying energy to the wafer coordinated to the pixel location for repairing the defect, whereby the identification of said pixel location is accomplished using standard graphical tools with minimal operator interven

Abstract: A system and method for repairing defects in semiconductor wafers utilizing a repair tool including a device for applying energy to obliterate defects at locations on the wafer, the method being a graphical approach implementing a graphical user interface (GUI) comprising a pixel screen display and comprising the steps of: via the interface, identifying a wafer defect to repair and enclosing the defect within a polygonal repair outline drawn using a default line thickness; graphically adjusting the line thickness to modify the enclosed polygonal repair outline area; automatically detecting one or more areas within an interior region of the modified polygonal repair outline area; and, scanning the modified polygonal repair outline, and for each pixel location inside the one or more detected areas, applying energy to the wafer coordinated to the pixel location for repairing the defect, whereby the identification of said pixel location is accomplished using standard graphical tools with minimal operator interven

Abstract: A measurement apparatus for determining the position of an object relative to a reference surface, with a measurement nozzle, a reference nozzle, and a measurement device, the outlet opening of the measurement nozzle being located in the reference surface. A compressed air source provides air having a certain feed pressure so that the measurement device acquires one of three state variables: flow rate, pressure and speed of the air upstream of the measurement nozzle.

Abstract: An electrical transducer using the two-wire process has a sensor outputting a value corresponding to the quantity which is to be measured, an analog end stage that is connected downstream of the sensor, a processor circuit, and an analog measurement signal transmission path. The end stage converts the output signal of the sensor into an impressed output current with a magnitude which is a measure of the quantity to be measured, wherein and the electronic transducer can be controlled with the processor circuit.

Abstract: In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (Fth) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused above the surface of a material where laser induced breakdown is desired.

Abstract: In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (Fth) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused above the surface of a material where laser induced breakdown is desired.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A method of repairing defects on masks includes the step of providing a coating on the mask to prevent damage to clear regions of the mask from laser ablation splatter, laser ablation caused quartz pitting, laser deposition staining, and FIB caused gallium staining. The coating is a metal, a polymer, or a carbon material. The coating is formed on clear regions of the mask as well as either over or under the light absorbing material of the mask. A coating comprising a thin copper layer significantly improves imaging with the ion beam while protecting clear regions of the mask from FIB stain. A coating formed of a photosensitive polymer is used to etch opaque defects. While wanted opaque regions adjacent an opaque defect are also etched in this etch step, these created clear defects are then repaired in a subsequent FIB deposition step while a copper coating protects adjacent clear regions from FIB stain.

Abstract: A focused ion beam metrology device and method are disclosed. A focused ion beam is used to measure dimensions of semiconductor features, such as top-down linewidth measurement. Low intensity focused ion beams form top view images of the semiconductor. High intensity focused ion beams etch the semiconductor in the presence of etch-enhancing material. A crater is etched to expose a cross-section the of semiconductor. The cross-section is imaged by directing low intensity focused ion beams toward the cross-section. This may be achieved by tilting the semiconductor. A three dimensional profile of a feature may be formed by successively etching the feature top surface and forming a top view image thereof. Overlaying the successive top view images forms the three dimensional profile.

Abstract: In the preparation of dimethylamine-borane by reacting an alkali metal or alkaline earth metal borohydride with a dimethylammonium salt, the improvement which comprises effecting the reaction in a liquid mixture comprising dimethylamine as a solvent and an additional organic solvent.

Abstract: A transmission grid is disposed in a conventional focussed ion beam system which includes an ion beam source emitter or ion gun, electrodes to turn the ion beam off and on, a beam defining aperture and electrostatic lenses to focus the ion beam onto a target. The elements of the ion beam system are disposed in a chamber which is provided with an inlet port and an outlet port. Gas is introduced into chamber via the inlet port where it is ionized by the ion beam into an ion plasma to be used to deposit materials onto the target. The transmission grid, is interposed which is a fine mesh, passive element is located in the path of the ion beam and reduces the ion beam current density by a desired value. The transmission grid may be configured with a variety of different transmissions so the current density can be adjusted in different increments depending on the gas/type of deposition to be performed.

Abstract: An ion beam structure includes a gas container, such as a cylindrical can having first and second apertures through the center of the top and bottom walls respectively of the container such that a narrow ion beam is passed through the apertures and the center axis of the can and onto a target specimen such as a mask or chip or other article of manufacture disposed closely below the bottom of the can. The can may further include deflection means for applying voltages and/or magnetic fields to locations on the can (i.e., top, bottom, sides) to direct secondary charged particles such as electrons emitted from the specimen onto an electron detection means such that the structure functions as an imaging system. The electric and/or magnetic fields may be employed to increase the collection efficiency of the detector and thereby improve the quality of the image by increasing the signal to noise ratio.

Abstract: A gelatin capsule cap has an annular groove in the region of its open end to reduce ovality.

Abstract: A process and device for manufacturing a section, in particular a hollow section, especially from light metal billets. To this end a plurality of billets is simultaneously forced through the shape-giving cross-section of a die and united to form the matrix metal for the section. For this purpose at least two bores in the container are aligned with the shape-giving cross-section of the die.

Abstract: A process for improving the embossing properties of foamed sheets on a PVC basis including the steps of (1) treating the foamed sheets with a lacquer solution of 10 to 20% by weight of a resin in 4 to 10% by weight of a lacquer solvent having a boiling point greater than 190.degree. C., and in 70 to 86% by weight of a lower boiling point organic solvent; (2) drying the lacquer treated sheet at temperatures ranging from 70.degree. to 100.degree. C.; and (3) embossing said dryed sheet at temperatures greater than 200.degree. C.

Abstract: A process and apparatus for the indirect extrusion of hollow sections over a mandrel having a diameter d.sub.D from a plurality of billets each having a diameter d.sub.on wherein the volume throughput of metal is greater than that obtained by the indirect extrusion over a mandrel of said hollow sections from a single hollow billet under the same extrusion force thereby increasing productivity wherein the diameter of the mandrel d.sub.D with respect to the diameter d.sub.on of the billet to be extruded over the mandrel is d.sub.D <0.4 d.sub.on.