Abstract: Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.

Abstract: An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes portions serving as a transistor gate electrode, a plate of a metal-to-poly storage capacitor, and a plate of poly-to-active tunneling capacitors. A silicide-block film comprised of a layer of silicon dioxide underlying a top layer of silicon nitride blocks the formation of silicide cladding on the electrode, while other polysilicon structures in the integrated circuit, such as polysilicon-to-metal capacitors, are silicide-clad. Following silicidation, a capacitor dielectric is deposited over the remaining polysilicon structures, followed by formation of an upper metal plate.

Abstract: A CMOS integrated circuit containing an isolated n-channel DEMOS transistor and an isolated vertical PNP transistor has deep n-type wells and surrounding shallow n-type wells providing isolation from the p-type substrate. The isolated n-channel DEMOS transistor has an upper n-type layer providing an extended drain, and a lower p-type layer isolating the extended drain from the underlying deep n-type well. The isolated vertical PNP transistor has an upper n-type layer providing a base and a lower p-type layer providing a collector. A CMOS integrated circuit having opposite polarities of the transistors may be formed by appropriate reversals in dopant types.

Abstract: An integrated circuit containing a MOS transistor and a DEMOS transistor of a same polarity may be formed by implanting dopants of a same conductivity type as source/drain regions of the MOS transistor and the DEMOS transistor through a gate of the MOS transistor and through a gate of the DEMOS transistor. The implanted dopants are blocked from a drain-side edge of the DEMOS transistor gate. The implanted dopants form a drain enhancement region under the DEMOS transistor gate in a drift region of an extended drain of the DEMOS transistor.

Abstract: A method of fabricating a Metal-Oxide Semiconductor (MOS) transistor includes providing a substrate having a substrate surface doped with a second dopant type and a gate stack over the substrate surface, and a masking pattern on the substrate surface which exposes a portion of the substrate surface for ion implantation. A first pocket implantation uses the second dopant type with the masking pattern on the substrate surface. At least one retrograde gate edge diode leakage (GDL) reduction pocket implantation uses the first dopant type with the masking pattern on the substrate surface. The first pocket implant and retrograde GDL reduction pocket implant are annealed. After annealing, the first pocket implant provides first pocket regions and the retrograde GDL reduction pocket implant provides an overlap with the first pocket regions to form a first counterdoped pocket portion within the first pocket regions.

Abstract: A semiconductor controlled rectifier (FIG. 4A) for an integrated circuit is disclosed. The semiconductor controlled rectifier comprises a first lightly doped region (100) having a first conductivity type (N) and a first heavily doped region (108) having a second conductivity type (P) formed within the first lightly doped region. A second lightly doped region (104) having the second conductivity type is formed proximate the first lightly doped region. A second heavily doped region (114) having the first conductivity type is formed within the second lightly doped region. A buried layer (101) having the first conductivity type is formed below the second lightly doped region and electrically connected to the first lightly doped region. A third lightly doped region (102) having the second conductivity type is formed between the second lightly doped region and the third heavily doped region.

Abstract: A Metal-Oxide Semiconductor (MOS) transistor includes a substrate having a topside semiconductor surface doped with a first dopant type having a baseline doping level. A well is formed in the semiconductor surface doped with a second doping type. The well forms a well-substrate junction having a well depletion region. A retrograde doped region is below the well-substrate junction doped with the first dopant type having a peak first dopant concentration of between five (5) and one hundred (100) times above the baseline doping level at a location of the peak first dopant concentration, wherein with zero bias across the well-substrate junction at least (>) ninety (90) % of a total dose of the retrograde doped region is below the bottom of the well depletion region. A gate structure is on the well. Source and drain regions are on opposing sides of the gate structure.

Abstract: Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.

Abstract: Metal-oxide-semiconductor (MOS) transistors with reduced subthreshold conduction, and methods of fabricating the same. Transistor gate structures are fabricated in these transistors of a shape and dimension as to overlap onto the active region from the interface between isolation dielectric structures and the transistor active areas. Minimum channel length conduction is therefore not available at the isolation-to-active interface, but rather the channel length along that interface is substantially lengthened, reducing off-state conduction.

Abstract: Integrated circuits and manufacturing methods are presented for creating diffusion resistors (101, 103) in which the diffusion resistor well is spaced from oppositely doped wells to mitigate diffusion resistor well depletion under high biasing so as to provide reduced voltage coefficient of resistivity and increased breakdown voltage for high-voltage applications.

Abstract: An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.

Abstract: A Metal-Oxide Semiconductor (MOS) transistor includes a substrate having a topside semiconductor surface doped with a first dopant type having a baseline doping level. A well is formed in the semiconductor surface doped with a second doping type. The well forms a well-substrate junction having a well depletion region. A retrograde doped region is below the well-substrate junction doped with the first dopant type having a peak first dopant concentration of between five (5) and one hundred (100) times above the baseline doping level at a location of the peak first dopant concentration, wherein with zero bias across the well-substrate junction at least (>) ninety (90) % of a total dose of the retrograde doped region is below the bottom of the well depletion region. A gate structure is on the well. Source and drain regions are on opposing sides of the gate structure.

Abstract: A method of fabricating a Metal-Oxide Semiconductor (MOS) transistor includes providing a substrate having a substrate surface doped with a second dopant type and a gate stack over the substrate surface, and a masking pattern on the substrate surface which exposes a portion of the substrate surface for ion implantation. A first pocket implantation uses the second dopant type with the masking pattern on the substrate surface. At least one retrograde gate edge diode leakage (GDL) reduction pocket implantation uses the first dopant type with the masking pattern on the substrate surface. The first pocket implant and retrograde GDL reduction pocket implant are annealed. After annealing, the first pocket implant provides first pocket regions and the retrograde GDL reduction pocket implant provides an overlap with the first pocket regions to form a first counterdoped pocket portion within the first pocket regions.

Abstract: An analog floating-gate electrode in an integrated circuit, and method of fabricating the same, in which trapped charge can be stored for long durations. The analog floating-gate electrode is formed in a polycrystalline silicon gate level, and includes portions serving as a transistor gate electrode, a plate of a metal-to-poly storage capacitor, and a plate of poly-to-active tunneling capacitors. A silicide-block film comprised of a layer of silicon dioxide underlying a top layer of silicon nitride blocks the formation of silicide cladding on the electrode, while other polysilicon structures in the integrated circuit, such as polysilicon-to-metal capacitors, are silicide-clad. Following silicidation, a capacitor dielectric is deposited over the remaining polysilicon structures, followed by formation of an upper metal plate.

Abstract: An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.

Abstract: An integrated circuit having an SRAM cell includes a pair of cross-coupled inverters with first driver and load transistors connected to provide a first storage node and second driver and load transistors connected to provide a second storage node. The SRAM cell also includes first and second pass gate transistors controlled by at least one word line and respectively connected between a first bit line and the first storage node and a second bit line and the second storage node; wherein a first driver transistor threshold voltage is different than a second driver transistor threshold voltage and one of the first and second driver threshold voltages is different than a pass gate transistor threshold voltage. Alternately, a threshold voltage of the first and second driver transistors is different than a symmetrical pass gate transistor threshold voltage. Additionally, methods of manufacturing an integrated circuit having an SRAM cell are provided.

Abstract: An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.

Abstract: A method of fabricating an integrated circuit (IC) including a plurality of MOS transistors and ICs therefrom include providing a substrate having a silicon including surface, and forming a plurality of dielectric filled trench isolation regions in the substrate, wherein the silicon including surface forms trench isolation active area edges along its periphery with the trench isolation regions. A first silicon including layer is deposited, wherein the first silicon including extends from a surface of the trench isolation regions over the trench isolation active area edges to the silicon including surface. The first silicon including layer is completely oxidized to convert the first silicon layer to a silicon oxide layer, wherein the silicon oxide layer provides at least a portion of a gate dielectric for at least one of the plurality of MOS transistors.

Abstract: The present invention facilitates semiconductor device fabrication by providing mechanisms for utilizing different isolation schemes within embedded memory and other logic portions of a device. The isolation mechanism of the embedded memory portion is improved relative to other portions of the device by increasing dopant concentrations or reducing the depth of the dopant profiles within well regions of the embedded memory array. As a result, smaller isolation spacing can be employed thereby permitting a more compact array. The isolation mechanism of the logic portion is relatively less than that of the embedded memory portion, which permits greater operational speed for the logic.

Abstract: A method of fabricating an integrated circuit (IC) and ICs therefrom including a plurality of Metal Oxide Semiconductor (MOS) transistors having reduced gate dielectric thinning and corner sharpening at the trench isolation/semiconductor edge for gate dielectric layers generally 500 to 5,000 Angstroms thick. The method includes providing a substrate having a silicon including surface. A plurality of dielectric filled trench isolation regions are formed in the substrate. The silicon including surface forms trench isolation active area edges along its periphery with the trench isolation regions. An epitaxial silicon comprising layer is deposited, wherein the epitaxial comprising silicon layer is formed over the silicon comprising surface.