Abstract: Provided is a memory system comprising a plurality of memory channels each having a parity bit, a redundant array of independent devices (RAID) parity channel, and a controller of the memory system. The controller is configured to receive a block of data for storage in the memory channels and determine at least one of (i) when a data traffic demand on the memory channels is high and (ii) when a data traffic demand on the memory channels is low. Upon determining the data traffic demand is low, writing the block of data for storage in the memory channels and concurrently updating the parity bits and the RAID parity channel for the stored block of data. Upon determining the data traffic demand is high, only writing the data for storage in the memory channels.

Abstract: Provided is a memory system including a memory module bank comprising a plurality of memory cell arrays, each memory cell array comprising a plurality of memory cells arranged in wordlines and bitlines and a memory controller configured to receive from a central processing unit (CPU) a data byte to be stored in a wordline of the memory module bank. Also included is a logical-to-physical address mapping block (L2P AMB) configured to map a logical bitline address of the data byte to a physical bitline address of a first memory cell array of the plurality of memory cell arrays, wherein a plurality of logical bitline addresses of the data byte are shuffled to different physical bitline memory addresses of the first memory cell array. Each respective memory cell array of the plurality stores a respective bit value, corresponding to a common logical bitline address, to a different respective physical bitline in each different respective memory cell array of the plurality.

Abstract: Provided is a memory system including a plurality of memory submodules and a controller. Each submodule comprises a plurality of memory channels, each channel having a parity bit and a redundant array of independent devices (RAID) parity channel. The controller is configured to receive a block of data for storage in the plurality of memory submodules and determine whether a level of data traffic demand for a first of the plurality of submodules is high or low. When the data traffic demand is low, (i) writing a portion of the block of data in the first of the plurality of submodules and (ii) concurrently updating the parity bit and the RAID parity channel associated with the block of data. When the data traffic demand is high, (i) only writing the portion of the block of data in the first of the plurality of submodules and (ii) deferring updating of the parity bits and the RAID parity channel associated with the block of data.

Abstract: Systems, apparatuses, and methods can include a multi-stage cache for providing high reliability, availability, and serviceability (RAS). The multi-stage cache memory comprises a shadow DRAM, which is provided on a volatile main memory module, coupled to a memory controller cache, which is provided on a memory controller. During a first write operation, the memory controller writes data with a strong error correcting code (ECC) from the memory controller cache to the shadow DRAM without writing a RAID (Redundant Arrays of Inexpensive Disks) parity data. During a second write operation, the memory controller writes the data with the strong ECC and writes the RAID parity data from the shadow DRAM to a memory device provided on the volatile main memory module.

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.

Abstract: An integrated circuit includes an intellectual property core, scan data pipeline circuitry configured to convey scan data to the intellectual property core, and scan control pipeline circuitry configured to convey one or more scan control signals to the intellectual property core. The integrated circuit also includes a wave shaping circuit configured to detect a trigger event on the one or more scan control signals and, in response to detecting the trigger event, suppress a scan clock to the intellectual property core for a selected number of clock cycles.

Abstract: This document describes apparatuses and techniques for cache memory with randomized eviction. In various aspects, a cache memory randomly selects a cache line for eviction and/or replacement. The cache memory may also support multi-occupancy whereby the cache memory enters data reused from another cache line to replace the data of the randomly evicted cache line. By so doing, the cache memory may operate in a nondeterministic fashion, which may increase a probability of data remaining in the cache memory for subsequent requests.

Abstract: This document describes apparatuses and techniques for cache memory with randomized eviction. In various aspects, a cache memory randomly selects a cache line for eviction and/or replacement. The cache memory may also support multi-occupancy whereby the cache memory enters data reused from another cache line to replace the data of the randomly evicted cache line. By so doing, the cache memory may operate in a nondeterministic fashion, which may increase a probability of data remaining in the cache memory for subsequent requests.

Abstract: An integrated circuit (IC) can include a plurality of circuit blocks, wherein each circuit block includes design for testability (DFT) circuitry. The DFT circuitry can include a scan interface, wherein each scan interface is uniform with the scan interface of each other circuit block of the plurality of circuit blocks, an embedded deterministic test circuit coupled to the scan interface, wherein the embedded deterministic test circuit couples to circuitry under test, and a scan response analyzer coupled to the scan interface. The scan response analyzer is configured to operate in a selected scan response capture mode selected from a plurality of scan response capture modes. The IC can include a global scan router connected to the scan interfaces of the plurality of circuit blocks. The global scan router is configured to activate a subset of the plurality of circuit blocks in parallel for a scan test.

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

Abstract: In one example, an integrated circuit (IC) is provided that includes data circuitry and a processing circuitry. The data circuitry is configured to provide data to be transferred to a different circuitry within the IC or to an external IC. The processing circuitry is configured to: read the data provided by the data circuitry before it is transferred to the different circuitry or the external IC; calculate a first signature for the data; attach the first signature to the data; calculate, after transferring the data to the different circuitry or the external IC, a second signature for the data; extract the first signature corresponding to the data; compare the first signature to the second signature; and generate a signal based on a comparison of the first signature to the second signature.

Abstract: Circuits and methods involve an integrated circuit (IC) device, a plurality of application-specific sub-circuits, and a plurality of instances of a measuring circuit. The application-specific sub-circuits are disposed within respective areas of the IC device. Each instance of the measuring circuit is associated with one of the application-specific sub-circuits and is disposed within a respective one of the areas of the device. Each instance of the measuring circuit further includes a ring oscillator and a register for storage of a value indicative of an interval of time. Each instance of the measuring circuit is configured to measure passage of the interval of time based on a first clock signal, count oscillations of an output signal of the ring oscillator during the interval of time, and output a value indicating a number of oscillations counted during the interval of time.

Abstract: Methods, systems, and devices for adjustable programming pulses for a multi-level cell are described. A memory device may modify a characteristic of a programming pulse for an intermediate logic state based on a metric of reliability of associated memory cells. The modified characteristic may increase a read window and reverse a movement of a shifted threshold voltage distribution (e.g., by moving the threshold voltage distribution farther from one or more other voltage distributions). The metric of reliability may be determined by performing test writes may be a quantity of cycles of use for the memory cells, a bit error rate, and/or a quantity of reads of the first state. The information associated with the modified second pulse may be stored in fuses or memory cells, or may be implemented by a memory device controller or circuitry of the memory device.

Abstract: Systems, methods and apparatus to program a memory cell to have a threshold voltage to a level representative of one value among more than two predetermined values. A first voltage pulse is driven across the memory cell to cause a predetermined current to go through the memory cell. The first voltage pulse is sufficient to program the memory cell to a level representative of a first value. To program the memory cell to a level representative of a second value, a second voltage pulse, different from the first voltage pulse, is driven across the memory cell within a time period of residual poling in the memory cell caused by the first voltage pulse.

Abstract: Methods, systems, and devices for adjustable programming pulses for a multi-level cell are described. A memory device may modify a characteristic of a programming pulse for an intermediate logic state based on a metric of reliability of associated memory cells. The modified characteristic may increase a read window and reverse a movement of a shifted threshold voltage distribution (e.g., by moving the threshold voltage distribution farther from one or more other voltage distributions). The metric of reliability may be determined by performing test writes may be a quantity of cycles of use for the memory cells, a bit error rate, and/or a quantity of reads of the first state. The information associated with the modified second pulse may be stored in fuses or memory cells, or may be implemented by a memory device controller or circuitry of the memory device.

Abstract: A semiconductor device comprises a plurality of memory elements, test control circuitry, and a testing interface. The test control circuitry is configure to determine that one or more clock signals associated with the memory elements have been stopped and generate a scan clock signal based on the determination that the one or more clock signals have been stopped. The test control circuitry is further configured to communicate the scan clock signal to the memory elements. The testing interface is configured to communicate test data from the memory elements. In one example, the test data is delimited with start and end marker elements. The semiconductor device is mounted to a circuit board and is communicatively coupled to communication pins of the circuit board.

Abstract: Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.

Abstract: Embodiments herein describe a hardware based scrubbing scheme where correction logic is integrated with memory elements such that scrubbing is performed by hardware. The correction logic reads the data words stored in the memory element during idle cycles. If a correctable error is detected, the correction logic can then use a subsequent idle cycle to perform a write to correct the error (i.e., replace the corrupted data stored in the memory element with corrected data). By using built-in or integrated correction logic, the embodiments herein do not add extra work for the processor, or can work with applications that do not include a processor. Further, because the correction logic scrubs the memory during idle cycles, correcting bit errors does not have a negative impact on the performance of the memory element. Memory scrubbing can delay the degradation of data error, extending the integrity of the data in the memory.

Abstract: Methods, systems, and devices supporting a socket design for a memory device are described. A die may include one or more memory arrays, which each may include any number of word lines and any number of bit lines. The word lines and the bit lines may be oriented in different directions, and memory cells may be located at the intersections of word lines and bit lines. Sockets may couple the word lines and bit lines to associated drivers, and the sockets may be located such that memory cells farther from a corresponding word line socket are nearer a corresponding bit line socket, and vice versa. For example, sockets may be disposed in rows or regions that are parallel to one another, and which may be non-orthogonal to the corresponding word lines and bit lines.

Abstract: Methods, systems, and devices for electron beam probing techniques and related structures are described to enable inline testing of memory device structures. Conductive loops may be formed, some of which may be grounded and others of which may be electrically floating in accordance with a predetermined pattern. The loops may be scanned with an electron beam and image analysis techniques may be used to generate an optical pattern. The generated optical pattern may be compared to an expected optical pattern, which may be based on the predetermined pattern of grounded and floating loops. An electrical defect may be determined based on any difference between the generated optical pattern and the expected optical pattern. For example, if a second loop appears as having a brightness corresponding to a grounded loop, this may indicate that an unintended short exists. Fabrication techniques may be adjusted for subsequent devices to correct identified defects.