Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.

Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.

Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.

Abstract: Methods and apparatus are described for providing and operating an efficient infrastructure to implement a built-in clock stop and scan dump (CSSD) scheme for fabric blocks, such as block random access memory (BRAM), UltraRAM (URAM), digital signal processing (DSP) blocks, configurable logic elements (CLEs), and the like. This is a very useful feature for system debug and can also be applied for emulation use cases (e.g., FPGA emulation). This scheme can be applied to any tiled architecture that has highly repetitive blocks. The infrastructure may include a DFx controller shared across multiple tiled blocks with some distributed logic in each block, in an effort to minimize or at least reduce area overhead. The infrastructure may also minimize or at least reduce utilization of fabric resources in an effort to ensure the least perturbation of the original design, such that the design issues being debugged can be easily reproduced.

Abstract: A method and a probe device for testing an interposer prior to assembly are described herein. The method includes coupling a plurality of probe tips of a probe device to the plurality of signal interconnect paths of the interposer to be tested. A test signal is provided from the probe device to the plurality of signal interconnect paths of the interposer and a quality characteristic of signal interconnect paths of the interposer is detected based on behavior of the interposer in response to the test signal.

Abstract: An example method of manufacturing a semiconductor assembly includes: forming first integrated circuit (IC) dies and dummy dies; forming an interposer wafer including a top side having first mounting sites for the first IC dies and second mounting sites for second IC dies; attaching the first IC dies to the interposer wafer at the first mounting sites and the dummy dies to the interposer wafer at the second mounting sites; processing a backside and the top side of the interposer wafer; removing the dummy dies from the top side of the interposer wafer to expose the second mounting sites; and attaching the second IC dies to the interposer wafer at the exposed second mounting sites.

Abstract: A circuit for implementing a scan chain in an integrated circuit having a clock domain crossing is described. The circuit comprises a first dual-edge storage circuit configured to receive an input signal at a scan input and to receive a first clock signal in a first clock domain at a clock input; a storage element having a data input configured to receive an output of the first dual-edge storage circuit; a second dual-edge storage circuit configured to receive an output of the storage element at a scan input and to receive a second clock signal in a second clock domain at a clock input; and a pulse generator configured to provide, to a clock input of the storage element, a pulse signal having a pulse width selected to enable the second dual-edge storage element to store the output of the first dual-edge storage element.

Abstract: Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

Abstract: Techniques for providing a semiconductor assembly having an interconnect die for die-to-die interconnection, an IC package, a method for manufacturing, and a method for routing signals in an IC package are described. In one implementation, a semiconductor assembly is provided that includes a first interconnect die coupled to a first integrated circuit (IC) die and a second IC die by inter-die connections. The first interconnect die includes solid state circuitry that provides a signal transmission path between the IC dice.

Abstract: Methods and circuits for performing a clock-stop process of a circuit are disclosed. For example, a circuit includes a clock group having a first clock domain, a first clock multiplexer, a first synchronizer and a controller. The controller is configured to initiate a clock stop process of the circuit by sending an alternative mode signal to the first synchronizer. The first synchronizer is configured to synchronize the alternative mode signal to a clock of the first clock domain and is further configured to output, to a select line of the first clock multiplexer, the alternative mode signal that is synchronized to the clock of the first clock domain. The select line of the first clock multiplexer is for selecting from between an input of the first clock multiplexer for the clock of the first clock domain and an alternative clock input of the first clock multiplexer for an alternative clock signal from the controller.

Abstract: An integrated circuit enabling the communication of data is described. The integrated circuit comprises an input/output port; a plurality of data converter circuits; and programmable interconnect circuits coupled between the input/output port and the plurality of data converter circuits, the programmable interconnect circuits enabling a connection of the plurality of data converter circuits to the input/output port of the integrated circuit. A method of enabling the communication of data in an integrated circuit is also described.

Abstract: In an apparatus relating generally to an IC die, the IC die has a regulated power supply, a power supply grid, and a test circuit. The regulated power supply is biased between a source supply node and a source ground node, which are externally accessible nodes of the IC die. An internal supply node of the power supply grid is coupled to the regulated power supply. The test circuit is coupled to the internal supply node of the power supply grid. The test circuit is configured to test for at least one short in the power supply grid. The test circuit is configured to limit power through the power supply grid to less than that of a probe tip tolerance. The test circuit is configured to test for the at least one short in presence of background current leakage of the power supply grid.

Abstract: An apparatus relating generally to time-to-digital conversion is disclosed. In this apparatus, a time-to-digital converter is coupled to a period sensor. The period sensor includes a pulse generator to generate a pulse. An integrator of the period sensor is coupled to receive the pulse to generate an analog voltage signal responsive to the pulse. The time-to-digital converter includes an analog-to-digital converter coupled to provide a digital signal associated with the analog voltage signal.

Abstract: The embodiments herein relate to multi pattern searching and, more particularly, to multi pattern search or multi pattern matching using logic content processing. The input pattern is type cast to a Boolean alphabet and is then processed to create a corresponding signature set. Further, the signature set is divided into subsets and a Boolean logic function representing each signature subset is created. Further, the values of each subset are simultaneously compared with windows of an input data steam or data file to find a match. If a match is found, the system returns a hit, else a miss. Parallel stages may be added to enhance performance of the system, as multiple inputs may be processed at a time.

Abstract: A content delivery mechanism as a single object (also referred to as object bar) in a user interface. The object bar is a dynamic, context sensitive, adaptive multi-dimensional content delivery vehicle. The polymorphic nature of the object bar and the dynamic mechanism of delivering assistance content and controls (e.g., chat, videos, etc.) make it suitable for use in different application and customer scenarios. The object bar can be packed with N icons, in any order for any given context, with each icon designed to denote a specific dimension of information (a specific information type or intent type). The object bar can be docked on any side of the application view port and the user can chose to minimize it. When employed in an assistance environment for assistance content delivery and controls, a set of icons provides 360-degree perspective of the page.

Abstract: An integrated circuit device includes a plurality of functional tiles. Each functional tile may be configured into a scan chain. A clock generator is operable to generate an internal clock signal that is distributed to each of the functional tiles. A clock gater is associated with each of the functional tiles. Each clock gater is operable to receive an external enable signal and the internal clock signal, generate a scan clock signal for loading a test pattern into the scan chain based on the external enable signal and the internal clock signal, and generate at least one capture clock signal for capturing a response of the tile to the test pattern responsive to identifying the loading of the test pattern.

Abstract: An integrated circuit device includes a plurality of functional tiles. Each functional tile may be configured into a scan chain. A clock generator is operable to generate an internal clock signal that is distributed to each of the functional tiles. A clock gater is associated with each of the functional tiles. Each clock gater is operable to receive an external enable signal and the internal clock signal, generate a scan clock signal for loading a test pattern into the scan chain based on the external enable signal and the internal clock signal, and generate at least one capture clock signal for capturing a response of the tile to the test pattern responsive to identifying the loading of the test pattern.

Abstract: Disclosed are novel methods and apparatus for efficiently providing instruction-based BIST of memory interconnects. In an embodiment of the present invention, a method of testing a memory interconnect between an external memory module and a chip is disclosed. The method includes: providing an on-chip memory controller coupled to the external memory module, the on-chip memory controller sending and receiving data to and from the external memory module; providing an on-chip built-in self-test (BIST) module coupled to the on-chip memory controller, the BIST module including an instruction register to store a plurality of instructions; testing the external memory module; and once the external memory module has successfully passed the testing, utilizing the external memory module in testing the memory interconnect.

Abstract: A method generates and verifies a design-for-test (DFT) library for an automatic test pattern generator (ATPG) tool. The method includes (a) creating a synthesis library including primitives to be used to create the modules, the primitives being the same as primitives used by the ATPG tool, (b) creating a register transfer level (RTL) description for each module, (c) performing synthesis using the synthesis library and the RTL description to create a gate level description for each module, and (d) generating the DFT library by converting a hardware description language (HDL) of the gate level description into a script language for the ATPG tool to create a DFT file for each module. The method may further include (e) converting the DFT files into a RTL description to create a pseudo-RTL description for each module, and (f) comparing the RTL description and the pseudo-RTL description for verification of the DFT library.

Abstract: Disclosed are novel methods and apparatus for efficiently providing instruction-based BIST of external memory. In an embodiment, a built-in self-testing system is disclosed. The system includes an external memory module, an on-chip memory controller coupled to the external memory module, an on-chip built-in self-test (BIST) module coupled to the on-chip memory controller, and an interface controller coupled to the BIST module to provide an interface to access the BIST module. The on-chip memory controller may send and receive data to and from the external memory module. And, the BIST module may include an instruction register to store a plurality of instructions.