Patents by Inventor An-Cheng Chang

An-Cheng Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200371319
    Abstract: A camera system including a telephoto lens module is provided. The telephoto lens module includes a first image sensor, a first assembly, and a second assembly. The first assembly includes a first driving mechanism and a reflecting member connected to the first driving mechanism. The first driving mechanism is configured to drive the reflecting member to rotate around a first axis and a second axis. The second assembly is disposed between the first assembly and the first image sensor, including a second driving mechanism and a first lens. The second driving mechanism is configured to drive the first lens to move along a third axis. The first, second, and third axes are not parallel to each other. When light enters the telephoto lens along the first axis, light is reflected by the reflecting member and through the first lens along the third axis to the first image sensor.
    Type: Application
    Filed: August 14, 2020
    Publication date: November 26, 2020
    Inventors: Chao-Chang HU, Chen-Hsien FAN, Cheng-Kai YU, Chih-Wei WENG, Shu-Shan CHEN
  • Patent number: 10847373
    Abstract: A method includes forming a first dielectric layer over a semiconductor fin protruding from a substrate, forming a second dielectric layer over the first dielectric layer, then removing a portion of the semiconductor fin to form a first recess defined by portions of the first dielectric layer, followed by removing that portions of the first dielectric layer that define the first recess. Thereafter, the method proceeds to forming an epitaxial source/drain (S/D) feature in the first recess, removing the second dielectric layer to form a second recess that is disposed between the epitaxial S/D feature and remaining portions of the first dielectric layer, and subsequently forming a silicide layer over the epitaxial S/D feature, such that the silicide layer wraps around the epitaxial S/D feature.
    Type: Grant
    Filed: June 18, 2019
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hsiung Lin, Shih-Cheng Chen, Chih-Hao Wang, Jung-Hung Chang, Jui-Chien Huang
  • Patent number: 10847217
    Abstract: In one embodiment, a static random access memory (SRAM) device is provided. The SRAM device includes a memory cell, a bit line couple to the memory cell, a voltage supply line coupled to the memory cell, a control circuitry. The control circuitry is configured to charge a voltage supply line while the voltage supply line is electrically isolated from a bit line. A portion of the charge is transferred from the voltage supply line to the bit line. The voltage supply line is recharged while the voltage supply line is electrically isolated from the bit line storing the transferred portion of the charge. The memory cell is accessed using the recharge on the voltage supply line.
    Type: Grant
    Filed: July 22, 2019
    Date of Patent: November 24, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Mahmut Sinangil, Chiting Cheng, Hung-Jen Liao, Tsung-Yung Chang
  • Patent number: 10845571
    Abstract: An optical lens includes a first lens group and a second lens group arranged in order from a first side to a second side, and an aperture stop disposed between the first lens group and the second lens group. The optical lens satisfies the condition of LT/IMH<4.7, where IMH is semi-diagonal image height on an image plane, and LT is a distance along an optical axis between a surface of a first lens of the first lens group facing the first side and a surface of a last lens of the second lens group facing the second side. The first lens is closest to the first side among the first lens group, and the last lens is closest to the second side among the second lens group.
    Type: Grant
    Filed: June 15, 2018
    Date of Patent: November 24, 2020
    Assignee: RAYS OPTICS INC.
    Inventors: Ying-Hsiu Lin, Ching-Sheng Chang, Chen-Cheng Lee, Kuo-Chuan Wang
  • Patent number: 10845697
    Abstract: A transparent film is used with a projector which emits a projected light. The transparent film includes a transparent substrate; a light-scattering layer disposed at an upstream position of the transparent substrate with respect to the projected light, and including a plurality of microstructures configured to scatter the projected light; and a light-blocking layer disposed at an upstream position of the light-scattering layer with respect to the projected light, and including a plurality of separate light-blocking units, which are configured to partially block the projected light and partially allow the projected light to reach the light-scattering layer.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: November 24, 2020
    Assignee: BJ TEK CORPORATION
    Inventors: He-Yuan Jiang, Hsiu-Cheng Chang, Ching-Han Chang
  • Publication number: 20200367371
    Abstract: The application discloses an electronic device including a motherboard and a housing structure. The motherboard has a first surface and a second surface. The housing structure includes a first casing, a first cushion, a second casing, and a second cushion. The first casing has at least one first fixing member. The first cushion covers the first surface, is accommodated in the first casing and has at least one first through hole. The second casing has at least one second fixing member. The second cushion covers the second surface, is accommodated in the second casing and has at least one second through hole. A peripheral edge of the first cushion is attached to a peripheral edge of the second cushion, and the first fixing member may be fixed to the second fixing member through the first through hole and the second through hole.
    Type: Application
    Filed: April 6, 2020
    Publication date: November 19, 2020
    Inventors: Kuan-Ting LIN, Wen-Cheng TSAI, Jr-Hung HUANG, Danny SUN, Ho-Ching HUANG, Nien-Yu CHANG, Ming-Ke CHOU
  • Publication number: 20200365526
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a substrate having a first surface and a second surface opposite thereto, wherein the substrate includes a wiring structure, and a first semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure. The package further includes a second semiconductor die disposed over the first surface of the substrate and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are separated by a molding material. A first hole and a second hole are formed on the second surface of the substrate. Finally, a frame is disposed over the first surface of the substrate, wherein the frame surrounds the first semiconductor die and the second semiconductor die.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Inventors: Tzu-Hung LIN, Chia-Cheng CHANG, I-Hsuan PENG, Nai-Wei LIU
  • Publication number: 20200363674
    Abstract: A device housing includes a front face, a rear face and a bent side face connecting the front face with the rear face, and the rear face includes a reserved region and an assembling region connected with the reserved region. The flexible screen component covers the front face, the bent side face and the assembling region, and has a display region and an extending layer protruding from the display region. Two ends of the display region are assembled and fitted with two sides of the reserved region, respectively. The retractable device is assembled in the device housing, and connected with the extending layer.
    Type: Application
    Filed: November 24, 2019
    Publication date: November 19, 2020
    Applicant: BEIJING XIAOMI MOBILE SOFTWARE CO., LTD.
    Inventor: Cheng CHANG
  • Patent number: 10840660
    Abstract: The present invention relates to an electronic device and an antenna connector. The electronic device includes a first unit, a transmission dock, a base, and an antenna connector. The transmission dock is pivotally provided at the first unit. The base is movably provided at the transmission dock, and includes a top plate and a bottom plate that are mutually fixed. The antenna connector is movably provided at the base, and includes a housing, an installation flange, a central moving terminal and an elastic member. The central moving terminal is located in the housing. The installation flange is radially formed outside the housing, and is located between the top plate and the bottom plate and abuts against the top plate. The elastic member is clamped between the installation flange and the bottom plate.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: November 17, 2020
    Assignee: Getac Technology Corporation
    Inventors: Wan-Lin Hsu, Juei-Chi Chang, Kun-Cheng Lee
  • Patent number: 10840182
    Abstract: The present invention provides a method of forming a semiconductor device. First, a substrate is provided and an STI is forming in the substrate to define a plurality of active regions. Then a first etching process is performed to form a bit line contact opening, which is corresponding to one of the active regions. A second etching process is performed to remove a part of the active region and its adjacent STI so a top surface of active region is higher than a top surface of the STI. Next, a bit line contact is formed in the opening. The present invention further provides a semiconductor structure.
    Type: Grant
    Filed: November 12, 2018
    Date of Patent: November 17, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Shih-Fang Tzou, Yu-Cheng Tung, Fu-Che Lee, Ming-Feng Kuo
  • Patent number: 10840242
    Abstract: A method includes, in a first etching step, etching a semiconductor substrate to form first recesses in a first device region and second recesses in a second device regions simultaneously. A first semiconductor strip is formed between the first recesses. A second semiconductor strip is formed between the second recesses. In a second etching step, the semiconductor substrate in the second device region is etched to extend the second recesses. The first recesses and the second recesses are filled with a dielectric material to form first and second isolation regions in the first and second recesses, respectively. The first isolation regions and the second isolation regions are recessed. Portions of the semiconductor substrate in the first and the second device regions protrude higher than top surfaces of the respective first and second isolation regions to form a first and a second semiconductor fin, respectively.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
  • Patent number: 10840144
    Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate and a gate stack covering a portion of the fin structure. The gate stack includes a gate dielectric layer, a work function layer, and a conductive filling over the work function layer. The semiconductor device structure also includes a dielectric layer covering the fin structure. The dielectric layer is in direct contact with the conductive filling.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Cheng Chang, Chih-Han Lin
  • Patent number: 10840401
    Abstract: The present invention provides a method for improving power generation efficiency of a solar cell, comprising: providing a synergistic structure for allowing the solar cell to receive light through thereof, wherein the synergistic structure is a three-dimensional structure; the three-dimensional structure has a surface area that is larger than a surface area of the solar cell, a refractive index of substances that used to construct the three-dimensional structure is higher than a refractive index of environmental substances around the solar cell, and improving an interface condition of the solar cell could increase light introduced into the solar cell and improving power generation efficiency of the solar cell.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: November 17, 2020
    Inventor: Chung-Cheng Chang
  • Patent number: 10840379
    Abstract: A device includes a semiconductive fin, a first gate stack, a second gate stack, an insulating structure, and a spacer. The semiconductive fin extends along a first direction. The first gate stack extends along a second direction and across the semiconductive fin. The first gate stack includes a high-? dielectric layer and a gate electrode. The high-? dielectric layer is over the semiconductive fin. The gate electrode is over the high-? dielectric layer. The second gate stack extends along the second direction and is substantially aligned with the first gate stack along the second direction. The insulating structure is between the first gate stack and the second gate stack. The high-? dielectric layer is spaced apart from the insulating structure. The spacer extends along a sidewall of the first gate stack and beyond a first sidewall of the insulating structure that faces the first gate stack.
    Type: Grant
    Filed: December 16, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Che-Cheng Chang, Chih-Han Lin
  • Patent number: 10840378
    Abstract: A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and an isolation structure formed on the substrate. The FinFET structure also includes a fin structure extending above the substrate, and the fin structure is embedded in the isolation structure. The FinFET structure further includes an epitaxial structure formed on the fin structure, the epitaxial structure has a pentagon-like shape, and an interface between the epitaxial structure and the fin structure is lower than a top surface of the isolation structure.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Zhe-Hao Zhang, Tung-Wen Cheng, Chang-Yin Chen, Che-Cheng Chang, Yung-Jung Chang
  • Patent number: 10839671
    Abstract: A method of and apparatus for wirelessly collecting and transmitting environmental condition information received from one or more environmental monitoring sensors located in and around a property of homes, buildings or structures. The environmental monitoring sensors communicates the conditions to a Property Management Communication Hub (e.g., a signal hub) The systems, apparatuses, and methods are Self-Contained Property Management System (‘SCPMS’) In one embodiment, a property management method is performed/executed by one or more algorithm implemented processor within the Property Management Communication Hub. The method comprises receiving an encoded event alert from a wireless sensor, encoding the event information, and transmitting the encoded event information to a remote location by a communication module configured to communicate using a wireless communication method.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: November 17, 2020
    Assignee: INSTANT CARE, INC.
    Inventors: Richard Allen Darling, Fong-Min Chang, Chih-Cheng Tai
  • Patent number: 10840381
    Abstract: A semiconductor device that includes a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer includes a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of at least two suspended channel structures. The inner spacer may be composed of an n-type or p-type doped glass.
    Type: Grant
    Filed: August 10, 2016
    Date of Patent: November 17, 2020
    Assignee: International Business Machines Corporation
    Inventors: Josephine B. Chang, Kangguo Cheng, Michael A. Guillorn, Xin Miao
  • Patent number: 10840134
    Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for surrounding dielectric layers. The insert layer may be applied between two dielectric layers. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Cheng Chou, Chih-Chien Chi, Chung-Chi Ko, Yao-Jen Chang, Chen-Yuan Kao, Kai-Shiang Kuo, Po-Cheng Shih, Tze-Liang Lee, Jun-yi Ruan
  • Patent number: D902981
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: November 24, 2020
    Assignee: TDK TAIWAN CORP.
    Inventors: Fu-Yuan Wu, Kun-Shih Lin, Shang-Yu Hsu, Yi-Ho Chen, Shih-Ting Huang, Shou-Jen Liu, Chien-Lun Huang, Yi-Hsin Nieh, Chen-Chi Kuo, Chia-Pin Hsu, Yu-Huai Liao, Shin-Hua Chen, Yu-Cheng Lin, Shao-Chung Chang, Kuo-Chun Kao, Chia-Hsiu Liu, Chao-Chun Chang, Yuan-Shih Liao
  • Patent number: D902982
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: November 24, 2020
    Assignee: TDK TAIWAN CORP.
    Inventors: Fu-Yuan Wu, Kun-Shih Lin, Shang-Yu Hsu, Yi-Ho Chen, Shih-Ting Huang, Shou-Jen Liu, Chien-Lun Huang, Yi-Hsin Nieh, Chen-Chi Kuo, Chia-Pin Hsu, Yu-Huai Liao, Shin-Hua Chen, Yu-Cheng Lin, Shao-Chung Chang, Kuo-Chun Kao, Chia-Hsiu Liu, Chao-Chun Chang, Yuan-Shih Liao