Abstract: One aspect of this description relates to a memory array. The memory array includes a plurality of N-stack pass gates, a plurality of enable lines, a plurality of NMOS stacks, a plurality of word lines, and a matrix of resistive elements. Each N-stack pass gate includes a stage-1 PMOS core device and a stage-N PMOS core device in series. Each stage-1 PMOS is coupled to a voltage supply. Each enable line drives a stack pass gate. Each N-stack selector includes a plurality of NMOS stacks. Each NMOS stack includes a stage-1 NMOS core device and a stage-N N MOS core device in series. Each stage-1 NMOS core device is coupled to a ground rail. Each word line is driving a stack selector. Each resistive element is coupled between a stack pass gate and a stack selector. Each voltage supply is greater than a breakdown voltage for each of the core devices.

Abstract: A power supply with lightning protection includes a surge voltage suppression apparatus, an electromagnetic interference control circuit, a surge current bypass apparatus, an active bridge rectifier circuit, a power factor correction circuit, and a DC-to-DC conversion circuit. The surge voltage suppression apparatus is used to increase a tolerance of a surge voltage for the power supply. The electromagnetic interference control circuit is coupled to the surge voltage suppression apparatus. The surge current bypass apparatus is used to increase a tolerance of a surge current for the power supply. The active bridge rectifier circuit is used to rectify an input voltage. The power factor correction circuit is used to adjust the rectified input voltage to provide an adjusted input voltage on a bulk capacitor. The DC-to-DC conversion circuit is used to convert the adjusted input voltage into a DC output voltage.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal filling over the work function layer. The semiconductor device structure further includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal filling.

Abstract: An image sensor includes a substrate and a first photodiode (PD) having a first size in the substrate. The image sensor further includes a second PD having a second size in the substrate, wherein the first size is different from the second size. The image sensor further includes a first buffer layer over the substrate. The image sensor further includes a shield layer over the first buffer, wherein the first buffer layer and the shield layer define a first recess aligned with the first PD and a second recess aligned with the second PD. The image sensor further includes a flicker reduction layer in the first recess, wherein the second recess is free of the flicker reduction layer.

Abstract: A switchable two-stage coalescence separation system, including a coalescer housing (1), a plurality of two-stage filter elements (2), and a particle detector (5). A lower portion and an upper portion of each of the two-stage filter elements (2) are located in a lower chamber (101) and an upper chamber (102) of the coalescer housing (1), respectively. Two gas inlet branch pipes are communicated with the lower chamber (101) and the upper chamber (102), respectively and are connected to a gas inlet main pipe (8) through a first multi-way valve (6). The particle detector (5) is disposed on the gas inlet main pipe (8). Two outlet branch pipes are communicated with the lower chamber (101) and the upper chamber (102), respectively and are connected to a gas outlet main pipe 13 through a second multi-way valve (7).

Abstract: In one embodiment, a computing system may access first alpha values associated with first pixels in a first pixel region of an image and determine a bit budget for encoding the first alpha values. The computing system may then select a first alpha-encoding mode for the first alpha values to reflect a determination that the first alpha values are all fully transparent or all fully opaque, and encode the first alpha values by storing the selected first alpha-encoding mode as part of a metadata without using the bit budget to encode the first alpha values individually. The computing system may then update a record of unallocated bits available for allocation based on the bit budget unused in the encoding of the first alpha values, and allocate, based on the record of unallocated bits, bits to encode a set of alpha values different from the first alpha values.

Abstract: A representative method for manufacturing fin field-effect transistors (FinFETs) includes steps of forming a plurality of fin structures over a substrate, and forming a plurality of isolation structures interposed between adjacent pairs of fin structures. Upper portions of the fin and isolation structures are etched. Epitaxial structures are formed over respective fin structures, with each of the epitaxial structures adjoining adjacent epitaxial structures. A dielectric layer is deposited over the plurality of epitaxial structures with void regions formed in the dielectric layer. The void regions are interposed between adjacent pairs of fin structures.

Abstract: In a method and device for extracting joint line of shoe, a contact end of a contouring tool is provided to contact a joint contour of a shoe sample, an encoder is provided to generate a plurality of first trajectory coordinate signals of the contact end while the contact end is moved along the joint contour, and a signal processor is provided to receive the first trajectory coordinate signals to create a digital joint line.

Abstract: An image sensor device includes a substrate, a deep-trench isolation structure, a buffer layer, and a light blocking structure. The substrate has a photosensitive region. The deep-trench isolation structure is in the substrate and adjacent the photosensitive region. The buffer layer is over the photosensitive region and the deep-trench isolation structure. The light blocking structure is over the buffer layer. A bottom portion of the light blocking structure is embedded in the buffer layer.

Abstract: A coalescing filter element (300) with double drainage layers, including an inner coalescing component (1) configured to captured a large amount of liquid in gas, and an outer coalescing component (2) configured to coalesce and filter a small amount of liquid remaining in the gas. The inner coalescing component (1) and the outer coalescing component (2) are cylindrical structures disposed in a vertical direction and opened at two ends. The outer coalescing component (2) is sleeved on an outer side of the inner coalescing component (1), and an annular drainage space (3) is formed between the inner coalescing component (1) and the outer coalescing component (2). A top end cap (4) is provided on top ends of the inner coalescing component (1) and the outer coalescing component (2). A bottom end cap (5) is provided on bottom ends of the inner coalescing component (1) and the outer coalescing component (2).

Abstract: The invention provides a photoelectric energy conversion device applied to a power conversion circuit to replace a magnetic component which is widely used in a power conversion circuit. The photoelectric energy conversion device includes a shell, at least one light generator, and at least one photovoltaic generator, wherein the at least one light generator and the at least one photovoltaic generator are packaged in the shell. The at least one photovoltaic generator receives light generated in the shell by the at least one light generator and generates electric energy based on the light, and the at least one photovoltaic generator serves as a power supply source for a back-end circuit of the photoelectric energy conversion device.

Abstract: A high-temperature flow-splitting component, applicable to a temperature range from a first temperature to a second temperature, includes an entrance channel, at least one primary channel and at least one subordinate channel. The entrance channel is used for introducing a fluid at a total flow rate. The at least one primary channel for introducing the fluid from the entrance channel at a first flow rate is connected with the entrance channel by a first angle ranging from 90°˜270°. The at least one subordinate channel for introducing the fluid from the entrance channel at a second flow rate is connected with the at least one primary channel by a second angle ranging from 30°˜150°. A sum of the first flow rate and the second flow rate is equal to the total flow rate.

Abstract: A temperature-controlled tramp metal separation assembly includes a core rod and a magnetic set. The core rod is made of non-magnetic materials and includes a chamber, a first end with an air inlet, and a second end with an air outlet. The magnetic set includes a plurality of magnetic members and a plurality of spacers respectively disposed between the two adjacent magnetic members. The magnetic set is nested in the chamber in a way that an air path is formed therein so that an external cooling air flow can be introduced from the air inlet, and then discharged from the air outlet via the air path. Thus, the operating temperature of the tramp metal separating process can be maintained at an acceptable level, preventing the magnetic force of the magnet set from being reduced.

Abstract: A semiconductor device includes a substrate, a fin protruding from the substrate, and a gate stack over the substrate and engaging the fin. The fin having a first end and a second end. The semiconductor device also includes a dielectric layer abutting the first end of the fin and spacer features disposed on sidewalls of the gate stack and on a top surface of the dielectric layer.

Abstract: The present invention provides a method for manufacturing a cushion body with a concave-convex structure and a mold for manufacturing the cushion body with the concave-convex structure. A first elastic sheet is pasted on a second elastic sheet. The first elastic sheet is a closed-hole elastic material. The second elastic sheet is an opened-hole elastic material. The first elastic sheet and the second elastic sheets are combined and heated. Finally, the first elastic sheet and the second elastic sheet that are heated are sucked using the mold under a negative pressure from one side of the second elastic sheet and cooled at the same time, so that the first elastic sheet and the second elastic sheet can be deformed using the concave-convex structure of the mold and cooled to be shaped, thereby obtaining the cushion body with the concave-convex structure.

Abstract: A method of learning speech emotion recognition is disclosed, and includes receiving and storing raw speech data, performing pre-processing to the raw speech data to generate pre-processed speech data, receiving and storing a plurality of emotion labels, performing processing to the pre-processed speech data according to the plurality of emotion labels to generate processed speech data, inputting the processed speech data to a pre-trained model to generate a plurality of speech embeddings, and training an emotion recognition module according to the plurality of emotion labels and the plurality of speech embeddings.

Abstract: A device for separating tramp metals from liquid raw materials includes a body unit, a holding unit, a magnetic unit, a rinsing unit, and a driving unit. The body unit includes a tank for feeding-in and feeding-out liquid raw materials. The holding unit is coupled to the tank and includes and a plurality of non-magnetic holders received in the tank. The magnetic unit is mounted on the tank and includes an enclosure haying a telescopic wall to be in a compressed or extended state. The rinsing unit is fixed on the interior of the tank to rinse the non-magnetic holders. The driving unit is coupled the tank and the magnetic unit for driving the magnet unit moving between a first and second positions. An assembly is assembled from the device. And a method is carried out by the device or the assembly.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.

Abstract: A semiconductor package structure includes a substrate having a substrate having a first surface and second surface opposite thereto, wherein the substrate comprises a wiring structure. The structure also has a first semiconductor die disposed on the first surface of the substrate and electrically coupled to the wiring structure, and a second semiconductor die disposed on the first surface and electrically coupled to the wiring structure, wherein the first semiconductor die and the second semiconductor die are arranged in a side-by-side manner. A molding material surrounds the first semiconductor die and the second semiconductor die, wherein the first semiconductor die is separated from the second semiconductor die by the molding material. Finally, an annular frame mounted on the first surface of the substrate, wherein the annular frame surrounds the first semiconductor die and the second semiconductor die.

Abstract: A resource allocation method and a resource allocation system are provided. The resource allocation method includes the following steps. Quality parameters of each of a plurality of resource blocks are obtained through measurement devices, and first and second application scenario suitability indices for each of the resource blocks are calculated according to the quality parameters. A first ranking sequence and a second ranking sequence of the resource blocks are generated according to the first application scenario suitability index and the second application scenario suitability of each resource block. A base station is configured to allocate, according to the first ranking sequence and the second ranking sequence, at least one first resource block and at least one second resource block of the resource blocks to at least one first user equipment in a first application scenario and at least one second user equipment in a second application scenario, respectively.