Abstract: A medical device includes an outer tube, an operation portion at least partially located in the outer tube and a control portion having a channel communicated with the outer tube along the first direction. The second end of the control portion is coupled with the first end of the outer tube, so that the channel and the outer tube are communicated with each other along the first direction. The control portion includes a control module including a suction control unit having a stopping unit and configured to move along a second direction which is different form the first direction, a suction port actuator located at a side opposite to the suction control unit with the channel therebetween and a switching unit configured to switch the work status of the operation portion. The suction port actuator is configured to be activated by the suction control unit.

Abstract: A smoke generator includes an oil tank receiving an oil to be pumped by an oil pump to a vaporization tube where the oil vaporized into smoke after heating by a heater. A pre-pressurization oil supply device is disposed between the vaporization tube and the oil pump. When the pre-pressurization oil supply device is in a non-supply state not intercommunicating with the vaporization tube, the pre-pressurization oil supply device maintains its internal pressure, and the oil in the pre-pressurization oil supply device is not delivered to the vaporization tube. When the pre-pressurization oil supply device is in an oil supply state, the pre-pressurization oil supply device intercommunicates with the vaporization tube, and the oil in the pre-pressurization oil supply device is rapidly delivered to the vaporization tube.

Abstract: In some embodiments, a field effect transistor (FET) structure comprises a body structure, dielectric structures, a gate structure and a source or drain region. The gate structure is formed over the body structure. The source or drain region is embedded in the body structure beside the gate structure, and abuts and is extended beyond the dielectric structure. The source or drain region contains stressor material with a lattice constant different from that of the body structure. The source or drain region comprises a first region formed above a first level at a top of the dielectric structures and a second region that comprises downward tapered side walls formed under the first level and abutting the corresponding dielectric structures.

Abstract: A pair of plumbing pliers includes two levers, a pawl and a torque spring. After adjusting the desired bite size according to a diameter of a pipe, the levers are pivoted relative to each other in a first range to clamp and release the pipe repeatedly to rotate the pipe. To adjust a bite size of the pair of plumbing pliers according to a diameter of another pipe, the levers are pivoted and then moved relative to each other in a second range. Little resistance is encountered in the first range. However, considerable resistance is encountered in the second range. Hence, the difference between the first and second ranges can easily be felt. Accordingly, it is not likely that a user will, by mistake, enter the second range, i.e., increase the bite size of the pair of plumbing pliers.

Abstract: A portable body surface air cooling method and a device thereof are disclosed. A portable air compression and heat dissipation set at least composed of an air compression unit, an air heat dissipation passage set and a power unit. The device compresses air with normal temperature in an environment to form compressed air, transfers the compressed air through a transfer passage, dissipates the heat of the compressed air and lowers the temperature of the compressed air in the transfer process, making the compressed air with lowered temperature continuously self-expand to reduce the pressure and lower the temperature in the transfer passage, guiding the compressed air to a terminal expansion spraying/spreading position, The compressed air is directly sprayed to the body surface of the user to spread hot air layer and perform the processes of final expansion, heat absorption and temperature lowering. Accordingly, double cooling effects are achieved.

Abstract: A head-mounted display includes a display device, a connecting structure and a head abutting portion. The connecting structure is in a shape of strip. The connecting structure has two opposite ends. The ends are respectively connected with the display device. The connecting structure and the display device define an accommodation space. The accommodation space is configured to accommodate a head of a user. The head abutting portion is pivotally connected with the connecting structure. The head abutting portion is at least partially located between the connecting structure and the display device. The head abutting portion is configured to abut against the head of the user.

Abstract: According to an example aspect of the present invention, there is provided a Coulomb blockade thermometer, comprising a Coulomb blockade thermometer sensor element, a radio-frequency generator configured to feed a radio-frequency signal to a first port of the Coulomb blockade thermometer, and a radio-frequency sensor configured to measure a response of the Coulomb blockade thermometer to the radio-frequency signal from a second port of the Coulomb blockade thermometer to perform a conductance measurement of the Coulomb blockade thermometer, and a bias voltage generator configured to sweep through a bias voltage range during the conductance measurement, performed using the radio-frequency generator, of the Coulomb blockade thermometer.

Abstract: A head-mounted display includes a face-abutting frame, a first adjustable structure, a second adjustable structure and a display module. The face-abutting frame has a first side and a second side opposite to each other. The first side abuts against a face of a user. The face-abutting frame defines a space corresponding to eyes of the user. The first adjustable structure connects with the second side. The second adjustable structure connects with the second side and defines the space with the first adjustable structure. The second adjustable structure movably and mechanically connects with the first adjustable structure. The display module corresponds to the space and movably and mechanically connects with the first adjustable structure. The first and the second adjustable structures can move close to or away from each other. The display module and the first adjustable structure can move close to or away from each other.

Abstract: A power supply with lightning protection includes a surge voltage suppression apparatus, an electromagnetic interference control circuit, a surge current bypass apparatus, an active bridge rectifier circuit, a power factor correction circuit, and a DC-to-DC conversion circuit. The surge voltage suppression apparatus is used to increase a tolerance of a surge voltage for the power supply. The electromagnetic interference control circuit is coupled to the surge voltage suppression apparatus. The surge current bypass apparatus is used to increase a tolerance of a surge current for the power supply. The active bridge rectifier circuit is used to rectify an input voltage. The power factor correction circuit is used to adjust the rectified input voltage to provide an adjusted input voltage on a bulk capacitor. The DC-to-DC conversion circuit is used to convert the adjusted input voltage into a DC output voltage.

Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a first metal layer formed over a substrate and a dielectric layer formed over the first metal layer. The semiconductor device structure further includes an adhesion layer formed in the dielectric layer and over the first metal layer and a second metal layer formed in the dielectric layer. The second metal layer is electrically connected to the first metal layer, and a portion of the adhesion layer is formed between the second metal layer and the dielectric layer. The adhesion layer includes a first portion lining with a top portion of the second metal layer, and the first portion has an extending portion along a vertical direction.

Abstract: A semiconductor device and method of manufacture are provided. A source/drain region is formed next to a spacer, which is adjacent to a gate electrode. An implantation is performed through an implantation mask into the source/drain region as well as the first spacer, forming an implantation region within the spacer.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.

Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure.

Abstract: A magnetically attracted fan set comprises N+1 fans, the N?1, and each of the N+1 fans has a fan frame and an airflow generating component disposed on the fan frame. Any two adjacent fans of the N+1 fans respectively have a joint surface, each of the joint surfaces has at least one fixing member capable of forming magnetic attraction, when the joint surface is close to the other joint surface at a distance sufficient for the two fixing members on the two joint surfaces to form magnetic attraction, two of the N+1 fans are joined together. Accordingly, the invention is capable of directly and quickly joining the N+1 fans without requiring complicated assembly gestures or other external components.

Abstract: A device includes first and second wires, resistors, and a processor. Input signals are transmitted from the first wires through the resistors to the second wires. The processor receives a sum value of the input signals from one of the second wires, and shifts the sum value by a nonlinear activation function to generate a shifted sum value. The processor calculates a backpropagation value based on the shifted sum value and a target value related to a corresponding input signal of the input signals, and generates a pulse number based on the corresponding input signal of the input signal and the backpropagation value. The processor applies a voltage pulse to one of the resistors related to the corresponding input signal based on the pulse number, in order to modify a value of the corresponding input signal in the input signals to be the same as the target value.

Abstract: A semiconductor device is provided. The semiconductor device includes a gate stack over a semiconductor substrate. The gate stack has a conductive structure and a gate dielectric layer, and a top of the gate dielectric layer is higher than a top of the conductive structure. The semiconductor device also includes a protection element over the gate stack. The semiconductor device further includes a spacer extending along a side surface of the protection element and a sidewall of the gate stack.

Abstract: A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.