Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.

Abstract: A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.

Abstract: A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductor, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductor is electrically connected to the source drain structure. The protection layer is present between the conductor and the first spacer and on a top surface of the first gate structure.

Abstract: A magnetically attracted fan set comprises N+1 fans, the N?1, and each of the N+1 fans has a fan frame and an airflow generating component disposed on the fan frame. Any two adjacent fans of the N+1 fans respectively have a joint surface, each of the joint surfaces has at least one fixing member capable of forming magnetic attraction, when the joint surface is close to the other joint surface at a distance sufficient for the two fixing members on the two joint surfaces to form magnetic attraction, two of the N+1 fans are joined together. Accordingly, the invention is capable of directly and quickly joining the N+1 fans without requiring complicated assembly gestures or other external components.

Abstract: A device includes first and second wires, resistors, and a processor. Input signals are transmitted from the first wires through the resistors to the second wires. The processor receives a sum value of the input signals from one of the second wires, and shifts the sum value by a nonlinear activation function to generate a shifted sum value. The processor calculates a backpropagation value based on the shifted sum value and a target value related to a corresponding input signal of the input signals, and generates a pulse number based on the corresponding input signal of the input signal and the backpropagation value. The processor applies a voltage pulse to one of the resistors related to the corresponding input signal based on the pulse number, in order to modify a value of the corresponding input signal in the input signals to be the same as the target value.

Abstract: A semiconductor device is provided. The semiconductor device includes a gate stack over a semiconductor substrate. The gate stack has a conductive structure and a gate dielectric layer, and a top of the gate dielectric layer is higher than a top of the conductive structure. The semiconductor device also includes a protection element over the gate stack. The semiconductor device further includes a spacer extending along a side surface of the protection element and a sidewall of the gate stack.

Abstract: A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.

Abstract: A projection type transparent display includes a polarization modulator and a reflective layer. The polarization modulator is stacked in sequence by a linear polarizer, a liquid crystal layer and a phase retarder. The reflective layer is stacked on the phase retarder. A projection light is incident on the linear polarizer to form a linearly polarized light. The liquid crystal layer changes a polarization direction of the linearly polarized light. Two kinds of linearly polarized projection lights with polarization directions orthogonal to each other are respectively formed and pass through the phase retarder to respectively form two kinds of circularly polarized projection lights with opposite rotation directions. A background light is incident on the reflective layer.

Abstract: A controllable and stable sinking/floating system for cage aquaculture is illustrated, which has a net cage and the sinking/floating units. The net cage comprises a frame and a net body installed on the frame. The sinking/floating units are installed on the frame, each of the sinking/floating units comprises a water storage chamber and a liquid flow controller, the water storage chamber has an inlet and an outlet, and the liquid flow controller controls water to flow out via the outlet from the water storage chamber or to flow into the water storage chamber via the inlet. When the water flows out via the outlet from the water storage chamber, the sinking/floating unit floats; and when the water flows into the water storage chamber via the inlet, the sinking/floating unit sinks.

Abstract: A depth wire-controlled aquaculture device, having a net cage, float balls, a depth sensor and at least one wire control module, is illustrated. The net cage has a frame and a net body. The float balls are connected to the net cage. The depth sensor is installed on the net cage and detects an underwater depth of the net cage to generate a depth signal. The wire control module comprises a controller, a reel, a driver and a connection wire. The connection wire is connected to the net cage and wound around the reel, the controller is signally connected the depth sensor and the driver, the depth signal is transmitted to the controller, the controller controls the driver according to the depth signal, and the driver drives the reel to rotate to draw or release the connection wire, so as to change the underwater depth of the net cage.

Abstract: A drug injection device contains a needle holder, an ejector, a needle member, and an actuation assembly. The needle holder defines a drug delivery direction extending toward the injection end. The ejector contains a fixing segment that is fixed to the needle holder and located in the drug delivery direction, and the abutting segment extending toward the injection end and protruding beyond the needle holder. The needle member is movably arranged relative to the needle holder and contains a needle shaft connected to a needle hub coaxially arranged with the ejector for the abutting segment inserting into the needle shaft. The actuator assembly connects the needle holder and the needle shaft for driving the needle member between a first position and a second position with respect to the needle holder.

Abstract: A Fin FET semiconductor device includes a fin structure extending in a first direction and extending from an isolation insulating layer. The Fin FET device also includes a gate stack including a gate electrode layer, a gate dielectric layer, side wall insulating layers disposed at both sides of the gate electrode layer, and interlayer dielectric layers disposed at both sides of the side wall insulating layers. The gate stack is disposed over the isolation insulating layer, covers a portion of the fin structure, and extends in a second direction perpendicular to the first direction. A recess is formed in an upper surface of the isolation insulating layer not covered by the side wall insulating layers and the interlayer dielectric layers. At least part of the gate electrode layer and the gate dielectric layer fill the recess.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first contact is formed to a source/drain region and a dielectric layer is formed over the first contact. An opening is formed to expose the first contact, and the opening is lined with a dielectric material. A second contact is formed in electrical contact with the first contact through the dielectric material.

Abstract: In one embodiment, one or more computing systems may determine a first display content to be displayed on a display. The first display content may be associated with one or more frames. The one or more computing systems may determine an optimization operation for the first display content based on one or more first parameters associated with the display or one or more second parameters associated with the one or more frames. The one or more computing systems may adjust the one or more frames based on the optimization operation. The adjusted one or more frames may have at least one optimized attribute comparing to the one or more frames before being adjusted. The one or more computing systems may output the adjusted one or more frames to the display to represent the first display content.

Abstract: An integrated circuit includes a substrate, at least one n-type semiconductor device, and at least one p-type semiconductor device. The n-type semiconductor device is present on the substrate. The n-type semiconductor device includes a gate structure having a bottom surface and at least one sidewall. The bottom surface of the gate structure of the n-type semiconductor device and the sidewall of the gate structure of the n-type semiconductor device intersect to form an interior angle. The p-type semiconductor device is present on the substrate. The p-type semiconductor device includes a gate structure having a bottom surface and at least one sidewall. The bottom surface of the gate structure of the p-type semiconductor device and the sidewall of the gate structure of the p-type semiconductor device intersect to form an interior angle smaller than the interior angle of the gate structure of the n-type semiconductor device.

Abstract: A memory circuit includes a plurality of bitcells coupled to a plurality of bitlines, a plurality of wordlines, a plurality of source lines, and a control line. A first of the bitcells and a second of the bitcells are coupled to a first of the bitlines. The first bitcell is coupled to a first of the source lines. The second bitcell is coupled to a second of the source lines. The first source line is different from the second source line.

Abstract: A device includes a substrate, a shallow trench isolation (STI) structure, an isolation structure, and a gate stack. The substrate has a semiconductor fin. The shallow trench isolation (STI) structure is over the substrate and laterally surrounding the semiconductor fin. The isolation structure is disposed on a top surface of the STI structure. The gate stack crosses the semiconductor fin, over the STI structure, and in contact with a sidewall the isolation structure, in which the gate stack includes a high-k dielectric layer extending from a sidewall of the semiconductor fin to the top surface of the STI structure and terminating prior to reaching the sidewall of the isolation structure, and the high-k dielectric layer is in contact with the top surface of the STI structure. The gate stack includes a gate electrode over the high-k dielectric layer and in contact with the sidewall of the isolation structure.

Abstract: A system and method of predicting a user's most meaningful multimedia content includes enabling a sensing device on a user device in response to a user requesting a multimedia operation, performing the multimedia operation for a multimedia content, in response to the multimedia operation, identifying behavioral and interaction cues of the user with the sensing device substantially when the multimedia operation is being performed, updating a recommendation from a set of multimedia content including the multimedia content represented by the behavioral and interaction cues identified, and presenting the updated recommendation to the user.

Abstract: A projection type transparent display includes a polarization modulator and a reflective layer. The polarization modulator is stacked in sequence by a linear polarizer, a liquid crystal layer and a phase retarder. The reflective layer is stacked on the phase retarder. A projection light is incident on the linear polarizer to form a linearly polarized light. The liquid crystal layer changes a polarization direction of the linearly polarized light. Two kinds of linearly polarized projection lights with polarization directions orthogonal to each other are respectively formed and pass through the phase retarder to respectively form two kinds of circularly polarized projection lights with opposite rotation directions. A background light is incident on the reflective layer.