Abstract: A memory device includes a plurality of memory blocks, and a control circuit. A selected memory block of the plurality of memory blocks comprises a top select gate, a bottom select gate, a plurality of word lines, a common-source line, and a P-well. The control circuit performs an erasing and verification method, wherein the erasing and verification method includes erasing the selected memory block during an erasing stage; and maintaining the bottom select gate to be turned on during a maintaining period before the top select gate are turned on during a verification stage.

Abstract: A memory device includes a plurality of memory blocks, and a control circuit. A selected memory block of the plurality of memory blocks comprises a top select gate, a bottom select gate, a plurality of word lines, a common-source line, and a P-well. The control circuit performs an erasing and verification method, wherein the erasing and verification method includes erasing the selected memory block during an erasing stage; and maintaining the bottom select gate to be turned on during a maintaining period before the top select gate are turned on during a verification stage.

Abstract: A rotatable battery mount includes a lock plate configured to be operatively coupled to a housing for an electronic locking device. The housing may be configured to mount to a panel or door of a cabinet or other article of furniture. A battery plate is pivotably coupled to the lock plate, and a battery case operatively coupled to the battery plate and configured to contain at least one battery for powering the electronic locking device. A hinge couples the lock plate and the battery plate, the hinge being configured to permit the battery plate to shift relative to the lock plate between a first position and a second position, the hinge configured to releasably secure the battery plate in at least the first position.

Abstract: A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. An opening is formed penetrating the alternating dielectric stack in a thickness direction of the substrate. A blocking layer is formed on a sidewall of the opening. A trapping layer is formed in the opening, and the trapping layer is formed on the blocking layer. The trapping layer includes a lower portion and an upper portion disposed above the lower portion. A thickness of the upper portion in a horizontal direction is greater than a thickness of the lower portion in the horizontal direction. The thickness distribution of the trapping layer is modified for improving the electrical performance of the 3D memory device.

Abstract: A modular system of locker banks for receipt and delivery of packages is described. The system may include associate modules each having one or more lockers and a control board in communication with each of the lockers in the module. Each locker may include a locker board having a processor and memory configured to control operation of the locker. Each locker may include a lock and a light. The system may further include one or more control modules, each having the above components and further including a kiosk having one or more input and output devices for entering information to the module for controlling operation of the system. The modular system may be connected to a server and/or an administrator terminal.

Abstract: A method for producing insoluble sulfur, including: heating a sulfur to 200-700° C., quenching it with water, aqueous solution and other solvents, drying and solidifying the resulting substance at 40-80° C. for 3-15 h, to obtain an insoluble sulfur crude product; crushing the crude product in water into particles with a particle size of 50-400 meshes, wherein the water temperature is not higher than 80° C.; pumping the slurry of water and crude product into the upper part of an extraction column, pumping solvent into the lower part thereof; making the water and solvent from the top of the column flow into a separation tank to separate water phase and solvent phase, heating and evaporating the solvent phase to recover solvent and obtain soluble sulfur; heating and evaporating the insoluble sulfur and solvent from the bottom of the column to recover solvent and obtain purified insoluble sulfur.

Abstract: A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.

Abstract: A memory device includes a memory array including memory strings. Each memory string includes a plurality of top memory cells, a plurality of bottom memory cells, and one or more dummy memory cells between the top memory cells and the bottom memory cells. The memory device also includes a plurality of word lines respectively coupled to gate terminals of the top memory cells and the bottom memory cells, and one or more dummy word lines respectively coupled to gate terminals of the one or more dummy memory cells. The memory device further includes a control circuit configured to program a target memory cell coupled to a selected word line of the plurality of word lines. To program the target memory cell, the control circuit is configured to apply a biased dummy word line pre-pulse signal to the one or more dummy word lines in a pre-charge period prior to a programming period.

Abstract: A memory device includes a top select cell, a top dummy cell and a string of memory cells. The top select cell has a first terminal coupled to a bit line and a control terminal coupled to a top select line. The top dummy cell has a control terminal coupled to a top dummy word line. The string of memory cells has control terminals coupled to respective word lines. A method operating the memory device includes prior to a program operation, applying a pre-pulse voltage to the top dummy word line, the top select line and the bit line while applying a low voltage to the word lines, and then sequentially applying the low voltage to the top dummy word line, the top select line and the bit line while applying the low voltage to the word lines.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: A graphene adsorbing material, a preparation method therefor and application thereof, and a cigarette filter tip and a cigarette are provided. The graphene adsorbing material comprises a fiber carrier, graphene and doped elements wherein the graphene and the doped elements are loaded on the fiber carrier and the doped elements comprise at least one of Al, Si and Fe. The graphene adsorbing material is obtained by contacting the fibers with the graphene material to load the graphene material on the fibers. By introducing the graphene and the doped elements in the fiber carrier, harmful substances with a type of fused aromatic hydrocarbons such as benzopyrene in smoke can be specifically adsorbed, filtered and removed; while nicotine and the other harmless substances are retained, and thus the smoking taste of a cigarette is not affected.

Abstract: A latch system has a latch hook pivotably mounted in the housing between a closed position and an open position. It further includes an actuating lever pivotably mounted in the housing between a locked position and an unlocked position. When the actuating lever is in the locked position and the latch hook is in the closed position, the actuating lever maintains the latch hook in the closed position, and when the actuating lever is in the unlocked position, the actuating lever does not interfere with movement of the latch hook between the open position and the closed position. The system can further include a mechanical indicator, and when the actuating lever is in the locked position, the indicator provides a locked indication, and when the actuating lever is in the unlocked indication position, the indicator provides an unlocked indication.

Abstract: A memory includes an upper deck and a lower deck. The upper deck includes a first upper dummy word line. The lower deck includes a first lower dummy word line. A method for reducing program disturbance of the memory includes adjusting a first upper bias voltage applied to the first upper dummy word line and/or a first upper threshold voltage of the first upper dummy word line to adjust a first difference between the first upper bias voltage and the first upper threshold voltage; and adjusting a first lower bias voltage applied to the first lower dummy word line and/or a first lower threshold voltage of the first lower dummy word line to adjust a second difference between the first lower bias voltage and the first lower threshold voltage.

Abstract: A three-dimensional (3D) memory device and a manufacturing method thereof are provided. The method includes the following steps. An alternating dielectric stack is formed on a substrate. An opening is formed penetrating the alternating dielectric stack in a thickness direction of the substrate. A blocking layer is formed on a sidewall of the opening. A trapping layer is formed in the opening, and the trapping layer is formed on the blocking layer. The trapping layer includes a lower portion and an upper portion disposed above the lower portion. A thickness of the upper portion in a horizontal direction is greater than a thickness of the lower portion in the horizontal direction. The thickness distribution of the trapping layer is modified for improving the electrical performance of the 3D memory device.

Abstract: A non-volatile memory device is disclosed. The non-volatile memory device includes a memory array, a plurality of word lines, a plurality of dummy word lines, a first control circuit and a second control circuit. The plurality of word lines are connected to a plurality of top memory cells and bottom memory cells of a memory string of the memory array. The plurality of dummy word lines are connected to a plurality of dummy memory cells connected between the plurality of top memory cells and bottom memory cells. The first control circuit is configured to apply a bit line pre-pulse signal to the bit line during a pre-charge period. The second control circuit is configured to apply a selected word line signal to a selected word line, apply an unselected word line signal to unselected word lines and apply a negative pre-pulse signal to the plurality of dummy word lines.

Abstract: A combination lock can be operated manually via the manipulation of dials and by way of an electronic key. The lock includes one or more rotatable selectors each having multiple indicia disposed thereon. Rotation of the rotatable selectors to predetermined indicia places the lock in the unlocked position. The lock can further include an electronic port and an actuator. Upon receipt of a predetermined credential via the port, the actuator can place the lock in in the unlocked position. The lock further includes a knob that, when the lock is in the unlocked position, can be rotated between a first position in which the lock is in a closed position and a second position in which the lock is in an open position. The combination lock may automatically scramble the positions of the dials upon opening for security purposes.

Abstract: When programming and verifying a memory device which includes a plurality of memory cells and a plurality of word lines, a first coarse programming is first performed on a first memory cell among the plurality of memory cells which is controlled by a first word line among the plurality of word lines, and then a second coarse programming is performed on a second memory cell among the plurality of memory cells which is controlled by a second word line among the plurality of word lines. Next, a first coarse verify current is used for determining whether the first memory cell passes a coarse verification and a second coarse verify current is used for determining whether the second memory cell passes a second coarse verification, wherein the second coarse verify current is smaller than the first coarse verify current.

Abstract: A latch system has a latch hook pivotably mounted in the housing between a closed position and an open position. It further includes an actuating lever pivotably mounted in the housing between a locked position and an unlocked position. When the actuating lever is in the locked position and the latch hook is in the closed position, the actuating lever maintains the latch hook in the closed position, and when the actuating lever is in the unlocked position, the actuating lever does not interfere with movement of the latch hook between the open position and the closed position. The system can further include a mechanical indicator, and when the actuating lever is in the locked position, the indicator provides a locked indication, and when the actuating lever is in the unlocked indication position, the indicator provides an unlocked indication.

Abstract: A latch system has a latch hook pivotably mounted in the housing between a closed position and an open position. It further includes an actuating lever pivotably mounted in the housing between a locked position and an unlocked position. When the actuating lever is in the locked position and the latch hook is in the closed position, the actuating lever maintains the latch hook in the closed position, and when the actuating lever is in the unlocked position, the actuating lever does not interfere with movement of the latch hook between the open position and the closed position. The system can further include a mechanical indicator, and when the actuating lever is in the locked position, the indicator provides a locked indication, and when the actuating lever is in the unlocked indication position, the indicator provides an unlocked indication.

Abstract: A combination lock can be operated manually via the manipulation of dials and by way of an electronic key. The lock includes one or more rotatable selectors each having multiple indicia disposed thereon. Rotation of the rotatable selectors to predetermined indicia places the lock in the unlocked position. The lock can further include an electronic port and an actuator. Upon receipt of a predetermined credential via the port, the actuator can place the lock in in the unlocked position. The lock further includes a knob that, when the lock is in the unlocked position, can be rotated between a first position in which the lock is in a closed position and a second position in which the lock is in an open position. The combination lock may automatically scramble the positions of the dials upon opening for security purposes.