Abstract: Examples are disclosed for accessing a dynamic random access memory (DRAM) array. In some examples, sub-arrays of a DRAM bank may be capable of opening multiple pages responsive to a same column address strobe. In other examples, sub-arrays of a DRAM bank may be arranged such that input/output (IO) bits may be routed in a serialized manner over an IO wire. For these other examples, the IO wire may pass through a DRAM die including the DRAM bank and/or may couple to a memory channel or bus outside of the DRAM die. Other examples are described and claimed.

Abstract: A mechanism is described for facilitating write tracking for following data eye movements across changing thermal conditions in memory systems according to one embodiment of the invention. A method of embodiments of the invention includes monitoring movements of a valid data eye associated with a memory device of a plurality of memory devices of a memory system at a computing system. The monitoring may include initiating write commands during one or more refresh periods associated with the valid data eye. The method may include determining drifting in the movement of the data eye, and correcting the drifting based on adjusting one or more existing phase interpolator values associated with the movements of the data eye.

Abstract: Memory sense amplifier voltage modulation. An embodiment of a an apparatus includes a memory including a sense amplifier; a first node for an high voltage rail for the sense amplifier and a second node for a low voltage rail for the sense amplifier; one or more elements to provide a first voltage to the first node and a second voltage to the second node; and a voltage control engine to control the one or more elements, where the voltage control engine is to independently set a value of the first voltage and a value of the second voltage over time.

Abstract: A wheel bearing arrangement with first rolling elements, which are capable of rolling on a first inner ring, wherein the rolling elements are guided by a first roller bearing cage, and an axial spacer element is provided for spacing apart the first inner ring from a bearing element, wherein the bearing element can in particular be a second inner ring. The intention is to facilitate the complex installation of the individual parts in wheel bearings for utility vehicles. The first rolling element cage forms, together with the axial spacer element, an axial form-fitting connection. The spacer element can be fixed to at least one of the inner rings via the form-fitting connection to the cage prior to tightening the wheel hub, together with the wheel bearing preinstalled thereon.

Abstract: Examples are disclosed for accessing a dynamic random access memory (DRAM) array. In some examples, sub-arrays of a DRAM bank may be capable of opening multiple pages responsive to a same column address strobe. In other examples, sub-arrays of a DRAM bank may be arranged such that input/output (IO) bits may be routed in a serialized manner over an IO wire. For these other examples, the IO wire may pass through a DRAM die including the DRAM bank and/or may couple to a memory channel or bus outside of the DRAM die. Other examples are described and claimed.

Abstract: Some embodiments provide capacitive AC coupling inter-layer communications for 3D stacked modules.

Abstract: A system monitors and dynamically changes memory mapping in a runtime of a computing system. The computing system has various memory resources, and multiple possible mappings that indicate how data is to be stored in and subsequently accessed from the memory resources. The performance of each memory mapping may be different under different runtime or load conditions of the computing device. A memory controller can monitor runtime performance of the current memory mapping and dynamically change memory mappings at runtime based on monitored or observed performance of the memory mappings. The performance monitoring can be modified for any of a number of different granularities possible within the system, from the byte level to memory channel.

Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: Some embodiments provide capacitive AC coupling inter-layer communications for 3D stacked modules.

Abstract: A rolling bearing sensor, especially a rotational speed sensor, having a housing and a signal pick-up which is arranged in the housing in a manner secured against rotation and is arranged, with the housing, in a stationary receptacle in a stationary part of a rolling bearing or in a stationary component adjoining a rolling bearing, for example, an axle journal, where the housing has an outer design via which the rolling bearing sensor in the receptacle is secured against rotation in a form-fitting manner. The sensor may have a groove which runs in the axial direction and interacts with a screw or a projection. Alternatively, a securing element which predefines a defined angular position may be pushed onto the sensor.

Abstract: Dynamic operations for operations for a stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.

Abstract: A close proximity memory arrangement maintains a point to point association between DQs, or data lines, to DRAM modules employs a clockless state machine on a DRAM side of the memory controller-DRAM interface such that a single FIFO on the memory controller side synchronizes or orders the DRAM fetch results. Addition of a row address (ROW-ADD) and column address (COL-ADD) strobe reducing latency and power demands. Close proximity point to point DRAM interfaces render the DRAM side FIFO redundant in interfaces such as direct stacked 3D DRAMs on top of the logic die hosting the memory controller. The close proximity point to point arrangement eliminates the DRAM internal FIFO and latency scheme, resulting in just the memory controller internal clock domain crossing FIFOs.

Abstract: An apparatus such as heterogeneous device includes at least a first die and a second die. The apparatus further includes a first inductive element, a second inductive element, and switch control circuitry. The switch control circuitry is disposed in the first die. The switch control circuitry controls current through the first inductive element to produce a first voltage. The first voltage powers the first die. The second inductive element is coupled to the first inductive element. The second inductive element produces a second voltage to power the second die. The first die and second die can be fabricated in accordance with different technologies and in which the first die and second die withstand different maximum voltages. A magnitude of the first voltage can be greater than a magnitude of the second voltage.

Abstract: Disclosed embodiments may include an apparatus having a segment wordline enable coupled to logic to selectively disable ones of a number of segment wordline drivers. The logic may partition a page of the apparatus to reduce power consumed through activation of the disabled ones of the number of segment wordlines. Other embodiments may be disclosed.

Abstract: A close proximity memory arrangement maintains a point to point association between DQs, or data lines, to DRAM modules employs a clockless state machine on a DRAM side of the memory controller-DRAM interface such that a single FIFO on the memory controller side synchronizes or orders the DRAM fetch results. Addition of a row address (ROW-ADD) and column address (COL-ADD) strobe reducing latency and power demands. Close proximity point to point DRAM interfaces render the DRAM side FIFO redundant in interfaces such as direct stacked 3D DRAMs on top of the logic die hosting the memory controller. The close proximity point to point arrangement eliminates the DRAM internal FIFO and latency scheme, resulting in just the memory controller internal clock domain crossing FIFOs.

Abstract: A roller bearing cage 16 with roller bearing pockets 18 which are arranged one next to the other in the circumferential direction and have the purpose of holding load-bearing roller bodies 10 of a roller bearing, wherein at least one end piece 14 which engages behind a roller bearing component 12 is formed on the roller bearing cage 16. The end piece 14, which is ideally embodied as a retaining claw, holds the inner ring and the roller body 10 together, but can be removed after or during the assembly by means of a predetermined rupture point 15, in order to make room for a further component, such as for example a sealing arrangement. As a result, despite the installation assistance, optimum use of the installation space is provided.

Abstract: Disclosed embodiments may include an apparatus having a segment wordline enable coupled to logic to selectively disable ones of a number of segment wordline drivers. The logic may partition a page of the apparatus to reduce power consumed through activation of the disabled ones of the number of segment wordlines. Other embodiments may be disclosed.

Abstract: The invention relates to a photovoltaic system with a plastic support and a photovoltaic module for installation on roofs. The plastic support (1) may be mounted directly to a roof substructure, so that an additional roof covering can be dispensed with. The photovoltaic modules may be fixed on the plastic support (1) without screwing.

Abstract: Resonant clocking for three-dimensional stacked devices. An embodiment of an apparatus includes a stack including integrated circuit dies; and through silicon vias through at least one of the dies, wherein at least a first through silicon via of the through silicon vias includes a capacitive structure or an inductive structure, the first through silicon via being formed in a first die of the plurality of dies. The apparatus includes a resonant circuit, the first through silicon via used as a first circuit element of the resonant circuit.

Abstract: Memory sense amplifier voltage modulation. An embodiment of a an apparatus includes a memory including a sense amplifier; a first node for an high voltage rail for the sense amplifier and a second node for a low voltage rail for the sense amplifier; one or more elements to provide a first voltage to the first node and a second voltage to the second node; and a voltage control engine to control the one or more elements, where the voltage control engine is to independently set a value of the first voltage and a value of the second voltage over time.