Abstract: A switching device, according to one embodiment, includes: a cylindrical pillar; an annular cylindrical oxide layer which encircles a portion of the cylindrical pillar; an annular cylindrical gate contact which encircles a portion of the annular cylindrical oxide layer; and a source contact which encircles a portion of the cylindrical pillar toward a first end of the cylindrical pillar. Other systems are also described in additional embodiments herein which provide various different switching devices having improved components including improved cylindrical gate contacts, improved source contacts, and/or improved drain contacts. These improved systems and components thereof may be implemented in vertical transistor structures which also include the aforementioned cylindrical pillar and cylindrical gate contact in comparison to conventional surface transistor structures.

Abstract: According to one embodiment, an apparatus includes a bottom electrode layer positioned above a substrate in a film thickness direction, a source layer positioned above the bottom electrode layer in the film thickness direction, an impact ionization channel (i-channel) layer positioned above the source layer in the film thickness direction, a drain layer positioned above the i-channel layer in the film thickness direction, an upper electrode layer positioned above the drain layer in the film thickness direction that forms a stack that includes the bottom electrode layer, the source layer, the i-channel layer, the drain layer, and the upper electrode layer, and a gate layer positioned on sides of the i-channel layer along a plane perpendicular to the film thickness direction in an element width direction. The gate layer is positioned closer to the drain layer than the source layer. Other apparatuses are described in accordance with more embodiments.

Abstract: A magnetic device, according to one approach, includes: a plurality of perpendicular magnetic tunnel junction (p-MTJ) cells, each p-MTJ cell having a transistor and a magnetic tunnel junction (MTJ) sensor. Moreover, each of the transistors includes a drain terminal, a source terminal, and a gate terminal. The magnetic device also includes: a first common word line coupled to the gate terminal of each transistor in a first subset of the plurality of p-MTJ cells, a first common bit line coupled to a first end of each MTJ sensor in a second subset of the plurality of p-MTJ cells, and a first common source line coupled to the drain terminal of each transistor in the first subset. A second end of each of the MTJ sensors in the second subset is coupled to the source terminal of each respective transistor in the second subset.

Abstract: According to one embodiment, an apparatus includes a channel layer positioned above a substrate in a film thickness direction, the channel layer including a lower channel layer positioned below an upper channel layer in the film thickness direction, a gate dielectric layer positioned on sides of the channel layer, a gate layer positioned on sides of the gate dielectric layer, and an electrode layer positioned above an upper portion of the channel layer in the film thickness direction. Sides of the electrode layer extend beyond sides of the channel layer in an element thickness direction perpendicular to the film thickness direction. Other systems and methods of manufacturing thereof are described in accordance with more embodiments.

Abstract: According to one embodiment, an apparatus includes: a substrate, an array of 3D structures, where each 3D structure includes a source region having a first conductivity, a series of layers positioned in a vertical direction, a channel material on a surface of at least one sidewall of each 3D structure, and a gate dielectric material on the channel material. The series of layers includes a dielectric layer positioned above the substrate, a plurality of a set of MTJ layers positioned above the dielectric layer, and a buffer layer positioned in between the dielectric layer and each set of MTJ layers thereof. The magnetic memory device further includes an isolation region positioned between the 3D structures and at least one gate region positioned above the isolation region, where each gate region is coupled to at least one sidewall of each 3D structure.

Abstract: According to one embodiment, a method includes forming an etch-stop layer above a substrate, forming a matrix layer above the etch-stop layer, forming a set of pillars above the matrix layer, the set of pillars having a predefined spacing therebetween along a plane in an element width direction and an element depth direction, the plane being normal to a film thickness direction, forming a functionalization layer above the pillars, along sides of the pillars, and above the matrix layer, forming first diblock copolymer layers above the functionalization layer, the first diblock copolymer layers self-segregating into a first polymer and a second polymer in a first pattern, removing the first polymer from the first diblock copolymer layers to create a first mask layer, and removing portions of the matrix layer to expose portions of the etch-stop layer positioned therebelow and create a second pattern in the matrix layer.

Abstract: According to one embodiment, a method includes forming a bottom electrode layer above a substrate in a film thickness direction, forming a source layer above the bottom electrode layer in the film thickness direction, forming an impact ionization channel (i-channel) layer above the source layer in the film thickness direction, forming a drain layer above the i-channel layer in the film thickness direction, forming an upper electrode layer above the drain layer in the film thickness direction to form a stack that includes the bottom electrode layer, the source layer, the i-channel layer, the drain layer, and the upper electrode layer, and forming a gate layer positioned on sides of the i-channel layer along a plane perpendicular to the film thickness direction in an element width direction. The gate layer is formed in a position closer to the drain layer than the source layer.

Abstract: In one embodiment, an apparatus includes lower electrodes positioned below a surface of a substrate, the substrate including crystalline Si, a plurality of strap regions positioned above the lower electrodes and below sets of pillars of Si, the pillars rising above the substrate, the sets of pillars being aligned in a first direction along a plane perpendicular to a film thickness direction, and the strap regions extending above a surface of the substrate, silicide junctions positioned between each of the strap regions and a corresponding lower electrode positioned therebelow, upper electrodes positioned above each of the pillars, gate dielectric layers positioned on sides of the pillars to a height greater than a lower edge of the upper electrodes, and gate layers positioned on sides of the gate dielectric layers in a second direction along the plane and perpendicular to the first direction that transverse a plurality of sets of pillars.

Abstract: A memory array provided on a semiconductor substrate includes: (a) channel structures arranged in multiple layers above the semiconductor substrate, each channel structure extending along a first direction substantially parallel a surface of the semiconductor substrate; (b) gate structures each extending along a second direction substantially transverse to the first direction and each being adjacent one of the channel structures, separated therefrom by a layer of memory material; and (c) conductors provided to connect the gate structures with circuitry fabricated in the semiconductor substrate, wherein at each location where one of the gate structure adjacent one of the channel structures, a portion of the gate structure, a portion of the channel structure and the layer of memory material constitute a memory cell of the memory array. Two or more memory cells sharing a channel structure are connected in series to form a NAND string.

Abstract: A monolithic 3-D dynamic memory structure includes independently addressable strings of dual-gate devices. In each dual-gate device charge is deliberately stored on one side of the dual-gate. Although the stored charge may leak away, the stored charge in a dual-gate device of the present invention need only be refreshed at much longer intervals than conventional DRAM cells.

Abstract: A memory array provided on a semiconductor substrate includes: (a) channel structures arranged in multiple layers above the semiconductor substrate, each channel structure extending along a first direction substantially parallel a surface of the semiconductor substrate; (b) gate structures each extending along a second direction substantially transverse to the first direction and each being adjacent one of the channel structures, separated therefrom by a layer of memory material; and (c) conductors provided to connect the gate structures with circuitry fabricated in the semiconductor substrate, wherein at each location where one of the gate structure adjacent one of the channel structures, a portion of the gate structure, a portion of the channel structure and the layer of memory material constitute a memory cell of the memory array. Two or more memory cells sharing a channel structure are connected in series to form a NAND string.

Abstract: A non-volatile memory device combines thin-film transistor-based memory cells with bulk mono-crystalline silicon transistors, which can more efficiently drive bit lines for fast sensing of the stored data in the thin-film memory cells.

Abstract: A device for providing electrostatic discharge (ESD) protection is described which includes a silicon controlled rectifier (SCR), a mechanism for triggering the SCR, and a pair of contact regions of opposing conductivity type distinct from regions of the SCR that are interposed between the cathodic and anodic regions of the SCR. The contact regions are configured to collect charge generated by the SCR. In some embodiments, the device may include a transistor and the cathodic region of the SCR may dually serve as a source contact region of the transistor. A circuit is described which includes an ESD protection device coupled between high and low voltage power supply bus bars, wherein the ESD protection device includes an SCR as well as a pair of contact regions of opposing conductivity type distinct from the SCR and interposed between the cathodic and anodic regions of the SCR.

Abstract: A memory cell according to the present invention comprises a bottom conductor, a doped semiconductor pillar, and a top conductor. The memory cell does not include a dielectric rupture antifuse separating the doped semiconductor pillar from either conductor, or within the semiconductor pillar. The memory cell is formed in a high-impedance state, in which little or no current flows between the conductors on application of a read voltage. Application of a programming voltage programs the cell, converting the memory cell from its initial high-impedance state to a low-impedance state. A monolithic three dimensional memory array of such cells can be formed, comprising multiple memory levels, the levels monolithically formed above one another.

Abstract: A voltage protection device and method is provided to prevent accidental triggering of an silicon-controlled rectifier (SCR) unless the electrostatic discharge (ESD) is at a predefined threshold above the normal power supply operating voltage or below the ground supply operating voltage. The holding voltage upon the SCR is maintained above the threshold voltage to prevent accidental triggering. The present SCR avoids use of an additional field effect transistor (FET), and avoids relying upon the breakdown of the drain terminal of the FET, but instead programs the amount of holding voltage needed above the power supply voltage using mask-programmability, fuses, or other means for maintaining the holding voltage to a desired range above the power supply voltage. The programmed holding voltage is implemented using a barrier region between the PNP and the NPN of the PNPN junctions of the SCR.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing.

Abstract: The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.

Abstract: The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.

Abstract: The invention provides for polysilicon vias connecting conductive polysilicon layers formed at different heights. Polysilicon vias are advantageously used in a monolithic three dimensional memory array of charge storage transistors. Polysilicon vias according to the present invention can be used, for example, to connect the channel layer of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells formed above the first device level. Similarly, vias according to the present invention can be used to connect the wordline of a first device level of charge storage transistor memory cells to the channel layer of a second device layer of such cells.