Abstract: Disclosed are smart canisters for use in the materials industry. The smart canisters include sensors and communication devices that allow users to continuously monitor various physical and chemical properties of the product insider the canisters. For a variety of products that have limited stability and tend to decompose over time, variations in product properties can adversely impact the process in which the material is used. The smart canister can alert the user, in real time, when the product is starting to deviate from pre-set functional parameters.

Abstract: Embodiments relate to variable branch prediction. An aspect includes determining a branch selection of an execution unit of a processor and determining whether a present prediction state of the state machine correctly predicted the branch selection by the execution unit. The aspect includes determining whether a predetermined condition is met for performing an alternative state transition and, based on determining that the predetermined condition is met, changing the present prediction state of the branch prediction state machine from the one state to another state according to an alternative state transition process based on the branch selection of the execution unit and the determination whether the present prediction state of the state machine correctly predicted the branch selection by the execution unit.

Abstract: There is broadly contemplated herein an arrangement whereby each event source feeds a small dedicated “pre-counter” while an actual count is kept in a 64-bit wide RAM. Such an implementation preferably may involve a state machine that simply sweeps through the pre-counters, in a predetermined fixed order. Preferably, the state machine will access each pre-counter, add the value from the pre-counter to a corresponding RAM location, and then clear the pre-counter. Accordingly, the pre-counters merely have to be wide enough such that even at a maximal event rate, the pre-counter will not be able to wrap (i.e., reach capacity or overflow) before the “sweeper” state machine accesses the pre-counter.

Abstract: Si(OEt)2[CH2—Si(OEt)3]2 compounds are synthesized by reacting a Grignard reagent having the formula Si(OEt)3(CH2MgCl) with a quenching agent having the formula Si(OEt)2Cl2.

Abstract: Methods and structures that implement an event counter in a RAM are provided. A method includes providing a count-RAM, a carry-RAM, and a pre-counter corresponding to an event source. A column in the count-RAM and a column in the carry-RAM represent a value of a value of the event counter. The method further includes storing a count of the event counter received via the pre-counter in the count-RAM and the carry-RAM in a transposed, bit-serial format, such that location zero of the count-RAM and the carry-RAM counts the least significant bit (LSB) of the event counter.

Abstract: There is broadly contemplated herein an arrangement whereby each event source feeds a small dedicated “pre-counter” while an actual count is kept in a 64-bit wide RAM. Such an implementation preferably may involve a state machine that simply sweeps through the pre-counters, in a predetermined fixed order. Preferably, the state machine will access each pre-counter, add the value from the pre-counter to a corresponding RAM location, and then clear the pre-counter. Accordingly, the pre-counters merely have to be wide enough such that even at a maximal event rate, the pre-counter will not be able to wrap (i.e., reach capacity or overflow) before the “sweeper” state machine accesses the pre-counter.

Abstract: Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Abstract: Methods and structures that implement an event counter in a RAM are provided. A method includes providing a count-RAM, a carry-RAM, and a pre-counter corresponding to an event source. A column in the count-RAM and a column in the carry-RAM represent a value of a value of the event counter. The method further includes storing a count of the event counter received via the pre-counter in the count-RAM and the carry-RAM in a transposed, bit-serial format, such that location zero of the count-RAM and the carry-RAM counts the least significant bit (LSB) of the event counter.

Abstract: Disclosed are methods of purifying a ruthenium containing precursor by removing oxygen from the ruthenium containing precursor by flowing an inert gas through the ruthenium containing precursor. Also disclosed are methods of forming an improved ruthenium containing film using the purified ruthenium containing precursor.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Abstract: A method of transmitting data and a data management layer. The method includes: providing a cyclic redundancy check generator connected to a retry buffer through a multiplexer; providing a sequence number generator connected to the retry buffer through the multiplexer; generating a sequence number; generating a sequence number cyclic redundancy check remainder using preset inputs of a cyclic redundancy check remainder latch of the cyclic redundancy check generator; providing an input data bus connected directly to the cyclic redundancy check generator and connected to the retry buffer through the multiplexer; providing an output data bus directly connected to the retry buffer; receiving a data packet on the input data bus; adding the sequence number and the cyclic redundancy check remainder to the data packet to create a modified data packet; storing the modified data packet in the retry buffer; and transmitting the modified data packet using the output data bus.

Abstract: A chemical storage device and a method for monitoring chemical usage are described herein. The device and disclosed method utilize a chemical storage canister and a load cell integrated into one transportable unit. The load cell is capable of compensating for the added weight of attached dispensing devices used in the semiconductor industry. Additionally, the load cell continuously displays the weight of the chemicals as they are withdrawn from the chemical storage device. These functionalities are included in the control logic of the load cell which is incorporated into the load cell itself.

Abstract: Methods and compositions for the deposition of a metal containing film on a substrate. The film is deposited with a substantially adduct free precursor which is prepared by a process to remove the adduct from an adducted starting material.

Abstract: The present invention provides for two separate processes for removing impurities from an organic solvent based ruthenium precursor. The first process comprises the steps of contacting the organic solvent based ruthenium precursor with one or more drying agents under an inert gas blanket for a sufficient period of time to allow at least a portion of the impurities in the organic solvent based ruthenium precursor to be adsorbed by the one or more drying agents; and separating the one or more drying agents which have at least a portion of the impurities adsorbed thereon from the organic solvent based ruthenium precursor.

Abstract: There is broadly contemplated herein an arrangement whereby each event source feeds a small dedicated “pre-counter” while an actual count is kept in a 64-bit wide RAM. Such an implementation preferably may involve a state machine that simply sweeps through the pre-counters, in a predetermined fixed order. Preferably, the state machine will access each pre-counter, add the value from the pre-counter to a corresponding RAM location, and then clear the pre-counter. Accordingly, the pre-counters merely have to be wide enough such that even at a maximal event rate, the pre-counter will not be able to wrap (i.e., reach capacity or overflow) before the “sweeper” state machine accesses the pre-counter.

Abstract: A memory has a set of address spaces to which token data is written and read. Each address space has a token status bit. A token generator allocates token data to the memory address spaces. Upon a reset occurring, a logic circuit provides logic “0” to the token generator disabling status bit checking control so that all the tokens can be issued sequentially. New token data is allocated to the address spaces sequentially and the respective status bit is updated or maintained as logic “1”. When all address spaces have been allocated, the logic circuit provides the actual state of the status bit to the token generator to control subsequent allocations.