Patents by Inventor Atsuki Fukazawa

Atsuki Fukazawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming doped silicon oxide thin films
    Patent number: 9153441
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: February 19, 2014
    Date of Patent: October 6, 2015
    Assignee: ASM International, N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Method for cleaning reaction chamber using pre-cleaning process
    Patent number: 9142393
    Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: September 22, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Tatsuhiro Okabe, Atsuki Fukazawa
  • Method for Forming Conformal Nitrided, Oxidized, or Carbonized Dielectric Film by Atomic Layer Deposition
    Publication number: 20150147483
    Abstract: A method for forming a film on a patterned surface of a substrate by atomic layer deposition (ALD) processing includes: adsorbing onto a patterned surface a first precursor containing silicon or metal in its molecule; adsorbing onto the first-precursor-adsorbed surface a second precursor containing no silicon or metal in its molecule; exposing the second-precursor-adsorbed surface to an excited reactant to oxidize, nitride, or carbonize the precursors adsorbed on the surface of the substrate; and repeating the above cycle to form a film on the patterned surface of the substrate.
    Type: Application
    Filed: November 26, 2013
    Publication date: May 28, 2015
    Applicant: ASM IP Holding B.V.
    Inventor: Atsuki Fukazawa
  • METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
    Publication number: 20150147875
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: September 30, 2014
    Publication date: May 28, 2015
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
    Patent number: 9023737
    Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.
    Type: Grant
    Filed: June 20, 2013
    Date of Patent: May 5, 2015
    Assignee: ASM IP Holding B.V.
    Inventors: Julien Beynet, Ivo Raaijmakers, Atsuki Fukazawa
  • METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS
    Publication number: 20150017794
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Application
    Filed: February 19, 2014
    Publication date: January 15, 2015
    Applicant: ASM International. N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Method for forming Si-containing film using two precursors by ALD
    Patent number: 8912101
    Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: December 16, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Naoto Tsuji, Atsuki Fukazawa, Noboru Takamure, Suvi Haukka, Antti Juhani Niskanen, Hyung Sang Park
  • Method For Cleaning Reaction Chamber Using Pre-cleaning Process
    Publication number: 20140345644
    Abstract: A method for cleaning a reaction chamber is conducted after depositing an oxide, nitride, or oxynitride film on a substrate in a reaction chamber having interior surfaces on which oxide, nitride, or oxynitride is accumulated as a result of the deposition, said oxide, nitride, or oxynitride being selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride, metal oxide, metal nitride, and metal oxynitride. The method includes: oxidizing or nitriding the oxide, nitride, or oxynitride is accumulated on the interior surfaces of the reaction chamber, by RF-excited plasma of an oxygen- or nitrogen-containing gas in the absence of halide gas as a pre-cleaning step; and cleaning the interior surfaces of the reaction chamber, by RF-excited plasma of a halide cleaning gas.
    Type: Application
    Filed: May 23, 2013
    Publication date: November 27, 2014
    Inventors: Tatsuhiro Okabe, Atsuki Fukazawa
  • Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
    Publication number: 20140273531
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: October 24, 2013
    Publication date: September 18, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda
  • Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
    Publication number: 20140273477
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: January 29, 2014
    Publication date: September 18, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
    Patent number: 8784950
    Abstract: A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.
    Type: Grant
    Filed: July 16, 2012
    Date of Patent: July 22, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Method for forming insulation film using non-halide precursor having four or more silicons
    Patent number: 8784951
    Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.
    Type: Grant
    Filed: November 16, 2012
    Date of Patent: July 22, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuka
  • Method for forming low-carbon CVD film for filling trenches
    Patent number: 8765233
    Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.
    Type: Grant
    Filed: December 9, 2008
    Date of Patent: July 1, 2014
    Assignee: ASM Japan K.K.
    Inventors: Atsuki Fukazawa, Hisashi Tazawa, Shigeyuki Onizawa
  • Method for Forming Insulation Film Using Non-Halide Precursor Having Four or More Silicons
    Publication number: 20140141625
    Abstract: A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate.
    Type: Application
    Filed: November 16, 2012
    Publication date: May 22, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
    Patent number: 8722546
    Abstract: A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.
    Type: Grant
    Filed: June 11, 2012
    Date of Patent: May 13, 2014
    Assignee: ASM IP Holding B.V.
    Inventors: Atsuki Fukazawa, Takahiro Oka
  • Methods for forming doped silicon oxide thin films
    Patent number: 8679958
    Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.
    Type: Grant
    Filed: November 2, 2012
    Date of Patent: March 25, 2014
    Assignee: ASM International N.V.
    Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
  • Method of forming insulation film using plasma treatment cycles
    Patent number: 8647722
    Abstract: A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: February 11, 2014
    Assignee: ASM Japan K.K.
    Inventors: Akiko Kobayashi, Akira Shimizu, Kuo-wei Hong, Nobuyoshi Kobayashi, Atsuki Fukazawa
  • Method for Forming Aluminum Oxide Film Using Al Compound Containing Alkyl Group and Alkoxy or Alkylamine Group
    Publication number: 20140017414
    Abstract: A method for forming a conformal film of aluminum oxide on a substrate having a patterned underlying layer by PEALD includes: adsorbing an Al precursor containing an Al—C bond and an Al—O—C or Al—N—C bond; providing an oxidizing gas and an inert gas; applying RF power to the reactant gas and the reaction-assisting gas to react the adsorbed precursor with the reactant gas on the surface, thereby forming a conformal film of aluminum oxide on the patterned underlying layer of the substrate, wherein the substrate is kept at a temperature of about 200° C. or lower.
    Type: Application
    Filed: July 16, 2012
    Publication date: January 16, 2014
    Applicant: ASM IP HOLDING B.V.
    Inventors: Atsuki Fukazawa, Hideaki Fukuda
  • Method for Forming Conformal, Homogeneous Dielectric Film by Cyclic Deposition and Heat Treatment
    Publication number: 20140017908
    Abstract: A method for forming a conformal, homogeneous dielectric film includes: forming a conformal dielectric film in trenches and/or holes of a substrate by cyclic deposition using a gas containing a silicon and a carbon, nitrogen, halogen, hydrogen, and/or oxygen, in the absence of a porogen gas; and heat-treating the conformal dielectric film and continuing the heat-treatment beyond a point where substantially all unwanted carbons are removed from the film and further continuing the heat-treatment to render substantially homogeneous film properties of a portion of the film deposited on side walls of the trenches and/or holes and a portion of the film deposited on top and bottom surfaces of the trenches and/or holes.
    Type: Application
    Filed: June 20, 2013
    Publication date: January 16, 2014
    Inventors: Julien Beynet, Ivo Raaijmakers, Atsuki Fukazawa
  • Method for Forming Silicon-Containing Dielectric Film by Cyclic Deposition with Side Wall Coverage Control
    Publication number: 20130330933
    Abstract: A method of forming a dielectric film having Si—C bonds and/or Si—N bonds on a semiconductor substrate by cyclic deposition, includes: (i) conducting one or more cycles of cyclic deposition in a reaction space wherein a semiconductor substrate is placed, using a Si-containing precursor and a reactant gas; and (ii) before or after step (i), applying a pulse of RF power to the reaction space while supplying a rare gas and a treatment gas without supplying a Si-containing precursor, whereby a dielectric film having Si—C bonds and/or Si—N bonds is formed on the semiconductor substrate.
    Type: Application
    Filed: June 11, 2012
    Publication date: December 12, 2013
    Applicant: ASM IP HOLDING B.V.
    Inventors: Atsuki Fukazawa, Takahiro Oka