Abstract: A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

Abstract: A method for forming a silicon-containing dielectric film on a substrate by atomic layer deposition (ALD) includes: providing two precursors, one precursor containing a halogen in its molecule, another precursor containing a silicon but no halogen in its molecule, adsorbing a first precursor, which is one of the two precursors onto a substrate to deposit a monolayer of the first precursor; adsorbing a second precursor, which is the other of the two precursors onto the monolayer of the first precursor to deposit a monolayer of the second precursor; and exposing the monolayer of the second precursor to radicals of a reactant to cause surface reaction with the radicals to form a compound monolayer of a silicon-containing film.

Abstract: A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.

Abstract: A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

Abstract: A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: supplying a precursor in a pulse to adsorb the precursor on a surface of a substrate; supplying a reactant gas in a pulse over the surface without overlapping the supply of the precursor; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least two halogens attached to silicon in its molecule.

Abstract: A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

Abstract: A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.

Abstract: A method for forming a silicon carbide film containing Si, C, O, H, and optionally N on a substrate placed in a reaction space, includes the steps of: introducing into the reaction space a precursor containing Si, C, O, and H and having at least one Si—O bond in its molecule; introducing into the reaction space an inert gas; applying RF power in the reaction space, wherein a ratio of a flow rate (sccm) of the inert gas to the RF power (W/cm2) is controlled at 30-850; and thereby depositing on the substrate a silicon carbide film containing Si, C, O, H, and optionally N.

Abstract: A method for forming an interconnect structure with airgaps, includes: providing a structure having a trench formed on a substrate; depositing a spacer oxide layer on sidewalls of the trench as sidewall spacers by plasma enhanced atomic layer deposition; filling the trench having the sidewall spacers with copper; removing the sidewall spacers to form an airgap structure; and encapsulating the airgap structure, wherein airgaps are formed between the filled copper and the sidewalls of the trench.

Abstract: A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film.

Abstract: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

Abstract: A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside which the semiconductor substrate is placed; depositing a conformal amorphous hydrogenated carbon layer on the irregular surface of the semiconductor substrate by plasma CVD; and controlling the deposition of the conformal ratio of the depositing conformal amorphous hydrogenated carbon layer. The controlling includes (a) adjusting a step coverage of the conformal amorphous hydrogenated carbon layer to about 30% or higher as a function of substrate temperature, and (b) adjusting a conformal ratio of the conformal amorphous hydrogenated carbon layer to about 0.9 to about 1.1 as a function of RF power and/or argon gas flow rate.

Abstract: A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside which the semiconductor substrate is placed; depositing a conformal amorphous hydrogenated carbon layer on the irregular surface of the semiconductor substrate by plasma CVD; and controlling the deposition of the conformal ratio of the depositing conformal amorphous hydrogenated carbon layer. The controlling includes (a) adjusting a step coverage of the conformal amorphous hydrogenated carbon layer to about 30% or higher as a function of substrate temperature, and (b) adjusting a conformal ratio of the conformal amorphous hydrogenated carbon layer to about 0.9 to about 1.

Abstract: A method of filling a recess with an insulation film includes: introducing an alkoxysilane or aminosilane precursor containing neither a Si—C bond nor a C—C bond into a reaction chamber where a substrate having an irregular surface including a recess is placed; and depositing a flowable Si-containing insulation film on the irregular surface of the substrate to fill the recess therewith by plasma reaction at ?50° C. to 100° C.

Abstract: A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at ?50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds.

Abstract: A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

Abstract: A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film.

Abstract: A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

Abstract: A method for forming an insulation film on a semiconductor substrate by plasma reaction includes: introducing into a reaction chamber a source gas of a silicon-containing hydrocarbon compound comprising in its molecule at least one Si—O bond and at least one bond selected from the group consisting of a Si—Si bond, Si—N bond, and Si—H bond; introducing into the reaction chamber an additive gas constituted by C, H, and optionally O; controlling a susceptor at a temperature of ?50° C. to 50° C.; forming by plasma reaction an insulation film constituted by Si, O, H, and optionally N on an irregular surface of a substrate at a deposition rate of 100 nm/min or less; and heat-treating the substrate with the insulation film, thereby increasing a density of the insulation film to more than 2.1 g/cm3 as a result of the heat treatment.

Abstract: A method for forming a silicon-containing insulation film on a substrate by plasma polymerization includes: introducing a reaction gas comprising (i) a source gas comprising a silicon-containing hydrocarbon cyclic compound containing at least one vinyl group (Si-vinyl compound), and (ii) an additive gas, into a reaction chamber where a substrate is placed; and applying radio-frequency power to the gas to cause plasma polymerization, thereby depositing an insulation film on the substrate.