Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: A circuit and method reduces noise signals coupled to a reference voltage used by a digital differential input receiver having an input that is coupled to an input/output terminal. The circuit and method selectively isolates the reference voltage from the input/output terminal to which output signals are selectively applied. The isolation occurs responsive to detecting that an output signal is being applied to the input/output terminal so that transitions of the output signal are not coupled through the input receiver to generate noise in the reference voltage. In one embodiment, the isolation is provided by placing an isolation circuit between the input receiver and either the input/output terminal or a source of the reference voltage. In another embodiment, the isolation is provided by selectively biasing the input receiver so that coupling of output signal transitions through the input receiver is substantially reduced.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: The present invention is directed to a method and apparatus for providing variable output drive capability to an output driver. One aspect of the present invention is related to a pre-driver or the like which provides variable output drive capability. The pre-driver is comprised of two paths each divided into output stages. A signal is generated in response to determining the relative strength of the n-channel and p-channel transistors in a subsequent output amplifier. The signal is used to enable certain of the pre-driver output stages in each output path. Another aspect of the present invention is related to a method of correcting output skews in a subsequent amplification stage. Other aspects of the present invention relate to a portion of a data path, a memory device, and a computer system all having a pre-driver with pre-driver output transistors responsive to signals indicative of the strength of output drive transistors.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: A phase splitter is formed by first and second branches that generate respective first and second complimentary output clock signals from an input clock signal. The first branch includes two series connected inverters, the first of which receives the input clock signal and the second of which outputs a non-complimentary output clock signal. The second branch includes three series connected inverters, the first of which receives the input clock signal and the third of which outputs a complimentary output clock signal. An inverter is coupled from the output of the second inverter in the second branch to the output of the first inverter in the first branch to increase the slew rate of the signal applied to the input of the second inverter. In one embodiment, first and second parallel pairs of diode-coupled transistors are coupled from the output of the third inverter in the second branch to the outputs of respective first inverters in the first and second branches.

Abstract: Depletion-mode ferroelectric transistors are adapted for use as non-volatile memory cells. Various embodiments are described having a diode interposed between the bit line and a source/drain region of the transistor for added margin against read disturb. Various additional embodiments are described having an array architecture such that two memory cells sharing the same bit line also share the same program line. Using this configuration, non-selected cells are readily supplied with gate/source voltages sufficient to maintain the cells in a deactivated state during read and write operations on selected cells.

Abstract: The present invention is directed to a method and apparatus for providing variable output drive capability to an output driver. One aspect of the present invention is related to a pre-driver or the like which provides variable output drive capability. The pre-driver is comprised of two paths each divided into output stages. A signal is generated in response to determining the relative strength of the n-channel and p-channel transistors in a subsequent output amplifier. The signal is used to enable certain of the pre-driver output stages in each output path. Another aspect of the present invention is related to a method of correcting output skews in a subsequent amplification stage. Other aspects of the present invention relate to a portion of a data path, a memory device, and a computer system all having a pre-driver with pre-driver output transistors responsive to signals indicative of the strength of output drive transistors.

Abstract: A method of boosting the voltage supplied to an output pad driver through a bus connected to a voltage regulator. The method comprises momentarily connecting the bus directly to a voltage source and temporarily enabling the voltage regulator to source additional current to an output terminal thereof. A method of boosting the gate voltages for transistors controlling the voltage appearing on output pads of a solid state memory device, the gate voltages supplied by a voltage regulator through an output bus. The method comprises periodically determining the demand for gate voltage and, when the demand is high, momentarily connecting each line of the bus to a voltage source, and temporarily enabling the voltage regulator to source additional current to an output terminal thereof.

Abstract: The present invention is directed to a method and apparatus for providing unbalanced output drive capability, for example, to correct for output skews in subsequent output stages. One aspect of the present invention relates to a pre-driver or the like which provides unbalanced output drive capability. The pre-driver is comprised of first and second data paths having a plurality of transistor output stages and a plurality of switches for controlling the conductivity of the plurality of output stages in response to the level of conductivity of a subsequent driver output stage. Another aspect of the present invention relates to a method of correcting output skews in a subsequent amplification stage. Other aspects of the present invention relate to a portion of a data path, a memory device, and a computer system all having a pre-driver with pre-driver output transistors responsive to signals indicative of the strength of output drive transistors.

Abstract: A method and apparatus for supporting a voltage in an output driver circuit and smoothing the response of the voltage to switching operations in the output driver circuit. A capacitive element is coupled to the gate of a drive transistor in an output driver leg circuit of an output driver and to a switched signal voltage. By coupling the capacitive element to a signal voltage other than ground, a smaller capacitive element is required than that required for coupling the capacitive element to ground. An embodiment of the invention further includes a plurality of capacitive elements configured such that the voltage support is applied to the gate of the drive transistor in phases rather than all at once to smooth voltage response to drive transistor switching.

Abstract: An amplifying circuit includes a compensation unit with a feeding forward path to reduce the effect of the common mode noise on the output signals of a differential amplifier. The compensation unit includes a capacitive network connected to input nodes and output nodes of the differential amplifier. The capacitive network provides the feeding forward path.

Abstract: An amplifying circuit includes an amplifying stage for receiving input signals to generate output signals. A swing detect unit detects signal levels of the output signals. A clamp unit variably limits signal levels of the input signals based on the signal levels of the output signals detected by the swing detect unit to improve the speed of the amplifying circuit.

Abstract: Improved methods and structures are provided that allow for fast access of a memory device. Embodiments of a structure include a memory device that comprises a decode logic circuitry that decodes an address to generate a decoded address. The memory device also includes a counter circuitry coupled to the decode logic circuitry that generates a counter value based on the decoded address. The counter value is used to access drivers of the memory device during a setup time.