Abstract: Improved methods and structures are provided that allow for fast access of a memory device. Embodiments of a structure include a memory device that comprises a decode logic circuitry that decodes an address. The memory device also includes a counter circuitry coupled to the decode logic circuitry that generates a counter value based on the decoded address. Other embodiments of a structure include a compare circuit that determines whether a page count is complete in a memory structure. The compare circuit includes a holding circuitry that includes a number of latches for holding an encoded version of a memory address. The compare circuit also includes a multiplexing circuitry coupled to the holding circuitry.

Abstract: Improved methods and structures are provided that allow for fast access of a memory device. Embodiments of a structure include a memory device that comprises a decode logic circuitry that decodes an address. The memory device also includes a counter circuitry coupled to the decode logic circuitry that generates a counter value based on the decoded address. Other embodiments of a structure include a compare circuit that determines whether a page count is complete in a memory structure. The compare circuit includes a holding circuitry that includes a number of latches for holding an encoded version of a memory address. The compare circuit also includes a multiplexing circuitry coupled to the holding circuitry.

Abstract: A DRAM memory device having two sets of power buses is provided. Each set includes a first bus having a first potential and a second bus having a second potential, both of which are required to activate a row of memory within a bank of memory. A first row is activated while it is connected to the first set of buses. If it is detected that the activation of a second row connected to the first set of buses will cause a power bump when it is time to deactivate the first row, the first row is switched over to the second set of buses prior to the activation of the second row. The first row can be precharged with the voltages from the second set of buses and the second row can be activated with the voltages from the first set of buses. Thus, the first row can be precharged without being adversely effected by the power bump on the first set of buses which improves the pause performance of the DRAM.

Abstract: A memory device includes a memory array and at least two sets of row decoders to drive row lines in the memory array. Select lines (such as row select lines) carry signals to select one or more decoders in one of the two sets of decoders. At least some of the select lines are shared between the two sets of row decoders to decrease the space needed to route signal lines in the memory array.

Abstract: A leakage tolerant sense circuit for use in an electrically programmable and erasable read only memory (EEPROM) is disclosed. In a reference portion of a sense cycle, the leakage tolerant sense amplifier utilizes the sum of a reference current and any leakage current to establish a reference voltage. In the subsequent sense portion of the sense cycle, the leakage tolerant sense amplifier utilizes the sum of a memory cell current and any leakage current to establish a read voltage. The read voltage is compared with the reference voltage to determine the logic stored within the memory cell.

Abstract: Circuits for applying a programming voltage and erase voltage to memory cells in a nonvolatile memory device are disclosed. The reverse breakdown of p-n junctions within the memory cells is prevented by providing a clamping p-n junction in the path used to apply the program or erase voltage to the memory cells. The clamping p-n junction will breakdown before the p-n junctions within the memory cells, protecting the memory cells from the adverse effects of a reverse breakdown condition.