Patents by Inventor Bruce A. Block

Bruce A. Block has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11671075
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Grant
    Filed: August 20, 2020
    Date of Patent: June 6, 2023
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 11558032
    Abstract: A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 17, 2023
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 11218133
    Abstract: Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: January 4, 2022
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 11056532
    Abstract: Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 6, 2021
    Assignee: Intel Corporation
    Inventors: Han Wui Then, Marko Radosavljevic, Sansaptak Dasgupta, Paul B. Fischer, Sanaz K. Gardner, Bruce A. Block
  • Patent number: 10979012
    Abstract: Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: April 13, 2021
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Bruce A. Block, Paul B. Fischer
  • Publication number: 20200382099
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Application
    Filed: August 20, 2020
    Publication date: December 3, 2020
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 10848127
    Abstract: Techniques are disclosed for forming resonator devices using epitaxially grown piezoelectric films. Given the epitaxy, the films are single crystal or monocrystalline. In some cases, the piezoelectric layer of the resonator device may be an epitaxial III-V layer such as an Aluminum Nitride, Gallium Nitride, or other group III material-nitride (III-N) compound film grown as a part of a single crystal III-V material stack. In an embodiment, the III-V material stack includes, for example, a single crystal AlN layer and a single crystal GaN layer, although any other suitable single crystal piezoelectric materials can be used. An interdigitated transducer (IDT) electrode is provisioned on the piezoelectric layer and defines the operating frequency of the filter. A plurality of the resonator devices can be used to enable filtering specific different frequencies on the same substrate (by varying dimensions of the IDT electrodes).
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: November 24, 2020
    Assignee: INTEL CORPORATION
    Inventors: Bruce A. Block, Sansaptak Dasgupta, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 10804879
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: October 13, 2020
    Assignee: Intel Corporation
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Patent number: 10790332
    Abstract: Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: September 29, 2020
    Assignee: Intel Corporation
    Inventors: Bruce A. Block, Paul B. Fischer, Nebil Tanzi, Gregory Chance, Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic
  • Patent number: 10673405
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: June 2, 2020
    Assignee: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Bruce A. Block, Paul B. Fischer
  • Publication number: 20200119087
    Abstract: Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.
    Type: Application
    Filed: July 1, 2016
    Publication date: April 16, 2020
    Applicant: INTEL CORPORATION
    Inventors: HAN WUI THEN, MARKO RADOSAVLJEVIC, SANSAPTAK DASGUPTA, PAUL B. FISCHER, SANAZ K. GARDNER, BRUCE A. BLOCK
  • Publication number: 20190214965
    Abstract: A bulk acoustic resonator architecture is fabricated by epitaxially forming a piezoelectric film on a top surface of post formed from an underlying substrate. In some cases, the acoustic resonator is fabricated to filter multiple frequencies. In some such cases, the resonator device includes two different resonator structures on a single substrate, each resonator structure configured to filter a desired frequency. Including two different acoustic resonators in a single RF acoustic resonator device enables that single device to filter two different frequencies in a relatively small footprint.
    Type: Application
    Filed: September 30, 2016
    Publication date: July 11, 2019
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Publication number: 20190199322
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices that include a bottom electrode formed of a two-dimensional electron gas (2DEG). The disclosed FBAR devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2DEG bottom electrode may be able to achieve similar or increased carrier transport as compared to an FBAR device having a bottom electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the FBAR device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
    Type: Application
    Filed: September 30, 2016
    Publication date: June 27, 2019
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Bruce A. Block, Paul B. Fischer
  • Publication number: 20190199312
    Abstract: Techniques are disclosed for forming integrated circuit single-flipped resonator devices that include an electrode formed of a two-dimensional electron gas (2 DEG). The disclosed resonator devices may be implemented with various group III-nitride (III-N) materials, and in some cases, the 2 DEG may be formed at a heterojunction of two epitaxial layers each formed of III-N materials, such as a gallium nitride (GaN) layer and an aluminum nitride (AlN) layer. The 2 DEG electrode may be able to achieve similar or increased carrier transport as compared to a resonator device having an electrode formed of metal. Additionally, in some embodiments where AlN is used as the piezoelectric material for the resonator device, the AlN may be epitaxially grown which may provide increased performance as compared to piezoelectric material that is deposited by traditional sputtering techniques.
    Type: Application
    Filed: September 30, 2016
    Publication date: June 27, 2019
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Marko Radosavljevic, Han Wui Then, Bruce A. Block, Paul B. Fischer
  • Publication number: 20190190488
    Abstract: Techniques are disclosed for forming integrated circuit film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion and having a different resonator thickness. Each wing may also have different thicknesses from one another. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Application
    Filed: September 30, 2016
    Publication date: June 20, 2019
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Publication number: 20190190489
    Abstract: Techniques are disclosed for forming high frequency film bulk acoustic resonator (FBAR) devices having multiple resonator thicknesses on a common substrate. A piezoelectric stack is formed in an STI trench and overgrown onto the STI material. In some cases, the piezoelectric stack can include epitaxially grown AlN. In some cases, the piezoelectric stack can include single crystal (epitaxial) AlN in combination with polycrystalline (e.g., sputtered) AlN. The piezoelectric stack thus forms a central portion having a first resonator thickness and end wings extending from the central portion having a different resonator thickness. Each wing may also have different thicknesses. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate. The end wings can have metal electrodes formed thereon, and the central portion can have a plurality of IDT electrodes patterned thereon.
    Type: Application
    Filed: September 30, 2016
    Publication date: June 20, 2019
    Applicant: INTEL CORPORATION
    Inventors: Sansaptak Dasgupta, Bruce A. Block, Paul B. Fischer, Han Wui Then, Marko Radosavljevic
  • Publication number: 20190173452
    Abstract: Techniques are disclosed for forming resonator devices using epitaxially grown piezoelectric films. Given the epitaxy, the films are single crystal or monocrystalline. In some cases, the piezoelectric layer of the resonator device may be an epitaxial III-V layer such as an Aluminum Nitride, Gallium Nitride, or other group III material-nitride (III-N) compound film grown as a part of a single crystal III-V material stack. In an embodiment, the III-V material stack includes, for example, a single crystal AlN layer and a single crystal GaN layer, although any other suitable single crystal piezoelectric materials can be used. An interdigitated transducer (IDT) electrode is provisioned on the piezoelectric layer and defines the operating frequency of the filter. A plurality of the resonator devices can be used to enable filtering specific different frequencies on the same substrate (by varying dimensions of the IDT electrodes).
    Type: Application
    Filed: September 30, 2016
    Publication date: June 6, 2019
    Applicant: INTEL CORPORATION
    Inventors: BRUCE A. BLOCK, SANSAPTAK DASGUPTA, PAUL B. FISCHER, HAN WUI THEN, MARKO RADOSAVLJEVIC
  • Publication number: 20180358406
    Abstract: Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.
    Type: Application
    Filed: December 24, 2015
    Publication date: December 13, 2018
    Inventors: Bruce A. BLOCK, Paul B. FISCHER, Nebil TANZI, Gregory CHANCE, Han Wui THEN, Sansaptak DASGUPTA, Marko RADOSAVLJEVIC
  • Patent number: 10054737
    Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.
    Type: Grant
    Filed: November 15, 2016
    Date of Patent: August 21, 2018
    Assignee: INTEL CORPORATION
    Inventors: Mauro J Kobrinsky, Henning Braunisch, Shawna M. Liff, Peter L. Chang, Bruce A. Block, Johanna M. Swan
  • Publication number: 20170131469
    Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.
    Type: Application
    Filed: November 15, 2016
    Publication date: May 11, 2017
    Inventors: Mauro J. Kobrinsky, Henning Braunisch, Shawna M. Liff, Peter L. Chang, Bruce A. Block, Johanna M. Swan