Abstract: Techniques are disclosed for forming resonator devices using epitaxially grown piezoelectric films. Given the epitaxy, the films are single crystal or monocrystalline. In some cases, the piezoelectric layer of the resonator device may be an epitaxial III-V layer such as an Aluminum Nitride, Gallium Nitride, or other group III material-nitride (III-N) compound film grown as a part of a single crystal III-V material stack. In an embodiment, the III-V material stack includes, for example, a single crystal AlN layer and a single crystal GaN layer, although any other suitable single crystal piezoelectric materials can be used. An interdigitated transducer (IDT) electrode is provisioned on the piezoelectric layer and defines the operating frequency of the filter. A plurality of the resonator devices can be used to enable filtering specific different frequencies on the same substrate (by varying dimensions of the IDT electrodes).

Abstract: Techniques to fabricate an RF filter using 3 dimensional island integration are described. A donor wafer assembly may have a substrate with a first and second side. A first side of a resonator layer, which may include a plurality of resonator circuits, may be coupled to the first side of the substrate. A weak adhesive layer may be coupled to the second side of the resonator layer, followed by a low-temperature oxide layer and a carrier wafer. A cavity in the first side of the resonator layer may expose an electrode of the first resonator circuit. An RF assembly may have an RF wafer having a first and a second side, where the first side may have an oxide mesa coupled to an oxide layer. A first resonator circuit may be then coupled to the oxide mesa of the first side of the RF wafer.

Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.

Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.

Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.

Abstract: A high index contrast waveguide device is disclosed and described. In one embodiment the waveguide may include a lithium niobate substrate, a waveguide with a higher refractive index than that of the lithium niobate substrate patterned on a surface thereof, and an electrode electrically coupled to the waveguide.

Abstract: PLC architectures and fabrication techniques for providing electrical and photonic integration of a photonic components with a semiconductor substrate. In the exemplary embodiment, the PLC is to accommodate optical input and/or output (I/O) as well as electrically couple to a microelectronic chip. One or more photonic chip or optical fiber terminal may be coupled to an optical I/O of the PLC. In embodiments the PLC includes a light modulator, photodetector and coupling regions supporting the optical I/O. Spin-on electro-optic polymer (EOP) may be utilized for the modulator while a photodefinable material is employed for a mode expander in the coupling region.

Abstract: A metal-semiconductor-metal (MSM) device couples light from an optical mode in a waveguide to a surface plasmon polarition (SPP) mode on an electrode surface of the MSM device. Once in an SPP mode, the absorption of light in the semiconductor can take place in a very small area. This may allow for a shrinking of the active detector area and allow for low capacitance, very short transit distance for the electrical carriers and allow for very low voltage devices and/or very high frequency.

Abstract: Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, four-fold, five-fold, etc.). Embodiments of the invention further enable the electrode length required to create the desired electro-optic effect for the multi-segment optical waveguide to be reduced. In embodiments of the invention, certain electrodes may be “shared” amongst the different segments of the waveguide, thereby reducing the power requirement and capacitance of a device having a waveguide of a given length.

Abstract: Photonic components are placed on the processor package to bring the optical signal close to the processor die. The processor package includes a substrate to which the processor die is coupled, and which allows the processor die to connect to a printed circuit board. The processor package also includes transceiver logic, electrical-optical conversion circuits, and an optical coupler. The electrical-optical conversion circuits can include laser(s), modulator(s), and photodetector(s) to transmit and receive and optical signal. The coupler interfaces to a fiber that extends off the processor package. Multiple fibers can be brought to the processor package allowing for a scalable high-speed, high-bandwidth interconnection to the processor.

Abstract: EOP-based photonic devices employing coplanar electrodes and in-plane poled chromophores and methods of their manufacture. In an individual EOP-based photonic device, enhanced performance is achieved through in-plane poled chromophores having opposing polarities, enabling, for example, a push-pull optical modulator with reduced operational voltage and switching power relative to a conventional MZ modulator. For a plurality of EOP-based photonic devices, enhanced manufacturability is achieved through a sacrificial interconnect enabling concurrent in-plane poling of many EOP regions disposed on a substrate.

Abstract: Embodiments of the present disclosure provide optical connection techniques and configurations. In one embodiment, an opto-electronic assembly includes a first semiconductor die including a light source to generate light, and a first mode expander structure comprising a first optical material disposed on a surface of the first semiconductor die, the first optical material being optically transparent at a wavelength of the light, and a second semiconductor die including a second mode expander structure comprising a second optical material disposed on a surface of the second semiconductor die, the second material being optically transparent at the wavelength of the light, wherein the second optical material is evanescently coupled with the first optical material to receive the light from the first optical material. Other embodiments may be described and/or claimed.

Abstract: A metal-semiconductor-metal (MSM) device couples light from an optical mode in a waveguide to a surface plasmon polarition (SPP) mode on an electrode surface of the MSM device. Once in an SPP mode, the absorption of light in the semiconductor can take place in a very small area. This may allow for a shrinking of the active detector area and allow for low capacitance, very short transit distance for the electrical carriers and allow for very low voltage devices and/or very high frequency.

Abstract: PLC architectures and fabrication techniques for providing electrical and photonic integration of a photonic components with a semiconductor substrate. In the exemplary embodiment, the PLC is to accommodate optical input and/or output (I/O) as well as electrically couple to a microelectronic chip. One or more photonic chip or optical fiber terminal may be coupled to an optical I/O of the PLC. In embodiments the PLC includes a light modulator, photodetector and coupling regions supporting the optical I/O. Spin-on electro-optic polymer (EOP) may be utilized for the modulator while a photodefinable material is employed for a mode expander in the coupling region.

Abstract: The apparatus introduces a second adjustable resonant point in a QMS at a frequency that is close to a multiple of the fundamental frequency by adjusting driving point impedance characteristics of the QMS. The apparatus measures the first and second resonant point of the QMS to account for changes in the operational characteristics of the QMS.

Abstract: A metal-semiconductor-metal (MSM) device couples light from an optical mode in a waveguide to a surface plasmon polarition (SPP) mode on an electrode surface of the MSM device. Once in an SPP mode, the absorption of light in the semiconductor can take place in a very small area. This may allow for a shrinking of the active detector area and allow for low capacitance, very short transit distance for the electrical carriers and allow for very low voltage devices and/or very high frequency.

Abstract: Embodiments of the present invention describe a waveguide-based photodetector device and its methods of fabrication. The waveguide photodetector device comprises a substrate having a cladding structure formed thereon. A waveguide element for receiving optical signals is disposed within the cladding structure. A portion of the waveguide element is encapsulated by a photodetector element that detects the optical signal received by the waveguide element and generates an electrical signal based on the optical signal. Encapsulating the waveguide element in the photodetector element improves coupling efficiency and enables a waveguide photodetector device with higher speeds and higher responsivity.

Abstract: Embodiments of the invention describe a multi-segment optical waveguide that enables an optical modulator to be low-power and athermal by decreasing the device length needed for a given waveguide length. Embodiments of the invention describe an optical waveguide that is folded onto itself, and thus includes at least two sections. Thus, embodiments of the invention may decrease the device size of a modulator by at least around a factor of two if the device is folded twofold (device size may be further reduced if the modulator is folded threefold, four-fold, five-fold, etc.). Embodiments of the invention further enable the electrode length required to create the desired electro-optic effect for the multi-segment optical waveguide to be reduced. In embodiments of the invention, certain electrodes may be “shared” amongst the different segments of the waveguide, thereby reducing the power requirement and capacitance of a device having a waveguide of a given length.

Abstract: The apparatus introduces a second adjustable resonant point in a QMS at a frequency that is close to a multiple of the fundamental frequency by adjusting driving point impedance characteristics of the QMS. The apparatus measures the first and second resonant point of the QMS to account for changes in the operational characteristics of the QMS.

Abstract: On-chip decoupling capacitor structures, and methods of fabricating such decoupling capacitors are disclosed. On-chip decoupling capacitors help to reduce or prevent L di/dt voltage droop on the power grid for high surge current conditions. The inclusion of one or more decoupling capacitors on a chip, in close proximity to the power grid conductors reduces parasitic inductance and thereby provides improved decoupling performance with respect to high frequency noise. In one embodiment of the present invention, a capacitor stack structure is inserted between metal interconnect layers. Such a capacitor stack may consist of a bottom electrode/barrier; a thin dielectric material having a high dielectric constant; and a top electrode/barrier. In an alternative embodiment, the bottom electrode and/or bottom metal interconnect layer have three dimensional texture to increase the surface area of the capacitor.