Abstract: Disclosed is a large capacity hollow-type flywheel energy storage device. The energy storage device includes a hollow shaft, a vacuum chamber receiving the hollow shaft, a flywheel having a predetermined weight and disposed at an inner edge of the vacuum chamber, and a hub connecting the flywheel to the hollow shaft and disposed in the vacuum chamber to be rotatable together with the flywheel. A superconductive bearing and an electromagnet bearing are disposed inside and outside the hollow shaft, respectively, such that magnetic forces thereof can be shielded from each other. Thus, magnetic interference between the superconductive bearing and the electromagnet bearing is shielded by the magnet shield interposed therebetween, thereby preventing rotation loss by stabilizing a structural mechanism during rotation while improving design adaptability.

Abstract: The image sensor includes a substrate, an insulating structure formed on a first surface of the substrate and including a first metal wiring layer exposed by a contact hole penetrating the substrate, a conductive spacer formed on sidewalls of the contact hole and electrically connected to the first metal wiring layer, and a pad formed on a second surface of the substrate and electrically connected to the first metal wiring layer.

Abstract: In an example embodiment, the method of manufacturing an image sensor includes forming an interlayer dielectric (ILD) on a substrate. The substrate may have a plurality of pixels arranged thereon and each of the pixels includes a photoelectric conversion device configured to sense external light and generate photo charges. Furthermore, the method may include forming a metal on the ILD and removing portions of the metal to form a reflection pattern. Additionally, the method may include removing the ILD to a depth to form a trench adjacent to the reflection pattern and forming an air gap in the trench by forming oxide over the substrate such that the reflection pattern and the upper portion of the trench are covered.

Abstract: A semiconductor device capable of preventing an electrical short between contacts and their adjacent contact pads and a method of manufacturing the same are provided. A first interlayer insulating layer is formed on the semiconductor substrate including the active region. Contact pads pass through the first interlayer insulating layer and contact with the active region. Contacts are formed on the contact pads and are connected to a conductive layer disposed above the contacts. The contact pads have a height lower than a top surface of the first interlayer insulating layer such that the contact pads have smaller thickness than the first interlayer insulating layer.

Abstract: A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.

Abstract: An image sensor device includes a substrate including a light sensing, region therein and a reflective structure on a first surface of the substrate over the light sensing region. An interconnection structure having a lower reflectivity than the reflective structure is provided on the first surface of the substrate adjacent to the reflective structure. A microlens is provided on a second surface of the substrate opposite the first surface. The microlens is configured to direct incident light to the light sensing region, and the reflective structure is configured to reflect portions of the incident light that pass through the light sensing region back toward the light sensing region. Related devices and fabrication methods are also discussed.

Abstract: Provided is a flywheel structure of an apparatus for storing energy (particularly electric power), and more particularly, to a flywheel structure of an energy storage apparatus, which allows stable operation since upper and lower thrust collars are installed on an upper and lower faces of a rotor or a hub of the flywheel, respectively and the system thus can be balanced after assembly is completed in a state that all parts including the thrust collars are assembled and which can control vibration effectively since axial displacement is controlled at upper and lower sides of the center of gravity.

Abstract: A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.

Abstract: An outer rotor superconductor journal bearing that comprising modules and including an outer rotor superconductor journal bearing that cools a superconductor that is mechanically fixed to a module below a critical temperature, attains a strong magnetic fixing force in an axial direction and a radial direction, prevents the superconductor from being damaged due to a different thermal expansion between the superconductor and a cryostat when cooled, and is easier for assembling and repair and maintenance. Preferably, the outer rotor superconductor journal bearing includes a rotor in which a solid of revolution magnet is magnetized in an axis direction in an inner portion of an inner circumference thereof; and a stator comprising a cryostat in the shape of a cylinder in which a superconductor that is tightly adhered to an inner circumference of the rotor is mounted in an outer circumference of the cryostat.

Abstract: A method of fabricating an image sensor which reduces fabricating costs through simultaneous formation of capacitor structures and contact structures may be provided. The method may include forming a lower electrode on a substrate, forming an interlayer insulating film on the substrate, the interlayer insulating film may have a capacitor hole to expose a first portion of the lower electrode.

Abstract: A method of fabricating a CMOS image sensor includes forming a substrate structure that includes a first substrate, a second substrate, and an index matching layer containing nitrogen and an oxide layer between the first and second substrates, and, forming at least one light-sensing device in the second substrate, and after forming the substrate structure, forming a metal interconnection structure on a first surface of the second substrate, the first surface facing away from the first substrate, such that the at least one light sensing device is between the metal interconnection structure and the index matching layer and the oxide layer, the metal interconnection structure being electrically connected to the at least one light-sensing device.

Abstract: In a method of manufacturing a complementary metal-oxide semiconductor (CMOS) image sensor (CIS), an epitaxial layer may be formed on a first substrate including a chip area and a scribe lane area. A first impurity layer may be formed adjacent to the first substrate by implanting first impurities into the epitaxial layer. A photodiode may be formed in the epitaxial layer on the chip area. A circuit element electrically connected to the photodiode may be formed on the epitaxial layer. A protective layer protecting the circuit element may be formed on the epitaxial layer. A second substrate may be attached onto the protective layer. The first substrate may be removed to expose the epitaxial layer. A color filter layer may be formed on the exposed epitaxial layer using the first impurity layer as an alignment key. A microlens may be formed over the color filter layer.

Abstract: A CMOS image sensor includes isolation regions and a photo diode region formed in a substrate, gate electrodes formed on the substrate, impurity injection regions formed in the substrate respectively positioned between the gate electrodes and the isolation regions, silicide regions formed on upper surfaces of the gate electrodes and the impurity injection regions, a first insulating layer formed on a surface of the photodiode region and sides of the gate electrodes, a second insulating layer formed on the first insulating layer, a third insulating layer formed on the second insulating layer, an interlayer insulating layer formed to cover the third insulating layer, and via plugs vertically passing through the interlayer insulating layer and connected to the silicide regions.

Abstract: In an image sensor in which a vertical length from a photoelectric conversion element to an uppermost micro-lens is minimal, and a method of manufacturing the same, the image sensor includes a substrate, a plurality of photoelectric conversion elements, and first to n-level (where n is an integer greater than or equal to 2) metal wires. In the substrate, a sensor region and a peripheral circuit region are defined. The plurality of photoelectric conversion elements are formed in or on the substrate within the sensor region. The first to n-level metal wires are sequentially formed on the substrate. The n-level metal wires within the sensor region are of a thickness that is less than the n-level metal wires within the peripheral circuit region.

Abstract: An image sensor capable of reducing crosstalk between pixels is provided. The image sensor includes a photoelectric converter formed in a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a plurality of structures formed on the interlayer insulating layer, each of the plurality of structures including an insulating pillar, a metal interconnection formed on the insulating pillar, and a spacer formed at both sides of the metal interconnection and both sides of the insulating pillar. The plurality of structures are spaced a predetermined interval apart from each other in a longitudinal direction. The image sensor further includes an intermetal insulating layer filling spaces between the plurality of structures and covering top surfaces of the plurality of structures.

Abstract: An apparatus of setting multi-channels in a network system includes a mobile station transmitting at least one piece of channel information on a request message, wherein the request message requests to set a connection identifier for a communication service; and a control station calculating a bandwidth according to number of channels using the request message received from the mobile station and setting the calculated bandwidth as a service bandwidth of the connection identifier. The control station such as an ACR supports multi-channels through one frame structure (i.e., a communication structure of a connection identifier) and thus radio resources (e.g., bandwidth) to be provided to the mobile station are reduced.

Abstract: A semiconductor device capable of preventing an electrical short between contacts and their adjacent contact pads and a method of manufacturing the same are provided. A first interlayer insulating layer is formed on the semiconductor substrate including the active region. Contact pads pass through the first interlayer insulating layer and contact with the active region. Contacts are formed on the contact pads and are connected to a conductive layer disposed above the contacts. The contact pads have a height lower than a top surface of the first interlayer insulating layer such that the contact pads have smaller thickness than the first interlayer insulating layer.

Abstract: An image sensor includes a circuit substrate, a plurality of isolation regions, a plurality of photoelectric converters, and an insulation layer. The isolation regions are formed in a pixel region having the photoelectric converters formed therein with each photoelectric converter being electrically isolated by the isolation regions. The insulation layer is formed in a pad region with a substantially same depth as the isolation regions. The isolation region and the insulation layer are simultaneously formed for efficient fabrication of the image sensor.

Abstract: A semiconductor device capable of preventing an electrical short between contacts and their adjacent contact pads and a method of manufacturing the same are provided. A first interlayer insulating layer is formed on the semiconductor substrate including the active region. Contact pads pass through the first interlayer insulating layer and contact with the active region. Contacts are formed on the contact pads and are connected to a conductive layer disposed above the contacts. The contact pads have a height lower than a top surface of the first interlayer insulating layer such that the contact pads have smaller thickness than the first interlayer insulating layer.

Abstract: An image sensor is provided. The image sensor includes a substrate; a first isolation region, a second isolation region, a plurality of photoelectric transducer devices, a read element and a floating diffusion region. The second isolation region has a depth that is less than that of the first isolation region. The plurality of photoelectric transducer devices is isolated from one another by the first isolation region. The read element and the floating diffusion region are isolated from the photoelectric transducer devices by the second isolation region.