Abstract: An audio device and a position recognition method of the audio device are disclosed. According to an example embodiment, an audio device includes at least one infrared (IR) transceiver and a controller configured to recognize whether the audio device is positioned to a left or right of another audio device in response to a signal received by the at least one IR transceiver.

Abstract: A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a collector electrode disposed on the other surface of the substrate, a trench gate disposed in the substrate, a field diffusion junction disposed in the substrate, and a first contact connecting the trench gate and the first field plate. The first field plate has a first part extending toward the emitter electrode with respect to the first contact and having a first width, and a second part extending toward the field diffusion junction with respect to the first contact and having a second width. The second width is greater than the first width.

Abstract: An interface method for a mobile terminal includes: receiving in the order of time and saving two or more types of messages corresponding to two or more types of first applications; integrating and configuring the two or more types of messages using a second application, which integrates and manages the two or more types of first applications; and displaying the two or more types of messages with the identification information on the type of each of the messages using the second application.

Abstract: Disclosed is a dual-clock FIFO apparatus for packet transmission. The FIFO apparatus includes a multi-clock data queue which stores packets and has different read and write clock domains, a packet information queue configured to operate in the write clock domain and to store information data and a tail pointer for the packets, stored in the multi-clock data queue, when writing of packets to the multi-clock data queue is completed, a write state machine configured to operate in the write clock domain, and to read information and pointer data from the packet information queue and notify a read state machine that a packet is ready to read, and the read state machine configured to operate in a read clock domain, to determine whether a packet to be read is ready, and to monitor reading procedure of packet in the multi-clock data queue.

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Abstract: A semiconductor power device includes a substrate, a plurality of gate electrode structures, a floating well region and a termination ring region. The substrate has a first region and a second region. A plurality of gate electrode structures is formed on the substrate, each of the gate electrode structures extends from the first region to the second region and includes a first gate electrode, a second gate electrode and a connecting portion, the first and second gate electrodes extend in a first direction, and the connecting portion connects end portions of the first and second gate electrodes to each other. The floating well region is doped with impurities between the gate electrode structures in the first region of the substrate, and the floating well region has a first impurity concentration and a first depth.

Abstract: A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask pattern is patterned to provide a plurality of mask patterns that are aligned end-to-end with one another on the substrate and are separated by an exposed portion of the substrate between respective facing ends of the plurality of mask patterns. An auxiliary layer is formed to cover at least sidewalls of the facing ends to reduce a size of the exposed portion to provide a reduced exposed portion of the substrate and the reduced exposed portion of the substrate is etched to form a trench defining active patterns in the substrate aligned end-to-end with one another.

Abstract: A semiconductor device may include: a first semiconductor layer having a first band gap; a second semiconductor layer including first and second regions separately disposed on an upper surface of the first semiconductor layer and having a second band gap wider than the first band gap; and a third semiconductor layer disposed between the first and second regions of the second semiconductor layer, extending up to at least a portion of the first semiconductor layer. The third semiconductor layer may have a channel region doped with an impurity.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A semiconductor device includes a semiconductor substrate including active portions including first and second dopant regions, word lines on the substrate and extending in a first direction to intersect the active portions, first and second bit lines on the substrate and extending in a second direction to intersect the word lines, and contact structures in regions between the word lines and between the first and second bit lines when viewed from a plan view. The first and second bit lines are connected to the first dopant regions. The contact structures are in contact with the second dopant regions, respectively. The contact structures each include a contact plug and a contact pad. The contact pads contact the second dopant regions. A separation distance between the contact plugs and the first bit lines is less than separation distance between the contact pads and the first bit lines.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A semiconductor device includes a channel layer on a substrate; cell trench patterns in the channel layer; and a source pattern on the cell trench patterns. The source pattern includes: grooves, each having inclined sidewalls and bottom that extends in a horizontal direction in a portion of the channel layer between the cell trench patterns, source regions at the inclined sidewalls of the grooves, source isolation regions at the bottoms of the grooves, and a source electrode at interior regions of the grooves and that has a planar upper surface.

Abstract: Disclosed is an apparatus for spinning a test tray and an in-line test handler including the above apparatus, wherein the apparatus may include a supporting unit for supporting a test tray transported between first and second chamber units facing in the different directions, wherein the first chamber unit is provided at a predetermined interval from the second chamber unit; a base unit to which the supporting unit is spinnably connected; and a spinning unit which spins the test tray so that semiconductor devices received in the test tray are tested at the same arrangement in each of the first chamber unit and the second chamber unit.

Abstract: A high-electron-mobility transistor (HEMT) device includes a plurality of semiconductor layers formed on a substrate, wherein a two-dimensional electron gas (2DEG) layer is formed in the semiconductor layers; an etch-stop layer formed on the plurality of semiconductor layers; a p-type semiconductor layer pattern formed on the etch-stop layer; and a gate electrode formed on the p-type semiconductor layer pattern.

Abstract: A patient management server node includes: a first authenticating unit to, when an application service request including login information and profile information is received from a user terminal device, perform first authentication by determining whether or not the login information matches object information pre-registered in a patient management service DB; a second authenticating unit to parse the profile information from the application service request, and to perform the second authentication by determining whether or not the parsed profile information matches profile information of the user terminal device pre-registered in the patient management service DB; and a controller to provide an application for guiding each of specialized services for each object, and to issue identification (ID) to the user terminal device when the second authenticating unit approves the second authentication.

Abstract: Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes preparing a substrate in which a scribe lane region and a chip region are defined, forming a trench in the scribe lane region of the substrate, forming a stopper layer in a part in the trench, and forming an alignment mark material on the stopper layer.

Abstract: A broadcast signal receiving apparatus, an information appliance device and a control method thereof are disclosed. The broadcast signal receiving apparatus includes: a communicator configured to connect with a headend and receive a broadcast signal; a signal processor configured to process the broadcast signal; and a controller configured to, in response to the broadcast signal receiving apparatus entering a standby mode, control the communicator to perform an operation of maintaining a connection with the headend based on a preset period, and control the broadcast signal receiving apparatus to switch to a normal mode in response to an external event, while maintaining the connection with the headend. Thus, the connection with the headend is maintained even in the standby mode, and it is thus possible to immediately switch over from the standby mode to the normal mode, thereby decreasing the power consumption and minimizing a user's standby time.

Abstract: A method for providing a graphical user interface (GUI) to receive a user command on a touch screen, and a multimedia apparatus using the same. The method for providing a GUI includes determining whether an enlargement command for a GUI item is received, and enlarging the GUI item. Therefore, it is possible to enable a user to operate the GUI item more correctly, and to provide the superior visual effect when the GUI item is operated.

Abstract: A nitride-based semiconductor device including a substrate; a GaN-containing layer on the substrate; a nitride-containing layer on the GaN layer; a channel blocking layer on the nitride-containing layer, the channel blocking layer including a nitride-based semiconductor; a gate insulation layer on the channel blocking layer; and a gate electrode on the gate insulation layer.

Abstract: Disclosed herein is a data processing apparatus and method. The data processing apparatus includes a terminal communication unit. A first control unit extracts a command packet based on a command block wrapper packet. A first unit-side communication unit transmits the command packet to a second unit. When the first unit-side communication unit receives a data status packet, generated based on one or more data packets responding to the command packet, from the second unit, the first control unit extracts a data packet from the data status packet in response to a packet for a data transmission request of a host terminal, and wherein the terminal communication unit transmits the data packet extracted from the data status packet to the host terminal.