Abstract: A method of fabricating a monolithically integrated LED array and driving circuitry includes sequentially forming overlying layers of material on the surface of a semiconductor substrate, the layers cooperating to emit light when activated. An insulating layer is formed on the layers and the layers are isolated into an array area and driver circuitry areas with row and column dividers dividing the array area into an array of LEDs arranged in rows and columns. Row and column driver circuits are formed on the insulating layer in the driver circuitry areas and row and column buses individually couple each LED in the array to row and column driver circuits.

Abstract: A method of photoelectro-synthesizing probe arrays including the steps of providing a photoconductive layer of material having a layer of electrically conductive material on a first surface thereof and a solution of a plurality of a first oligonucleotide modified monomer positioned in electrical contact with an opposing second surface thereof such that a potential is connected therebetween. A beam of light is directed through a portion of the photoconductive layer of material to complete an electrical circuit between the layer of electrically conductive material and the solution through the portion of the photoconductive layer, whereby the monomers in the solution are electropolymerized on a surface area which is coupled into the electrical circuit by the beam of light.

Abstract: Monolithic integrated transistors and a light emitting diode matrix epitaxially grown on a semiconductor substrate. The matrix includes a plurality of LEDs organized into rows and columns, the LEDs being formed of layers of semiconductor material epitaxially grown on the substrate. A row driver for each row includes a transistor coupled to the matrix and a column driver for each column includes a complementary transistor coupled to the matrix. The transistor and the complementary transistor are each an HBT including layers of semiconductor material positioned on the semiconductor material forming the matrix.

Abstract: A method of fabricating an LED array and stacked driving circuitry includes sequentially forming layers of material on the surface of a substrate, the layers cooperating to emit light when activated. An insulating layer is positioned on the layers and divided into LEDs arranged in an array of rows and columns. Row and column driver circuits are formed on the insulating layer overlying the array by patterning portions of recrystallized amorphous silicon on the insulating layer, depositing a gate insulator layer and a gate metal layer on each of the portions to form an MOS gate, implanting a source and drain in each of the portions, using the MOS gate as a self-aligned mask, and forming contacts for the power terminals and the MOS gate, and coupling each LED in the array to the row and column driver circuits.

Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.

Abstract: A vertical cavity surface emitting laser (VCSEL) having a first and a second mirror stack and an active region is formed utilizing epitaxial layer growth techniques. A lateral photodetector is integrally formed in the epitaxial growth layers, thereby providing for a VCSEL with laterally integrated photodetector. An isolation region is formed in the epitaxial growth layers between the VCSEL and the photodetector thereby isolating the VCSEL and the lateral photodetector. The integrated VCSEL and lateral photodetector capable of monitoring reflected laser emission, thus laser power output of the VCSEL and employing feedback to maintain a specific laser power output level, thereby capable of automatic power control (APC).

Abstract: A VCSEL (113) having a first and a second stack of distributed Bragg reflectors (120, 116) and an active region (118) defining a light generating and emitting path. A layer (104) of semiconductor material is formed on the second stack (116) so as to intersect the light path and a first electrode (106) and a second electrode (108) are disposed on the layer (104) to form a metal-semiconductor-metal photodetector (102). The metal-semiconductor-metal photodetector (102) absorbs some of the light emitted by the VCSEL (113) and provides an indication of the light output intensity, which indication may be used to control the VCSEL (113).

Abstract: A matrix of light emitting devices including a voltage source constructed to repetitiously supply a multi-step voltage waveform and a matrix of rows and columns of pixels, each pixel being connected to the voltage source. A method of driving the matrix including addressing each of the pixels of the matrix by supplying scan and image data activating signals to each of the pixels, the image data activating signal being used to activate a pixel by completing a current path from the pixel to a return for the voltage source, and activating the voltage source to repetitiously supply multi-step waveforms of voltage and sequentially supply each step of each of the multi-step voltage waveforms to the pixels, and addressing each of the pixels in the matrix for each step supplied.

Abstract: A VCSEL (113) having first and second stacks of DBRs (120, 116) and an active region sandwiched therebetween (118) is formed. A PIN photo-detector is integrated onto the VCSEL by positioning it on the second stack in the light path. The PIN photo detector includes a first doped region (104), a second undoped (intrinsic) region (106), and a third doped region (108). A first conductive layer (134) is provided in contact with the second stack and the first region and a second conductive layer is provided in contact with the third region.

Abstract: A plurality of oligonucleotides are synthesized at a plurality of locations on a substrate using a plurality of dispensing bars. Each of the plurality of dispensing bars has a respective plurality of dispensing heads arranged along a respective axis. Each of the plurality of dispensing bars is operative to selectively deposit a volume of a respective one of a plurality of nucleotide bases in any of a row of locations. A positioning mechanism positions the substrate with respect to the plurality of dispensing bars. A controller controls the plurality of dispensing bars and the positioning mechanism so that, at each of the plurality of locations, a respective sequence of nucleotide bases is deposited to form a respective oligonucleotide.

Abstract: A chemical sensor includes a thin film transistor with a gate positioned on one side. An insulating layer is positioned on the opposite side and an indicator film is positioned on the insulating layer in generally opposed relationship to the gate. Induced charge in the indicator film caused by a biological or chemical species changes the channel current in the transistor. A potential on the gate is then used to null out the resulting change in channel current. The potential used to null out the current change is an extremely sensitive measure of the induced charge.

Abstract: A microcavity LED with photon recycling including a substrate having at least one layer of material positioned thereon, and a first cladding layer, a second cladding layer and an active region sandwiched therebetween forming a mesa on the layer of material. The mesa has generally vertical sides and an upper surface with an electrically conductive and light reflective system positioned on the vertical sides of the mesa and partially covering the upper surface to form a first electrical contact for the LED, the electrically conductive and light reflective system defining a centrally located light emitting opening on the surface of the mesa, the mesa having a diametric dimension of the surface greater than one time larger than a diametric dimension of the opening.

Abstract: A target molecule at a binding site is detected using an optical waveguide having a surface proximate to the binding site, and a waveguide detector coupled to the optical waveguide. An incident light beam is applied to the binding site along an axis transverse to the surface of the optical waveguide. The incident light beam impinges an optical indicator associated with the target molecule to form secondary light which is coupled into the optical waveguide. The secondary light is detected by the waveguide detector to thereby detect the target molecule.

Abstract: A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A second dielectric layer (128) is formed on surface (133) of mesa (131). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of second dielectric layer (128) of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (204) on seed layer (126) for removal of heat from VCSEL (101).

Abstract: Items of material are patterned on a substrate by forming a layer of photoresist on the substrate and a layer of metal on the photoresist. The photoresist is patterned to define an opening exposing a portion of the substrate and the metal is patterned to define an aperture smaller than the opening so as to divide the exposed surface of the substrate into shadow areas and a non-shadow area. A first material system is evaporated generally perpendicular to the aperture to form a first organic light emitting diode on the surface of the substrate in the non-shadow area and second and third material systems are evaporated at angles to the aperture to form second and third organic light emitting diodes in the shadow areas. Passivation material is evaporated perpendicularly onto the first diode and at the angle onto the second diode.

Abstract: A light emitting diode display package and method of fabricating a light emitting diode (LED) display package including a light emitting diode array on a substrate, having row and column connection pads routed to display connection pads positioned on an uppermost surface of the LED array device, a separate silicon driver device having connection pads routed to an uppermost surface, positioned to cooperatively meet those of the LED device when properly registered, the LED device flip chip bump bonded to the driver device using standard C5 DCA, an underfill layer positioned between the space defined by the LED device and the driver device. The LED display and driver device package subsequently having selectively removed the substrate onto which the LED array was initially formed. The light emitted from the LED display device, being emitted through the remaining indium-gallium-aluminum-phosphide (InGaAlP) epilayer of the LED device.

Abstract: A method of fabricating a thin film transistor device including forming first and second spaced apart control electrodes on a surface of a supporting substrate and forming a dielectric layer over the control electrodes. Inorganic and organic thin film transistors are formed on the dielectric layer, one on each control electrode. The inorganic and organic thin film transistors are n-type and p-type conductivity, respectively, and may be integrated into a complementary circuit. Also, the thin film transistor device is fabricated at relatively low temperatures so that plastic supporting substrates can be utilized.

Abstract: A substrate having a first surface and a second surface, the first surface having a vertical cavity surface emitting laser disposed therein and second surface having a photodetector integrated disposed therein, wherein the vertical cavity surface emitting laser directs a light signal toward the photodetector.

Abstract: A method for controlling carbon doping levels in a Distributed Bragg Reflectors (DBRs) for a Vertical Cavity Surface Emitting Laser (VCSELs) devices is provided. A first stack of mirrors (105) is deposited on the surface (101) of the substrate (102). A first cladding region (106) is deposited on the first stack of mirrors (105). An active layer (108) is deposited on the first cladding layer (106). A second cladding layer (109) is deposited on the active layer (108). A second stack of mirrors (111) is deposited on the second cladding layer (109) having a carbon doping level controlled by ratio of Group V containing organometallic (tertiarybutylarsine) to Group III organometallics (trimethylgallium and trimethylaluminum).

Abstract: A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.