Abstract: A first stack of distributed Bragg mirrors having alternating layers of aluminum gallium arsenide differing in concentrations of an aluminum are disposed on a surface of a substrate with a first plurality of continuous gradient layers positioned between the alternating layers of differing aluminum concentrations to dynamically move the aluminum concentration from one of the alternating layer to another alternating layers. A first cladding region is disposed on the first stack of distributed Bragg mirrors. An active region is disposed on the first cladding region with a second cladding region being dispose on the active region.

Abstract: A sensor (10,30,40,50,70) for detecting chemicals and changes in the surrounding environment utilizes a sol-gel sensor element (14,16,17,54,56,57) containing a chemical indicator. Grooves (12,13,24,52,53) are formed in a substrate (11,51). The grooves are filled with a sol-gel material having a chemical indicator, and the sol-gel is cured to adhere to the substrate (11,51). The grooves (12,13,24,52,53) are formed to facilitate optically coupling a fiber optic cable (46) to the sol-gel sensor element. Light is coupled from the fiber optic cable (46) to the sol-gel sensor element (14,16,17,54,56,57).

Abstract: A substrate (102) having a surface (103) with a first stack of distributed Bragg reflectors (106), a first cladding region (107), an active region (108), a second cladding region (109), a second stack of distributed Bragg reflectors (110), and a contact region (111) is provided. A mesa (131) with a surface (133) and a trench (136) is formed. A first dielectric layer (122) is formed overlying substrate (102) and covering a portion of trench (136). A seed layer (126) having a pattern is formed, with the pattern of seed layer (126) having an opening on a portion of mesa (131). A metal is selectively plated on seed layer (126), thereby generating a layer (304) on seed layer (126) for removal of heat of VCSEL (101).

Abstract: A method of fabricating VCSELs including the steps of epitaxially growing a first mirror stack of a first conductivity type, an active region on the first mirror stack, and a first portion of a second mirror stack of a second conductivity type on the active region. A dielectric layer is then formed on the first portion of the second mirror stack, patterned to define an operating region and a remaining portion of the second mirror stack is epitaxially grown on the first portion to form a complete second mirror stack. Portions of the second mirror stack overlying the dielectric layer are polycrystalline in formation and substantially limit the remaining portion of the second mirror stack to the operating region. The polycrystalline layers can then be removed and electrical contacts formed.

Abstract: A substrate with a surface, the surface having disposed thereon a first stack of distributed Bragg reflectors, an active area, a second stack of distributed Bragg reflectors, a contact region, and a dielectric layer is provided. A first isolation trench is formed that extends through the dielectric layer, the contact region, and into a portion of the second stack of distributed Bragg reflectors. A dielectric layer is disposed on the substrate. A second isolation trench is formed through the nitride layer, the contact region, the second stack of distributed Bragg reflectors, the active region and a portion of the first stack of distributed Bragg reflectors, wherein the second isolation trench encircles the first isolation trench. A first electrical contact is formed on the second stack of distributed Bragg reflectors and a second electrical contact is formed on the contact region.

Abstract: A top-emitting vertical cavity surface emitting laser with a current blocking layer at the substrate and offset layers in the mirror stack providing an optical waveguide aligned to the injected current distribution.

Abstract: A VCSEL having a first mirror stack positioned on the surface of a substrate, an active region positioned on the first mirror stack and substantially coextensive therewith, and a second mirror stack positioned on the active region, the second mirror stack forming a ridge or mesa having a side surface. A metal contact layer is positioned on the side surface of the ridge or mesa and on portions of an end of the ridge or mesa to define a light emitting area, and a layer of diamond-like material is electrolytically plated on the metal contact layer so as to form a heat conductor to remove heat from the laser.

Abstract: A method of altering a refractive index, as for an optical waveguide, as in a buried heterostructure laser, by inducing disordering in a region of a semiconductor body comprises exposing a surface portion of the semiconductor body to plasma etching, coating at least a part of the surface portion with an oxide layer, heat treating the semiconductor body.

Abstract: A vertical cavity laser with unstable resonator including a substrate having opposed major surfaces with a first semiconductor mirror stack positioned on one major surface of the substrate, an active region positioned on the first stack and a second semiconductor mirror stack positioned on the active region so as to sandwich the active region between the first and second stacks. Layers of the second stack being etched so as to spatially modulate the thickness of the second stack such that reflectivity is reduced in a central portion of the second stack and increases toward an edge thereof.

Abstract: An inverted drive optical interconnect link including an optical transmitter module designed to change input bits of logical value one to output bits of logical value zero and vice-versa, an optical receiver module designed to change input bits of logical value zero to output bits of logical value one and vice-versa, and an optical waveguide connected to the transmitter module and to the receiver module so that electrical signals input to the transmitter module are faithfully reproduced at an electrical output of the receiver module.

Abstract: A high efficiency vertical cavity surface emitting laser with first and second mirror stacks and an active area sandwiched therebetween. The second mirror stack is formed into a mesa with exposed end surface and outer sidewalls and a centrally located light emission region. A portion of the mesa adjacent the exposed outer sidewalls has a reduced electrical conductance so as to spread operating current from the outer sidewalls into the centrally located light emission region. The electrical conductance of the portion is reduced by oxidizing or etching the outer sidewalls.

Abstract: A method of manufacturing a closed cavity LED including forming, on a substrate, a short cavity LED with electrically conductive layers on opposite ends. Depositing a transparent conductive layer of material over one electrically conductive layer and affixing glass or a diamond film over the transparent conductive layer to define and protect a light output area. Removing the substrate and covering the top and sides of the cavity with dielectric material and contact metal. The metal being in contact with the transparent conductive layer and the other electrical contact layer. Thus, a reflector covers the cavity in all directions except the light output area to increase external efficiency.

Abstract: A heterostructure device includes a ridge-waveguide laser monolithically integrated with a ridge-waveguide rear facet monitor (RFM). An integral V-groove etched directly into the device substrate enables passive alignment of an optical fiber to the active region of the laser. The laser and RFM facets were formed using an in-situ multistep reactive ion etch process.

Abstract: A VCSEL including a first mirror stack, an active region and a second mirror stack positioned on a substrate with portions of the active region and the first and second mirror stacks being offset from surrounding portions by an offset area in the surface of the substrate so as to define a lateral waveguide which confines the operating region of the VCSEL. The surrounding portions of the second mirror stack are removed to provide current control and refractory metal contacts are formed on the upper and lower surfaces. Methods of fabricating the offset as a depression or a mesa in the surface of the substrate and the resulting VCSEL are disclosed.

Abstract: A vertical cavity surface emitting laser (VCSEL) having sensing capabilities is fabricated by forming a layer having the capability to change the threshold current of the VCSEL. This can be accomplished by forming a deformable membrane or a cantilevered beam on the VCSEL. The deformation of movement of the beam causes a change in the threshold current of the VCSEL, so that it can go from lasing to nonlasing or vice versa. In addition, a layer which changes reflectivity in the presence of a particular chemical can also be formed on the VCSEL to produce the same result.

Abstract: A VCSEL formed on a substrate with an upper mirror stack etched to form a mesa shaped area with material positioned on the upper mirror stack including optically transparent, electrically conductive material defining an electrical contact window to control current distribution within the laser, and material positioned on the surface of the mesa shaped area with an optical thickness selected to provide a desired mirror reflectivity profile which controls the optical mode independently of the mesa edges, thereby, providing separate control of the current and the optical mode.

Abstract: A top emitting vertical cavity surface emitting laser with an etch stop layer positioned in the top mirror stack so the stack can be etched to form a trench surrounding a mesa with the emitting area on the mesa and the trench confining current flow and lasing to the mesa.

Abstract: A vertical cavity surface emitting laser with temperature insensitive threshold current is constructed with a peak gain at a predetermined wavelength and with a Fabry-Perot resonance at a wavelength higher than the predetermined wavelength of the peak gain. As operating temperatures rise the peak gain is reduced but the Fabry-Perot mode moves closer to the peak gain to maintain the current substantially constant.

Abstract: A method of forming a III-V semiconductor device (10, 20) utilizes a III-V semiconductor substrate (11) having a plurality of III-V semiconductor layers (12, 14, 15, 16, 17). A pattern layer ( 19, 24) is formed on the plurality of layers (12, 14, 15, 16, 17). The plurality of III-V semiconductor layers (12, 14, 15, 16, 17) is etched with an isotropic etch that does not etch the pattern layer (19, 24). The isotropic etch undercuts the pattern layer (19, 24) and exposes an area for forming ohmic contacts on the plurality of III-V semiconductor layers. The pattern layer (19, 24) is used as a mask while depositing ohmic contact material (22, 23, 28) onto the area for forming ohmic contacts.

Abstract: VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and an oxygen implant in the trench confines current distribution to maximize power output and efficiency. The trench allows self-alignment throughout most of the manufacturing process.