Abstract: In a program method for a multi-level phase change memory device, multi-level data to be programmed in a selected memory cell is received, and a program signal is applied to the selected memory cell according to the received multi-level data. Herein, a rising time of the program signal is set to be longer than a falling time of the program signal.

Abstract: A method of manufacturing a semiconductor device includes forming a plurality of gate structures including a metal on a substrate having an isolation layer, forming first insulating interlayer patterns covering sidewalls of the gate structures, forming first capping layer patterns and a second capping layer pattern on the gate structures and the first insulating interlayer patterns, the first capping layer patterns covering upper faces of the gate structures, and the second capping layer pattern overlapping the isolation layer, partially removing the first insulating interlayer patterns using the first and the second capping layer patterns as etching masks to form first openings that expose portions of the substrate, forming metal silicide patterns on the portions of the substrate exposed in the forming of the first openings, and forming conductive structures on the metal silicide patterns.

Abstract: In a method of manufacturing a semiconductor device, a first etching mask and a second etching mask are formed sequentially on a metal gate structure on a substrate and a first insulating interlayer covering a sidewall of the metal gate structure respectively. An opening is formed to expose a top surface of the substrate by removing a portion of the first insulating interlayer not overlapped with the first etching mask or the second etching mask. A metal silicide pattern is formed on the exposed top surface of the substrate. A plug on the metal silicide pattern is formed to fill a remaining portion of the opening. Further, a planarization layer may be used as the second etching mask.

Abstract: A solar cell device having an airbridge type contact and the method of forming the same are provided. The solar cell device includes a semiconductor layer for turning light into electric current; at least two conductive line sections for transmitting the electric current from the semiconductor layer and formed on the semiconductor layer; and an airbridge type contact interposing between the two conductive line sections and connecting thereto, wherein a space under the airbridge type contact and between the two conductive line sections is formed, and light is allowed to enter the semiconductor layer by passing through the space.

Abstract: The present invention relates to an aerodynamic dead zone-less triple-rotor integrated wind power driven system wherein control rotor 81 disposed at up-wind is rotated at a high speed. It induced the air flowing into the hub of extenders 71 of the auxiliary rotor 71 to the outside of the extenders 71-1 of the auxiliary rotor 71, thereby forming an aerodynamic annular stream tube zone and increasing the air density therein, the main rotor 11 disposed at down-wind, is aerodynamically accelerating and improving the system efficiency. In addition, the rotor 52 and stator 51 of the electromagnetic attraction dragging rotational torque of the auxiliary generator by the load assists to rotate main rotor 11, thereby the triple rotors integrating rotational torque generates the twin generators 4 and 4-1? of the wind turbine.

Abstract: A photodiode device and the manufacturing method of the same are provided. The photodiode device includes a substrate; an epitaxy layer on the substrate, the epitaxy layer including a window layer and a cap layer on the window layer, the cap layer covering a portion of the window layer; and a patterned conductive layer on the cap layer, the patterned conductive layer being formed with a bottom area and a top area wherein the bottom area is greater than the top area.

Abstract: Provided is a method and apparatus for generating a network attack signature capable of generating a signature having a high reliability while minimizing a whitelist used to prevent false positive. An application header and application data are separated from each other to measure byte distributions of the application header and the application data from an input packet. When an attack signature is generated by analyzing the measured byte distributions, a substring of the application data is used to generate the attack signature, and a substring of the application header is used as supporting information on the signature.

Abstract: A multi-junction solar cell structure includes a supporting substrate, a Group IV element-based thin film, and a Group III-V element-based thin film sequentially stacked on the supporting substrate. When the multi-junction solar cell structure is active, the Group III-V element-based thin film contacts the light before the Group IV element-based thin film does. The Group IV element-based thin film includes a first solar cell and the Group III-V element-based thin film includes a second solar cell, wherein the band gap of the first solar cell is lower than the band gap of the second solar cell.

Abstract: An array substrate for IPS mode LCD device includes first and second gate lines on a substrate including first and second pixel regions; a first common connection pattern in an upper side of each of the first and second pixel regions; first and second outmost common electrodes extending from the first common connection pattern; first and second data lines crossing the first and second gate lines, the first and second pixel regions adjacent to each other along the first and second data lines; a TFT connected to the first gate line and the first data line pixel electrodes; a pixel connection pattern connected to the drain electrode common electrodes alternately arranged with the pixel electrodes; and a second common connection pattern at a lower side of the pixel regions and connected to the second outmost common electrode.

Abstract: A nano imprint apparatus comprising: a nano imprint template; and a deformation correction unit arranged on the nano imprint template to correct deformation of the nano imprint template.

Abstract: Disclosed herein are a mobile terminal and a method for displaying information using the same. A mobile terminal includes a display unit that displays information or applications processed in the mobile terminal on a display panel; and a control unit that controls the information or applications displayed on the display unit to be rotated at an angle with respect to the display panel and controls additional information or applications to be displayed on portions about the displayed information or applications produced by the rotation if a reference signal is inputted to the mobile terminal.

Abstract: Method and apparatus for collecting evidence are provided. An exemplary embodiment enhances accuracy and efficiency of collecting evidence by analyzing link information in the target computer and collecting collection target file. And the exemplary embodiment can collect evidence from a target computer as well as from a remote computer through analyzing the link information in the target computer, identifying the path of collection target file and extracting the target file.

Abstract: A photodiode device and methods of manufacturing the same are provided. The photodiode device comprises a light adsorption layer defining a light-facing side and a back-light side; a via passing through the adsorption layer, the via defining a side wall and a bottom surface; a conformal isolation layer covering the side wall and the bottom surface; a first patterned conductive layer disposed on the back-light side, the first patterned conductive layer having a first portion covering a first portion of the conformation isolation layer; a second patterned conductive layer disposed on the light-facing side of the adsorption layer; and an opening through the conformal isolation layer, wherein the opening is filled with the second patterned conductive layer such that the second patterned conductive layer is connected with the first portion of the first patterned conductive layer.

Abstract: A method of manufacturing photodiode device includes the following steps: providing a wafer having a substrate and an epitaxy layer, the substrate having a first surface and a second surface and the epitaxy layer formed on the first surface; forming a first conductive layer on the second surface of the substrate; forming a patterned conductive layer above the epitaxy layer; and etching the patterned conductive layer by a reactive ion etching (RIE) process performed under argon gas and helium gas.

Abstract: A system for recognizing a text image in an image photographed by an image sensor as characters, searching the characters in an electronic dictionary, and displaying a search result on a window. The image sensor includes a photographing section configured to photograph an image; a determination section configured to determine the photographed image as at least one of a text image region and a non-text image region; and a conversion section configured to convert information of the determined text image region into binary information.

Abstract: Provided is a phase-change memory device including a phase-change material pattern of which strips are shared by neighboring cells. The phase-change memory device includes a plurality of bottom electrodes arranged in a matrix array. The phase-change material pattern is formed on the bottom electrodes, and the strips of the phase-change material pattern are electrically connected to the bottom electrodes. Each strip of the phase-change material pattern is connected to at least two diagonally neighboring bottom electrodes of the bottom electrodes.

Abstract: An image sensor for detecting a counterfeit bill includes an ultraviolet ray emitting section for emitting ultraviolet rays to a bill to be checked; an image sensor section for acquiring a first image as an image obtained by photographing the bill to be checked in a state in which ultraviolet rays are not emitted by turning off the ultraviolet ray emitting section, and a second image as an image obtained by photographing the bill to be checked in a state in which ultraviolet rays are emitted by turning on the ultraviolet ray emitting section; a storing section for storing the first image and the second image; and a counterfeit bill detecting section for extracting a fluorescent image by removing the first image from the second image stored in the storing section and determining whether the bill to be checked is a counterfeit bill or an original bill.

Abstract: A flat panel display device which is capable of preventing in-line shorts by forming as a face plate a common power line impressing an equal power supply to all pixels. The flat panel display includes a power supply layer formed on an insulation substrate and connected with source/drain electrodes through contact holes; and an insulating layer formed with a contact hole to insulate the power supply layer and a thin film transistor, wherein the thin film transistor is formed over the insulating layer and includes the source/drain electrodes.

Abstract: A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane.

Abstract: An array substrate for IPS mode LCD device includes first and second gate lines on a substrate including first and second pixel regions; a first common connection pattern in an upper side of each of the first and second pixel regions; first and second outmost common electrodes extending from the first common connection pattern; first and second data lines crossing the first and second gate lines, the first and second pixel regions adjacent to each other along the first and second data lines; a TFT connected to the first gate line and the first data line pixel electrodes; a pixel connection pattern connected to the drain electrode common electrodes alternately arranged with the pixel electrodes; and a second common connection pattern at a lower side of the pixel regions and connected to the second outmost common electrode.