Patents by Inventor Chandra Joshi
Chandra Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9909221Abstract: The invention is directed to a method for producing metal-containing particles, the method comprising subjecting an aqueous solution comprising a metal salt, Eh, lowering reducing agent, pH adjusting agent, and water to conditions that maintain the Eh value of the solution within the bounds of an Eh-pH stability field corresponding to the composition of the metal-containing particles to be produced, and producing said metal-containing particles in said aqueous solution at a selected Eh value within the bounds of said Eh-pH stability field. The invention is also directed to the resulting metal-containing particles as well as devices in which they are incorporated.Type: GrantFiled: March 12, 2014Date of Patent: March 6, 2018Assignee: UT-BATTELLE, LLCInventors: Ji-Won Moon, Hyunsung Jung, Tommy Joe Phelps, Chad E. Duty, Ilia N. Ivanov, Pooran Chandra Joshi, Gerald Earle Jellison, Jr., Beth Louise Armstrong, Sean Campbell Smith, Adam Justin Rondinone, Lonnie J. Love
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Publication number: 20170084246Abstract: An electronic system having an assembly of a plurality of electronic devices each driven by a local power unit and a power sequencer control circuit for controlling the power on or off operation of the local power units. The electronic devices can be for example display units of a display wall. An advantage of such an assembly, e.g. a tiled display or display wall, is that a low level or as little energy as possible is dissipated by the local power units such as DC power supplies associated with the electronic devices, e.g. tiles of a display, and the associated “housekeeping” electronics. A further advantage is a limitation of the inrush current at start-up.Type: ApplicationFiled: May 13, 2015Publication date: March 23, 2017Applicants: BARCO NV, BARCO CONTROL ROOMS GMBHInventors: Mahesh Chandra JOSHI, Marcos OTERO-GENSHEIMER, Subhash Chandra DHYANI
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Publication number: 20170006695Abstract: The present invention relates to method and device invention made in SS316LN for tuning single-cell or multi-cell SCRF cavity for precise slow and fast tuning with low hysteresis. The tuning mechanism (device) for SCRF cavity consists of two thick square flanges connected to each other through two parallel sets of X-link levers pivoted in between such that the motion of top end of flange and bottom end of flange equalizes; wherein the top end of X-link connects one square flange to the bottom end of the other square flange and vice-versa using thin flat flexure plates; wherein the flexure plates are joined on X-link and square flange by bolts having spring locks; the square flanges have platform on the top that transfer motion and these are connected through power screw mechanism; wherein the power screw for linear actuation is rotated using worm-wheel.Type: ApplicationFiled: March 2, 2015Publication date: January 5, 2017Inventors: Vikas Kumar Jain, Girdhar Mundra, Satish Chandra Joshi, Parshotam Dass Gupta
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Patent number: 9222169Abstract: A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z?0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.Type: GrantFiled: May 18, 2009Date of Patent: December 29, 2015Assignee: Sharp Laboratories of America, Inc.Inventors: Pooran Chandra Joshi, Apostolos T. Voutsas
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Publication number: 20150113221Abstract: A first processor receives a write request from an input/output (I/O) device connected to the first processor. The first processor determines whether the write request satisfies an allocating write criterion. Responsive to determining that the write request satisfies the allocating write criterion, the first processor writes data associated with the write request to a cache of the first processor.Type: ApplicationFiled: March 15, 2013Publication date: April 23, 2015Inventors: Herbert Hum, Chandra Joshi, Rahul Pal, Luke Chang
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Patent number: 8958254Abstract: An 8T memory bit cell receives a clock signal and read and write address signals. A read address latch/clock circuit receives the clock signal and the read address signals and initiates a read operation during a first clock cycle state. A write address flip-flop/clock circuit receives the clock signal and the write address signals and initiates a write operation during a second clock cycle state. An inverter receives and inverts the clock signal and applies the inverted clock signal to the write address flip-flop/clock circuit. The read address latch/clock circuit initiates a read word line precharge operation during the second clock cycle state and a write word line precharge operation during the first clock cycle state. The write address flip-flop/clock circuit may also include a loose self-timer to end a write cycle is a clock signal continues beyond a predetermined time.Type: GrantFiled: February 22, 2012Date of Patent: February 17, 2015Assignee: Texas Instruments IncorporatedInventors: Manish Chandra Joshi, Parvinder Kumar Rana, Lakshmikantha Vakwadi Holla
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Publication number: 20140273147Abstract: The invention is directed to a method for producing metal oxide particles, the method comprising subjecting non-oxide metal-containing particles to an oxidation step that converts the non-oxide metal-containing particles to said metal oxide particles. The invention is also directed to the resulting metal oxide compositions. In particular embodiments, non-oxide precursor particles are produced by microbial means, and the produced non-oxide precursor particles subjected to oxidation conditions under elevated temperature conditions (e.g., by a thermal pulse) to produce metal oxide particles or a metal oxide film.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Inventors: Pooran Chandra Joshi, Chad E. Duty, Gerald Earle Jellison, Jr., Ilia N. Ivanov, Beth Louise Armstrong, Ji-Won Moon, Hyunsung Jung, Adam Justin Rondinone, Tommy Joe Phelps
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Publication number: 20140262811Abstract: The invention is directed to a method for producing metal-containing particles, the method comprising subjecting an aqueous solution comprising a metal salt, Eh, lowering reducing agent, pH adjusting agent, and water to conditions that maintain the Eh value of the solution within the bounds of an Eh-pH stability field corresponding to the composition of the metal-containing particles to be produced, and producing said metal-containing particles in said aqueous solution at a selected Eh value within the bounds of said Eh-pH stability field. The invention is also directed to the resulting metal-containing particles as well as devices in which they are incorporated.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Inventors: Ji-Won Moon, Hyunsung Jung, Tommy Joe Phelps, JR., Chad E. Duty, Ilia N. Ivanov, Pooran Chandra Joshi, Gerald Earle Jellison, JR., Beth Louise Armstrong, Sean Campbell Smith, Adam Justin Rondinone, Lonnie J. Love
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Publication number: 20130215689Abstract: An 8T memory bit cell receives a clock signal and read and write address signals. A read address latch/clock circuit receives the clock signal and the read address signals and initiates a read operation during a first clock cycle state. A write address flip-flop/clock circuit receives the clock signal and the write address signals and initiates a write operation during a second clock cycle state. An inverter receives and inverts the clock signal and applies the inverted clock signal to the write address flip-flop/clock circuit. The read address latch/clock circuit initiates a read word line precharge operation during the second clock cycle state and a write word line precharge operation during the first clock cycle state. The write address flip-flop/clock circuit may also include a loose self-timer to end a write cycle is a clock signal continues beyond a predetermined time.Type: ApplicationFiled: February 22, 2012Publication date: August 22, 2013Applicant: Texas Instruments IncorporatedInventors: Manish Chandra Joshi, Parvinder Kumar Rana, Lakshmikantha Vakwadi Holla
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Patent number: 8349745Abstract: A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.Type: GrantFiled: November 10, 2008Date of Patent: January 8, 2013Assignee: Sharp Laboratory of America, Inc.Inventors: Pooran Chandra Joshi, Hao Zhang, Jiandong Huang, Apostolos T. Voutsas
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Publication number: 20120245049Abstract: A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.Type: ApplicationFiled: June 5, 2012Publication date: September 27, 2012Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele, Andrei Gindilis
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Patent number: 8236571Abstract: A method of producing a precursor, active-matrix, fluid-assay micro-structure including the steps of (1) utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of non-functionalized pixels, and (2) preparing at least one of these pixels for individual, digitally-addressed (a) functionalization, and (b) reading out, ultimately, of completed assay results.Type: GrantFiled: July 10, 2007Date of Patent: August 7, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele
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Patent number: 8236245Abstract: A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.Type: GrantFiled: July 10, 2007Date of Patent: August 7, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele
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Patent number: 8236244Abstract: A digitally-addressable, pixelated, DNA fluid-assay, active-matrix micro-structure formed, utilizing low-temperature TFT and Si technology, on a substrate preferably made of glass or plastic, and including at least one pixel which is defined by (a) an addressable pixel site, (b) a sensor home structure disposed within that site for receiving and hosting a functionalized assay site possessing a DNA oligonucleotide probe, and (c) an addressable, pixel-site-specific, energy-field-producing functionalizer (preferably optical) operable to functionalize such a probe on the assay site. Each pixel may also include a pixel-integrated optical detector. Further disclosed are related methodology facets involving (1) the making of such a micro-structure (a) in a precursor form (without a functionalized probe), and thereafter (b) in a finalized/functionalized form (with such a probe), and (2) the ultimate use of a completed micro-structure in the performance of a DNA assay.Type: GrantFiled: July 10, 2007Date of Patent: August 7, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele
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Patent number: 8231831Abstract: A pixel-by-pixel digitally-addressable, pixelated, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one functionalized, digitally-addressable assay sensor including at least one functionalized, digitally-addressable assay site which has been affinity-functionalized to respond to a selected, specific fluid-assay material, and (b) disposed operatively adjacent that sensor and its associated assay site, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the sensor and its associated assay site, a selected, ambient, electromagnetic field environment which is structured to assist, selectively and optionally only, in the reading-out of an assay-result response from the assay sensor and assay site.Type: GrantFiled: July 10, 2007Date of Patent: July 31, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele
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Patent number: 8232108Abstract: A method for producing an active-matrix, fluid-assay micro-structure including, utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of digitally-addressable, assay-material-specific-functionalizable pixels, and employing pixel-specific digital addressing for selected, array-established pixels, individually functionalizing these pixels.Type: GrantFiled: July 10, 2007Date of Patent: July 31, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele
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Patent number: 8232109Abstract: A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.Type: GrantFiled: July 31, 2007Date of Patent: July 31, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: John W. Hartzell, Pooran Chandra Joshi, Paul J. Schuele, Andrei Gindilis
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Patent number: 8133822Abstract: A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.Type: GrantFiled: August 22, 2008Date of Patent: March 13, 2012Assignee: Sharp Laboratories of America, Inc.Inventors: Jiandong Huang, Pooran Chandra Joshi, Hao Zhang, Apostolos T. Voutsas
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Optical waveguide amplifier using high quantum efficiency silicon nanocrystal embedded silicon oxide
Patent number: 8054540Abstract: A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip.Type: GrantFiled: October 28, 2008Date of Patent: November 8, 2011Assignee: Sharp Laboratories of America, Inc.Inventors: Jiandong Huang, Pooran Chandra Joshi, Hao Zhang, Apostolos T. Voutsas -
Patent number: 8007332Abstract: A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm2) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cm2 at an applied electric field lower than 3 MV/cm.Type: GrantFiled: August 7, 2008Date of Patent: August 30, 2011Assignee: Sharp Laboratories of America, Inc.Inventors: Pooran Chandra Joshi, Jiandong Huang, Apostolos T. Voutsas