Abstract: One embodiment provides a graphics processor device that includes circuitry configured to detect a connection of a second display device to a display subsystem of the graphics processor while a first display device of the graphics subsystem is active, write pre-determined pixel data to a reserved portion of memory associated with the display subsystem, configure timings for the second display device while resources allocated to the first display device remain available to the first display device, display the pre-determined pixel data from the reserved portion of the memory on the second display device during reallocation of the resources of the display subsystem to enable output the framebuffer data to the second display device, and transition the second display device from the display of the pixel data in the reserved portion of the memory to the display of the framebuffer data after resources of the display subsystem are reallocated.

Abstract: Embodiments include semiconductor packages and a method to form such packages. A semiconductor package includes first, second, and third microelectronic devices on a package substrate. The first microelectronic device has a top surface substantially coplanar to a top surface of the second microelectronic device. The third microelectronic device has a top surface above the top surfaces of the first and second microelectronic devices. The semiconductor package includes a first conductive layer on the first and second microelectronic devices, and a second conductive layer on the third microelectronic device. The second conductive layer has a thickness less than a thickness of the first conductive layer, and a top surface substantially coplanar to a top surface of the first conductive layer. The semiconductor includes thermal interface materials on the first and second conductive layers. The first and second conductive layers are comprised of copper, silver, boron nitride, or graphene.

Abstract: Examples provide on-time delivery prediction generation using a machine learning element for orders obtained from an order management component. The obtained order is analyzed to identify a plurality of order attributes. An initial value for each order attribute in the plurality of order attributes is calculated based on sensor data and telemetry data. An initial order-score for the obtained order is determined based on the initial values for each order attribute in the plurality of order attributes. An alternative order-score for the order is calculated after identifying an order attribute variable for the order and calculating updated values for each order attributes in the plurality of order attributes. After outputting the initial order-score and the alternative order-score for the order, with an indication of the order attribute variable associated with the alternative order-score, feedback for the order is received.

Abstract: Embodiments include a semiconductor package with a thermoelectric cooler (TEC), a method to form such semiconductor package, and a semiconductor packaged system. The semiconductor package includes a die with a plurality of backend layers on a package substrate. The backend layers couple the die to the package substrate. The semiconductor package includes the TEC in the backend layers of the die. The TEC includes a plurality of N-type layers, a plurality of P-type layers, and first and second conductive layers. The first conductive layer is directly coupled to outer regions of bottom surfaces of the N-type and P-type layers, and the second conductive layer is directly coupled to inner regions of top surfaces of the N-type and P-type layers. The first conductive layer has a width greater than a width of the second conductive layer. The N-type and P-type layers are directly disposed between the first and second conductive layers.

Abstract: An IC package, comprising a first IC component comprising a first interconnect on a first surface thereof; a second IC component comprising a second interconnect on a second surface thereof. The second component is above the first component, and the second surface is opposite the first surface. A thermoelectric cooling (TEC) device is between the first surface and the second surface. The TEC device is electrically coupled to the first interconnect and to the second interconnect.

Abstract: Embodiments disclosed herein include semiconductor dies and methods of forming such dies. In an embodiment, the semiconductor die comprises a semiconductor substrate, an active device layer in the semiconductor substrate, where the active device layer comprises one or more transistors, an interconnect layer over a first surface of the active device layer, a first bonding layer over a surface of the semiconductor substrate, a second bonding layer secured to the first bonding layer, and a heat spreader attached to the second bonding layer.

Abstract: Examples described herein relate to a network interface device. In some examples, packet processing circuitry in the network interface device is to receive a first packet and based on the first packet being associated with an identifier for which an entry is not present in a look-up table accessible to the packet processing circuitry, the packet processing circuitry is to provide the identifier for the first packet and an action for the identifier of the first packet and cause the first packet to configure a second look-up-table accessible to the packet processing circuitry with the action for the identifier.

Abstract: A method and a system of deploying an ignition interlock device (IID). The method comprises receiving a time series of breath alcohol content (BrAC) measurements that are unitarily sourced from a pre-identified user, each BrAC measurement of the time series including an alveolar breath component and an interferent breath component; estimating a dissipation rate of alcohol attributable to the pre-identified user in accordance with the time series of BrAC measurements; determining, responsive to estimating the dissipation rate of alcohol, at least a subset of the BrAC measurements as being based on the alveolar breath component but not the interferent breath component; and performing one of triggering and not triggering the IID into a lockout state based on the at least a subset of the BrAC measurements.

Abstract: An example microelectronic assembly includes a substrate, a bridge die over the substrate, and a die stack between the substrate and the bridge die, the die stack including a logic die and at least one memory die, where the logic die is between the at least one memory die and the bridge die.

Abstract: Embodiments of the disclosure include an electrical assembly. The electrical assembly can include a converter including a DC side and an AC side, the DC side configured for connection to a DC network, the AC side configured for connection to an AC network, the converter including at least one switching element; a circuit interruption device operably connected to the AC side of the converter; a DC voltage modification device operably connected to the DC side of the converter, the DC voltage modification device including a DC chopper; and a controller configured to selectively control the or each switching element, the circuit interruption device and the DC voltage modification device, wherein the controller is configured to be responsive to a converter internal fault by carrying out a fault operating mode.

Abstract: Integrated circuit IC package with one or more IC dies including solder features that are thermally coupled to the IC. The thermally coupled solder features (e.g., bumps) may be electrically insulated from solder features electrically coupled to the IC, but interconnected with each other by one or more metallization layers within a plane of the IC package. An in-plane interconnected network of thermal solder features may improve lateral heat transfer, for example spreading heat from one or more hotspots on the IC die. An under-bump metallization (UBM) may interconnect two or more thermal solder features. A through-substrate via (TSV) metallization may interconnect two or more thermal solder features. A stack of IC dies may include thermal solder features interconnected by metallization within one or more planes of the stack.

Abstract: A network where FC and Ethernet storage traffic share the underlying network. The network extends FC SAN storage specific attributes to Ethernet storage devices. The network is preferably formed of FC switches, so each edge switch acts as an FCoE FCF, with internal communications done using FC. IP packets are encapsulated in FC packets for transport. Preferably, either each outward facing switch port can be configured as an Ethernet or FC port, so devices can be connected as desired. FCoE devices connected to the network are in particular virtual LANs (VLANs). The name server database is extended to include VLAN information for the device and the zoning database has automatic FCOE_VLAN zones added to provide a mechanism for enhanced soft and hard zoning. Zoning is performed with the conventional zoning restrictions enhanced by including the factor that any FCoE devices must be in the same VLAN.

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

Abstract: A thermal interface structure for facilitating heat transfer from an integrated circuit device to a heat dissipation device may be fabricated to include at least one conductive wire structure wherein each conductive wire structure includes a conductive wire having a first end, a first barrier layer adjacent the first end of the conductive wire, and a first solder structure adjacent the first barrier layer. The thermal interface structure may further include an encapsulation material substantially encapsulating each conductive wire structure and a first solder layer abutting the encapsulation material and abutting the first solder structure of each conductive wire structure.

Abstract: An integrated circuit (IC) package comprises a substrate comprising a dielectric and a thermal conduit that is embedded within the dielectric. The thermal conduit has a length that extends laterally within the dielectric from a first end to a second end. An IC die is thermally coupled to the first end of the thermal conduit. The IC die comprises an interconnect that is coupled to the first end of the thermal conduit. An integrated heat spreader comprises a lid over the IC die and at least one sidewall extending from the edge of the lid to the substrate that is thermally coupled to the second end of the thermal conduit.

Abstract: Embodiments herein relate to systems, apparatuses, processing, and techniques related to a first heat-conducting plate to be thermally coupled to a first heat source, a thermoelectric cooler (TEC) thermally coupled to the first plate, a second heat-conducting plate thermally coupled to the TEC and to be thermally coupled to a second heat source where the TEC is to at least partially thermally isolate the first plate from the second plate to reduce heat transfer from the first plate to the second plate.

Abstract: Disclosed herein are thermal assemblies for multi-chip packages (MCPs), as well as related methods and devices. For example, in some embodiments, a thermal assembly for an MCP may include a heat pipe having a ring shape.

Abstract: An integrated heat spreader includes channel structures assembled in a frame. Each channel structure is independent of the other, and can be used to dissipate heat from integrated circuitry at a specific location within a package, and without allowing heat from that particular location to propagate to integrated circuitry at other locations within the package. Each channel structure can be implemented with metal having a high thermal conductivity (e.g., copper). The channel structures can be used in conjunction with liquid-based cooling or air-based cooling. The frame can be implemented with low thermal conductivity molding compound or plastic so the heat transfer from one channel structure to another is inhibited. The channel structures can have different configurations (e.g., straight, pillars, and/or pin fins) to provide different rates of flow, mixing, and/or cooling. The flow direction of air or liquid for the channel structures can be the same (parallel) or different (counter).

Abstract: A method and a system of deploying an ignition interlock device (IID). The method comprises receiving a time series of breath alcohol content (BrAC) measurements that are unitarily sourced from a pre-identified user, each BrAC measurement of the time series including an alveolar breath component and an interferent breath component; estimating a dissipation rate of alcohol attributable to the pre-identified user in accordance with the time series of BrAC measurements; determining, responsive to estimating the dissipation rate of alcohol, at least a subset of the BrAC measurements as being based on the alveolar breath component but not the interferent breath component; and performing one of triggering and not triggering the IID into a lockout state based on the at least a subset of the BrAC measurements.

Abstract: Heat dissipation techniques include using metal features having one or more slanted or otherwise laterally-extending aspects. The metal features include, for example, tilted metal pillars, or metal bodies or fillets having an angled or sloping sidewall, or other metal features that extend both vertically and laterally. Such metal features increase the effective heat transfer area significantly by spreading heat in the in-plane (lateral) direction, in addition to the vertical direction. In some embodiments, slanted trenches are formed in photoresist/mold material deposited over a lower die, using photolithography and a multi-angle lens, or by laser drilling mold material deposited over the lower die. The trenches are then filled with metal. In other embodiments, metal features are printed on the lower die, and then molding material is deposited over the printed features. In any such cases, heat is conducted from a lower die to an upper die and/or an integrated heat spreader.