Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.

Abstract: A leakage detection device includes at least one optical coupler, a voltage divider, an analog-to-digital converter and a processing unit. Wherein, the at least one optical coupler is adapted to output an electrical signal according to a leakage degree of a DC power supply. The electrical signal is divided by the voltage divider to be output to the analog-to-digital converter and converted into a digital signal. The processing is adapted to compare a digital value corresponding to the digital signal with a reference value and output a leak signal when a difference between the digital value and the reference value is greater than a predetermined difference. A battery pack includes a battery cell assembly, a switch element, and a control unit, wherein the control unit controls the switch element to switch off an electrical connection between the battery cell assembly and the load to block electric power to the load.

Abstract: A loop antenna includes a printed circuit board (PCB), a first antenna structure and a second antenna structure. The PCB includes a first surface and a second surface relative to the first surface, and the PCB includes a clear region and a ground region, wherein the clear region is adjacent to the ground region. The first antenna structure is disposed in the clear region at the first surface. The first antenna structure includes a feed structure and a first ground end. The feed structure is coupled to a power feed end which is disposed in the ground region. The first ground end is coupled to the ground region. The second antenna structure is disposed relative to the first antenna structure at the second surface. The second antenna structure includes a second ground end. The second ground end is coupled to the ground region.

Abstract: A datum rebuilding method is applied to a bio-sensor module equipped in a wearable electronic device with the datum rebuilding function. The datum rebuilding method includes continuously receiving a plurality of physical signals, identifying if one specific physical signal meets a predefined condition, and outputting a warning signal to show a reminder when the specific physical signal is identified.

Abstract: This invention generally relates to a group of novel chemical compositions and their use for formulating RNA- and/or DNA-based medicine drugs/vaccines into stable compound complexes useful for both in-vitro and in-vivo delivery. Particularly, the present invention teaches the synthesis of a group of novel trimethylglycyl chemicals and their use for formulating cosmetic, therapeutic- and/or pharmaceutical-grade nucleic acid compositions, including but not limited microRNA precursors (pre-miRNA/miRNA), small hairpin RNAs (shRNA), short interfering RNAs (siRNA), ribozymes, antisense oligonucleotides, RNA-DNA hybrids and DNA-based vectors/vaccines, with or without modification, into delivery complexes, which can then be absorbed by cells in vivo, ex vivo and/or in vitro through an active mechanism of endocytosis via acetylcoline receptors for releasing the therapeutic and pharmaceutical effects of the formulated nucleic acid compositions.

Abstract: A propulsion device includes a propulsion body and a diversion assembly. The propulsion body includes a propulsion system and a housing accommodating the propulsion system. The housing has an air-intake opening and an air-discharge opening respectively on two opposite sides of the propulsion system. The diversion assembly includes first and second diversion annular sheets. The first diversion annular sheet is disposed outside the air-discharge opening of the housing and having a surrounding center. The first diversion annular sheet is swung relative to the air discharge opening by a first axis passing through the surrounding center. The second diversion annular sheet is disposed outside the air-discharge opening of the housing and concentrically disposed with the first diversion annular sheet. The second diversion annular sheet is swung relative to the air-discharge opening by a second axis passing through the surrounding center, and first axis intersects the second axis.

Abstract: A bias circuit generates a bias current to an RF power amplifier used for transmitting RF signals, and the amount of the bias current supplied to the RF power amplifier can be configured in multiple modes through transistor switches that are controlled by mode control signals, so that the bias current supplied to the RF power amplifier can be adjusted according to the required power level of the transmitting RF signals. In addition, the bias current can be turned off by another transistor switch that is controlled by a power control signal for saving power while the RF power amplifier is not transmitting RF signals.

Abstract: The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate; a first conductive feature and a second conductive feature disposed on the semiconductor substrate; and a staggered dielectric feature interposed between the first and second conductive feature. The staggered dielectric feature includes first dielectric layers and second dielectric layers being interdigitated. The first dielectric layers include a first dielectric material and the second dielectric layers include a second dielectric material being different from the first dielectric material.

Abstract: The invention discloses a connector with a direct locking structure. The connector comprises a male part and a female seat. The male part has a plurality of elastic parts, and each of the buckles is disposed on the outer sides of the plurality of the elastic parts. The female seat has a plurality of binding parts, and the binding parts respectively form two sides of the combining space, and the binding parts are correspondingly arranged to the buckles. The buckles are matched with the binding parts through deforming the elastic parts, so that the male parts and the female seats are further locked, wherein the locking of the male parts and the female seats are further released through deforming the elastic parts by the buckles and the binding parts.

Abstract: The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material, a first concentration of the second material at a portion of the superlattice layer proximal to the photosensitive member is greater than a second concentration of the second material at a portion of the superlattice layer distal to the photosensitive member.

Abstract: The application discloses a router coupled to a first device and a second device. The router includes a first packet input interface, a second packet input interface, a first register, a second register, a control circuit and a switch module. The switch module includes a control port, a first packet output interface and a second packet output interface. The application further discloses a routing method. The router and routing method saves idle time and improves quality of service.

Abstract: A semiconductor device package includes a substrate, a first solder paste, an electrical contact and a first encapsulant. The substrate includes a conductive pad. The first solder paste is disposed on the pad. The electrical contact is disposed on the first solder paste. The first encapsulant encapsulates a portion of the electrical contact and exposes the surface of the electrical contact. The electrical contact has a surface facing away from the substrate. A melting point of the electrical contact is greater than that of the first solder paste. The first encapsulant includes a first surface facing toward the substrate and a second surface opposite to the first surface. The second surface of the first encapsulant is exposed to air.

Abstract: A connector mainly includes a main base body, one end of which has a guide sleeve, the other end of the main base body has a butting holes, and the guide sleeve is connected with a connecting module. The connecting module further includes a connecting base which includes a connecting element. The connecting module further includes a butting seat correspondingly engages the guide sleeve, and a conductive module is housed inside the main base body. The conductive module further includes a central pin, and the central pin is provided with a second waterproof gasket. The second waterproof gasket for the central pin extending therethrough and abuts against a side of a convex seat. The central pin extends through a sleeve which is correspondingly connected with a conductive base, and the central pin is sleeved in the sleeve and the conductive base. Finally, the conductive module is further correspondingly sleeved with a fixing seat and a protective sleeve in sequence.

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first gate stack over a substrate. The substrate has a base and a first fin structure over the base, and the first gate stack wraps around a first upper portion of the first fin structure. The method includes partially removing the first fin structure, which is not covered by the first gate stack. The method includes forming a first mask layer over a first sidewall of the first fin structure. The method includes forming a first stressor over a second sidewall of the first fin structure while the first mask layer covers the first sidewall. The first sidewall is opposite to the second sidewall. The method includes removing the first mask layer. The method includes forming a dielectric layer over the base and the first stressor. The dielectric layer covers the first sidewall.

Abstract: A battery pack includes a casing, a battery cell assembly, an encoder, and a monitoring unit; the battery cell assembly is disposed in the casing; the encoder is adapted to generate one of a plurality of types of encoding configurations, and includes an operating section which is adapted for a user to set one of the encoding configurations of the encoder manually; the monitoring unit is adapted to sense a state of the battery cell assembly and generate an identification code according to the encoding configuration of the encoder; wherein, the monitoring unit is further adapted to output a state signal which includes the aforementioned identification code. Whereby, the battery pack of the present invention would be a universal battery pack.

Abstract: A mask layer is formed over a semiconductor device. The semiconductor device includes: a gate structure, a first layer disposed over the gate structure, and an interlayer dielectric (ILD) disposed on sidewalls of the first layer. The mask layer includes an opening that exposes a portion of the first layer and a portion of the ILD. A first etching process is performed to etch the opening partially into the first layer and partially into the ILD. A liner layer is formed in the opening after the first etching process has been performed. A second etching process is performed after the liner layer has been formed. The second etching process extends the opening downwardly through the first layer and through the gate structure. The opening is filled with a second layer after the second etching process has been performed.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A semiconductor device package includes a main substrate, at least one thin film transistor (TFT) module, at least one first electronic component, at least one encapsulant and a plurality of light emitting devices. The main substrate has a first surface and a second surface opposite to the first surface. The thin film transistor (TFT) module is disposed adjacent to and electrically connected to the first surface of the main substrate. The first electronic component is disposed adjacent to and electrically connected to the first surface of the main substrate. The encapsulant covers the at least one thin film transistor (TFT) module and the at least one first electronic component. The light emitting devices are electrically connected to the at least one thin film transistor (TFT) module.