Patents by Inventor Changging LIN

Changging LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11996482
    Abstract: A device includes a semiconductor substrate, a channel layer, a gate structure, source/drain epitaxial structures, and a dielectric isolation layer. The channel layer is over the semiconductor substrate. The gate structure is over the semiconductor substrate and surrounds the channel layer. The source/drain epitaxial structures are connected to the channel layer and arranged in a first direction. The dielectric isolation layer is between the gate structure and the semiconductor substrate. The dielectric isolation layer is wider than the gate structure but narrower than the channel layer in the first direction.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Lo-Heng Chang, Chien-Ning Yao
  • Patent number: 11996481
    Abstract: A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Chieh Su, Chih-Hao Wang, Kuo-Cheng Chiang, Wei-Hao Wu, Zhi-Chang Lin, Jia-Ni Yu, Yu-Ming Lin, Chung-Wei Hsu
  • Patent number: 11997888
    Abstract: A semiconductor device package includes a display device, an electronic module and a conductive adhesion layer. The display device includes a first substrate and a TFT layer. The first substrate has a first surface and a second surface opposite to the first surface. The TFT layer is disposed on the first surface of the first substrate. The electronic module includes a second substrate and an electronic component. The second substrate has a first surface facing the second surface of the first substrate and a second surface opposite to the first surface. The electronic component is disposed on the second surface of the second substrate. The conductive adhesion layer is disposed between the first substrate and the second substrate.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: May 28, 2024
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Ming-Hung Chen, Sheng-Yu Chen, Chang-Lin Yeh, Yung-I Yeh
  • Patent number: 11996293
    Abstract: A semiconductor device includes a substrate, a first semiconductor fin and a second semiconductor fin protruding from the substrate, an isolation feature disposed on the substrate and on sidewalls of the first and second semiconductor fins, a gate structure disposed on the isolation feature. The semiconductor device also includes a dielectric fin disposed on the isolation feature and sandwiched between the first and second semiconductor fins. A middle portion of the dielectric fin separates the gate structure into a first gate structure segment engaging the first semiconductor fin and a second gate structure segment engaging the second semiconductor fin.
    Type: Grant
    Filed: August 2, 2021
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Yu Wang, Zhi-Chang Lin, Ching-Wei Tsai, Kuan-Lun Cheng
  • Publication number: 20240165262
    Abstract: Provided is a toroidal mixed nanoparticle including a first polymer and a second polymer interacting with the first polymer. Also provided is a method for preparing the toroidal mixed nanoparticle, including mixing the first polymer and the second polymer having cleavable hydrophobic groups to form a mixed nanoparticle; and removing a portion of cleavable hydrophobic groups from the second polymer to make the second polymer charged and to form the toroidal mixed nanoparticle. Further provided is a method for delivering a drug or a bioactive agent to a subject in need thereof, including administering to the subject a pharmaceutical composition that includes the toroidal mixed nanoparticle conjugated to an effective amount of the drug or the bioactive agent, and a pharmaceutically acceptable excipient thereof.
    Type: Application
    Filed: November 18, 2022
    Publication date: May 23, 2024
    Inventors: YI-TING CHIANG, HUI-CHANG LIN, GUAN-JHONG HUANG
  • Publication number: 20240170337
    Abstract: The present disclosure describes a semiconductor structure with a dielectric liner. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a stacked fin structure, a fin bottom portion below the stacked fin structure, and an isolation layer between the stacked fin structure and the bottom fin portion. The semiconductor structure further includes a dielectric liner in contact with an end of the stacked fin structure and a spacer structure in contact with the dielectric liner.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventors: Zhi-Chang LIN, Shih-Cheng CHEN, Kuo-Cheng CHIANG, Kuan-Ting PAN, Jung-Hung CHANG, Lo-Heng CHANG, Chien Ning YAO
  • Publication number: 20240170534
    Abstract: A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.
    Type: Application
    Filed: February 23, 2023
    Publication date: May 23, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Zhi-Chang LIN, Ko-Feng CHEN, Chien-Ning YAO, Chien-Hung LIN
  • Publication number: 20240170896
    Abstract: A composite mounting type electrical connector includes an insulating shell, a plurality of terminals and a plurality of shielding members. The plurality of terminals are arranged in two rows parallel to each other, and a plurality of shielding members are arranged between the two rows of terminals and separated from each other by a predetermined distance to form insulation. The two rows of terminals are soldered to a circuit board by surface mounting technology and dual in line package process respectively. The ground terminals in the two columns of terminals are commonly connected to a shield spacer to form a common ground structure. The power terminals in the two columns of terminals are commonly connected to another shielding member to form a parallel connecting structure. The shielding members produce a shielding effect between two rows of terminals, which can prevent crosstalk therebetween.
    Type: Application
    Filed: May 27, 2023
    Publication date: May 23, 2024
    Inventors: MING LUO, YUNG- CHANG LIN, YU-HUNG LIN, HUNG-TIEN CHANG, HSUAN HO CHUNG
  • Publication number: 20240170556
    Abstract: A method for forming a semiconductor structure is provided. The method includes forming a spacer layer along a first fin structure and a second fin structure, etching a first portion of the spacer layer and the first fin structure to form first fin spacers and a first recess between the first fin spacers, etching a second portion of the spacer layer and the second fin structure to form second fin spacers and a second recess between the second fin spacers, and forming a first source/drain feature in the first recess and a second source/drain feature in the second recess. The second fin structure is wider than the first fin structure. The first fin spacers have a first height, and the second fin spacers have a second height that is greater than the first height.
    Type: Application
    Filed: February 20, 2023
    Publication date: May 23, 2024
    Inventors: Shih-Cheng CHEN, Zhi-Chang LIN, Jung-Hung CHANG, Chien-Ning YAO, Tsung-Han CHUANG, Kuo-Cheng CHIANG
  • Publication number: 20240156405
    Abstract: A smart wearable device has a signal calibration function executed by a signal calibration method and applied to a finger, a limb and/or a neck of a user. The smart wearable device includes at least one physiological signal detector, at least one pressure detector and an operation processor. The at least one physiological signal detector is adapted to abut against a detection area of the user for detecting a physiological signal. The at least one pressure detector is disposed around the at least one physiological signal detector and adapted to detect a pressure value of the detection area. The operation processor is electrically connected with the at least one physiological signal detector and the at least one pressure detector. The operation processor is adapted to optimize the physiological signal when the pressure value exceeds a predefined pressure threshold.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 16, 2024
    Applicant: PixArt Imaging Inc.
    Inventors: Yung-Chang Lin, Jian-Cheng Liao, Chun-Chih Chen, Sen-Huang Huang, Yen-Min Chang
  • Patent number: 11982866
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.
    Type: Grant
    Filed: December 15, 2022
    Date of Patent: May 14, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Liang-Ting Ho, Chen-Er Hsu, Yi-Liang Chan, Fu-Lai Tseng, Fu-Yuan Wu, Chen-Chi Kuo, Ying-Jen Wang, Wei-Han Hsia, Yi-Hsin Tseng, Wen-Chang Lin, Chun-Chia Liao, Shou-Jen Liu, Chao-Chun Chang, Yi-Chieh Lin, Shang-Yu Hsu, Yu-Huai Liao, Shih-Wei Hung, Sin-Hong Lin, Kun-Shih Lin, Yu-Cheng Lin, Wen-Yen Huang, Wei-Jhe Shen, Chih-Shiang Wu, Sin-Jhong Song, Che-Hsiang Chiu, Sheng-Chang Lin
  • Publication number: 20240151994
    Abstract: A directional coupler is configured to receive a continuous light waveform and split the waveform into two carrier signals. Ring modulators are configured to receive the carrier signals and binary data and modulate the carrier signals based on the binary data. A combiner is configured to combine the modulated carrier signals into a four-level pulse amplitude modulation (PAM4) signal.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Inventors: Chih-Chang LIN, Chan-Hong CHERN
  • Publication number: 20240153958
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.
    Type: Application
    Filed: January 7, 2024
    Publication date: May 9, 2024
    Inventors: Jung-Hung CHANG, Zhi-Chang LIN, Shih-Cheng CHEN, Chien Ning YAO, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20240153924
    Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes a plurality of first recesses and a plurality of second recesses; disposing a plurality of first electronic units in the plurality of first recesses of the plurality of working areas through fluid transfer; identifying a defective working area from the plurality of working areas, wherein at least one of the plurality of first recesses of the defective working area has no electronic unit or a defective first electronic unit disposed therein; and disposing at least one repairing electronic unit in at least one of the plurality of second recesses of the defective working area through laser transfer.
    Type: Application
    Filed: October 3, 2023
    Publication date: May 9, 2024
    Applicant: InnoLux Corporation
    Inventors: Fang-Ying Lin, Kai Cheng, Ming-Chang Lin, Tsau-Hua Hsieh
  • Patent number: 11978802
    Abstract: Provided are FinFET devices and methods of forming the same. A dummy gate having gate spacers on opposing sidewalls thereof is formed over a substrate. A dielectric layer is formed around the dummy gate. An upper portion of the dummy gate is removed and upper portions of the gate spacers are removed, so as to form a first opening in the dielectric layer. A lower portion of the dummy gate is removed to form a second opening below the first opening. A metal layer is formed in the first and second openings. The metal layer is partially removed to form a metal gate.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: May 7, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Wei Hsu, Chih-Hao Wang, Huan-Chieh Su, Wei-Hao Wu, Zhi-Chang Lin, Jia-Ni Yu
  • Patent number: 11978678
    Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.
    Type: Grant
    Filed: August 5, 2022
    Date of Patent: May 7, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Tung-Kai Liu, Tsau-Hua Hsieh, Wei-Cheng Chu, Chun-Hsien Lin, Chandra Lius, Ting-Kai Hung, Kuan-Feng Lee, Ming-Chang Lin, Tzu-Min Yan, Hui-Chieh Wang
  • Publication number: 20240145357
    Abstract: The present disclosure provides an electronic assembly including a semiconductor device package. The semiconductor device package includes a first package and a conductive element. The first package includes an electronic component and a protection layer covering the electronic component. The conductive element is supported by the protection layer and electrically connected with the electronic component through an electrical contact. A method for manufacturing a semiconductor device package is also provided in the present disclosure.
    Type: Application
    Filed: January 2, 2024
    Publication date: May 2, 2024
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Chang-Lin YEH, Jen-Chieh KAO
  • Publication number: 20240139301
    Abstract: The disclosure provides a method of active immunotherapy for a cancer patient, comprising administering vaccines against Globo series antigens (i.e., Globo H, SSEA-3 and SSEA-4). Specifically, the method comprises administering Globo H-CRM197 (OBI-833/821) in patients with cancer. The disclosure also provides a method of selecting a cancer patient who is suitable as treatment candidate for immunotherapy. Exemplary immune response can be characterized by reduction of the severity of disease, including but not limited to, prevention of disease, delay in onset of disease, decreased severity of symptoms, decreased morbidity and delayed mortality.
    Type: Application
    Filed: November 19, 2021
    Publication date: May 2, 2024
    Inventors: Ming-Tain LAI, Cheng-Der Tony YU, I-Ju CHEN, Wei-Han LEE, Chueh-Hao YANG, Chun-Yen TSAO, Chang-Lin HSIEH, Chien-Chih OU, Chen-En TSAI
  • Patent number: 11973284
    Abstract: The present invention discloses a connector that utilizes a first connecting portion includes a plurality of terminals and a latching arm that forms a connection end and utilizes a second connecting portion includes a plurality of terminal slots and an engaging groove that be coupled to the connection end of the first connecting portion. The terminals are electrically connected to the terminal slots and the connecting ends are fastened to the engaging arms, and the terminals are electrically connected to the terminal slots. In a state in which the electrical connection is maintained, the first connecting portion and the second connecting portion are disposed in close to or in the same plane by applying an external force to change the first angle between the first connecting portion and the second connecting portion to the second angle.
    Type: Grant
    Filed: April 9, 2020
    Date of Patent: April 30, 2024
    Assignee: P-TWO INDUSTRIES INC.
    Inventor: Shien-Chang Lin
  • Publication number: 20240135846
    Abstract: An electronic device and a manufacturing method thereof are provided. The manufacturing method of the electronic device includes the following. A substrate is provided. A plurality of electronic units are transferred to the substrate. The electronic units are inspected to obtain M first defect maps. The M first defect maps are integrated into N second defect maps, where N<M. M repairing groups are provided according to the N second defect maps. Each of the repairing groups includes at least one repairing electronic unit. The M repairing groups are transferred to the substrate. At least two of the repairing groups have the same location distribution of repairing electronic units, and the location distribution is consistent with a defect distribution of one of the second defect maps.
    Type: Application
    Filed: September 17, 2023
    Publication date: April 25, 2024
    Applicant: Innolux Corporation
    Inventors: Kai Cheng, Fang-Ying Lin, Ming-Chang Lin, Tsau-Hua Hsieh