Abstract: A device includes a passive-on-glass (POG) structure and an interface layer. The POG structure includes a passive component and at least one contact pad on a first surface of a glass substrate. The interface layer has a second surface on the first surface of the glass substrate such that the passive component and the at least one contact pad are located between the first surface of the glass substrate and the interface layer. The interface layer includes at least one land grid array (LGA) pad formed on a third surface of the interface layer, where the third surface of the interface layer is opposite the second surface of the interface layer. The interface layer also includes at least one via formed in the interface layer configured to electrically connect the at least one contact pad with the at least one LGA pad.

Abstract: A semiconductor device according to some examples of the disclosure may include a package substrate, a semiconductor die coupled to one side of the package substrate with a first set of contacts on an active side of the semiconductor die and coupled to a plurality of solder prints with a second set of contacts on a back side of the semiconductor die. The semiconductor die may include a plurality of vias connecting the first set of contacts to the second set of contacts and configured to allow heat to be transferred from the active side of the die to the plurality of solder prints for a shorter heat dissipation path.

Abstract: A device includes a glass substrate and a capacitor. The capacitor includes a first metal coupled to a first electrode, a dielectric structure, and a via structure comprising a second electrode of the capacitor. The first metal structure is separated from the via structure by the dielectric structure.

Abstract: In a particular aspect, a device includes a substrate including at least one through-substrate via. A metal structure is disposed on a surface of the substrate. The device further includes a semiconductor layer bonded to the substrate. The semiconductor layer includes at least one complimentary metal-oxide-semiconductor (CMOS) transistor and a metal disposed within a second via. The metal is in direct contact with the metal structure.

Abstract: A three dimensional (3D) multiplexer structure may include a first two dimensional (2D) inductor capacitor (LC) filter layer. The first 2D LC filter layer may include a first 2D spiral inductor and a first capacitor(s). The 3D multiplexer structure may also include a second 2D LC filter layer. The second 2D LC filter layer may include a second 2D spiral inductor and a second capacitor(s) stacked directly on and communicably coupled to the first 2D LC filter.

Abstract: An exemplary MIM capacitor may include a first metal plate, a dielectric layer on the first metal plate, a second metal plate on the dielectric layer, a via layer on the second metal plate, and a third metal plate on the via layer where the second metal plate has a tapered outline with a first side and a second side longer than the first side such that the second side provides a lower resistance path for a current flow.

Abstract: A device package with a reduced foot print may include a substrate and a through-substrate via extending from a top surface to a bottom surface of the substrate. The assembly may also include a trace and a contact pad on the top and bottom surfaces of the substrate and electrically coupled to the through-substrate via. An encapsulated die above the substrate may be electrically coupled to the trace. A joint below the substrate may be electrically coupled to the contact pad. A sidewall of the through-substrate via may be exposed. At least a portion of the through-substrate via may be within an outer side boundary of the substrate. Also, the trace and the contact pad may be within the outer side boundary of the substrate.

Abstract: Disclosed is an apparatus including a plurality of vias each having a defined shape, wherein each of the plurality of vias includes a first two-dimensional conductive layer plated on a first side of a substrate, the first two-dimensional conductive layer having the defined shape, a second two-dimensional conductive layer plated on a second side of the substrate, the second two-dimensional conductive layer having the defined shape, and a via conductively coupling the first two-dimensional conductive layer to the second two-dimensional conductive layer. The apparatus further includes a plurality of interconnects configured to conductively couple the plurality of vias, wherein the first two-dimensional conductive layer and the second two-dimensional conductive layer of each of the plurality of vias are perpendicular to the plurality of interconnects.

Abstract: A radio frequency (RF) integrated circuit may include a die having passive components including at least one pair of capacitors covered by a first dielectric layer supported by the die. The RF integrated circuit may also include an inline pad structure coupled to the at least one pair of capacitors proximate an edge of the die. The inline pad structure may include a first portion and a second portion extending into a dicing street toward the edge of the die and covered by at least a second dielectric layer.

Abstract: In conventional device packages, separate standalone inductors are provided and mounted on an interposer substrate along with a die. Separate inductors reduce integration density, decrease flexibility, increase footprint, and generally increase costs. To address such disadvantages, it is proposed to provide a part of an inductor in a substrate below a die. The proposed stacked substrate inductor may include a first inductor in a first substrate, a second inductor in a second a second substrate stacked on the first substrate, and an inductor interconnect coupling the first and second inductors. The core regions of the first and second inductors may overlap with each other at least partially. The proposed stacked substrate inductor may enhance integration density, increase flexibility, decrease footprint, and/or reduce costs.

Abstract: An apparatus includes a substrate and a three-dimensional (3D) wirewound inductor integrated within the substrate. The apparatus further includes a capacitor coupled to the 3D wirewound inductor.

Abstract: The present disclosure provides circuits and methods for fabricating circuits. A circuit may include an insulator having a first surface, a second surface, a periphery, a first subset of circuit elements disposed on the first surface, a second subset of circuit elements disposed on the second surface, and at least one conductive sidewall disposed on the periphery, wherein the conductive sidewall electrically couples the first subset of circuit elements to the second subset of circuit elements.

Abstract: The present disclosure provides integrated circuit apparatuses and methods for manufacturing integrated circuit apparatuses. An integrated circuit apparatus may include a first insulator, the first insulator being substantially planar and having a first top surface and a first bottom surface opposite the first top surface, a first conductor disposed on the first insulator, a second insulator, the second insulator being substantially planar and having a second top surface and a second bottom surface opposite the second top surface, a second conductor disposed on the second insulator, and a dielectric layer disposed between the first bottom conductor of the first insulator and the second top conductor of the second insulator.

Abstract: A tunable matching network is disclosed. In a particular example, the matching network includes at least one first inductor in a signal path of the matching network. The matching network includes at least one second inductor outside of the signal path. The matching network includes one or more switches coupled to the at least one second inductor. The one or more switches are configured to selectively enable mutual coupling of the at least one first inductor and the at least one second inductor.

Abstract: An integrated circuit (IC) device may include a first substrate having an inductor ground plane in a conductive layer of the first substrate. The integrated circuit may also include a first inductor in a passive device layer of a second substrate that is supported by the first substrate. A shape of the inductor ground plane may substantially correspond to a silhouette of the first inductor.

Abstract: A three dimensional (3D) multiplexer structure may include a first two dimensional (2D) inductor capacitor (LC) filter layer. The first 2D LC filter layer may include a first 2D spiral inductor and a first capacitor(s). The 3D multiplexer structure may also include a second 2D LC filter layer. The second 2D LC filter layer may include a second 2D spiral inductor and a second capacitor(s) stacked directly on and communicably coupled to the first 2D LC filter.

Abstract: An integrated circuit device includes a first substrate having a ground plane. The integrated circuit device also includes a second substrate. The second substrate has a first layer of passive devices. The passive devices include at least one inductor on a first side of the second substrate. The first layer of passive devices is substantially orthogonal to the ground plane and the second substrate supported by the first substrate. An inductor magnetic field is substantially parallel to the ground plane.

Abstract: Passive device assembly for accurate ground plane control is disclosed. A passive device assembly includes a device substrate conductively coupled to a ground plane separation control substrate. A passive device disposed on a lower surface of the device substrate is separated from an embedded ground plane mounted on a lower surface of the ground plane separation control substrate by a separation distance. The separation distance is accurately controlled to minimize undesirable interference that may occur to the passive device. The separation distance is provided inside the passive device assembly. Conductive mounting pads are disposed on the lower surface of the ground plane separation control substrate to support accurate alignment of the passive device assembly on a circuit board. By providing sufficient separation distance inside the passive device assembly, the passive device assembly can be precisely mounted onto any circuit board regardless of specific design and layout of the circuit board.

Abstract: Provided are space-efficient capacitors that have a higher quality factor than conventional designs and improve coupling of electrical energy from a through-glass via (TGV) to a dielectric. For example, provided is a TGV having a non-rectangular cross-section, where one end of the TGV is coupled to a first metal plate. A dielectric material is formed on the first metal plate. A second metal plate is formed on the dielectric material in a manner that overlaps at least a portion of the first metal plate to form at least one overlapped region of the dielectric material. At least a part of the perimeter of the overlapped region is non-planar. The overlapped region can be formed in a shape of a closed ring, in a plurality of portions of a ring shape, in substantially a quarter of a ring shape, and/or in substantially a half of a ring shape.

Abstract: An integrated circuit (IC) includes a first semiconductor device on a glass substrate. The first semiconductor device includes a first semiconductive region of a bulk silicon wafer. The IC includes a second semiconductor device on the glass substrate. The second semiconductor device includes a second semiconductive region of the bulk silicon wafer. The IC includes a through substrate trench between the first semiconductive region and the second semiconductive region. The through substrate trench includes a portion disposed beyond a surface of the bulk silicon wafer.