Abstract: A semiconductor device is provided. The semiconductor device includes a first source/drain of a first semiconductor device, and a second source/drain of a second semiconductor device. The semiconductor device further includes a source/drain contact adjoining a first side of the first source/drain, a frontside via adjoining the source/drain contact, and a backside electric contact adjoining a first side of the second source/drain, wherein the backside electric contact is on a side opposite the source/drain contact, and a conductive alignment region. The device further includes a backside interconnect electrically connected to the conductive alignment region, wherein the backside interconnect is on the same side of the first and second source/drain as the backside electric contact, and an alignment region via electrically connected to the conductive alignment region, wherein the alignment region via is on the same side of the first and second source/drain as the source/drain contact and frontside via.

Abstract: An apparatus, a method, and a storage medium for database pagination. The apparatus, method, and storage medium are configured to perform following processes, including: acquiring a pagination request from a user; determining a query parameter based on the pagination request; determining a corresponding pagination pattern and a request data amount based on the query parameter; determining a target query mode based on the request data amount; generating a query task based on the pagination pattern and the target query mode; obtaining at least one first query result based on the query task; determining a target result set based on the at least one first query result; and paging the target result set based on the pagination pattern and the target query mode to obtain multiple pages of pagination data.

Abstract: This application relates to a tab flattening device. The tab flattening device includes: a roller configured to convey an electrode plate, a cover, and a flattening portion. The surface of the roller is in contact with the electrode plate in a contact region. The cover surrounds the contact region peripherally and includes a feed-in guide surface oriented toward the contact region. The flattening portion is disposed protrusively on the feed-in guide surface, and located opposite to a tab of the electrode plate. A tab guide surface is formed on the flattening portion. Along a feed-in direction of the electrode plate, the flattening portion is at least partially located upstream of the contact region.

Abstract: Disclosed is a multifunctional kneading-type slurry producing machine, which includes a base frame and a screw. The base frame is provided with a kneading tube and a dispersing cavity. The kneading tube is provided with a kneading cavity, a powder inlet, a slurry inlet, and a slurry outlet, and the powder inlet, the slurry inlet and the slurry outlet are all communicated with the kneading cavity. The screw is threaded through the kneading cavity and pivotally connected to the base frame. The dispersing cavity is provided with a dispersing zone inlet and a dispersing zone outlet, and is configured to accommodate a dispersing stator and a dispersing rotor interacting with the dispersing stator. A shank portion of the screw is threaded through and drivingly connected to the dispersing rotor.

Abstract: The present invention discloses a preparation process of multi-component spherical alloy powder, which adopts a plasma rotation electrode process (PREP) method to prepare the multi-component spherical alloy powder. The multi-component alloy includes at least one of refractory metals and compounds thereof, specifically including tungsten, molybdenum, tantalum, niobium, rhenium, tungsten carbide, tantalum carbide and the like.

Abstract: The disclosure discloses a heat-sealable polyester film, including a base layer and a heat-seal layer formed on the base layer. The heat-seal layer includes a physically regenerated polyester resin, a chemically regenerated polyester resin, and a modifier. The heat-sealable temperature of the heat-sealable polyester film is between 100° C. and 230° C.

Abstract: An integrated circuit (IC) assembly method is provided. The method includes fabricating a first wafer including a first device with a back end of line (BEOL) and first terminals of first and second types at the BEOL and fabricating a second wafer including a second device for back side power delivery network (BSPDN) processing, second terminals of the first type, first vias and second vias. The first and second wafers are bonded at the BEOL to connect the second terminals of the first type to a subset of the first terminals of the first type, the first vias to remaining first terminals of the first type, and the second vias to the first terminals of the second type. A BSPDN is built onto a backside of the second wafer to include first and second BSPDN terminals connected to the first and second vias, respectively.

Abstract: Disclosed is a dispersing device, including a first shear device and at least two second shear devices, one of the first shear device and the second shear device is a shear stator and the other is a shear rotor. The first shear device includes a shear inner ring, a shear outer ring and an annular isolation board. The shear inner ring is provided with a plurality of first radial through holes; the shear outer ring is provided to surround outside the shear inner ring, and is provided coaxially with the shear inner ring and connected in linkage with each other; and the shear outer ring is provided with a plurality of third radial through holes. The annular isolation board is located between the shear inner ring and the shear outer ring, and both opposite ends of the annular isolation board form shear receiving grooves, respectively.

Abstract: A pulping machine includes a frame, a mixing device, and a dispersing device. The frame has a mixing chamber and a dispersing chamber, the mixing device is accommodated in the mixing chamber, the dispersing device is accommodated in the dispersing chamber; the dispersing chamber has a liquid inlet, the mixing chamber has a liquid outlet, the liquid inlet, the dispersing chamber, the mixing chamber and the liquid outlet are sequentially communicated; the mixing chamber also has a powder material inlet, the powder material inlet, the mixing chamber and the liquid outlet are sequentially communicated along a flow direction of powder material; the liquid outlet is connected with a filter device.

Abstract: Techniques are described for discrete-time self-capacitor sensing in a touch panel. The self-capacitor manifests a detectably different capacitance based on presence or absence of a local touch event on the touch panel. In a first time phase, embodiments charge a self-capacitor and initialize a ramp bias generator. In a second time phase, embodiments discharge the self-capacitor with a ramp-controlled current source that is biased by the ramp bias generator to produce a discharge current that transitions from high at the beginning of the second time phase to low at the end of the second time phase. By the end of the second phase, the remaining charge in the self-capacitor depends on presence or absence of a local touch event. Some embodiments convert the remaining charge to an amplified sense output for readout.

Abstract: A cantilever probe card device and a focusing probe thereof are provided. The focusing probe includes a soldering segment, a testing segment, two outer elastic arms spaced apart from each other, and a focusing portion. The testing segment is spaced apart from the soldering segment along an arrangement direction, and has a needle tip, an outer edge, and an inner edge that is opposite to the outer edge. Each of the two outer elastic arms has two end portions respectively connected to the soldering segment and the inner edge of the testing segment. The focusing portion is connected to the inner edge and is located between the needle tip and the two outer elastic arms, and has a plurality of focusing points arranged on one side thereof away from the two outer elastic arms.

Abstract: A matte film for hot pressing and a manufacturing method thereof are provided. The manufacturing method includes steps of forming at least one polyester composition into an unstretched polyester thick film and stretching the unstretched polyester thick film in a machine direction (MD) and a transverse direction (TD). The polyester composition includes 81% to 97.9497% by weight of a polyester resin, 0.02% to 2% by weight of an antioxidative ingredient, 0.0003% to 1% by weight of a nucleating agent, 0.01% to 2% by weight of a flow aid, 0.01% to 2% by weight of a polyester modifier, 0.01% to 2% by weight of an inorganic filler, and 2% to 10% by weight of silica particles. The polyester resin has an intrinsic viscosity between 0.60 dl/g and 0.80 dl/g.

Abstract: A metal-insulator-metal (MIM) capacitor structure includes a substrate extending along a first direction to define a length, a second direction orthogonal to the first direction to define a width, and a third direction orthogonal to the first and second direction to define a height. The substrate includes a first capacitance region and a second capacitance region. The first capacitance region has a first maximum operating voltage (Vmax) and the second capacitance region has a second Vmax that is greater than the first Vmax.

Abstract: A method of making a semiconductor component includes depositing a first metal material onto a structure having a first cavity and a second cavity such that the first metal material fills the first cavity and forms a first lining on exposed surfaces of the second cavity. The method further includes depositing a dielectric material onto the structure such that the dielectric material forms a second lining on exposed surfaces of the first lining. The method further includes depositing a second metal material onto the structure such that the second metal material fills remaining volume in the second cavity.

Abstract: Embodiments of the invention include a subtractive top via as a bottom electrode contact for an embedded memory structure. Forming the bottom electrode contact includes depositing a conductive material on an underlayer and etching the conductive material to form an extended via and a conductive pad as an integral unit. The extended via extends from the conductive pad such that the extended via is adjacent to a memory structure, the extended via being formed as a first contact for the memory structure.

Abstract: A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. The first nitride-based semiconductor layer includes a drift region and at least two doped barrier regions defining an aperture in the drift region. The nitride-based multiple semiconductor layer structure is disposed over the first nitride-based semiconductor layer and has a first heterojunction and a second heterojunction which are separated from each other. The gate electrode is received by the nitride-based multiple semiconductor layer structure and vertically aligns with the aperture in the drift region. The gate insulator layer is disposed between the nitride-based multiple semiconductor layer structure and the gate electrode.

Abstract: A semiconductor device includes an integrated circuit chip having a frontside and a backside. The frontside includes a frontside signal line configured to transmit signals to a first terminal of a transistor arranged in the integrated circuit chip, and the backside includes a backside power line configured to transmit power to a second terminal of the transistor. The semiconductor device further includes a contact configured to connect a gate of the transistor to a backside signal line configured to transmit signals to the gate of the transistor. The semiconductor device further includes a via extending through the frontside and the backside of the integrated circuit chip. The via is configured to transmit signals between a lowermost contact on the frontside and an uppermost contact on the backside of the integrated circuit chip.

Abstract: A method, device and system for updating a map of an unloading area (UA) of an open pit mine, which relate to the technical field of open pit mines. The method includes: acquiring one or more coordinates of one or more first preset positions of auxiliary operation equipment (11) during an operation (302), wherein the auxiliary operation equipment (11) trims a retaining wall (L) that acts as a physical boundary of the unloading area (UA) during the operation, and during the operation of the auxiliary operation equipment (11), each first preset position is located within the unloading area (UA); determining a first coordinate set (304), the first coordinate set (304) including coordinates among the one or more coordinates located outside of a first map of the unloading area (UA); and according to the first coordinate set (304), updating the first map into a second map (306).

Abstract: Metal interconnect structures are reworked to address possible voids or other defects. Etching of initially deposited interconnect metal to open voids is followed by reflow to accumulate interconnect metal at the bottoms of trenches. Additional interconnect metal is deposited over the initially deposited interconnect metal by electroplating and/or electroless plating. Additional diffusion barrier material may be deposited and patterned prior to deposition of the additional interconnect material.

Abstract: A device and method for increasing solid holdup in a reaction crystallizer are disclosed. The device includes a discharge pipe, a clear liquid pipe, a clear liquid tank and a gas collecting pipe. A lower end of the discharge pipe is inserted into the crystallizer below the liquid level, while that of the clear liquid pipe is inserted into the clear liquid tank below the liquid level. By using the gas collecting pipe, the reaction crystallizer and the clear liquid tank are communicated all the time. When feeding, a liquid-solid mixture in the crystallizer automatically enters the discharge pipe and flows upward slowly therein, during which solid particles gradually settle down and automatically fall back into the crystallizer while the clear liquid keeps on flowing upward, enters the clear liquid pipe and thereby flows into the clear liquid tank. The clear liquid tank maintains a constant liquid level via overflowing.