Abstract: An electrolyte matrix for use with molten carbonate fuel cells having an enhanced stability and lifetime is provided. The electrolyte matrix includes lithium aluminate as a support material and a coarsening inhibitor. The coarsening inhibitor may be in the form of discrete particles or a dopant present in the support material. The coarsening inhibitor may include MnO2, Mn2O3, TiO2, ZrO2, Fe2O3, LiFe2O3, or mixtures thereof. The coarsening inhibitor prevents the formation of large pores in the electrolyte matrix during operation of the fuel cell, increasing the performance and the service lifetime of the electrolyte matrix.

Abstract: A method for preparing a ?-nucleoside compound, including the following steps: 1) performing a silylation reaction of a nitrogenous base or an analogue thereof in the presence of TMSOTf to give the nitrogenous base or the analogue thereof being protected by trimethylsilyl; 2) performing a direct glycosylation reaction of the reaction liquid, without being isolated, and a five- or six-membered ring saccharide or a derivative thereof closed by a hydroxyl protecting group to give a closed ?-nucleoside compound; and 3) performing a deprotection reaction to give the ?-nucleoside compound. The method uses a one-pot process to prepare the key intermediates of the ?-nucleoside compound, and the yield of materials in ?-configuration increases significantly. The method has the benefits of simple operations, being energy conservation and environment protection, and being suitable for industrial applications.

Abstract: Cathode collector structures and/or corresponding cathode structures are provided that can allow for improved operation for a molten carbonate fuel cell when operated under conditions for elevated CO2 utilization. A cathode collector structure that provides an increased open area at the cathode surface can reduce or minimize the amount of alternative ion transport that occurs within the fuel cell. Additionally or alternately, grooves in the cathode surface can be used to increase the open area.

Abstract: Molten carbonate fuel cells (MCFCs) are operated to provide enhanced CO2 utilization. This can increase the effective amount of carbonate ion transport that is achieved. The enhanced CO2 utilization is enabled in part by operating an MCFC under conditions that cause transport of alternative ions across the electrolyte. The amount of alternative ion transport that occurs during enhanced CO2 utilization can be mitigated by using a more acidic electrolyte.

Abstract: Molten carbonate fuel cell configurations are provided that include one or more baffle structures within the cathode gas collection volume. The baffle structures can reduce the unblocked flow cross-section of the cathode gas collection volume by 10% to 80%. It has been discovered that when operating a molten carbonate fuel cell under conditions for elevated CO2 utilization, the presence of baffles can provide an unexpected benefit in the form of providing increased transference and/or increased operating voltage.

Abstract: A layered cathode structure for a molten carbonate fuel cell is provided, along with methods of forming a layered cathode and operating a fuel cell including a layered cathode. The layered cathode can include at least a first cathode layer and a second cathode layer. The first cathode layer can correspond to a layer that is adjacent to the molten carbonate electrolyte during operation, while the second cathode layer can correspond to a layer that is adjacent to the cathode collector of the fuel cell. The first cathode layer can be formed by sintering a layer that includes a conventional precursor material for forming a cathode, such as nickel particles. The second cathode layer can be formed by sintering a layer that includes a mixture of particles of a conventional precursor material and 1.0 vol % to 30 vol % of particles of a lithium pore-forming compound.

Abstract: A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.

Abstract: A polygon monitoring camera with multi-functional mounting structure has a housing, a first assembling surface and a second assembling surface. A camera module is provided within the inside of the housing. The first assembling surface formed on either side of the housing is configured to fix an mounting module thereon; while the second assembling surface formed on another surface of the housing is configured to install additionally a fixing unit configured to fix another mounting module or a second polygon monitoring camera that is identical in appearance and contains a depth camera module. In this manner, manufacturers can customize the mounting modules required for different user according to their actual needs, and solve the problem that the conventional multi-functional cameras cannot meet the requirements of customized design due to different specifications of the camera, and present disclosure can achieve increased functions of a single camera in flexible manner.

Abstract: A method of forming a semiconductor device is provided. A first substrate is provided with a conductive feature therein, a metal bump over the conductive feature and a passivation stack aside the metal bump. A first insulating layer is formed over the metal bump and the passivation stack. First and second patterning processes are performed to form first and second opening patterns in the first insulating layer. The metal bump is exposed by the second patterning process. A second substrate is provided with a second insulating layer thereon. The second substrate is bonded to the first substrate with the second insulating layer and the first insulating layer facing each other, so that the second insulating layer fills in the first and second opening patterns of the first insulating layer. The first insulating layer and a portion of the passivation stack are removed.

Abstract: The present disclosure provides a lightweight tile. The lightweight tile has a tile body and a lacquer layer overlaying on the tile body. The tile body is composed of a rigid foamed resin having a plurality of void cells. The density of the rigid foamed resin is 0.2 to 0.45 g/cm3. The lightweight tile provided in the present disclosure is less dense than the conventional ceramic tiles. In addition, the heat insulation and sound insulation of the lightweight tile are excellent.

Abstract: The present invention provides a camera apparatus, comprising: a housing having an interior space; a camera lens disposed in the interior space of the housing; and a breathing light disposed between the housing and the camera lens and encircling the camera lens.

Abstract: An inorganic felt material includes zirconia stabilized by at least one Group IIA material, such that the Group IIA material includes at least one of calcium (Ca), magnesium (Mg), or a combination thereof. The felt material may also include at least one Group III material.

Abstract: Techniques to use keypoint detection to highlight a subject of interest are disclosed. In various embodiments, image data comprising an image is processed to detect a set of keypoints on a human subject included in an image comprising the image data. The image data is processed to detect a set of additional points associated with a surface of the human subject. At least adjacent ones of said keypoints and additional points are connected to generate a mesh overlay. The mesh overlay is combined with the image to generate a composite in which the mesh overlay is superimposed over the human subject.

Abstract: A method of forming a semiconductor device is provided. A first substrate is provided with a conductive feature therein, a metal bump over the conductive feature and a passivation stack aside the metal bump. A first insulating layer is formed over the metal bump and the passivation stack. First and second patterning processes are performed to form first and second opening patterns in the first insulating layer. The metal bump is exposed by the second patterning process. A second substrate is provided with a second insulating layer thereon. The second substrate is bonded to the first substrate with the second insulating layer and the first insulating layer facing each other, so that the second insulating layer fills in the first and second opening patterns of the first insulating layer. The first insulating layer and a portion of the passivation stack are removed.

Abstract: A method for preparing a ?-nucleoside compound, including the following steps: 1) performing a silylation reaction of a nitrogenous base or an analogue thereof in the presence of TMSOTf to give the nitrogenous base or the analogue thereof being protected by trimethylsilyl; 2) performing a direct glycosylation reaction of the reaction liquid, without being isolated, and a five- or six-membered ring saccharide or a derivative thereof closed by a hydroxyl protecting group to give a closed ?-nucleoside compound; and 3) performing a deprotection reaction to give the ?-nucleoside compound. The method uses a one-pot process to prepare the key intermediates of the ?-nucleoside compound, and the yield of materials in ?-configuration increases significantly. The method has the benefits of simple operations, being energy conservation and environment protection, and being suitable for industrial applications.

Abstract: A method of forming a semiconductor device is provided. A first substrate is provided with a conductive feature therein, a metal bump over the conductive feature and a passivation stack aside the metal bump. A first insulating layer is formed over the metal bump and the passivation stack. First and second patterning processes are performed to form first and second opening patterns in the first insulating layer. The metal bump is exposed by the second patterning process. A second substrate is provided with a second insulating layer thereon. The second substrate is bonded to the first substrate with the second insulating layer and the first insulating layer facing each other, so that the second insulating layer fills in the first and second opening patterns of the first insulating layer. The first insulating layer and a portion of the passivation stack are removed.

Abstract: A semiconductor device comprises a semiconductor substrate, a conductive pad over the semiconductor substrate, a conductive bump over the conductive pad, a conductive cap over the conductive bump, and a passivation layer over the semiconductor substrate and surrounding the conductive bump. A combination of the conductive bump and the conductive cap has a stepped sidewall profile. The passivation layer has an inner sidewall at least partially facing and spaced apart from an outer sidewall of the conductive bump.

Abstract: A caulk composition includes at least one powder component and at least one binder component, such that the powder component has a particle size distribution in the range of 95% less than 25 ?m and 90% greater than 1 ?m. A molten carbonate fuel cell (MCFC) includes a fuel cell stack, a manifold, and the caulk composition disposed in between the fuel cell stack and the manifold.

Abstract: Semiconductor devices are provided. The semiconductor device includes a first dielectric layer, a bump, an etching stop layer and a spacer. The first dielectric layer is disposed over and exposes a conductive structure. The bump is partially disposed in the first dielectric layer to electrically connect the conductive structure. The etching stop layer is disposed over the first dielectric layer aside the bump. The spacer surrounds the bump and disposed between the etching stop layer and the bump.