Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on one or more of Fms, Kit, Flt3, TrkA, TrkB and TrkC kinase protein.

Abstract: A registration method includes acquiring, by a second CIMOM, parameters of a CIM provider from a first CIMOM by using information of a namespace to which a device to be configured belongs or device information of the device to be configured. The second CIMOM obtains identification information of the CIM provider in the parameters of the CIM provider through matching according to the device information or model information of the device to be configured. The second CIMOM acquires the CIM provider from the first CIMOM by using the obtained identification information of the CIM provider, and registering the CIM provider.

Abstract: Methods and devices associated with phase change memory include diodes operating as selector switches having a large driving current and high switching speed. A method of forming a semiconductor device includes providing a semiconductor substrate, defining a diode array region and a peripheral region on the semiconductor substrate, forming an N+ buried layer in the diode array region by performing an ion implantation process and an annealing process. The method also includes forming a semiconductor epitaxial layer on the N+ buried layer, forming deep trench isolations through the epitaxial layer and the N+ buried layer into a portion of the substrate in the first direction, and forming shallow trench isolations in the diode array region and in the peripheral region in the second direction. The shallow trench isolation has a depth equal to or greater than a thickness of the epitaxial layer.

Abstract: A method and system that enhances a user's performance while interacting with an interactive internet application such as a Massively Multiplayer Online (MMO) game is provided. The network latency experienced by users participating in the MMO game is minimized by dynamically determining an optimal transmission action for a message generated by the MMO game. In one embodiment, determining the optimal transmission action for a message includes dynamically determining the optimal number of redundant Forward Error Correction (FEC) packets to add to a message prior to transmitting a message to a receiving device. The optimal number of FEC packets is determined based on a wide range of varying network conditions.

Abstract: A hot plugging system and method are disclosed, in which a pluggable device transmits a request to a host before the pluggable device is pulled out so that the host may select whether preserving a device status, and preserves the device status and then shuts down a power of the pluggable device directly when preserving is selected while shuts down directly the power of the pluggable device when no preserving is selected so that the pluggable device is selected to be recovered or initialized according to the device status, existing or non-existing, after being inserted onto the host again, whereby achieving in a technical efficacy of promoting the hot plugging recovery.

Abstract: A bus pressure testing system and method thereof are disclosed, where a peripheral component interconnect express (PCI-E) device is used to initialize a central processing unit (CPU), peripheral component interface express (PCI-E) device interface and memory according to a testing model, generate a data transmission path corresponding to the testing model, produce a pressure data stream by using the PCI-E device, and test a bus for its pressure by flowing the pressure data transmission stream on the data transmission path. As such, the pressure testing may be enhanced in practicability.

Abstract: A buffer to buffer credit recovery mechanism is disclosed in which the ports involved in the credit recovery operation are synchronized while credit recovery is being enabled and during a credit recovery operation when credit recovery parameters are being reset. Buffer to buffer credit recovery involves exchanging primitive control signals and parameters during the login sequence to enable credit recovery. Once credit is lost; there may be a need for resetting a link to reset the credit recovery counters and BB credits. Both of these processes require synchronization between the ports involved in the credit recovery mechanism. This synchronization is achieved by enabling credit recovery during the Link Reset protocol negotiation and ensuring that no frames or R_RDYs are exchanged during the procedure.

Abstract: A current sensing circuit comprises a first input terminal and a second input terminal for introducing a subject current from a device coupled between the first and second input terminals; a first amplifier having a first input node coupled to the first input terminal via a protection resistor, a second input node coupled to the second input terminal, and a first output node coupled to the first input node via a capacitor, wherein the first amplifier has a current sensing path for sensing the subject current and converting the subject current into an output voltage that changes with the subject current; and a protection circuit coupled between the first and second input nodes of the first amplifier, wherein the protection circuit is configured to draw a protection current from the first input terminal through the protection resistor to at least partially offset the subject current.

Abstract: A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element.

Abstract: The present invention discloses a method and apparatus of determining air quality. The method comprising: determining at least one key area; acquiring a reference clear image, a training image under poor air quality and corresponding actual air quality index in at least one location of the key area; and training an air quality model of the key area based on feature extracted from the reference clear image and the training image and based on the actual air quality index. With the method and apparatus of the invention, air quality can be determined based on image.

Abstract: In an approach for identifying subsurface material layers, a computer processor: acquires a well log of a location to be explored, the log comprising data corresponding to multiple geophysical parameters, the data of each parameter comprising measurement values of the parameter at different depths underground; matches a reference data of each parameter corresponding to each of multiple layer transition types with the data of that parameter in the well log at depths underground, wherein each layer transition type indicates an upper material layer and a lower material layer, and the reference data is used to represent a variation trend of the parameter in a transitional zone conforming with the layer transition type; and according to the matching result, determines a layer transition type at the location to be explored and a depth of an interface between the upper material layer and the lower indicated by the layer transition type.

Abstract: The present invention provides a CD81 and OCLN double transgenic mouse and its construction method and use. The double transgenic mouse can be used to constitute acute and chronic HCV infection in a mouse model.

Abstract: A chemical-electromagnetic hybrid propeller with variable specific impulse. Fuel gas ejected out from a spraying tube of the chemical propeller through chemical propulsion enters an ionization chamber through a first magnetic mirror tube for ionization. The fuel gas after ionization is heated up by radio-frequency ion cyclotron waves in an ion cyclotron wave heating chamber so as to improve the kinetic energy. Then a second magnetic mirror tube is used, so that ions in the fuel gas after the ionization are heated up many times in a reciprocating manner between the magnetic mirror tubes, and ejected to generate forward propulsion force. By means of the propeller, the propulsion force and the specific impulse are greatly increased.

Abstract: Methods and devices associated with phase change memory include diodes operating as selector switches having a large driving current and high switching speed. A method of forming a semiconductor device includes providing a semiconductor substrate, defining a diode array region and a peripheral region on the semiconductor substrate, forming an N+ buried layer in the diode array region by performing an ion implantation process and an annealing process. The method also includes forming a semiconductor epitaxial layer on the N+ buried layer, forming deep trench isolations through the epitaxial layer and the N+ buried layer into a portion of the substrate in the first direction, and forming shallow trench isolations in the diode array region and in the peripheral region in the second direction. The shallow trench isolation has a depth equal to or greater than a thickness of the epitaxial layer.

Abstract: Methods and devices associated with a phase change memory include Schottky diodes operating as selectors having a low turn-on voltage, low sneak current and high switching speed. A method of forming a semiconductor device includes providing a semiconductor substrate having a diode array region and a peripheral device region, forming an N+ buried layer in the diode array region, forming a semiconductor epitaxial layer on the N+ buried layer, and forming deep trench isolations through the epitaxial layer and the N+ buried layer along a first direction. The method also includes forming shallow trench isolations in the diode array region and in the peripheral region along a second line direction. The method also includes forming an N? doped region between the deep and shallow trench isolations and forming a metal silicide on a surface of the N? doped region.

Abstract: Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on each of B-Raf, B-Raf V600E and c-Raf-1 protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line.

Abstract: A system and method automatically generates an object-oriented, textual program from a graphical model, and verifies the performance of the textual program as compared to the graphical model. The graphical model may have a plurality of interconnected blocks, and each block may have a plurality of parameters. One or more of the blocks are mapped to a system object, and the block's parameters are mapped to properties of the system object. An object-oriented, executable textual string is generated automatically for the block. The generated string includes at least one command to: instantiate a system object having functionality that matches the block; set one or more properties of the system object based on the block's parameters; and run the instantiated object.

Abstract: An information processing method, apparatus, and an electronic device are provided. The information processing method includes: obtaining a first input operation by a sensing apparatus, the first input operation corresponding to a first input action; determining the first input action based on the first input operation and generating a first instruction corresponding to the first input action; executing the first instruction for a first object corresponding to the first input operation; determining, based on the first input operation, that the first input action is completed and a gesture at the time of completion of the first input action is maintained; and continuing to execute the first instruction for the first object corresponding to the first input operation.

Abstract: In an approach for evaluating a predictive model, a computer identifies features of training samples in a set of training samples and selects at least one evaluation metric from a set of evaluation metrics as one or more available metrics based on the identified features. The computer applies a predictive model created based on the set of training samples to a set of test samples so as to calculate values of the one or more available metrics and evaluates the predictive model by using the one or more available metrics and the values of the available metrics. With the technical solutions described with respect to the embodiments of the present invention, one or more evaluation metrics that are applicable to specific training sample features may be determined from several evaluation metrics, so that users can precisely evaluate predictive models by using the determined evaluation metrics.