Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.

Abstract: A method of manufacturing a semiconductor device and a semiconductor device made by the method is disclosed. The method comprises forming a buried N+ layer in an upper portion of a P-type substrate; performing ion implantation on the buried N+ layer; annealing the buried N+ layer; forming an epitaxial semiconductor layer on the buried N+ layer through epitaxial deposition, wherein, an upper portion of said epitaxial semiconductor layer and a portion underlying said P+ region of said epitaxial semiconductor layer are doped to form a P+ region and an N? region, respectively. Increasing the ion implant dosage of the BNL layer, adjusting the method of annealing the BNL layer to increase the width of the BNL layer, or increasing the thickness of the EPI layer, reduces the vertical BJT current gain and suppressed the substrate leakage current.

Abstract: Embodiments include copolymers obtainable by reacting styrenic compound, maleic anhydride, and a cyclo-olefin, wherein the cyclo-olefin is selected from the group consisting of dicyclopentadiene, dicyclopentadiene derivatives, norbornene, norbornene derivatives, and combinations thereof. Embodiments include curable compositions having the copolymer, an epoxy compound and a solvent.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: A computer implemented method for fusing images taken by a plurality of cameras is disclosed, comprising the steps of: receiving a plurality of images of the same scene taken by the plurality of cameras; generating Laplacian pyramid images for each source image of the plurality of images; applying contrast normalization to the Laplacian pyramids images; performing pixel-level fusion on the Laplacian pyramid images based on a local salience measure that reduces aliasing artifacts to produce one salience-selected Laplacian pyramid image for each pyramid level; and combining the salience-selected Laplacian pyramid images into a fused image. Applying contrast normalization further comprises, for each Laplacian image at a given level: obtaining an energy image from the Laplacian image; determining a gain factor that is based on at least the energy image and a target contrast; and multiplying the Laplacian image by a gain factor to produce a normalized Laplacian image.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.

Abstract: The present invention provides a method for preparing spacer to reduce coupling interference in MOSFET, which includes the steps of: forming a gate oxide layer on the semiconductor substrate; forming a gate on the gate oxide layer; and depositing a low-K dielectric material on the gate and the semiconductor substrate, and doping with carbon during deposition to form a carbon-containing low-K dielectric layer and then forming the spacer by an etching process.

Abstract: A plurality of network addresses from a distributed client is obtained, at least a first portion of the obtained network addresses including resolved network address responses to distributed client requests for resolved network addresses corresponding to one or more network location indicators associated with a first web service. Test content is obtained, based on one or more of the network addresses included in the first portion. It is determined whether the obtained test content includes unauthorized content.

Abstract: A registration method includes acquiring, by a second CIMOM, parameters of a CIM provider from a first CIMOM by using information of a namespace to which a device to be configured belongs or device information of the device to be configured. The second CIMOM obtains identification information of the CIM provider in the parameters of the CIM provider through matching according to the device information or model information of the device to be configured. The second CIMOM acquires the CIM provider from the first CIMOM by using the obtained identification information of the CIM provider, and registering the CIM provider.

Abstract: A vapor chamber includes a sealed flattened casing containing working liquid therein, a wick structure arranged on an inner face of the casing, a supporting plate received in the casing and a plurality of supporting posts. The supporting plate defines a plurality of fixing holes therein. The supporting posts are engagingly received in the fixing holes of the supporting plate. Top and bottom ends of the supporting posts engage with the wick structure to reinforce a structure of the vapor chamber.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.

Abstract: A vapor chamber includes a sealed flattened casing containing working liquid therein, a wick structure arranged on an inner face of the casing, a plurality of supporting posts received in the casing and at least a metallic wire connecting the supporting posts. Each supporting post defines at least a channel therein. The at least a metallic wire engagingly extends through the channels of the supporting posts. Top and bottom ends of the supporting posts engage the wick structure to reinforce a structure of the vapor chamber.

Abstract: The manufacturing method of the high performance metal-oxide-metal according to the present invention resolves the problems of implementing high capacitance in the metal-oxide-metal region by the steps of filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and fulfilling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor. Using the present method, high-k material and low-k material within the same film layer are realized. High-k material region is used as MOM to achieve high capacitor c, thereby reducing the area used by chips and further improving the electrics performance.

Abstract: An electrical assembly having an elongated electrical component, such as a surge arrester, coupled to a grading device for distributing an electric field along the electrical component as a continuous operating voltage is applied to the electrical component. The grading device includes a grading body that is coupled to the electrical component. The grading body includes semi-conductive materials. The semi-conductive materials can be nonmetallic. The grading device has improved flashover resistance over conventional metal grading devices.

Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.

Abstract: The present application provides a method, an apparatus and a system for memory dump processing. The method comprises: invoking a first set of processing units to process a first stage of memory dump processing for each of memory blocks; invoking each set of processing units other than the first set of processing units to process a subsequent processing stage after completing the first stage respectively, to write the memory blocks into a storage device. The technical solutions provided in the present application enable processing each stage for each of the memory blocks in a pipeline manner, avoid instantaneous peak flow of disk I/O transmission and improve memory dump performance.

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.