Patents by Inventor Chao Zhang

Chao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Full composite insulator for electrical cutout
    Patent number: 8729396
    Abstract: An insulator for an electrical cutout having a fuse assembly, and methods of manufacturing. The insulator includes a weathershed housing and a single-piece full composite insulator body having no metal components. The insulator body includes a nonmetal composite polymer and a plurality of fibers. The insulators have improved mechanical strength and electrical performance over conventional insulators.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: May 20, 2014
    Assignee: Cooper Technologies Company
    Inventors: Chao Zhang, Alan P. Yerges, Stephen P. Hassler
  • Compounds modulating c-fms and/or c-kit activity and uses therefor
    Patent number: 8722702
    Abstract: Compounds active on the receptor protein tyrosine kinases c-kit and/or c-fms are provided herewith. Also provided herewith are compositions useful for treatment of c-kit mediated diseases or conditions and/or c-fms-mediated diseases or conditions, and methods for the use thereof.
    Type: Grant
    Filed: February 25, 2013
    Date of Patent: May 13, 2014
    Assignee: Plexxikon Inc.
    Inventors: Jiazhong Zhang, Prabha N. Ibrahim, Dean R. Artis, Ryan Bremer, Guoxian Wu, Marika Nespi, Chao Zhang
  • CURABLE COMPOSITIONS
    Publication number: 20140128545
    Abstract: Embodiments include curable compositions including an epoxy resin and a hardener component including a terpolymer having first constitutional unit, a second constitutional unit, and a third constitutional unit, where the epoxy group to the second constitutional unit has a molar ratio in a range of 1.0:1.0 to 2.7:1.0. Embodiments include prepregs that include a reinforcement component and the curable composition and an electrical laminate formed with the curable composition.
    Type: Application
    Filed: June 30, 2011
    Publication date: May 8, 2014
    Applicant: DOW Global Technologies LLC
    Inventors: Jia Wen Xiong, Hongyu Chen, Michael Mullins, Chao Zhang, Annie Gui Hong Liao, Wayne Yi Zhang
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20140128373
    Abstract: Compounds active on protein kinases are described, as well as methods of making and using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: February 1, 2012
    Publication date: May 8, 2014
    Inventors: Prabha N. Ibrahim, Chao Zhang, Wayne Spevak, Jiazhong Zhang, Guoxian Wu, Jack Lin, Hanna Cho, Marika Nespi, Songyuan Shi, Todd Ewing, Ying Zhang
  • PARTIAL VECTORIZATION COMPILATION SYSTEM
    Publication number: 20140122832
    Abstract: Generally, this disclosure provides technologies for generating and executing partially vectorized code that may include backward dependencies within a loop body of the code to be vectorized. The method may include identifying backward dependencies within a loop body of the code; selecting one or more ranges of iterations within the loop body, wherein the selected ranges exclude the identified backward dependencies; and vectorizing the selected ranges. The system may include a vector processor configured to provide predicated vector instruction execution, loop iteration range enabling, and dynamic loop dependence checking.
    Type: Application
    Filed: October 25, 2012
    Publication date: May 1, 2014
    Inventors: Tin-Fook Ngai, Chunxiao Lin, Yingzhe Shen, Chao Zhang
  • Compounds and methods for kinase modulation, and indications therefor
    Patent number: 8673928
    Abstract: and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds of Formula (I) or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on at least one Raf protein kinase. In certain aspects and embodiments, the described compounds are active in inhibiting proliferation of a Ras mutant cell line. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of B-Raf V600E mutant protein kinase, including melanoma, glioma, glioblastoma multiforme, pilocytic astrocytoma, colorectal cancer, thyroid cancer, lung cancer, ovarian cancer, prostate cancer, liver cancer, gallbladder cancer, gastrointestinal stromal tumors, biliary tract cancer, and cholangiocarcinoma.
    Type: Grant
    Filed: November 18, 2010
    Date of Patent: March 18, 2014
    Assignee: Plexxikon Inc.
    Inventors: Prabha N. Ibrahim, Wayne Spevak, Hanna Cho, Songyuan Shi, Chao Zhang, Ying Zhang
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20140038948
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: June 25, 2013
    Publication date: February 6, 2014
    Applicant: Plexxikon Inc.
    Inventors: Guoxian Wu, Jiazhong Zhang, Yong-Liang Zhu, Chao Zhang, Prabha N. Ibrahim, Songyuan Shi, Wayne Spevak, Dean R. Artis, James Tsai
  • ZAP-70 active compounds
    Patent number: 8642606
    Abstract: Compounds of Formula I: and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described. In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on one or more protein kinases, including a Zeta-chain-associated protein kinase 70 (ZAP-70), and any mutations thereof. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with increased expression of ZAP-70 cancer, B-cell chronic lymphocytic leukemia, aggressive B-cell chronic lymphocytic leukemia, an allergy-related disease or an allergic inflammation.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: February 4, 2014
    Assignee: Plexxikon Inc.
    Inventors: Prabha N. Ibrahim, Chao Zhang
  • Method and apparatus for memory dump processing and a memory dump system
    Patent number: 8627148
    Abstract: The present application provides a method, an apparatus and a system for memory dump processing. The method comprises: invoking a first set of processing units to process a first stage of memory dump processing for each of memory blocks; invoking each set of processing units other than the first set of processing units to process a subsequent processing stage after completing the first stage respectively, to write the memory blocks into a storage device. The technical solutions provided in the present application enable processing each stage for each of the memory blocks in a pipeline manner, avoid instantaneous peak flow of disk I/O transmission and improve memory dump performance.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: January 7, 2014
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Jun Li, Chao Zhang
  • Semiconductor device manufacturing method
    Patent number: 8586405
    Abstract: A method of manufacturing a semiconductor device and a semiconductor device made by the method is disclosed. The method comprises forming a buried N+ layer in an upper portion of a P-type substrate; performing ion implantation on the buried N+ layer; annealing the buried N+ layer; forming an epitaxial semiconductor layer on the buried N+ layer through epitaxial deposition, wherein, an upper portion of said epitaxial semiconductor layer and a portion underlying said P+ region of said epitaxial semiconductor layer are doped to form a P+ region and an N? region, respectively. Increasing the ion implant dosage of the BNL layer, adjusting the method of annealing the BNL layer to increase the width of the BNL layer, or increasing the thickness of the EPI layer, reduces the vertical BJT current gain and suppressed the substrate leakage current.
    Type: Grant
    Filed: February 9, 2012
    Date of Patent: November 19, 2013
    Assignee: Semiconductor Manufacturing International (Beijing) Corporation
    Inventors: Chao Zhang, Guanping Wu, Bo Liu, Zhitang Song
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20130303534
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: March 5, 2013
    Publication date: November 14, 2013
    Inventors: PRABHA N. IBRAHIM, DEAN R. ARTIS, RYAN BREMER, GASTON HABETS, SHUMEYE MAMO, MARIKA NESPI, CHAO ZHANG, JIAZHONG ZHANG, YONG-LIANG ZHU, REBECCA ZUCKERMAN, BRIAN WEST, YOSHISA SUZUKI, JIANMING TSAI, KLAUS-PETER HIRTH, GIDEON BOLLAG, WAYNE SPEVAK, HANNA CHO, SAMUEL J. GILLETTE, GUOXIAN WU, HONGYAO ZHU, SHENGHUA SHI
  • KINASE MODULATION AND INDICATIONS THEREFOR
    Publication number: 20130274259
    Abstract: Compounds, compositions and methods useful for treatment of Flt3-mediated diseases or conditions are provided herewith. Also provided herewith are methods for modulating the receptor protein tyrosine like kinase 3(Flt3).
    Type: Application
    Filed: March 11, 2013
    Publication date: October 17, 2013
    Inventors: Chao Zhang, Gideon Bollag, Gaston Habets, Jiazhong Zhang, Prabha N. Ibrahim, Guoxian Wu
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20130261117
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: April 19, 2013
    Publication date: October 3, 2013
    Inventors: Prabha N. Ibrahim, Chao Zhang, Jiazhong Zhang, Jianming Tsai, Klaus-Peter Hirth, Gideon Bollag, Wayne Spevak
  • Multi-ary error-correcting code transmitting and receiving apparatuse, data transmission system, and relevant method
    Patent number: 8548027
    Abstract: The embodiments of the present invention disclose an apparatus for transmitting multi-ary error-correcting codes, an apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods to simplify operations. The apparatus for transmitting multi-ary error-correcting codes includes: a multi-ary channel encoder, adapted to perform multi-ary coding for source data frames of a user to obtain encoded sequences; a symbol mapper, adapted to perform symbol mapping for the encoded sequences to obtain symbol sequences; and a spreading and interleaving unit, adapted to spread and interleave the symbol sequences. Moreover, a corresponding apparatus for receiving multi-ary error-correcting codes, a data transmission system, and relevant methods are provided.
    Type: Grant
    Filed: April 30, 2010
    Date of Patent: October 1, 2013
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Yanxing Zeng, Raymond W. K. Leung, Ying Jin, Chao Zhang
  • COMPOUNDS AND METHODS FOR KINASE MODULATION, AND INDICATIONS THEREFOR
    Publication number: 20130237531
    Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.
    Type: Application
    Filed: April 19, 2013
    Publication date: September 12, 2013
    Inventors: Guoxian Wu, Jiazhong Zhang, Chao Zhang, Prabha N. Ibrahim, Songyuan Shi, Wayne Spevak, James Tsai
  • Poly profile engineering to modulate spacer induced stress for device enhancement
    Patent number: 8519445
    Abstract: The present invention provides a method of inducing stress in a semiconductor device substrate by applying an ion implantation to a gate region before a source/drain annealing process. The source/drain region may then be annealed along with the gate which will cause the gate to expand in certain areas due to said ion implantation. As a result, stress caused by said expansion of the gate is transferred to the channel region in the semiconductor substrate.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: August 27, 2013
    Assignee: GlobalFoundries Singapore Pte. Ltd.
    Inventors: Vincent Ho, Wenhe Lin, Young Way Teh, Yong Kong Siew, Bei Chao Zhang, Fan Zhang, Haifeng Sheng, Juan Boon Tan
  • Manufacturing method of a high performance metal-oxide-metal
    Patent number: 8507355
    Abstract: A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.
    Type: Grant
    Filed: December 29, 2011
    Date of Patent: August 13, 2013
    Assignee: Shanghai Huali Microelectronics Corporation
    Inventors: Youcun Hu, Lei Li, Chaos Zhang, Feng Ji, Yuwen Chen
  • METHOD OF FABRICATING DUAL TRENCH ISOLATED EPITAXIAL DIODE ARRAY
    Publication number: 20130189799
    Abstract: The present invention discloses a method of fabricating dual trench isolated epitaxial diode array. This method starts with the formation of heavily-doped first conductivity type regions and heavily-doped second conductivity type regions on the substrate, followed by epitaxial growth, then the formation of the isolations between diode array word lines by deep trench etch and the formation of the isolations between bit lines vertical to deep trenches by shallow trench etch, and finally the formation of separate diode array cells in the regions enclosed by deep and shallow trench isolations by ion implantation. This invention also provides a method of preventing the crosstalk current between adjacent word lines and bit lines of epitaxial diode arrays isolated by foregoing dual shallow trenches.
    Type: Application
    Filed: June 23, 2011
    Publication date: July 25, 2013
    Inventors: Chao Zhang, Zhitang Song, Xudong Wan, Bo Liu, Guanping Wu, Ting Zhang, Zuoya Yang, Zhifeng Xie
  • Method of fabricating dual trench isolated epitaxial diode array
    Patent number: 8476085
    Abstract: The present invention discloses a method of fabricating dual trench isolated epitaxial diode array. This method starts with the formation of heavily-doped first conductivity type regions and heavily-doped second conductivity type regions on the substrate, followed by epitaxial growth, then the formation of the isolations between diode array word lines by deep trench etch and the formation of the isolations between bit lines vertical to deep trenches by shallow trench etch, and finally the formation of separate diode array cells in the regions enclosed by deep and shallow trench isolations by ion implantation. This invention also provides a method of preventing the crosstalk current between adjacent word lines and bit lines of epitaxial diode arrays isolated by foregoing dual shallow trenches.
    Type: Grant
    Filed: June 23, 2011
    Date of Patent: July 2, 2013
    Assignee: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
    Inventors: Chao Zhang, Zhitang Song, Xudong Wan, Bo Liu, Guanping Wu, Ting Zhang, Zuoya Yang, Zhifeng Xie
  • PDE4B inhibitors and uses therefor
    Patent number: 8470821
    Abstract: Compounds active on phosphodiesterase PDE4B are provided. Also provided herewith are compositions useful for treatment of PDE4B-mediated diseases or conditions, and methods for the use thereof.
    Type: Grant
    Filed: July 20, 2009
    Date of Patent: June 25, 2013
    Assignee: Plexxikon Inc.
    Inventors: Prabha N. Ibrahim, Hanna Cho, Bruce England, Sam Gillette, Dean R. Artis, Rebecca Zuckerman, Chao Zhang