Abstract: Implementations of pins for semiconductor packages may include: an upper contact portion having a contact surface coupled with a pin receiver; a lower portion having a vertical stop and at least two curved legs; a horizontal base coupled directly to the at least two curved legs and configured to be soldered to a substrate to mechanically and electrically couple the pin to the substrate, the horizontal base having an upper contact surface, and; a gap between a bottom contact surface of the vertical stop and the upper contact surface of the horizontal base.

Abstract: Implementations of methods of forming a plurality of reinforced die may include forming a plurality of die on a substrate and patterning a metal gang frame to form a plurality of metal plates. The plurality of metal plates may correspond to the plurality of die. The method may include coupling the metal gang frame over the plurality of die and singulating the plurality of die. Each die of the plurality of die may include the corresponding metal plate from the plurality of metal plates coupled over the plurality of die.

Abstract: In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.

Abstract: A semiconductor package assembly having a connecting clip disposed on both a first material stack and a second material stack having different thicknesses and disposed on a conducting substrate. This connecting clip has a first portion disposed on to the first material stack and second portion disposed on the second material stack, such that the surfaces of the first portion and second portion opposite the conducting substrate are at the same perpendicular distance from the conducting substrate. For example, in some implementations, when the thickness of the second material stack is smaller than the thickness of the first material stack, the second portion of the connecting clip may include a vertical support disposed on the second material stack to equalize the heights of the surfaces of the first portion and second portion of the connecting clip.

Abstract: Implementations of semiconductor packages may include: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die, wherein the pin includes a reversibly elastically deformable lower portion configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate.

Abstract: Implementations of power modules may include: a substrate having a first side and a second side. The power module may include a plurality of leads coupled to a second side of the substrate and a molding compound over a portion of five or more surfaces of the substrate. The power module may also include an opening extending from a first side of the substrate to an outer edge of the molding compound. The opening may be configured to receive a coupling device and the coupling device may be configured to couple with a heat sink or a package support.

Abstract: In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.

Abstract: Implementations of pins for semiconductor packages may include: an upper contact portion having a contact surface configured to mechanically and electrically couple with a pin receiver; a lower portion having a vertical stop and at least two curved legs; a horizontal base coupled directly to the at least two curved legs and configured to be soldered to a substrate to mechanically and electrically couple the pin to the substrate, the horizontal base having an upper contact surface, and; a gap between a bottom contact surface of the vertical stop and the upper contact surface of the horizontal base; wherein the at least two curved legs are configured to flex to allow the bottom contact surface of the vertical stop to move toward the upper contact surface of the horizontal base in response to a pressure applied to the pin along a direction collinear with a longest length of the pin toward the upper contact surface, and; wherein the vertical stop is configured to stop movement of the pin when the bottom contact s

Abstract: Example implementations relate to an electronic module can include a first direct bonded metal (DBM) substrate, a second DBM substrate, a housing member, and a plurality of connection terminals. The first DBM substrate and second DBM substrate can be aligned along a same plane. The housing member can be coupled to the first substrate and the second substrate and the housing member can include a plurality of openings in a surface of the housing member. The plurality of connection terminals can be electrically coupled to at least one of the first DBM substrate and the second DBM substrate, in which a connection terminal from the plurality of terminals can extend through an opening from the plurality of openings of the housing member.

Abstract: Implementations of semiconductor packages may include: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die, wherein the pin includes a reversibly elastically deformable lower portion configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate.

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: Implementations of semiconductor packages may include: a die coupled to a substrate; a housing coupled to the substrate and at least partially enclosing the die within a cavity of the housing, and; a pin fixedly coupled to the housing and electrically coupled with the die, wherein the pin includes a reversibly elastically deformable lower portion configured to compress to prevent a lower end of the pin from lowering beyond a predetermined point relative to the substrate when the housing is lowered to be coupled to the substrate.

Abstract: Implementations of pins for semiconductor packages may include: an upper contact portion having a contact surface configured to mechanically and electrically couple with a pin receiver; a lower portion having a vertical stop and at least two curved legs; a horizontal base coupled directly to the at least two curved legs and configured to be soldered to a substrate to mechanically and electrically couple the pin to the substrate, the horizontal base having an upper contact surface, and; a gap between a bottom contact surface of the vertical stop and the upper contact surface of the horizontal base; wherein the at least two curved legs are configured to flex to allow the bottom contact surface of the vertical stop to move toward the upper contact surface of the horizontal base in response to a pressure applied to the pin along a direction collinear with a longest length of the pin toward the upper contact surface, and; wherein the vertical stop is configured to stop movement of the pin when the bottom contact s

Abstract: A method for fabricating a chip scale package, comprising: providing a wafer; applying a polymer resin on at least part of a first surface of the wafer and to one or more sides of the wafer; and applying a compression mold on at least part of a second surface of the wafer and to one or more sides of the wafer, said first and second surfaces opposing each other.

Abstract: A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.

Abstract: One illustrative method embodiment includes: providing a direct bonded copper (DBC) substrate including a plurality of copper traces; providing a guide plate having protrusions on a surface of the guide plate; mounting hollow bush rings onto the protrusions; mounting the bush rings onto the copper traces by aligning the protrusions of the guide plate with solder units on said copper traces; attaching the bush rings and one or more dies to the copper traces by simultaneously reflowing said solder units and other solder units positioned between the dies and the copper traces; and after said simultaneous reflow, removing the protrusions from the bush rings.

Abstract: A method, in some embodiments, comprises: providing a direct bonded copper (DBC) substrate including a plurality of copper traces; providing a guide plate having protrusions on a surface of the guide plate; mounting hollow bush rings onto the protrusions; mounting the bush rings onto the copper traces by aligning the protrusions of the guide plate with solder units on said copper traces; attaching the bush rings and one or more dies to the copper traces by simultaneously reflowing said solder units and other solder units positioned between the dies and the copper traces; and after said simultaneous reflow, removing the protrusions from the bush rings.

Abstract: Implementations of pins for semiconductor packages may include: an upper contact portion having a contact surface configured to mechanically and electrically couple with a pin receiver; a lower portion having a vertical stop and at least two curved legs; a horizontal base coupled directly to the at least two curved legs and configured to be soldered to a substrate to mechanically and electrically couple the pin to the substrate, the horizontal base having an upper contact surface, and; a gap between a bottom contact surface of the vertical stop and the upper contact surface of the horizontal base; wherein the at least two curved legs are configured to flex to allow the bottom contact surface of the vertical stop to move toward the upper contact surface of the horizontal base in response to a pressure applied to the pin along a direction collinear with a longest length of the pin toward the upper contact surface, and; wherein the vertical stop is configured to stop movement of the pin when the bottom contact s

Abstract: In a general aspect, an apparatus can include a metal layer, a first semiconductor die, a second semiconductor die, a molding compound, a first electrical contact and a second electrical contact. The first semiconductor die can have a first side disposed on the metal layer. The second semiconductor die can have a first side disposed on the metal layer. The metal layer can electrically couple the first side of the first semiconductor die with the first side of the second semiconductor die. The molding compound can at least partially encapsulate the metal layer, the first semiconductor die and the second semiconductor die. The first electrical contact can be to a second side of the first semiconductor die and disposed on a surface of the apparatus. The second electrical contact can be to a second side of the second semiconductor die and disposed on the surface of the apparatus.

Abstract: A leadframe includes a frame, a die pad, a contact including a flank adjacent to the frame, a first tie bar between the frame and die pad, and a second tie bar between the die pad and contact. The leadframe is disposed over a carrier. A semiconductor die is disposed over the die pad. An encapsulant is deposited over the leadframe and semiconductor die including between the carrier and half-etched portions of the leadframe. A first trench is formed in the encapsulant to remove a portion of the frame and expose the flank of the contact. A conductive layer is formed over the flank by electroplating. A second trench is formed in the encapsulant through the second tie bar after forming the conductive layer.