Patents by Inventor Chen Zhang

Chen Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Evaluating workload for database migration recommendations
    Patent number: 11615061
    Abstract: A workload of a database may be evaluated to provide a database migration recommendation. A request for a recommendation to migrate a database to a new host may be received. An evaluation of the workload of a client application of the database at a current host may be performed. The migration recommendation may be returned based on the evaluation of the workload of the client application of the database. In some embodiments, the migration recommendation may trigger an automated migration of the database to the new host.
    Type: Grant
    Filed: August 3, 2018
    Date of Patent: March 28, 2023
    Assignee: Amazon Technologies, Inc.
    Inventors: Sameer Malik, Danial George Neault, Rostislav Babocichin, Harpreet Kaur Chawla, Knievel Co, Ilia Gilderman, Ramya Kaushik, Edward Paul Murray, Siva Raghupathy, Venu Reddy, Samujjwal Roy, Eran Schitzer, Michael D. Soo, Arun Kumar Thiagarajan, John Winford, Chen Zhang
  • VTFET WITH BURIED POWER RAILS
    Publication number: 20230085838
    Abstract: A semiconductor device is provided. The semiconductor device includes a buried power rail, a buried oxide (BOX) layer formed on the buried power rail, a plurality of channel fins formed on the BOX layer, a bottom epitaxial layer formed on the BOX layer and between the channel fins such that the BOX layer is between the buried power rail and the bottom epitaxial layer, a gate stack formed over the bottom epitaxial layer and contacting the channel fins, the gate stack including a work function metal (WFM) layer and a high-? layer, and a top epitaxial layer formed on the gate stack. In the semiconductor device, between two adjacent ones of the channel fins the BOX layer has an opening so that the bottom epitaxial layer is electrically connected to the buried power rail.
    Type: Application
    Filed: September 17, 2021
    Publication date: March 23, 2023
    Inventors: Chen Zhang, Ruilong Xie, Heng Wu, Junli Wang, Brent Anderson
  • Binding Segment Identifier Processing Method and Device
    Publication number: 20230086279
    Abstract: A binding segment identifier processing method and a device are provided. The method includes a network device receives a message sent by a controller, where the message includes type information and a segment identifier, and the type information indicates that the segment identifier is a binding segment identifier BSID. The network device performs a processing action on the BSID based on the type information. According to embodiments of this application, the network device can identify the BSID, to resolve a technical problem that an incorrect processing result is caused when a segment identifier list of the network device includes the BSID.
    Type: Application
    Filed: November 23, 2022
    Publication date: March 23, 2023
    Inventors: Ka Zhang, Chen Zhang, Zhibo Hu, Sheng Fang, Zuliang Wang
  • THREE-DIMENSIONAL, MONOLITHICALLY STACKED FIELD EFFECT TRANSISTORS FORMED ON THE FRONT AND BACKSIDE OF A WAFER
    Publication number: 20230086967
    Abstract: A semiconductor device fabrication method is provided. The semiconductor device fabrication method includes frontside semiconductor device processing on a frontside of a wafer, flipping the wafer, backside semiconductor device processing on a backside of the wafer and backside and frontside contact formation processing on the backside and frontside of the wafer, respectively.
    Type: Application
    Filed: September 22, 2021
    Publication date: March 23, 2023
    Inventors: Sung Dae Suk, SOMNATH GHOSH, Chen Zhang, Junli Wang, Devendra K. Sadana, Dechao Guo
  • Battery state detection device and vehicle device
    Patent number: 11609274
    Abstract: A vehicle-mounted device for detecting battery state comprises a controller, a load unit, and a switch unit. The load unit is coupled to the battery, the switch unit is coupled between the battery and the load unit. The controller can control the switch unit to disconnect or connect the battery and the load unit at a predefined frequency. The controller can switch the load unit to generate ripple voltage on the battery, and measure the ripple voltage of each battery cell, an abnormal state of a battery can be determined according to the ripple voltage of each battery cell.
    Type: Grant
    Filed: July 8, 2021
    Date of Patent: March 21, 2023
    Assignee: GUANGZHOU AUTOMOBILE GROUP CO., LTD.
    Inventors: Chen Zhang, Meng Yao, Meng Wang, Xiaohui Li, Bozhi Yang
  • ANTI-INFLUENZA VIRUS COMPOUND, PREPARATION METHOD AND USE THEREOF
    Publication number: 20230079045
    Abstract: Provided are a compound of formula (I-a), an isomer thereof or a pharmaceutically acceptable salt thereof as a Hemagglutinin inhibitor, and a preparation method thereof. The compound is useful for preparing a medicament for treating a disease related to Hemagglutinin.
    Type: Application
    Filed: August 24, 2020
    Publication date: March 16, 2023
    Applicant: Sichuan Haisco Pharmaceutical Co., Ltd.
    Inventors: Yao Li, Lei Chen, Guobiao Zhang, Wenjing Wang, Zongjun Shi, Gang Hu, Haitao Huang, Haodong Wang, Bo Xu, Xiaobo Zhang, Guoliang LIU, Dengyu Zheng, Shilin Huang, Jianfei Zhao, Changwei Song, Chen Zhang, Fei Ye, Jia Ni, Pangke Yan
  • Modular Robot
    Publication number: 20230085608
    Abstract: Provided is a robot including a chassis; a set of wheels coupled to the chassis; a plurality of sensors; a processor; and a tangible, non-transitory, machine readable medium storing instructions that when executed by the processor effectuates operations. The operations include capturing, with an image sensor disposed on the robot, a plurality of images of an environment of the robot as the robot navigates within the environment; identifying, with the processor, an obstacle type of an obstacle captured in an image based on a comparison between features of the obstacle and features of obstacles with different obstacles types stored in a database; and determining, with the processor, an action of the robot based on the obstacle type of the obstacle.
    Type: Application
    Filed: November 9, 2022
    Publication date: March 16, 2023
    Applicant: AI Incorporated
    Inventors: Ali Ebrahimi Afrouzi, Lukas Robinson, Chen Zhang, Brian Highfill, Amin Ebrahimi Afrouzi
  • VERTICAL FIELD EFFECT TRANSISTOR INVERTER WITH SINGLE FIN DEVICE
    Publication number: 20230073990
    Abstract: Embodiments of the invention include a vertical field-effect transistor (VTFET) inverter. The VTFET inverter may include a p-channel field-effect transistor (P-FET) with a P-FET top source/drain and a P-FET bottom source/drain. The VTFET inverter may also include an n-channel field-effect transistor (N-FET) comprising an N-FET top source/drain and a N-FET bottom source/drain. The VTFET inverter may also include a buried contact located at a boundary between the P-FET bottom source/drain and the N-FET bottom source/drain. The VTFET inverter may also include a Vout contact electrically connected to one of the P-FET bottom source/drain and the N-FET bottom source/drain.
    Type: Application
    Filed: August 25, 2021
    Publication date: March 9, 2023
    Inventors: Junli Wang, Ruilong Xie, Alexander Reznicek, Chen Zhang
  • METHOD FOR PROCESSING AUDIO SIGNAL AND ELECTRONIC DEVICE
    Publication number: 20230070037
    Abstract: A method for processing an audio signal and an electronic device, relate to the field of audio and video technology. The method includes: detecting beat information of the audio signal; and obtaining virtual surround sound for the audio signal by performing a convolution operation on a head-related transfer function and the audio signal based on the beat information of the audio signal.
    Type: Application
    Filed: August 30, 2022
    Publication date: March 9, 2023
    Inventors: Xinyue FAN, Chen ZHANG, Xiguang ZHENG
  • HYBRID COMPLEMENTARY FIELD EFFECT TRANSISTOR DEVICE
    Publication number: 20230075966
    Abstract: A stacked transistor device is provided. The stacked transistor device includes a nanosheet transistor device on a substrate; and a fin field effect transistor device over the nanosheet transistor device to form the stacked transistor device, wherein the fin field effect transistor device is configured to have a current flow through the fin field effect transistor device perpendicular to a current flow through the nanosheet transistor device.
    Type: Application
    Filed: September 7, 2021
    Publication date: March 9, 2023
    Inventors: Ruilong Xie, Chen Zhang, Jingyun Zhang, Junli Wang, Pietro Montanini
  • HYBRID COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR NANOSHEET DEVICE
    Publication number: 20230060790
    Abstract: A semiconductor device formed by forming a stack of alternating horizontal nanosheet layers, recessing the stack for an n-type field effect transistor (nFET), growing crystalline semiconductor adjacent to the stack, forming vertical nanosheets from the crystalline semiconductor, forming inner spacers between the vertical nanosheets, and forming a high-k metal gate structure around the horizontal nanosheets and the vertical nanosheets.
    Type: Application
    Filed: September 1, 2021
    Publication date: March 2, 2023
    Inventors: Chen Zhang, Ruilong Xie, Tenko Yamashita
  • NITROGEN-CONTAINING HETEROCYCLIC AUTOTAXIN INHIBITOR, AND COMPOSITION CONTAINING SAME AND USE THEREOF
    Publication number: 20230069174
    Abstract: Disclosed are a nitrogen-containing heterocyclic compound as shown in formula (I), or a stereoisomer, a solvate, a deuterated form, a pharmaceutically acceptable salt, or a cocrystal thereof or a pharmaceutical composition containing same, and the use thereof in the preparation of a drug for treating/preventing diseases mediated by autotaxin. Each group in formula (I) is as defined in the description.
    Type: Application
    Filed: December 10, 2020
    Publication date: March 2, 2023
    Inventors: Yao LI, Zongjun SHI, Wenjing WANG, Yongli WANG, Yunpeng PEI, Changwei SONG, Yonghong LI, Pingming TANG, Yan YU, Chen ZHANG, Jia NI, Pangke YAN
  • FET WITH REDUCED PARASITIC CAPACITANCE
    Publication number: 20230063973
    Abstract: An apparatus comprising a plurality of FET columns located on a substrate. A source/drain layer located around the base of the plurality of FET columns. A dielectric layer located around the source/drain layer, wherein a portion of the dielectric layer that is sandwiched between a first portion of the source/drain layer and a second portion of the source/drain layer. A gate layer, wherein the gate layer has a first portion located on top of the source/drain layer, and wherein the gate layer has a second portion located on top of the portion of the dielectric layer that is sandwiched between a first portion of the source/drain layer and a second portion of the source/drain layer.
    Type: Application
    Filed: September 1, 2021
    Publication date: March 2, 2023
    Inventors: Ruilong Xie, Chen Zhang, Brent Anderson, Robert Robison, Ardasheir Rahman, Hemanth Jagannathan
  • DYNAMIC VEHICLE OPERATION
    Publication number: 20230055012
    Abstract: Data from a vehicle subsystem are input to a machine learning program trained to output a plurality of temporal pattern vectors. The temporal pattern vectors are input to an attention-based encoder trained to output a latent feature matrix. Each of the latent feature vectors is assigned to a respective one of a plurality of clusters. Based on the assigned clusters, an operation value is output to a controller of the vehicle subsystem.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 23, 2023
    Applicant: Ford Global Technologies, LLC
    Inventors: Lijun Wang, Chen Zhang, Kai Wu, Yan Wang
  • Voice processing method, apparatus, electronic device, and storage medium
    Patent number: 11587574
    Abstract: Provided in the present disclosure are a voice processing method, an apparatus, an electronic device, and a storage medium, the method comprising: detecting the working state of a current call system, and when the working state is a two-end speaking state or a remote-end speaking state, performing compression processing on a subsequent remote-end voice signal, acquiring a near-end voice signal by means of a microphone, performing echo processing on the basis of the near-end voice signal and the compression-processed remote-end voice signal to obtain an echo-processed near-end voice signal and a remaining echo signal, performing non-linear suppression processing on the near-end voice signal and the remaining echo signal, and performing gain control on the suppression-processed near-end voice signal.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: February 21, 2023
    Assignee: Beijing Dajia Internet Information Technology Co., Ltd.
    Inventors: Chen Zhang, Pei Dong
  • Watch band with adjustable color
    Patent number: 11586153
    Abstract: Watch bands described herein include electrochromic features that provide adjustable color control based on an applied voltage to offer a variety of colors and color combinations to be displayed by a single band. The user or a control system can control, select, and/or adjust one or more colors of the watch band for visual display. Accordingly, a variety of colors can be displayed at different times without requiring different watch bands for each color or color combination. The color changing features can be used as a visual output of information from the watch to the user.
    Type: Grant
    Filed: June 27, 2018
    Date of Patent: February 21, 2023
    Assignee: APPLE INC.
    Inventors: Zhengyu Li, Chia Chi Wu, Chen Zhang, Qiliang Xu
  • LOCAL VERTICAL INTERCONNECTS FOR MONOLITHIC STACK TRANSISTORS
    Publication number: 20230051674
    Abstract: A method for forming a stacked transistor includes forming a sacrificial cap over a first interconnect of a lower level transistor. The method further includes forming an upper level transistor above the sacrificial cap. The method further includes removing the sacrificial cap to form an opening such that the opening is delimited by the upper level transistor. The method further includes forming a second interconnect in the opening such that the second interconnect is in direct contact with the first interconnect.
    Type: Application
    Filed: August 13, 2021
    Publication date: February 16, 2023
    Inventors: Heng Wu, Ruilong Xie, Chen Zhang, Eric Miller
  • Robotic vacuum with rotating cleaning apparatus
    Patent number: 11576543
    Abstract: A robotic surface cleaning device is provided, including a casing, a chassis, a set of wheels coupled to the chassis to drive the robotic surface cleaning device, a control system to instruct movement of the set of wheels, a battery to provide power to the robotic surface cleaning device, one or more sensors, a processor, rotating assembly, including a plate supported by a base of the casing, rotating mechanism to rotate the plate; and one or more cleaning apparatuses mounted to a first side of the plate.
    Type: Grant
    Filed: August 6, 2019
    Date of Patent: February 14, 2023
    Inventors: Ali Ebrahimi Afrouzi, Soroush Mehrnia, Azadeh Afshar Bakooshli, Lukas Fath, Chen Zhang, Brian Highfill
  • COMPLEMENTARY FIELD EFFECT TRANSISTOR DEVICES
    Publication number: 20230038957
    Abstract: A complementary metal-oxide semiconductor device formed by fabricating CMOS nanosheet stacks, forming a dielectric pillar dividing the CMOS nanosheet stacks, forming CMOS FET pairs on either side of the dielectric pillar, and forming a gate contact for at least one of the FETs.
    Type: Application
    Filed: August 5, 2021
    Publication date: February 9, 2023
    Inventors: Ruilong Xie, Julien Frougier, Heng WU, Chen Zhang, Kangguo Cheng
  • Tunnel field-effect transistor with reduced subthreshold swing
    Patent number: 11575042
    Abstract: A method for manufacturing a semiconductor device includes forming a source layer on a semiconductor substrate, forming a channel layer on the source layer, and forming a drain layer on the channel layer. The source, channel and drain layers are patterned into at least one fin, and a cap layer is formed on a lower portion of the at least one fin. The lower portion of the at least one fin includes the source layer and part of the channel layer. The method further includes forming a gate structure comprising a gate dielectric layer and a gate conductor on the at least one fin and on the cap layer. The cap layer is positioned between the lower portion of the at least one fin and the gate dielectric layer.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: February 7, 2023
    Assignee: International Business Machines Corporation
    Inventors: Xin Miao, Chen Zhang, Kangguo Cheng, Wenyu Xu