Abstract: Provided is a robot including: a chassis; wheels; electric motors; a network card; sensors; a processor; and a tangible, non-transitory, machine readable medium storing instructions that when executed by the processor effectuates operations including: capturing, with at least one exteroceptive sensor, a first image and a second image; determining, with the processor, an overlapping area of the first image and the second image by comparing the raw pixel intensity values of the first image to the raw pixel intensity values of the second image; combining, with the processor, the first image and the second image at the overlapping area to generate a digital spatial representation of the environment; and estimating, with the processor using a statistical ensemble of simulated positions of the robot, a corrected position of the robot to replace a last known position of the robot within the digital spatial representation of the environment.

Abstract: Substituted piperidines as BTK inhibitors, a preparation method thereof and a pharmaceutical application thereof. The substituted piperidines is a compound represented by a general formula (I) or a stereoisomer or a pharmaceutically acceptable salt thereof, and the substituted piperidines is used to treat BTK-related diseases such as tumors or autoimmune system diseases.

Abstract: A method and a device for non-contact determination of temporal color and/or intensity variations in objects in a scene. Monoscopic overview images of the scene are detected with first and second overview cameras from two different viewing directions, and calculated to form a stereoscopic overview map. A two-dimensional detail image is detected by a detail camera from a third viewing direction and is projected on the overview map. Measurement surfaces in the scene are selected based on criteria which are predetermined depending on parameters on which conclusions are to be drawn from the color variations and/or intensity variations. Light emitted by the measurement surfaces is detected in a spatially-resolved and wavelength-resolved manner in a continuously-captured series of measurement images in a predetermined spectral range. The measurement surfaces are analyzed in the measurement images with respect to temporal variation of the intensity and/or color of the light, and the results displayed.

Abstract: Embodiments of the present application provide a medical image synthesis device and method. According to an embodiment, a method includes acquiring a first medical image and a second medical image and registering the first medical image with the second medical image. The method includes determining a first parameter value at each pixel location on the registered first medical image and a second parameter value at each pixel location on the second medical image. The method includes multiplying the first parameter value with the second parameter value at the same pixel location on the registered first medical image and the second medical image and generating synthetic image data based on the multiplication result.

Abstract: A top via interconnect with enlarged via top and a fabrication method therefor. One embodiment may comprise a semiconductor interconnect structure, comprising a first dielectric layer having a top surface, a bottom metal line formed in the dielectric layer, a second dielectric layer deposited above the top surface of the first dielectric layer, a via etched through the second dielectric layer above the bottom metal line, wherein the via exposes at least a portion of the top surface of the first dielectric layer, and a metal stud in the via that extends over the exposed at least a portion of the first dielectric layer. The metal stud in the via may further comprise a shoulder surface and a convex top surface.

Abstract: A stacked semiconductor device comprising a lower source/drain epi located on top of a bottom dielectric layer. An isolation layer located on top of the lower source/drain epi and an upper source/drain epi located on top of the isolation layer. A lower electrical contact that is connected to the lower source/drain epi, wherein the lower electrical contact is in direct contact with multiple side surfaces of the lower source/drain epi.

Abstract: A technique manages objects in a software development project. In particular, in response to receiving a commit request for committing a group of objects, a group of historical commit requests associated with the group of objects are acquired based on a commit history, wherein historical commit requests in the group of historical commit requests involve the group of objects. A candidate object is selected from at least one object involved in the historical commit requests that is different from the group of objects. An association relationship between the candidate object and the group of objects is determined. The candidate object is identified as a missing object in response to determining that the association relationship satisfies a predetermined condition, the missing object indicating an object associated with the commit request but not included in the commit request. Accordingly, objects that are missing in a commit request can be automatically checked.

Abstract: A spacecraft nutation inhibition method for low-orbit geomagnetic energy storage in-orbit delivery includes: S1, enabling a delivery connection rod to be slidably connected to two mass blocks in a length direction, and adjusting the center of mass of a spacecraft system to pass through a main connecting shaft; S2, respectively measuring, calibrating and adjusting the center of mass and the principal axis of inertia of the delivery connection rod that is to deliver the space target or de-orbit debris; S3, carrying out energy storage delivery; S4, respectively adjusting the center of mass and the moment of inertia of the delivery connection rod after delivering the space target or de-orbit debris; S5, carrying out energy dissipation and unloading; and S6, enabling the spacecraft system to prepare to grab the next space target or de-orbit debris and proceeding to the next delivery work cycle.

Abstract: A semiconductor device comprising a plurality of nanosheet transistor channels adjacent to a source/drain. An inner spacer located between each of the plurality of nanosheet transistor channels and the inner spacer wraps around the end of each of the plurality of nanosheet transistors, wherein the source/drain is in contact with the inner spacer and each of the plurality of nanosheet transistor channels. A gate surrounding each of the plurality of nanosheet transistor channels and an electrical contact connected to the source/drain. An ultra low-k spacer located between the gate and the source/drain, wherein the ultra low-k spacer reduces the parasitic capacitance of the nanosheet transistor.

Abstract: A method of leak detection for oil and gas pipeline based on excitation response and system thereof includes: applying an active excitation signal (a pressure pulse directly input by human) or a passive excitation signal (a pressure fluctuation caused by opening and closing valves, etc.) to an oil and gas pipeline with existing leakage points, the excitation signal is reflected at the pipeline boundary and the leakage, and the reflected pressure wave continues to propagate to upstream and downstream, and finally is collected by the dynamic pressure transducer, then the existing leakage of the pipeline is detected and positioned by analyzing the transient response signal and the reflected pressure wave of leakage signal.

Abstract: An approach for creating a buried local interconnect around a DDB (double diffusion break) to reduce parasitic capacitance on a semiconductor device is disclosed. The approach utilizes a metal, as the local interconnect, buried in a cavity around the DDB region of a semiconductor substrate. The metal is disposed by two dielectric layers and the substrate. The two dielectric layers are recessed beneath two gate spacers. The buried local interconnect is recessed into the cavity where the top surface of the interconnect is situated below the top surface of the surrounding S/D (source/drain) epi (epitaxy). The metal of the local interconnect can be made from W, Ru or Co.

Abstract: A thermal management system includes a refrigerant loop, a motor coolant loop, and a battery coolant loop. The refrigerant loop includes a first refrigerant main-line, a second refrigerant main-line, a first refrigerant branch, and a second refrigerant branch. The first refrigerant main-line includes a compressor, the second refrigerant main-line includes a cabin condenser, the first refrigerant branch includes a cabin evaporator, the second refrigerant branch includes a radiator. The first refrigerant main-line and the second refrigerant main-line selectively communicate with one of the first and second refrigerant branches. The battery coolant loop includes a coolant main-line, a first coolant branch connected to the cabin evaporator, a second coolant branch connected to the cabin condenser, and a third coolant branch. The coolant main-line selectively communicates with at least one of the first to third coolant branches. The battery coolant loop connects to the motor coolant loop in series or in parallel.

Abstract: A method of forming a vertical fin field effect device is provided. The method includes, forming a vertical fin on a substrate, forming a masking block on the vertical fin, wherein the masking block extends a distance outward from the vertical fin sidewalls and endwalls, and a portion of the substrate surrounding the masking block is exposed. The method further includes removing at least a portion of the exposed portion of the substrate to form a recess and a fin mesa below the vertical fin, removing a portion of the fin mesa to form an undercut recess below an overhanging portion of the masking block, forming a spacer layer on the masking block and in the undercut recess, and removing a portion of the spacer layer to form an undercut spacer in the undercut recess.

Abstract: Techniques perform storage management. In accordance with such techniques, in response to determining that there is an abnormal process in a process group of an application, and a first size of storage space occupied by the abnormal process exceeds a first threshold, an abnormal process is terminated. A second size of storage space occupied by other processes than the abnormal process in the process group after the abnormal process is terminated is determined. In response to the second size exceeding a second threshold, at least one process in the process group to reduce the second size is terminated, where the at least one process is different from the abnormal process.

Abstract: A method for identifying a trailer connection for a vehicle includes storing a plurality of connection configurations as saved configurations. The connection configurations identify a hitch compatibility of a coupler of a trailer to a hitch assembly. The method further comprises capturing image data depicting the hitch assembly and processing the image data. Based on the processing of the image data, the method further identifies a detected hitch configuration of the hitch assembly as a first hitch configuration of the saved configurations.

Abstract: Provided is a process executed by a robot, including: traversing, to a first position, a first distance in a backward direction; after traversing the first distance, rotating in a first rotation; after the first rotation, traversing, to a second position, a second distance in a third direction; after traversing the second distance, rotating 180 degrees in a second rotation such that the field of view of the sensor points in a fourth direction; after the second rotation, traversing, to a third position, a third distance in the fourth direction; after traversing the second distance, rotating 180 degrees in a third rotation such that the field of view of the sensor points in the third direction; and after the third rotation, traversing, to a fourth position, a fourth distance in the third direction.

Abstract: A method of forming a vertical fin field effect device is provided. The method includes, forming a vertical fin on a substrate, forming a masking block on the vertical fin, wherein the masking block extends a distance outward from the vertical fin sidewalls and endwalls, and a portion of the substrate surrounding the masking block is exposed. The method further includes removing at least a portion of the exposed portion of the substrate to form a recess and a fin mesa below the vertical fin, removing a portion of the fin mesa to form an undercut recess below an overhanging portion of the masking block, forming a spacer layer on the masking block and in the undercut recess, and removing a portion of the spacer layer to form an undercut spacer in the undercut recess.

Abstract: The present disclosure provides a non-contact neck-based respiratory and pulse signal detection method and apparatus, and an imaging device. The method includes: acquiring 3D morphological information of a neck of a human body in real-time; and acquiring a respiratory signal and an electrocardiogram signal of the human body on the basis of the 3D morphological information of the neck.

Abstract: A method for evaluating images of a printed pattern. The method includes obtaining a first averaged image of the printed pattern, where the first averaged image is generated by averaging raw images of the printed pattern. The method also includes identifying one or more features of the first averaged image. The method further includes evaluating the first averaged image, using an image quality classification model and based at least on the one or more features. The evaluating includes determining, by the image quality classification model, whether the first averaged image satisfies a metric.

Abstract: A semiconductor structure that includes a metal layer in a first interlayer dielectric that is above a semiconductor device. The semiconductor structure includes an embedded memory device on the metal layer. The embedded memory device has a first metal contact surrounded by a second interlayer dielectric. Additionally, the semiconductor structure includes a thin film transistor on the first metal contact. The thin film transistor is surrounded by a third interlayer dielectric. The third interlayer dielectric is over a portion of the embedded memory device and a portion of the second interlayer dielectric. The semiconductor structure includes a first portion of a channel of the thin film transistor covered a gate structure, where the channel is a layer of indium tin oxide.