Abstract: A method can include determining, by a head-mounted device, that a user is looking at a first electronic device; determining that the user made a predefined gesture; determining content that was presented by the first electronic device when the user made the predefined gesture; and instructing a second electronic to present the content that was presented by the first electronic device when the user made the predefined gesture.

Abstract: The application relates to a vanadium battery SOC balance system, which comprises a detection module, a control module, a load module and vanadium battery modules; the vanadium battery modules are connected in series; the detection module is used for detecting and outputting SOC values of the vanadium battery modules; the control module is connected with the detection module and used for receiving the SOC values and connecting the load module into one of the vanadium battery modules according to the SOC values. The detection module can detect the SOC values of the vanadium battery modules, the control module can insert a load into one of the vanadium battery modules according to the SOC values, the vanadium battery modules inserted into the load module can discharge through the load module, the SOC values of the vanadium battery modules are reduced, and the SOC values of the vanadium battery modules are balanced.

Abstract: A compound having a KHK inhibitory effect, or pharmaceutically acceptable salts thereof, and use thereof in the preparation of a medicament for treating a disease associated with KHK kinase abnormal expression. Provided is a compound as represented by formula (III) or a pharmaceutically acceptable salt thereof.

Abstract: The subject disclosure relates to high mobility complementary metal-oxide-semiconductor (CMOS) devices and techniques for forming the CMOS devices with fins formed directly on the insulator. According to an embodiment, a method for forming such a high mobility CMOS device can comprise forming, via a first epitaxial growth of a first material, first pillars within first trenches formed within a dielectric layer, wherein the dielectric layer is formed on a silicon substrate, and wherein the first pillars comprise first portions with defects and second portions without the defects. The method can further comprise forming second trenches within a first region of the dielectric layer, and further forming second pillars within the second trenches via a second epitaxial growth of one or more second materials using the second portions of the first pillars as seeds for the second epitaxial growth.

Abstract: Provided is a method for processing audio including: acquiring an accompaniment audio signal and a voice signal of a current to-be-processed musical composition; determining a target reverberation intensity parameter value of the acquired accompaniment audio signal, wherein the target reverberation intensity parameter value is configured to indicate a rhythm speed, an accompaniment type, and a performance score of a singer of the current to-be-processed musical composition; and reverberating the acquired vocal signal based on the target reverberation intensity parameter value.

Abstract: Disclosed are a diazaindole derivative as shown in formula I and the use thereof in the preparation of a drug for treating Chk1-related diseases.

Abstract: Techniques regarding anchors for fins comprised within stacked VTFET devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can further comprise a fin extending from a semiconductor body. The fin can be comprised within a stacked vertical transport field effect transistor device. The apparatus can also comprise a dielectric anchor extending from the semiconductor body and adjacent to the fin. Further, the dielectric anchor can be coupled to the fin.

Abstract: Disclosed is a nitrile derivative compound represented by formula (I), a stereoisomer, a deuterated product, a co-crystal, a solvate or a pharmaceutically acceptable salt thereof, wherein each group is as defined in the description. The compound has dipeptidyl peptidase 1 inhibitory activity and can be used to prepare a drug for treating diseases including obstructive airway diseases, bronchiectasis, cystic fibrosis, asthma, emphysema, and chronic obstructive pulmonary diseases.

Abstract: A robot configured to perceive a model of an environment, including: a chassis; a set of wheels; a plurality of sensors; a processor; and memory storing instructions that when executed by the processor effectuates operations including: capturing a plurality of data while the robot moves within the environment; perceiving the model of the environment based on at least a portion of the plurality of data, the model being a top view of the environment; storing the model of the environment in a memory accessible to the processor; and transmitting the model of the environment and a status of the robot to an application of a smartphone previously paired with the robot.

Abstract: Provided is an autonomous hospital bed including: a frame; wheels; motors to drive the wheels; a controller in communication with the motors; sensors; a processor; a tangible, non-transitory, machine readable medium storing instructions that when executed by the processor effectuate operations including: capturing, with the sensors, depth data indicating distances to objects within an environment of the hospital bed and directions of the distances; capturing, with the sensors, movement data indicating movement distance and direction of the hospital bed; generating, with the processor, a map of the environment using the depth and movement data; generating, with the processor, a movement path to a first location; instructing, with the processor, motor drivers of the wheels to move the hospital bed along the movement path; and, inferring, with the processor, a location of the hospital bed within the environment as the hospital bed navigates along the movement path.

Abstract: A semiconductor structure is provided. The semiconductor device includes a magnetic layer located between a first electrode and a second electrode formed on a substrate. The semiconductor device further includes a first write element electrically coupled to the magnetic layer adjacent to the first electrode. The semiconductor device also includes a second write element electrically coupled to the magnetic layer adjacent to the second electrode. The semiconductor device additionally includes a plurality of read elements electrically coupled to the magnetic layer located between the first write element and the second write element.

Abstract: A method and system for preventing battery thermal runaway are provided. The method includes: detecting or predicting whether there is a thermal runaway risk for each battery cell or battery module of a battery pack; and in response to detecting or predicting that there is a thermal runaway risk for at least one battery cell or battery module of the battery pack, transferring battery energy of the at least one battery cell or battery module to the battery pack or another battery pack as thermal energy or electric energy.

Abstract: The present invention discloses a 3D touch control-based automobile seat adjustment switch, including an insulating cover plate, a touch sensor, a base, a feedback module, a circuit board, and a module assembly cover plate. A plurality of protruding or recessed touch control regions are arranged on the insulating cover plate. A plurality of independent touch sensors are attached to the plurality of touch control regions on the insulating cover plate, to form a 3D touch assembly, and the plurality of touch sensors are all connected to the circuit board. The circuit board is assembled on the module assembly cover plate, the module assembly cover plate and the feedback module are assembled on one surface of the base, the feedback module is connected to the circuit board, and an other surface of the base is assembled on the insulating cover plate.

Abstract: An apparatus includes a fin, a gate, and a gate contact. A portion of the fin is disposed in a first layer. The gate is disposed in the first layer and adjacent to the fin. The gate contact is disposed on the gate and in a second layer, wherein the second layer is disposed on the first layer such that the gate contact is above the fin.

Abstract: An audio processing system and method which calculates, based on spatial metadata of the audio object, a panning coefficient for each of the audio objects in relation to each of a plurality of predefined channel coverage zones. Converts the audio signal into submixes in relation to the predefined channel coverage zones based on the calculated panning coefficients and the audio objects. Each of the submixes indicating a sum of components of the plurality of the audio objects in relation to one of the predefined channel coverage zones. Generating a submix gain by applying an audio processing to each of the submix and controls an object gain applied to each of the audio objects. The object gain being as a function of the panning coefficients for each of the audio objects and the submix gains in relation to each of the predefined channel coverage zones.

Abstract: A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n?1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n?3.

Abstract: A method of forming a vertical fin field effect transistor device is provided. The method includes forming a vertical fin and fin template on a bottom source/drain layer, wherein the fin template is on the vertical fin. The method further includes forming a gate structure on the vertical fin and fin template, and forming a top spacer layer on the gate structure. The method further includes removing the fin template to form an opening in the top spacer layer, and removing a portion of a gate electrode of the gate structure to form a cavity; and removing a portion of a gate dielectric layer of the gate structure to form a groove around the vertical fin.

Abstract: The invention discloses a catalyst for propane dehydrogenation to propylene and a preparation method and application thereof. The catalyst comprises a support, an active component and promoters supported on the carrier. Among them, the carrier is alumina ball, the active component is platinum group metal, the promoters include three kinds: rare earth elements (Y, La, Ce, Pr, Nd), tin, and alkali metal elements (Li, Na, K). When the catalyst is used for propane dehydrogenation to propylene, higher propane conversion and propylene selectivity are obtained.

Abstract: A workload of a database may be evaluated to provide a database migration recommendation. A request for a recommendation to migrate a database to a new host may be received. An evaluation of the workload of a client application of the database at a current host may be performed. The migration recommendation may be returned based on the evaluation of the workload of the client application of the database. In some embodiments, the migration recommendation may trigger an automated migration of the database to the new host.

Abstract: A binding segment identifier processing method and a device are provided. The method includes a network device receives a message sent by a controller, where the message includes type information and a segment identifier, and the type information indicates that the segment identifier is a binding segment identifier BSID. The network device performs a processing action on the BSID based on the type information. According to embodiments of this application, the network device can identify the BSID, to resolve a technical problem that an incorrect processing result is caused when a segment identifier list of the network device includes the BSID.