Abstract: A semiconductor device includes a FinFET fin. The same FinFET fin is associated with a bottom FinFET and a top FinFET. The FinFET fin includes a lower channel portion, associated with the bottom FinFET, a top channel portion, associated with the top FinFET, and a channel isolator between the bottom channel portion and the top channel portion. A lower gate includes a vertical portion that is upon a sidewall of the bottom channel portion. An isolation layer may be formed upon the lower gate if it is desired for the top FinFET fin and the bottom FinFET fin to not share a gate. An upper gate is upon the top channel portion and is further upon the isolation layer, if present, or is upon the lower gate.

Abstract: Systems and methods for vanadium battery state-of-charge balance are disclosed. An example system includes a state-of-charge detection module, a state detection module, a control module and a plurality of vanadium battery modules in series. Each vanadium battery module includes positive and negative electrode electrolyte tanks, and a balance pipeline with a controllable switch between the positive and negative electrode electrolyte tanks of any two vanadium battery modules. The state-of-charge detection module detects and outputs the state-of-charge value of each vanadium battery module. The state detection module detects and outputs the charge and discharge states of the vanadium battery modules.

Abstract: A channel fin extends vertically above a bottom source/drain region, a protective liner is positioned along opposite sidewalls of the bottom source/drain region. The bottom source/drain region is positioned above a semiconductor layer in contact with a first portion of an inner spacer. A first metal layer is positioned between the first portion of the inner spacer and a second portion of the inner spacer, the first portion of the inner spacer partially covers a top surface of the first metal layer and the second portion of the inner spacer substantially covers a bottom surface of the first metal layer for providing a buried power rail. A shallow trench isolation region is positioned above an exposed portion of the first metal layer, the shallow trench isolation region is adjacent to the first portion of the inner spacer, the semiconductor layer, and the bottom source/drain region.

Abstract: A method of forming a semiconductor structure includes forming a first array of mandrels on a hardmask layer disposed on an uppermost surface of a semiconductor substrate. First sidewall image transfer spacers are formed on opposing longitudinal sidewalls of each mandrel in the first array of mandrels. A second array of mandrels is formed on the hardmask layer. Each mandrel in the second array of mandrels is laterally separated from each mandrel in the first array of mandrels by the first sidewall image transfer spacers. Second sidewall image transfer spacers are formed on opposing transversal sidewalls of the first array of mandrels and the second array of mandrels. Portions of the second sidewall image transfer spacers are selectively removed to define a crosslink fin pattern to be transferred to the semiconductor substrate.

Abstract: Semiconductor devices and methods of forming the same include forming a first stack of nanosheets in a first region, the first stack of nanosheets including upper first nanosheets and lower first nanosheets. A second stack of nanosheets is formed in a second region, the second stack of nanosheets including upper second nanosheets and lower second nanosheets. A lower gate cut structure is formed between the lower first nanosheets and the lower second nanosheets. A gate stack is formed on the first and second stack of nanosheets after forming the lower gate cut structure. An upper gate cut structure is formed after forming the gate stack.

Abstract: Embodiments herein include semiconductor structures with an active channel stack having an upper field-effect transistor (FET) and a lower FET vertically stacked below the upper FET The semiconductor structure may also include a dummy stub adjacent to the active channel stack, a lower source/drain (S/D) connected to the active channel stack and laterally extended over the dummy stub, and an upper S/D connected to the active channel stack above the lower S/D.

Abstract: A FET channel comprises a stack of silicon nanosheets. The silicon nanosheets are oriented parallel to a planar portion of the FET in which the FET channel is formed. The FET channel also comprises a vertical blocker fin. The vertical blocker fin is attached to at least one nanosheet in the stack of nanosheets.

Abstract: The invention discloses a ratchet-driven self-propelled scooter, comprising a scooter body and a transmission mechanism set on the scooter body; the invention provides a manpower self-propelled scooter with simple structure, light weight and low cost; step on a driving pedal to put a driving clamp in motion, thereby a pressing arm wheel drives a ratchet arm, then a ratchet pawl leads an axle to drive the rear traveling wheels to rotate, so that the scooter body moves; after releasing the driving pedal, the driving pedal is reset through a torsion spring, likewise repeatedly stepping to increase the driving force for the scooter body; the device possesses a complete scheme, simple structure, convenient operation, low cost, which is worthy of widespread promotion.

Abstract: Embodiments of the present invention are directed to methods and resulting structures for nanosheet devices having defect free channels. In a non-limiting embodiment of the invention, a nanosheet stack is formed over a substrate. The nanosheet stack includes alternating first sacrificial layers and second sacrificial layers. One layer of the first sacrificial layers has a greater thickness than the remaining first sacrificial layers. The first sacrificial layers are removed and semiconductor layers are formed on surfaces of the second sacrificial layers. The semiconductor layers include a first set and a second set of semiconductor layers. The second sacrificial layers are removed and an isolation dielectric is formed between the first set and the second set of semiconductor layers.

Abstract: Stacked field effect transistors are provided such having a first power rail; a second power rail; a first Field Effect Transistor (FET) having a first gate connected to the first power rail; a second FET having a second gate connected to the second power rail; and an insulator separating the first FET from the second FET, wherein the first power rail, the second power rail, the first FET, and the second FET are aligned on a shared axis, and wherein the first power rail and the second power rail are located on opposite sides of the device.

Abstract: Monolithically stacked VTFET devices having source/drain contacts with increased contact area and dielectric isolation are provided. In one aspect, a stacked VTFET device includes: at least a bottom VTFET below a top VTFET, wherein the bottom VTFET and the top VTFET each includes source/drain regions interconnected by a vertical fin channel, and a gate stack alongside the vertical fin channel; and source/drain contacts to the source/drain regions, wherein at least one of the source/drain contacts is in direct contact with more than one surface of a given one of the source/drain regions. A stacked VTFET device having at least a bottom VTFET1 below a top VTFET1, and a bottom VTFET2 below a top VTFET2, and a method of forming a stacked VTFET device are also provided.

Abstract: A communication configuration apparatus for constructing a communication topology structure based on a plurality of processing nodes may be included in a combined processing apparatus. The combined processing apparatus further includes an interconnection interface and other processing apparatus. The communication configuration apparatus interacts with other processing apparatus to jointly complete a computing operation specified by a user. The combined processing apparatus further includes a storage apparatus. The storage apparatus is connected to the communication configuration apparatus and other processing apparatuses, respectively. The storage apparatus is used for storing data of the communication configuration apparatus and other processing apparatus. A technical solution of the present disclosure may improve efficiency of inter-chip communication.

Abstract: A semiconductor structure including a bottom source drain region arranged on a substrate, a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region, a metal gate disposed around the semiconductor channel region, a top source drain region above the semiconductor channel region, an amorphous silicon layer directly on top of the metal gate, and an oxidation layer directly on top of the amorphous silicon layer, where the amorphous silicon layer and the oxidation layer together completely separate the metal gate from a surrounding interlevel dielectric layer.

Abstract: A semiconductor device including a plurality of nanosheet transistor channels adjacent to a source/drain. An inner spacer located between each of the plurality of nanosheet transistor channels and the inner spacer wraps around the end of each of the plurality of nanosheet transistors. The source/drain is in contact with the inner spacer and each of the plurality of nanosheet transistor channels. A gate surrounding each of the plurality of nanosheet transistor channels and an electrical contact connected to the source/drain. An ultra low-k spacer located between the gate and the source/drain. The ultra low-k spacer reduces the parasitic capacitance of the nanosheet transistor.

Abstract: A compact SRAM design in a stacked architecture is provided. Notably, a 6-transistor SRAM bite cell including a bottom device level containing bottom field effect transistors and a top device level, stacked above the bottom device level, containing top field effect transistors of a different conductivity type than the bottom field effect transistors is provided.

Abstract: Provided is a tangible, non-transitory, machine readable medium storing instructions that when executed by a processor of a robot effectuates operations including: capturing, with at least one sensor, first data used in indicating a position of the robot; capturing, with at least one sensor, second data indicative of movement of the robot; recognizing, with the processor of the robot, a first area of the workspace based on at least one of: a first part of the first data and a first part of the second data; generating, with the processor of the robot, a first movement path covering at least part of the first recognized area; actuating, with the processor of the robot, the robot to move along the first movement path; and generating, with the processor of the robot, a map of the workspace based on at least one of: the first data and the second data.

Abstract: A robot configured to perceive a model of an environment, including: a chassis; a set of wheels; a plurality of sensors; a processor; and memory storing instructions that when executed by the processor effectuates operations including: capturing a plurality of data while the robot moves within the environment; perceiving the model of the environment based on at least a portion of the plurality of data, the model being a top view of the environment; storing the model of the environment in a memory accessible to the processor; and transmitting the model of the environment and a status of the robot to an application of a smartphone previously paired with the robot.

Abstract: A method is presented for forming a nanosheet device. The method includes forming nanosheets stacks over a substrate, the nanosheet stacks separated by shallow trench isolation (STI) regions, forming a first hardmask material over the nanosheet stacks, depositing a sacrificial gate, recessing the sacrificial gate such that recesses are defined adjacent the first hardmask material, wherein a top surface of the sacrificial gate is below a top surface of the first hardmask material, forming a second hardmask material in the recesses, defining a uniform gate length in both the first and second hardmask materials, and selectively trimming the first hardmask material such that a gate length over the nanosheet stacks is less than a gate length over the STI regions.

Abstract: A communication configuration apparatus for performing inter-node communication based on a plurality of processing nodes may be included in a combined processing apparatus. The combined processing apparatus further includes an interconnection interface and other processing apparatus. The communication configuration apparatus interacts with other processing apparatus to jointly complete a computing operation specified by a user. The combined processing apparatus further includes a storage apparatus. The storage apparatus is connected to the communication configuration apparatus and other processing apparatuses, respectively. The storage apparatus is used for storing data of the communication configuration apparatus and other processing apparatus. A technical solution of the present disclosure may improve efficiency of the inter-chip communication.

Abstract: A method of fabricating a complementary metal-oxide-semiconductor device is provided. The method includes forming a work function material layer segment on a gate dielectric layer over a first vertical fin and a bottom spacer layer on an n-type bottom source/drain adjoining the first vertical fin on a first region of a substrate, wherein the gate dielectric layer is also over a second vertical fin, bottom spacer layer on a p-type bottom source/drain adjoining the second vertical fin on a second region. The method further includes heat treating the work function material layer segment to produce a modified work function material layer segment on the first vertical fin with a shifted work function value, forming a second work function material layer on the modified work function material layer segment and the gate dielectric layer on the second vertical fin, and growing a top source/drain on each of the vertical fins.