Abstract: A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a first electrode upon a conductive contact of an underlying semiconductor device, forming a first vertical magnetoresistive random-access memory (MRAM) cell stack upon the first electrode, forming a spin-Hall-effect (SHE) layer above and in electrical contact with the MRAM cell stack, forming a protective dielectric layer covering a portion of the SHE layer, forming a second vertical MRAM cell stack above and in electrical contact with an exposed portion of the SHE layer, forming a second electrode above and in electrical contact with the second vertical MRAM cell stack, and forming a metal contact above and in electrical connection with the second electrode.

Abstract: Provided is a tangible, non-transitory, machine readable medium storing instructions that when executed by the processor effectuates operations including: capturing visual readings to objects within an environment; capturing readings of wheel rotation; capturing readings of a driving surface; capturing distances to obstacles; determining displacement of the robotic device in two dimensions based on sensor readings of the driving surface; estimating, with the processor, a corrected position of the robotic device to replace a last known position of the robotic device; determining a most feasible element in an ensemble based on the visual readings; and determining a most feasible position of the robotic device as the corrected position based on the most feasible element in the ensemble and the visual readings.

Abstract: A method of fabricating a complementary metal-oxide-semiconductor device is provided. The method includes forming a work function material layer segment on a gate dielectric layer over a first vertical fin and a bottom spacer layer on an n-type bottom source/drain adjoining the first vertical fin on a first region of a substrate, wherein the gate dielectric layer is also over a second vertical fin, bottom spacer layer on a p-type bottom source/drain adjoining the second vertical fin on a second region. The method further includes heat treating the work function material layer segment to produce a modified work function material layer segment on the first vertical fin with a shifted work function value, forming a second work function material layer on the modified work function material layer segment and the gate dielectric layer on the second vertical fin, and growing a top source/drain on each of the vertical fins.

Abstract: An intraluminal stent (1) and a preparation method therefor are provided. The intraluminal stent (1) includes at least one sub-stent. The sub-stent includes at least a first wire (4) extending along a first spiral direction and at least a second wire (5) extending along a second spiral direction, and the first wire (4) and the second wire (5) extend in different directions to form several wire intersection points. The intraluminal stent (1) has several wrapped portions (2) to wrap two corresponding wire tail ends. A wrapping connector (3) is disposed at a periphery of the wrapped portion (2). Two end portions of the wrapping connector (3) are firmly connected to regions corresponding to two ends of the wrapped portion (2). The two wire tail ends of the wrapped portions (2) are wrapped by using the wrapping connector (3). The stent (1) is less harmful to intraluminal tissues and a relatively strong tensile resistance.

Abstract: A solar cell is provided. The solar cell includes a p-n junction and a coating. The p-n junction includes upper and lower layers. The coating overlies the upper layer of the p-n junction. The coating includes a transparent conductive layer and a gate dielectric layer, which is interposed between the transparent conductive layer and the upper layer of the p-n junction. The solar cell further includes a front-contact and a back-contact, which are electrically communicative with each other. The front-contact is electrically communicative with the upper layer of the p-n junction through the coating. The back-contact is electrically communicative with the lower layer of the p-n junction. The solar cell can also include a contact via electrically communicative with the back-contact and with the transparent conductive layer.

Abstract: The present invention provides a wireless charging station, configured to charge a self-moving device. The wireless charging station includes a bottom plate and a wireless transmitting module fixed to the bottom plate, the wireless transmitting module is provided with at least one resonant coil transmitting component, the resonant coil transmitting component transmits an electromagnetic signal, and the self-moving device receives the electromagnetic signal after entering the bottom plate to perform a charging operation. The bottom plate of the wireless charging station in the present embodiments is laid flat on a ground, a case that the elderly and children in a lawn are easily tripped up by a convex-type charging station is avoided, and a structure of the wireless charging station can be simpler, thereby improving the aesthetics of the wireless charging station and the lawn.

Abstract: The present disclosure generally pertains to green oxidizer compositions and method of synthesizing and using the same. Such green oxidizers are stable, may be used in conventional bipropellant thrusters, including, but not limited to LDACS applications, and offer several benefits over conventional oxidizers with respect to toxicity and/or corrosion. The present disclosure also relates to methods of synthesizing poly-nitrated oxetane, a green oxidizer, in an Argon-rich environment.

Abstract: Disclosed is to a thiadiazole derivative and the uses thereof in preparing a drug for treating GLS1-associated diseases. Specifically disclosed is a derivative compound of formula (I), a tautomer thereof or a pharmaceutically acceptable composition thereof.

Abstract: Provided is a method for adding watermark information. The method includes: acquiring M first audio signal frames in a first audio signal; acquiring N watermark information items in watermark information; determining M*N adding parameters; acquiring M second audio signal frames added with the watermark information based on the M*N adding parameters; and determining a second audio signal based on the M second signal frames added with the watermark information.

Abstract: An electronic device such as a speaker device may have a curved housing characterized by a vertical longitudinal axis. A layer of fabric may cover the curved housing. A touch sensor may be used to detect touch input on the layer of fabric. The touch sensor may include capacitive touch sensor electrodes including drive lines and sense lines. In some arrangements, the touch sensor is formed from conductive strands in the layer of fabric. In other arrangements, the touch sensor is formed from conductive traces on a substrate. The substrate may be formed from portions of the curved housing or may be formed from a layer that is separate from the housing. Light-emitting components and/or fabric with different visual characteristics may be used to mark where the touch-sensitive regions of the fabric are located. The touch-sensitive regions may be shaped as media control symbols.

Abstract: An embodiment of the invention may include a semiconductor structure and method of manufacturing. The semiconductor structure may include a top channel and a bottom channel, wherein the top channel includes a plurality of vertically oriented channels. The bottom channel includes a plurality of horizontally oriented channels. The semiconductor structure may include a gate surrounding the top channel and the bottom channel. The semiconductor structure may include spacers located on each side of the gate. A first spacer includes a dielectric material located between the plurality of vertically oriented channels. A second spacer includes a dielectric material located between the plurality of horizontally oriented channels. This may enable spacer formation between the vertical spacers.

Abstract: The disclosure relates to the field of wire arc additive manufacturing, and specifically discloses a wire arc additive manufacturing method for a high-strength aluminum alloy component, equipment and a product. A high-strength aluminum alloy is modified by using a MXene nanomaterial, and wire arc additive manufacturing is performed by using the modified high-strength aluminum alloy as a raw material, and a nanosecond laser beam is applied during the wire arc additive manufacturing to achieve an enhanced arc cathode atomization cleanup function to remove impurities, thus obtaining a high-strength aluminum alloy component without defects. The disclosure can solve the problem of very difficult forming in wire arc additive manufacturing of a high-strength aluminum alloy, and also solve the problems of many pores, liability to crack and lots of impurities during additive manufacturing of the high-strength aluminum alloy, so that a high-strength aluminum alloy component without defects can be produced.

Abstract: A hand tool includes a first jaw, a first handle fixed to the first jaw, a second jaw, and a second handle pivotally coupled to the second jaw, a link member, and an adjustment member. The adjustment member is operable to axially move a first end of the link member to vary a distance between the first and second jaws. The adjustment member includes an engagement surface engageable with the first end of the link member, a shank in threaded engagement with a bore in the first handle, and a flange extending from the shank opposite the engagement portion. The flange includes a first side, a second side opposite the first side, and an elongate opening extending through the first and second sides.

Abstract: Provided is a method including: capturing, with at least one sensor of a robot, first data indicative of the position of the robot in relation to objects within the workspace and second data indicative of movement of the robot; recognizing, with a processor of the robot, a first area of the workspace based on observing at least one of: a first part of the first data and a first part of the second data; generating, with the processor of the robot, at least part of a map of the workspace based on at least one of: the first part of the first data and the first part of the second data; generating, with the processor of the robot, a first movement path covering at least part of the first recognized area; actuating, with the processor of the robot, the robot to move along the first movement path.

Abstract: Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a top spacer trench adjacent to an upper region of the channel fin. An oxygen-blocking layer is deposited within the top spacer trench and over the upper region of the channel fin. A top spacer is formed within the top spacer trench and over a portion of the oxygen-blocking layer that is within the top spacer trench. The oxygen-blocking layer includes an oxygen gettering material.

Abstract: The present disclosure relates to a method, a system, and a storage medium for segmenting a lung image. The method for segmenting a lung image comprises: obtaining medical image data containing a lung region; performing lung lobe segmentation on the medical image data to generate a plurality of lung lobe data subsets; generating updated lung image data based on one or a plurality of lung lobe data subsets in the plurality of lung lobe data subsets; and performing nidus segmentation on the updated lung image data to generate a segmentation image that identifies a pneumonia nidus.

Abstract: Provided in the present application are an image noise reduction method and device, an imaging system, and a non-transitory computer-readable storage medium. The image noise reduction method includes: processing, based on a first deep learning network, an original scanned object image to acquire a noise image corresponding to the original scanned object image; and acquiring a denoised image based on the original scanned object image and the noise image; wherein the first deep learning network is obtained by training based on low signal-to-noise ratio images and high signal-to-noise ratio images.

Abstract: Disclosed in the present disclosure are an image registration method and a model training method thereof. The image registration method comprises obtaining a reference image and a floating image to be registered, performing image preprocessing on the reference image and the floating image, performing non-rigid registration on the preprocessed reference image and floating image to obtain a registration result image, and outputting the registration result image. The image preprocessing comprises performing, on the reference image and the floating image, coarse-to-fine rigid registration based on iterative closest point registration and mutual information registration. The non-rigid registration uses a combination of a correlation coefficient and a mean squared error between the reference image and the registration result image as a loss function. Further disclosed in the present disclosure are an apparatus and a system for image registration and a computer-readable medium corresponding to the method.

Abstract: Provided is a tangible, non-transitory, machine readable medium storing instructions that when executed by a processor effectuates operations including: capturing, with at least one exteroceptive sensor, readings of an environment and capturing, with at least one proprioceptive sensor, readings indicative of displacement of a wheeled device; estimating, with the processor using an ensemble of simulated positions of possible new locations of the wheeled device, the readings of the environment, and the readings indicative of displacement, a corrected position of the wheeled device to replace a last known position of the wheeled device; determining, by the processor using the readings of the exteroceptive sensor, a most feasible position of the wheeled device as the corrected position; and, transmitting, by the processor, status information of tasks performed by the wheeled device to an external processor, wherein the status information initiates a second wheeled device to perform a second task.

Abstract: Metal-assisted chemical etching is employed to form a three-dimensional (3D) resistive random access memory (ReRAM) in which the etching aspect ratio limit is extended and the top trench and bottom trench CD uniformity is improved. The 3D ReRAM includes a metal catalyst located between a bitline electrode and a selector device. Further, the 3D ReRAM includes vertically stacked and spaced apart replacement wordline electrodes that are located adjacent to the bitline electrode.