Abstract: The disclosure relates to the field of wire arc additive manufacturing, and specifically discloses a wire arc additive manufacturing method for a high-strength aluminum alloy component, equipment and a product. A high-strength aluminum alloy is modified by using a MXene nanomaterial, and wire arc additive manufacturing is performed by using the modified high-strength aluminum alloy as a raw material, and a nanosecond laser beam is applied during the wire arc additive manufacturing to achieve an enhanced arc cathode atomization cleanup function to remove impurities, thus obtaining a high-strength aluminum alloy component without defects. The disclosure can solve the problem of very difficult forming in wire arc additive manufacturing of a high-strength aluminum alloy, and also solve the problems of many pores, liability to crack and lots of impurities during additive manufacturing of the high-strength aluminum alloy, so that a high-strength aluminum alloy component without defects can be produced.

Abstract: A hand tool includes a first jaw, a first handle fixed to the first jaw, a second jaw, and a second handle pivotally coupled to the second jaw, a link member, and an adjustment member. The adjustment member is operable to axially move a first end of the link member to vary a distance between the first and second jaws. The adjustment member includes an engagement surface engageable with the first end of the link member, a shank in threaded engagement with a bore in the first handle, and a flange extending from the shank opposite the engagement portion. The flange includes a first side, a second side opposite the first side, and an elongate opening extending through the first and second sides.

Abstract: Provided is a method including: capturing, with at least one sensor of a robot, first data indicative of the position of the robot in relation to objects within the workspace and second data indicative of movement of the robot; recognizing, with a processor of the robot, a first area of the workspace based on observing at least one of: a first part of the first data and a first part of the second data; generating, with the processor of the robot, at least part of a map of the workspace based on at least one of: the first part of the first data and the first part of the second data; generating, with the processor of the robot, a first movement path covering at least part of the first recognized area; actuating, with the processor of the robot, the robot to move along the first movement path.

Abstract: Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a top spacer trench adjacent to an upper region of the channel fin. An oxygen-blocking layer is deposited within the top spacer trench and over the upper region of the channel fin. A top spacer is formed within the top spacer trench and over a portion of the oxygen-blocking layer that is within the top spacer trench. The oxygen-blocking layer includes an oxygen gettering material.

Abstract: The present disclosure relates to a method, a system, and a storage medium for segmenting a lung image. The method for segmenting a lung image comprises: obtaining medical image data containing a lung region; performing lung lobe segmentation on the medical image data to generate a plurality of lung lobe data subsets; generating updated lung image data based on one or a plurality of lung lobe data subsets in the plurality of lung lobe data subsets; and performing nidus segmentation on the updated lung image data to generate a segmentation image that identifies a pneumonia nidus.

Abstract: Provided in the present application are an image noise reduction method and device, an imaging system, and a non-transitory computer-readable storage medium. The image noise reduction method includes: processing, based on a first deep learning network, an original scanned object image to acquire a noise image corresponding to the original scanned object image; and acquiring a denoised image based on the original scanned object image and the noise image; wherein the first deep learning network is obtained by training based on low signal-to-noise ratio images and high signal-to-noise ratio images.

Abstract: Disclosed in the present disclosure are an image registration method and a model training method thereof. The image registration method comprises obtaining a reference image and a floating image to be registered, performing image preprocessing on the reference image and the floating image, performing non-rigid registration on the preprocessed reference image and floating image to obtain a registration result image, and outputting the registration result image. The image preprocessing comprises performing, on the reference image and the floating image, coarse-to-fine rigid registration based on iterative closest point registration and mutual information registration. The non-rigid registration uses a combination of a correlation coefficient and a mean squared error between the reference image and the registration result image as a loss function. Further disclosed in the present disclosure are an apparatus and a system for image registration and a computer-readable medium corresponding to the method.

Abstract: Provided is a tangible, non-transitory, machine readable medium storing instructions that when executed by a processor effectuates operations including: capturing, with at least one exteroceptive sensor, readings of an environment and capturing, with at least one proprioceptive sensor, readings indicative of displacement of a wheeled device; estimating, with the processor using an ensemble of simulated positions of possible new locations of the wheeled device, the readings of the environment, and the readings indicative of displacement, a corrected position of the wheeled device to replace a last known position of the wheeled device; determining, by the processor using the readings of the exteroceptive sensor, a most feasible position of the wheeled device as the corrected position; and, transmitting, by the processor, status information of tasks performed by the wheeled device to an external processor, wherein the status information initiates a second wheeled device to perform a second task.

Abstract: Metal-assisted chemical etching is employed to form a three-dimensional (3D) resistive random access memory (ReRAM) in which the etching aspect ratio limit is extended and the top trench and bottom trench CD uniformity is improved. The 3D ReRAM includes a metal catalyst located between a bitline electrode and a selector device. Further, the 3D ReRAM includes vertically stacked and spaced apart replacement wordline electrodes that are located adjacent to the bitline electrode.

Abstract: Provided in the present disclosure are a voice processing method, an apparatus, an electronic device, and a storage medium, the method comprising: detecting the working state of a current call system, and when the working state is a two-end speaking state or a remote-end speaking state, performing compression processing on a subsequent remote-end voice signal, acquiring a near-end voice signal by means of a microphone, performing echo processing on the basis of the near-end voice signal and the compression-processed remote-end voice signal to obtain an echo-processed near-end voice signal and a remaining echo signal, performing non-linear suppression processing on the near-end voice signal and the remaining echo signal, and performing gain control on the suppression-processed near-end voice signal.

Abstract: A method is provided in one example embodiment and includes detecting by a first network element at a first data center site a local connection of an endpoint identifier (“EID”), in which the EID was previously locally connected to a second network element at a second data center site and notifying a mapping server of the local connection of the EID to the first network element. The method further includes receiving from the mapping server identifying information for the second network element and communicating with the second network element using the identifying information to obtain service information for traffic associated with the EID. The method may also include applying a service identified by the service information to outgoing traffic from the EID as well as applying a service identified by the service information to incoming traffic for the EID.

Abstract: The present application relates to a loudness adjustment method and apparatus, and an electronic device and a storage medium, mainly relating to the technical field of multimedia. The method comprises: converting a sound signal of a multimedia resource into a first frequency domain signal; acquiring a second frequency domain signal based on the first frequency domain signal and frequency response information of a current electronic device, wherein the second frequency domain signal is used for reflecting the loudness of the first frequency domain signal when same is played on the current electronic device; and adjusting the loudness of the sound signal based on the second frequency domain signal and a target loudness, so as to obtain a target sound signal of the multimedia resource.

Abstract: A magnetic random access memory (MRAM) array includes a plurality of MRAM cells, each of the MRAM cells including a magnetic tunnel junction (MTJ) stack disposed on a bottom metal via connecting the MTJ stack to a bottom conductive contact in a substrate, a plurality of top conductive contacts, each of the top conductive contacts disposed on a respective one of the MTJ stacks, and a plurality of unitary structures configured as a heat sink/magnetic shield disposed on a vertical portions of each of the MRAM cells, including vertical portions of the bottom metal vias, and under a portion of each of the MTJ stacks.

Abstract: A semiconductor structure, and a method for forming the same includes an amorphous semiconductor layer in contact with a top surface of a channel fin extending vertically from a bottom source/drain located above a substrate. A hard mask memorization layer is formed directly above the amorphous semiconductor layer, portions of the amorphous semiconductor layer in contact with the top surface of the channel fin are recrystallized forming recrystallized regions. The amorphous semiconductor layer is selective removed and a second dielectric layer is deposited to form a top spacer. The hard mask memorization layer and the recrystallized regions are removed, and a first epitaxial region is formed above the channel fin followed by a second epitaxial region positioned above the first epitaxial region and between the second dielectric layer forming a top source/drain of the semiconductor structure.

Abstract: A method of forming a semiconductor device and resulting structure in which a trench is formed extending through a plurality of layers on a semiconductor substrate. The plurality of layers includes a sequence of dielectric materials. A first portion of the plurality of layers corresponds to a bottom vertical field effect transistor (VFET) and a second portion of the plurality of layers corresponds to a top VFET. A sacrificial layer separates the bottom VFET from the top VFET. A fin is formed within the trench by epitaxially growing a semiconductor material. A hard mask is formed above a central portion of the plurality of layers. Portions of the plurality of layers not covered by the hard mask are removed. The first portion of the plurality of layers is covered to remove the sacrificial layer. The recess resulting from the removal of the sacrificial layer is filled with an oxide material.

Abstract: Techniques for forming VFET bottom source and drain epitaxy with anchors are provided. In one aspect, a method of forming a VFET device includes: patterning at least one fin in a substrate; forming anchors on opposite ends of the at least one fin; laterally etching a base of the at least one fin, wherein the anchors prevent the lateral etching from being performed on the ends of the at least one fin; forming bottom source and drains at the base of the at least one fin between the anchors; removing the anchors; forming bottom spacers on the bottom source and drains; forming gates above the bottom spacers alongside the at least one fin; forming top spacers above the gates; and forming top source and drains above the top spacers at a top of the at least one fin. VFET devices are also provided.

Abstract: An active front splitter for automobile is movably connected to a splitter support by a spindle support at each of its two ends. A driving mechanism being mounted to the splitter support at each of its two ends, an electric motor being mounted in the middle of the splitter support. The driving mechanism is driven by the electric motor and fixedly connected with the active front splitter so that the active front splitter is driven by the driving mechanism to rotate around a spindle fixed to the splitter support between a forwardly extended position and a retreated position. Thus, while ensuring the trafficability of the assembled automobile, it is possible to reduce wind drag so that the expected aerodynamic performance can be achieved.

Abstract: A method for forming a semiconductor structure is provided. The method including epitaxially growing a first source drain on the semiconductor structure between a first lower fin in a first region of the semiconductor structure and a second lower fin in a second region of the semiconductor structure, forming a first spacer layer on the first source drain, where a lower horizontal surface of the first spacer layer is coplanar with an upper horizontal surface of the first source drain, forming a lower gate stack surrounding the first lower fin and surrounding the second lower fin on exposed surfaces of the semiconductor structure, where a lower horizontal surface of the gate stack is coplanar with an upper horizontal surface of the first spacer layer, forming an interlayer dielectric on exposed surfaces of the first spacer layer.

Abstract: A method of forming a semiconductor structure is provided. Trenches are formed in a first dielectric layer having a first height on a substrate. First III-V semiconductor patterns including aluminum are formed in the trenches to a second height lower than the first height. Second III-V semiconductor patterns are formed on the first III-V semiconductor patterns to a third height not higher than the first height to form fins including the first and second III-V semiconductor patterns. The first dielectric layer is completely removed to expose the fins. Selective oxidation is performed to oxidize the first III-V semiconductor patterns to form oxidized first III-V semiconductor patterns. Fin patterning is performed. A second dielectric layer is formed to cover the fins. The second dielectric layer is recessed to a level not higher than top surfaces of the oxidized first III-V semiconductor patterns. The semiconductor structure is also provided.

Abstract: A method of forming a semiconductor structure includes forming a stacked vertical transport field-effect transistor (VTFET) structure including one or more vertical fins each including a first semiconductor layer providing a vertical transport channel for a lower VTFET, an isolation layer, and a second semiconductor layer providing a vertical transport channel for an upper VTFET. The method also includes forming at least one vertical via in the stacked VTFET structure spaced apart from the one or more vertical fins. The method further includes forming at least one horizontal via extending from the vertical via to at least one source/drain region of at least one of the upper and lower VTFETs. The method further includes forming a contact liner in the horizontal via, forming a barrier layer on sidewalls of the vertical via and the contact liner, and forming a contact material over the barrier layer in the vertical via.