Patents by Inventor Chen Zhang

Chen Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10734287
    Abstract: A method of fabricating a vertical fin field effect transistor with a merged top source/drain, including, forming a source/drain layer at the surface of a substrate, forming a plurality of vertical fins on the source/drain layer; forming protective spacers on each of the plurality of vertical fins, forming a sacrificial plug between two protective spacers, forming a filler layer on the protective spacers not in contact with the sacrificial plug, and selectively removing the sacrificial plug to form an isolation region trench between the two protective spacers.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: August 4, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Kangguo Cheng, Xin Miao, Wenyu Xu, Chen Zhang
  • Patent number: 10734502
    Abstract: Semiconductor devices include semiconductor layers and a gate stack formed on and around the semiconductor layers. Spacers are formed between vertically adjacent semiconductor layers, each spacer having a first spacer layer and a second spacer layer. The first spacer layer is positioned between the gate stack and the second spacer layer. The second spacer layer of each spacer has a trapezoidal cross-section.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: August 4, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tenko Yamashita, Chun W. Yeung, Chen Zhang
  • Patent number: 10724458
    Abstract: Systems and methods for operating a hybrid powertrain of a vehicle that includes an engine and a motor/generator are described. The systems and methods may judge whether or not to generate an engine start request when an engine is stopped in response to present vehicle operating conditions and predicted vehicle operating conditions.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: July 28, 2020
    Assignee: Ford Global Technologies, LLC
    Inventors: Yanan Zhao, Chen Zhang, Xiaoyong Wang
  • Patent number: 10727139
    Abstract: Techniques facilitating three-dimensional monolithic vertical field effect transistor logic gates are provided. A logic device can comprise a first vertical transport field effect transistor formed over and adjacent a substrate and a first bonding film deposited over the first vertical transport field effect transistor. The logic device can also comprise a second vertical transport field effect transistor comprising a second bonding film and stacked on the first vertical transport field effect transistor. The second bonding film can affix the second vertical transport field effect transistor to the first vertical transport field effect transistor. In addition, the logic device can comprise one or more monolithic inter-layer vias that extend from first respective portions of the second vertical transport field effect transistor to second respective portions of the first vertical transport field effect transistor and through the first bonding film and the second bonding film.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: July 28, 2020
    Assignee: ELPIS TECHNOLOGIES INC.
    Inventors: Terry Hook, Ardasheir Rahman, Joshua Rubin, Chen Zhang
  • Publication number: 20200235206
    Abstract: Embodiments of the invention are directed to a method of forming a nanosheet transistor. A non-limiting example of the method includes forming a nanosheet stack having alternating layers of channel nanosheets and sacrificial nanosheets, wherein each of the layers of channel nanosheets includes a first type of semiconductor material, and wherein each of the layers of sacrificial nanosheets includes a second type of semiconductor material. The layers of sacrificial nanosheets are removed from the nanosheet stack, and layers of replacement sacrificial nanosheets are formed in the spaces that were occupied by the sacrificial nanosheets. Each of the layers of replacement sacrificial nanosheets includes a first type of non-semiconductor material.
    Type: Application
    Filed: January 21, 2019
    Publication date: July 23, 2020
    Inventors: Wenyu Xu, Chen Zhang, Kangguo Cheng, Xin Miao
  • Publication number: 20200234711
    Abstract: A natural language processing (NLP) apparatus includes a housing, a built-in voice input interface; a built-in data communication interface configured to establish data communication with multiple types of appliances; a built-in NLP module, and a built-in control device. A first voice input is received through the built-in voice input interface; if the target appliance is a first appliance of a first appliance type, the first voice input is processed using a first NLP model of the built-in NLP module to obtain a first machine command, and the first machine command is sent via the built-in data communication interface to the first appliance; and if the target appliance is a second appliance of a second appliance type, the first voice input is processed using a second NLP model of the built-in NLP module, and the second machine command is sent via the built-in data communication interface to the second appliance.
    Type: Application
    Filed: April 9, 2020
    Publication date: July 23, 2020
    Inventors: Haibin HUANG, Chen ZHANG, Xin LIU
  • Publication number: 20200231167
    Abstract: A method in which the position of the center of gravity of a moving motor vehicle is ascertained, wherein at least one set of related input variables is taken into consideration, and the set of input variables includes at least a longitudinal acceleration of the motor vehicle, a lateral acceleration of the motor vehicle, a yaw rate of the motor vehicle and at least one wheel rotational speed, in particular four wheel rotational speeds, wherein the set of input variables is ascertained during a steady-state driving maneuver, and a quantity of possible center of gravity positions is defined as classes and, by a learning-based classification method, on the basis of the set of input variables, a class is selected which indicates an estimated center of gravity position. A control unit for carrying out the method is also disclosed.
    Type: Application
    Filed: September 19, 2018
    Publication date: July 23, 2020
    Inventors: Chen Zhang, Sebastian Bernhard, Andreas Kuntschar
  • Patent number: 10717041
    Abstract: The present disclosure describes a process for separating at least a first gas component and a second gas component by contacting a gas stream comprising the first and second gas components with a carbon molecular sieve (CMS) membrane under aggressive gas separation conditions in which the partial pressure of the selectively sorbed gas component in the gas stream is high. Despite the high partial pressure of the sorbed gas component, the selectivity of the carbon molecular sieve membrane is not substantially reduced by plasticization or saturation. In some embodiments, the aggressive gas separation process may include contacting a gas stream at supercritical conditions with a CMS membrane to separate at least first and second gas components. The process may be useful for, among other things, the separation of CO2 from a natural gas stream.
    Type: Grant
    Filed: February 6, 2018
    Date of Patent: July 21, 2020
    Assignees: SHELL OIL COMPANY, GEORGIA TECH RESEARCH CORPORATION
    Inventors: Chen Zhang, William John Koros, Joseph Marshall Mayne, Paul Jason Williams
  • Patent number: 10710979
    Abstract: The present invention provides an EGFR kinase inhibitor and a preparation method and use thereof. Specifically, the present invention provides a compound as shown in formula (I), the definition of each group therein being as described in the description. Said compound is an efficient EGFR inhibitor.
    Type: Grant
    Filed: July 11, 2016
    Date of Patent: July 14, 2020
    Assignee: ZHEJIANG BOSSAN PHARMACEUTICAL CO. LTD.
    Inventors: Dawei Ma, Qiang Yu, Junying Yuan, Hongguang Xia, Dongpo Cai, Kailiang Wang, Chen Zhang, Shanghua Xia
  • Publication number: 20200220219
    Abstract: The invention provides a composite separator and an electrochemical device such as a battery with the composite separator. The composite separator includes a membrane comprising at least one polymer and at least one metal organic framework (MOF) material defining a plurality of pore channels, where the at least one MOF material is activated at a temperature for a period of time. The at least one MOF material is a class of crystalline porous scaffolds constructed from metal clusters with organic ligands and comprises unsaturated metal centers, open metal sites and/or structural defects that are able to complex with anions in electrolyte. The membrane is formed by electrospinning of a mixture of the at least one MOF material with a polymer solution comprising the at least one polymer dissolved in at least one solvent, such that the membrane has a porous structure with tunable pore sizes and bead-threaded fibrous morphology.
    Type: Application
    Filed: March 18, 2020
    Publication date: July 9, 2020
    Inventors: Jimmy Wang, Li Shen, Chen Zhang
  • Patent number: 10703354
    Abstract: A system includes a computer including a processor and a memory, the memory storing instructions executable by the processor to plan a plurality of vehicle speeds for an upcoming road segment, adjust one or more of the planned speeds based on a predicted torque loss including a penalty based on a predicted torque impeller speed, and actuate a propulsion according to the planned speeds to lock a torque converter clutch.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: July 7, 2020
    Assignee: FORD GLOBAL TECHNOLOGIES, LLC
    Inventors: Chen Zhang, Yanan Zhao, Todd Mccullough
  • Publication number: 20200212036
    Abstract: A semiconductor structure includes a substrate, a vertical fin disposed over a top surface of the substrate, a first vertical transport field-effect transistor (VTFET) disposed over the top surface of the substrate surrounding a first portion of the vertical fin, an isolation layer disposed over the first VTFET surrounding a second portion of the vertical fin, and a second VTFET disposed over a top surface of the isolation layer surrounding a third portion of the vertical fin. The first portion of the vertical fin includes a first semiconductor layer with a first crystalline orientation providing a first vertical transport channel for the first VTFET, the second portion of the vertical fin includes an insulator, and the third portion of the vertical fin includes a second semiconductor layer with a second crystalline orientation providing a second vertical transport channel for the second VTFET.
    Type: Application
    Filed: January 2, 2019
    Publication date: July 2, 2020
    Inventors: Tenko Yamashita, Chen Zhang, Kangguo Cheng, Heng Wu
  • Patent number: 10696164
    Abstract: A vehicle includes a motor and a controller. The controller is programmed to, responsive to an autonomous braking request and a predicted average braking torque associated with the request having a magnitude less than a powertrain regenerative torque limit, brake the vehicle only with the motor according to a torque profile adapted from a most efficient torque profile of the motor so as to have an average value falling within a specified range of the average braking torque.
    Type: Grant
    Filed: May 18, 2017
    Date of Patent: June 30, 2020
    Assignee: Ford Global Technologies, LLC
    Inventors: Yanan Zhao, Ming Lang Kuang, Zheng Liu, Chen Zhang
  • Patent number: 10700195
    Abstract: Semiconductor devices and methods of forming the same include forming first charged spacers on sidewalls of a semiconductor fin. A gate stack on the fin is formed over the first charged spacers. Second charged spacers are formed on sidewalls of the fin above the gate stack. The fin is recessed to a height below a top level of the second charged spacers.
    Type: Grant
    Filed: February 14, 2019
    Date of Patent: June 30, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Peng Xu, Chun W. Yeung, Chen Zhang
  • Patent number: 10692768
    Abstract: A vertical transport field-effect transistor architecture is fabricated using a fin-last fabrication technique that enables pre-patterning of sacrificial gate layers and/or sacrificial source/drain layers with substantially flat topography prior to fin formation. Fins are epitaxially grown in trenches extending vertically through the device layers. Discrete regions of the sacrificial layers are later removed and replaced with appropriate source/drain and/or gate materials. Dielectric spacer elements are used to constrain feature dimensions of the replacement materials.
    Type: Grant
    Filed: February 26, 2019
    Date of Patent: June 23, 2020
    Assignee: International Business Machines Corporation
    Inventors: Joshua M. Rubin, Chen Zhang, Oleg Gluschenkov, Tenko Yamashita
  • Patent number: 10690757
    Abstract: A computer-implemented method for improving range finding system such as LIDAR, sonar, depth camera, and the like distance readings during instances when the range finding system is tilted. A range finding system continuously takes distance measurements to surfaces opposite the range finding system. As the range finding system is moved toward (or away from) stationary surfaces, a processor examines the successive measurements taken by the range finding system. If the measurements reflect a steady decline (or increase) in distances, readings will be accepted as normal and the system will continue to operate normally. If the measurements reflect a steady decline (or increase) in distances interrupted by measurements at least a predetermined amount or percentage greater than the measurements immediately before and after the interruption, the interrupting measurements are flagged and discarded.
    Type: Grant
    Filed: August 22, 2017
    Date of Patent: June 23, 2020
    Assignee: AI Incorporated
    Inventors: Ali Ebrahimi Afrouzi, Chen Zhang, Sebastian Christopher Daub Schweigert
  • Publication number: 20200192645
    Abstract: A server and method for converting a textual data prompt embedded within a graphical user interface (GUI) to a widget. Parameters of a textual data prompt, which was previously received from a first computing device, are compared to additional parameters associated with widget. A first match and a second match between the parameters and the additional parameters associated with a first widget and a second widget, respectively, of the widgets is identified. In response to determining that a percentage of the first match exceeds a confidence threshold and a percentage of the second match fails to exceed the confidence threshold, the first widget embedded within the GUI on a second computing device is generated. A first response to the textual data prompt by a user associated with the second computing device is received. The first response is displayed as textual data embedded within the GUI of the first computing device.
    Type: Application
    Filed: January 6, 2020
    Publication date: June 18, 2020
    Inventors: Chih-Hsiung Liu, Chen Zhang, Jian Gang JG Jin, Wei EY Li, Li Qiang MX Xue
  • Patent number: 10680082
    Abstract: Method and structure of forming a vertical FET. The method includes depositing a bottom source-drain layer over a substrate; depositing a first heterostructure layer over the bottom source-drain layer; depositing a channel layer over the first heterostructure layer; depositing a second heterostructure layer over the channel layer; forming a first fin having a hard mask; recessing the first and the second heterostructure layers to narrow them; filling gaps with an inner spacer; laterally trimming the channel layer to a narrower width; depositing a bottom outer spacer over the bottom source-drain layer; depositing a high-k layer on the bottom outer spacer, the first fin, and the hard mask; and depositing a metal gate layer over the high-k and top outer spacer to produce the vertical FET. Forming another structure by recessing the metal gate layer below the second inner spacer.
    Type: Grant
    Filed: May 14, 2019
    Date of Patent: June 9, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tenko Yamashita, Chen Zhang
  • Publication number: 20200176335
    Abstract: Various embodiments disclose a method for fabricating vertical transistors. In one embodiment, a structure is formed comprising at least a first substrate, an insulator layer on the substrate, a first doped layer on the insulator layer, at least one fin structure in contact with the doped layer, a dielectric layer surrounding a portion of the fin structure, a gate layer on the dielectric layer, a second doped layer in contact with the fin structure, a first contact area in contact with the second doped layer, and at least a first interconnect in contact with the first contact area. The structure is flipped bonded to a second substrate. The first substrate and the insulator layer are removed to expose the first doped layer. A second contact area is formed in contact with the first doped layer. At least a second interconnect is formed in contact with the second contact area.
    Type: Application
    Filed: February 4, 2020
    Publication date: June 4, 2020
    Inventors: Kangguo CHENG, Xin MIAO, Wenyu XU, Chen ZHANG
  • Publication number: 20200172573
    Abstract: The invention provides a peptide amide compound represented by the general general formula (I), a preparation method thereof, and a medical application thereof. The compound has a novel structure, better biological activity, and better analgesic effect.
    Type: Application
    Filed: July 19, 2018
    Publication date: June 4, 2020
    Applicant: Sichuan Haisco Pharmaceutical Co., Ltd.
    Inventors: Chen ZHANG, Anbang HUANG, Fei YE, Longbin HUANG, Zhenggang HUANG, Jianmin WANG, Yonggang WEI, Pangke YAN, Wei ZHENG