Abstract: The present approach relates to determining a reference value based on image data that includes a non-occluded vascular region (such as the ascending aorta in a cardiovascular context). This reference value is compared on a pixel-by pixel basis with the CT values observed in the other vasculature regions. With this in mind, and in a cardiovascular context, the determined FFR value for each pixel is the ratio of CT value in the vascular region of interest to the reference CT value.

Abstract: A method of forming a fin field effect transistor is provided. The method includes forming an elevated substrate tier on a substrate, and forming a fin mesa on the elevated substrate tier with a fin template layer on the fin mesa, wherein the elevated substrate tier is laterally larger than the fin mesa and fin template layer. The method includes forming a fill layer on the substrate, wherein the fill layer surrounds the fin mesa, elevated substrate tier, and fin template layer, forming a plurality of fin masks on the fill layer and fin template layer, and removing portions of the fill layer, fin template layer, and fin mesa to form a plurality of dummy fins from the fill layer, one or more vertical fins from the fin mesa, and a dummy fin portion on opposite ends of each of the one or more vertical fins from the fill layer.

Abstract: A method of forming fin field effect devices is provided. The method includes forming a plurality of vertical fins on a substrate. The method further includes forming a dielectric pillar on the substrate between two adjacent vertical fins, wherein at least one of the vertical fins is on a first region of the substrate, and at least one of the vertical fins is on a second region of the substrate. The method further includes growing a bottom source/drain layer on the first region of the substrate and the second region of the substrate. The method further includes depositing a bottom spacer layer on the bottom source/drain layer, and a filler layer on the bottom spacer layer. The method further includes forming a cover block on the first region of the substrate, and removing the portion of the filler layer on the second region of the substrate.

Abstract: A technique relates to a semiconductor device. A first vertical fin is formed with a first gate stack and a second vertical fin with a second gate stack. The second vertical fin has a hardmask on top. The first vertical fin is adjacent to a first bottom source or drain (S/D) region and the second vertical fin is adjacent to a second bottom S/D region. The first gate stack is reduced to a first gate length and the second gate stack to a second gate length, the second gate length being greater than the first gate length because of the hardmask. The hardmask is removed. A first top S/D region is adjacent to the first vertical fin and a second top S/D region is adjacent to the second vertical fin.

Abstract: The present invention provides PCM devices with gradual SET and RESET characteristics. In one aspect, a method of forming a PCM computing device includes: forming word lines and an insulating hardmask cap on a substrate; forming a PCM material over the word lines, having a tapered thickness; and forming bit lines over the PCM material, the insulating hardmask cap, and the word lines, wherein the tapered thickness of the PCM material varies gradually between the word lines and the bit lines. The tapered thickness can be formed by depositing a non-conformal layer of the PCM material or by depositing a conformal layer and then tapering the PCM material using a directional etch. A PCM device is also provided.

Abstract: A tangible, non-transitory, machine readable medium storing instructions that when executed by an image processor effectuates operations including: causing the camera to capture one or more images of an environment of the robotic device; receiving, with the image processor, one or more multidimensional arrays including at least one parameter that describes a feature included in the one or more images, wherein values of the at least one parameter correspond with pixels of a corresponding one or more images of the feature; determining, with the image processor, an amount of asymmetry of the feature in the one or more images based on at least a portion of the values of the at least one parameter; and, transmitting, with the image processor, a signal to the processor of the controller to adjust a heading of the robotic device by an amount proportional to the amount of asymmetry of the feature.

Abstract: Semiconductor devices and methods are provided to fabricate FET devices. For example, a semiconductor device can include a functional gate structure on a channel region of a fin structure; and a source/drain region on each side of the functional gate structure. The functional gate structure has an insulator material abutting a portion of the sidewalls of the functional gate structure and the source drain region and the top surface of the fin. The functional gate structure further includes a dielectric top layer. The dielectric top layer seals an air gap between the top surface of the insulator material and the dielectric top layer.

Abstract: The present disclosure provides a return gas prevention device for a drainage pipe, belonging to the technical field of drainage pipes. The device realizes two functions of water seal and a check valve simultaneously, as well as prevents gas channeling in a drainage process.

Abstract: A method of fabricating a vertically stacked nanosheet semiconductor device includes epitaxially growing at least three layers each of alternating silicon and silicon germanium layers on a substrate and patterning a gate structure. The method includes performing at least three reactive ion etch processes forming recesses. The method includes forming source or drain regions in a channel formed by a shallow trench isolation layer formed in the recesses. The method includes growing a first epitaxial layer on the source or drain regions, forming at least three pFET structures. The method includes etching away a portion of each of the pFET structures and depositing a dielectric layer on each. The method includes growing a second epitaxial layer, forming at least three nFET structures. Each layer of the pFET structure and nFET structure are stacked vertically and each layer of the pFET structure and nFET structures have independent source or drain contacts.

Abstract: The present disclosure discloses a control system for enhancing a frequency support capability of a wind turbine generator system. The control system includes a wind turbine, a gearbox, an electric generator and a converter. The control system is characterized by further including a supercapacitor energy storage apparatus, which includes a DC-DC converter and a supercapacitor. The converter includes DC buses, and the supercapacitor is electrically connected to the DC buses via the DC-DC converter. The supercapacitor may be orderly charged or discharged according to an operating state of the wind turbine generator system to maintain its operating condition, and has a superior reliability.

Abstract: An interaction method is provided for a mobile terminal. The method includes performing real-time image acquisition on a target face by using a camera configured on the mobile terminal, to obtain a first frame of image and a second frame of image, the first frame of image and the second frame of image being two successive frames of images that are separately captured; comparing the first frame of image with the second frame of image, to obtain an action of the target face and a corresponding amplitude; generating a control instruction of a simulated object in an interactive application scene according to the action of the target face and the corresponding amplitude, the simulated object and an interactive item being displayed in the interactive application scene; and controlling, according to the control instruction, the simulated object to interact with the interactive item in the interactive application scene.

Abstract: A method for efficient navigational and work duty planning for mobile robotic devices. A mobile robotic device will autonomously create a plan for navigation and work duty functions based on data compiled regarding various considerations in the work environment. These factors include what type of work surface is being operated on, whether dynamic obstacles are present in the work environment or not and the like factors.

Abstract: Transistors and methods of forming the same include forming a fin that has an active layer between two sacrificial layers. Material is etched away from the two sacrificial layers in a region of the fin. A gate stack is formed around the active layer in the region. The active layer is etched after forming the gate stack to form a quantum dot.

Abstract: A method of forming a vertical fin field effect transistor with a self-aligned gate structure, comprising forming a plurality of vertical fins on a substrate, forming gate dielectric layers on opposite sidewalls of each vertical fin, forming a gate fill layer between the vertical fins, forming a fin-cut mask layer on the gate fill layer, forming one or more fin-cut mask trench(es) in the fin-cut mask layer, and removing portions of the gate fill layer and vertical fins not covered by the fin-cut mask layer to form one or more fin trench(es), and two or more vertical fin segments from each of the plurality of vertical fins, having a separation distance, D1, between two vertical fin segments.

Abstract: A method for forming a semiconductor structure is provided. The method including epitaxially growing a first source drain on the semiconductor structure between a first lower fin in a first region of the semiconductor structure and a second lower fin in a second region of the semiconductor structure, forming a first spacer layer on the first source drain, where a lower horizontal surface of the first spacer layer is coplanar with an upper horizontal surface of the first source drain, forming a lower gate stack surrounding the first lower fin and surrounding the second lower fin on exposed surfaces of the semiconductor structure, where a lower horizontal surface of the gate stack is coplanar with an upper horizontal surface of the first spacer layer, forming an interlayer dielectric on exposed surfaces of the first spacer layer.

Abstract: The present invention provides PCM devices with gradual SET and RESET characteristics. In one aspect, a method of forming a PCM computing device includes: forming word lines and an insulating hardmask cap on a substrate; forming a PCM material over the word lines, having a tapered thickness; and forming bit lines over the PCM material, the insulating hardmask cap, and the word lines, wherein the tapered thickness of the PCM material varies gradually between the word lines and the bit lines. The tapered thickness can be formed by depositing a non-conformal layer of the PCM material or by depositing a conformal layer and then tapering the PCM material using a directional etch. A PCM device is also provided.

Abstract: This application provides a Wi-Fi configuration method, a Wi-Fi mobile terminal, and a Wi-Fi device. The Wi-Fi mobile terminal constructs an information string according to obtained Wi-Fi networking parameters, adds information of the information string to a plurality of multicast packets, and sends the plurality of multicast packets to the Wi-Fi device. The Wi-Fi device parses the plurality of received multicast packets according to a method for carrying the information string by the multicast packets, decapsulates the information string according to a method for constructing the information string, to obtain the Wi-Fi networking parameters, and further sends a connection request to a wireless router according to the obtained Wi-Fi networking parameters, to establish a connection to the wireless router. An AP to which the Wi-Fi mobile terminal is connected does not need to be switched, so that initial networking configuration of the Wi-Fi device can be quickly completed.

Abstract: A vehicle hitch assistance system includes a steering system and a controller. The controller acquires position data for a coupler of a trailer, derives a vehicle path to position a center of a hitch ball of the vehicle at an interference offset past a centerline of the coupler in a driving direction of the vehicle path, and outputs a steering control signal to the steering system to maintain the vehicle along the path.

Abstract: An embodiment of the invention may include a method of forming a semiconductor structure, and the resulting semiconductor structure. The method may include removing a gate region from a layered stack located on a source/drain layer. The layered stack includes a first spacer located on the source drain layer, a dummy layer located on the first spacer, and a second spacer located on the dummy layer. The method may include forming a channel material above the source/drain layer in the gate region. The method may include forming a top source/drain on the channel material. The method may include forming a hardmask surrounding the top source/drain. The method may include removing a portion of the layered stack that is not beneath the hardmask.