Abstract: An interference-type torque split differential includes a differential housing, a first differential gear and an interference-type torque split module. The first differential gear is provided in the differential housing. The interference-type torque split module is provided outside the differential housing and has a second differential gear, a first brake source and a second brake source. The second differential gear is connected with the first differential gear. The first brake source and the second brake source are at two sides of the second differential gear, respectively. The first brake source or the second brake source provides multiple stages of clamping force for performing torque split.

Abstract: In some embodiments, the present disclosure, in some embodiments, relates to a method of forming a CMP membrane. The method is performed by providing a malleable material within a cavity within a membrane mold. The cavity has a central region and a peripheral region surrounding the central region. The malleable material within the cavity is cured to form a membrane. Curing the malleable material is performed by heating the malleable material within the central region of the membrane mold to a first temperature and heating the malleable material within the peripheral region of the membrane mold to a second temperature that is greater than the first temperature.

Abstract: A touch panel includes a substrate, a touch sensing electrode, a peripheral conductive trace, a protective layer, and a conductive layer. The substrate has a display area and a peripheral area. The touch sensing electrode is disposed in the display area. The peripheral conductive trace is disposed in the peripheral area. The touch sensing electrode is electrically connected to the peripheral conductive trace. The touch sensing electrode and the peripheral conductive trace at least include metal nanowires. The protective layer is disposed on the touch sensing electrode, and the conductive layer is disposed on the peripheral conductive trace.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a chitosan; a dicarboxylic acid, wherein the dicarboxylic acid is selected from the group consisting of propanedioic acid and 2-hydroxypropanedioic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) and some of the titanium (Ti) is polished away from the substrate with a removal selectivity for the tungsten (W) relative to the titanium (Ti).

Abstract: A process for chemical mechanical polishing a substrate containing titanium nitride and titanium is provided comprising: providing a polishing composition, containing, as initial components: water; an oxidizing agent; a linear polyalkylenimine polymer; a colloidal silica abrasive with a positive surface charge; a carboxylic acid; a source of ferric ions; and, optionally pH adjusting agent; wherein the polishing composition has a pH of 1 to 4; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein at least some of the titanium nitride and at least some of the titanium is polished away with a selectivity between titanium nitride and titanium.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming an interlayer dielectric (ILD) layer around the gate structure; removing the gate structure to form a first recess; forming ferroelectric (FE) layer in the first recess; forming a compressive layer on the FE layer; performing a thermal treatment process; removing the compressive layer; and forming a work function metal layer in the recess.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a polyglycol or polyglycol derivative; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A transmission mechanism includes first and second transmission, first and second shafts, a clutch, and a one-way bearing. In the first gear, power is output through the first driving transmission and the one-way bearing; and in the second gear, the power is output through the clutch, the second driving transmission and the one-way bearing.

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package layer. The package structure also includes an integrated circuit die and a first connector embedded in the package layer. The package structure further includes a redistribution layer over the package layer. The integrated circuit die is electrically connected to the redistribution layer through the first connector. In addition, the package structure includes a passivation layer over the redistribution layer. The package structure also includes a second connector over the passivation layer. A first portion of the redistribution layer and a second portion of the second connector extend into the passivation layer. The second portion of the second connector has a tapered profile along a direction from the integrated circuit die towards the first connector.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a polyglycol or polyglycol derivative; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: Package structures and methods for forming the same are provided. A method for forming a package structure includes providing a carrier substrate. The method also includes forming a conductive layer over the carrier substrate. The method further includes forming a passivation layer over the conductive layer. The passivation layer includes openings that expose portions of the conductive layer. In addition, the method includes bonding integrated circuit dies to the portions of the conductive layer through bumps. There is a space between the integrated circuit dies and the passivation layer. The method also includes filling the space with a first molding compound. The first molding compound surrounds the bumps and the integrated circuit dies. The method further includes forming a second molding compound capping the first molding compound and the integrated circuit dies. The passivation layer has a sidewall that is covered by the second molding compound.

Abstract: A voice control device includes a microphone module, a voice encoding module, a display and a processing unit. The voice encoding module is electrically connected to the microphone module. The processing unit is electrically connected to the voice encoding module and the display. The microphone module receives a voice signal and transmits the received voice signal to the voice encoding module. One of the voice encoding module and the processing unit analyzes and processes the voice signal to determine a sound source direction of the voice signal and obtains response information according to the voice signal. The processing unit controls the display to rotate to the sound source direction and transmits the response information to the display for displaying the response information.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: Package structures and methods for forming the same are provided. A method for forming a package structure includes providing a carrier substrate. The method also includes forming a conductive layer over the carrier substrate. The method further includes forming a passivation layer over the conductive layer. The passivation layer includes openings that expose portions of the conductive layer. In addition, the method includes bonding integrated circuit dies to the portions of the conductive layer through bumps. There is a space between the integrated circuit dies and the passivation layer. The method also includes filling the space with a first molding compound. The first molding compound surrounds the bumps and the integrated circuit dies. The method further includes forming a second molding compound capping the first molding compound and the integrated circuit dies. The passivation layer has a sidewall that is covered by the second molding compound.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: An active torque dispensing apparatus and method for using the same is disclosed. The active torque dispensing apparatus includes a differential and a first actuating unit furnished thereat wherein the two ends of the differential outputs a first torque and a second torque, and the actuating unit is used for adjusting the first torque or the second torque.

Abstract: An electronic device with a Frequency Modulation (FM) antenna includes an earphone jack, an FM chip, a switching unit, and a processing unit. The earphone jack includes a left channel pin, a right channel pin, and a ground pin. The FM chip receives an FM signal and outputs a Receive Signal Strength Indicator (RSSI) value of the FM signal to the processing unit. The processing unit receives the RSSI value, compares the RSSI value with a predetermined value, and controls the switching unit to select the left and right channel pins as a signal receiving point of the FM antenna or select the ground pin as the signal receiving point of the FM antenna according to a result of the comparison.