Abstract: A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

Abstract: A parking mechanism used in gearbox, including a ratchet pawl and a cam set for driving the ratchet pawl. The cam set includes a shaft, a first and a second cam pivotally engaged with the shaft, wherein the shaft drives the first cam and the second cam to rotate, so as to drive the ratchet pawl to engage with a gear wheel that is pivotally engaged with a shaft member and to stop the shaft member. The cam set as a driving means simplifies the parking mechanism and is easy to be manufactured and disassembled.

Abstract: A process for chemical mechanical polishing a substrate containing titanium nitride and titanium is provided comprising: providing a polishing composition, containing, as initial components: water; an oxidizing agent; a linear polyalkylenimine polymer; a colloidal silica abrasive with a positive surface charge; a carboxylic acid; a source of ferric ions; and, optionally pH adjusting agent; wherein the polishing composition has a pH of 1 to 4; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein at least some of the titanium nitride and at least some of the titanium is polished away with a selectivity between titanium nitride and titanium.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten and titanium is provided comprising: providing the substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; an allylamine additive; a carboxylic acid; a source of iron ions; a colloidal silica abrasive with a positive surface charge; and, optionally pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein the tungsten (W) is selectively polished away from the substrate relative to the titanium (Ti).

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: Package structures and methods for forming the same are provided. A package structure includes a package layer. The package structure also includes an integrated circuit die and a first connector embedded in the package layer. The package structure further includes a redistribution layer over the package layer. The integrated circuit die is electrically connected to the redistribution layer through the first connector. In addition, the package structure includes a passivation layer over the redistribution layer. The package structure also includes a second connector over the passivation layer. A first portion of the redistribution layer and a second portion of the second connector extend into the passivation layer. The second portion of the second connector has a tapered profile along a direction from the integrated circuit die towards the first connector.

Abstract: A voice control device includes a microphone module, a voice encoding module, a display and a processing unit. The voice encoding module is electrically connected to the microphone module. The processing unit is electrically connected to the voice encoding module and the display. The microphone module receives a voice signal and transmits the received voice signal to the voice encoding module. One of the voice encoding module and the processing unit analyzes and processes the voice signal to determine a sound source direction of the voice signal and obtains response information according to the voice signal. The processing unit controls the display to rotate to the sound source direction and transmits the response information to the display for displaying the response information.

Abstract: A dual-shaft gearbox mechanism includes a hollow shaft motor, first and second gear sets, first and second shafts, a clutch and a unidirectional assembly. When the dual-shaft gearbox mechanism is in a first gear, power is outputted via the first gear set and the unidirectional assembly. When the dual-shaft gearbox mechanism is in a second gear, power is outputted via the clutch and the second gear set.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alginate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A process for chemical mechanical polishing a substrate containing tungsten to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics is disclosed. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; xanthan gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; optionally a surfactant; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A white light emitting device includes a blue LED chip having a dominant emission wavelength of about 440-465 nm, and a phosphor layer configured to be excited by the dominant emission wavelength of the blue LED chip. The phosphor layer includes a first phosphor having a peak emission wavelength of about 480-519 nm, a second phosphor having a peak emission wavelength of about 520-560 nm, and a third phosphor having a peak emission wavelength of about 620-670 nm. The first phosphor and the second phosphor both have a garnet structure as represented by A3B5O12:Ce, A is selected from the group consisting of Y, Lu, and a combination of thereof, and B is selected from the group consisting of Al, Ga, and a combination of thereof.

Abstract: An interference-type torque split differential includes a differential housing, a first differential gear and an interference-type torque split module. The first differential gear is provided in the differential housing. The interference-type torque split module is provided outside the differential housing and has a second differential gear, a first brake source and a second brake source. The second differential gear is connected with the first differential gear. The first brake source and the second brake source are at two sides of the second differential gear, respectively. The first brake source or the second brake source provides multiple stages of clamping force for performing torque split.

Abstract: A method for fabrication a nanosheet device includes providing forming a stacked layer on a substrate, having first material layers and second material layers in different materials, alternatingly stacked up. The stacked layer is patterned to a stacked fin. A dummy stack is formed on the stacked fin. An etching back process is performed with the dummy stack with spacers to etch the stacked fin and expose the substrate. Laterally etches the first material layers and the second material layers, to have indent portions. Inner spacers fill the indent portions. A first/second source/drain layer is formed on the substrate at both sides of the dummy stack. Etching process is performed to remove the dummy gate of the dummy stack and the selected one of the first material layers and the second material layers between the inner spacers. Metal layer fills between the spacers and the inner spacers.

Abstract: A dual-shaft push-moving varying speed device includes a drive unit; an input shaft, having at least an odd-numbered input gear and at least an even-numbered input gear is coupled with the drive unit; an output shaft, having an end thereof penetrate through the input shaft and the drive unit, and the another end thereof possesses an output gear; a transmission shaft, including at least an odd-numbered output gear, at least an even-numbered output gear, and a transmission gear where the odd-numbered output gear is meshed with the corresponding odd-numbered input gear while the even-numbered output gear is meshed with the corresponding even-numbered input gear, and the transmission gear is meshed with the output gear; and at least a push-moving fork, being furnished between the odd-numbered input gear and the even-numbered input gear, selectively pushes the odd-numbered input gear and the even-numbered input gear to move.

Abstract: A white light source device includes a first light-emitting element, and at least one second light-emitting element. The first light-emitting element includes a first light-emitting unit and a first wavelength conversion unit, and emits a first light beam. Each of the second light-emitting elements includes a second light-emitting unit and a second wavelength conversion unit, and emits a second light beam. An emission spectrum of the second light beam is different from an emission spectrum of the first light beam. The first light beam and the second light beam are mixed into a white light beam, and a color fidelity index of the white light beam is greater than 90.

Abstract: A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a thiolalkoxy compound; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

Abstract: A semiconductor device includes a metal gate on a substrate, a polysilicon layer on the metal gate, a hard mask on the polysilicon layer, and a source/drain region adjacent to two sides of the metal gate. Preferably, the metal gate includes a ferroelectric (FE) layer on the substrate, a work function metal layer on the FE layer, and a low resistance metal layer on the work function metal layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A dual-shaft push-moving varying speed device includes a drive unit; an input shaft, having at least an odd-numbered input gear and at least an even-numbered input gear is coupled with the drive unit; an output shaft, having an end thereof penetrate through the input shaft and the drive unit, and the another end thereof possesses an output gear; a transmission shaft, including at least an odd-numbered output gear, at least an even-numbered output gear, and a transmission gear where the odd-numbered output gear is meshed with the corresponding odd-numbered input gear while the even-numbered output gear is meshed with the corresponding even-numbered input gear, and the transmission gear is meshed with the output gear; and at least a push-moving fork, being furnished between the odd-numbered input gear and the even-numbered input gear, selectively pushes the odd-numbered input gear and the even-numbered input gear to move.

Abstract: An interference-type torque split differential includes a differential housing, a first differential gear and an interference-type torque split module. The first differential gear is provided in the differential housing. The interference-type torque split module is provided outside the differential housing and has a second differential gear, a first brake source and a second brake source. The second differential gear is connected with the first differential gear. The first brake source and the second brake source are at two sides of the second differential gear, respectively. The first brake source or the second brake source provides multiple stages of clamping force for performing torque split.